JP4612849B2 - 露光方法、露光装置及びデバイス製造方法 - Google Patents

露光方法、露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4612849B2
JP4612849B2 JP2005056007A JP2005056007A JP4612849B2 JP 4612849 B2 JP4612849 B2 JP 4612849B2 JP 2005056007 A JP2005056007 A JP 2005056007A JP 2005056007 A JP2005056007 A JP 2005056007A JP 4612849 B2 JP4612849 B2 JP 4612849B2
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JP
Japan
Prior art keywords
mask
contact hole
light
pattern
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005056007A
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English (en)
Japanese (ja)
Other versions
JP2006245115A5 (enExample
JP2006245115A (ja
Inventor
賢治 山添
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2005056007A priority Critical patent/JP4612849B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to DE602006007889T priority patent/DE602006007889D1/de
Priority to KR1020060019035A priority patent/KR100752492B1/ko
Priority to US11/363,038 priority patent/US7359033B2/en
Priority to EP06110470A priority patent/EP1698940B1/en
Priority to TW095106821A priority patent/TWI307115B/zh
Publication of JP2006245115A publication Critical patent/JP2006245115A/ja
Publication of JP2006245115A5 publication Critical patent/JP2006245115A5/ja
Application granted granted Critical
Publication of JP4612849B2 publication Critical patent/JP4612849B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005056007A 2005-03-01 2005-03-01 露光方法、露光装置及びデバイス製造方法 Expired - Fee Related JP4612849B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005056007A JP4612849B2 (ja) 2005-03-01 2005-03-01 露光方法、露光装置及びデバイス製造方法
KR1020060019035A KR100752492B1 (ko) 2005-03-01 2006-02-28 노광방법 및 장치
US11/363,038 US7359033B2 (en) 2005-03-01 2006-02-28 Exposure method and apparatus
EP06110470A EP1698940B1 (en) 2005-03-01 2006-02-28 Exposure method and apparatus
DE602006007889T DE602006007889D1 (de) 2005-03-01 2006-02-28 Belichtungsverfahren und -vorrichtung
TW095106821A TWI307115B (en) 2005-03-01 2006-03-01 Exposure method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005056007A JP4612849B2 (ja) 2005-03-01 2005-03-01 露光方法、露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2006245115A JP2006245115A (ja) 2006-09-14
JP2006245115A5 JP2006245115A5 (enExample) 2008-04-17
JP4612849B2 true JP4612849B2 (ja) 2011-01-12

Family

ID=36589082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005056007A Expired - Fee Related JP4612849B2 (ja) 2005-03-01 2005-03-01 露光方法、露光装置及びデバイス製造方法

Country Status (6)

Country Link
US (1) US7359033B2 (enExample)
EP (1) EP1698940B1 (enExample)
JP (1) JP4612849B2 (enExample)
KR (1) KR100752492B1 (enExample)
DE (1) DE602006007889D1 (enExample)
TW (1) TWI307115B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4750525B2 (ja) * 2005-10-14 2011-08-17 キヤノン株式会社 露光方法及びデバイス製造方法
EP1857879A1 (en) * 2006-05-15 2007-11-21 Advanced Mask Technology Center GmbH & Co. KG An illumination system and a photolithography apparatus
JP4914272B2 (ja) 2007-04-02 2012-04-11 エルピーダメモリ株式会社 投影露光用のレチクル、該投影露光用のレチクルの製造方法及び該レチクルを用いた半導体装置
JP2009043789A (ja) * 2007-08-06 2009-02-26 Elpida Memory Inc パターン形成方法及びマスク
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP2010199347A (ja) * 2009-02-26 2010-09-09 Canon Inc 露光方法及びデバイス製造方法
US8982324B2 (en) * 2009-12-15 2015-03-17 Asml Holding N.V. Polarization designs for lithographic apparatus
JP6363903B2 (ja) 2014-07-31 2018-07-25 株式会社キーエンス 光学的情報読取装置
DE102021211975A1 (de) * 2021-10-25 2023-04-27 Carl Zeiss Smt Gmbh Verfahren zur Nachbildung einer Ziel-Wellenfront eines abbildenden optischen Produktions-Systems sowie Metrologiesystem zur Durchführung des Verfahrens

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3119217B2 (ja) * 1997-10-31 2000-12-18 日本電気株式会社 フォトマスクおよびフォトマスクを使用した露光方法
US7217503B2 (en) * 2001-04-24 2007-05-15 Canon Kabushiki Kaisha Exposure method and apparatus
JP3937903B2 (ja) 2001-04-24 2007-06-27 キヤノン株式会社 露光方法及び装置
DE10124803A1 (de) * 2001-05-22 2002-11-28 Zeiss Carl Polarisator und Mikrolithographie-Projektionsanlage mit Polarisator
JP3958163B2 (ja) * 2002-09-19 2007-08-15 キヤノン株式会社 露光方法
JP3997199B2 (ja) * 2002-12-10 2007-10-24 キヤノン株式会社 露光方法及び装置
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
EP1450206B1 (en) * 2003-02-21 2016-04-20 Canon Kabushiki Kaisha Mask and its manufacturing method, exposure, and semiconductor device fabrication method
TWI247339B (en) * 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
KR101547077B1 (ko) * 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
JP4684584B2 (ja) * 2003-07-23 2011-05-18 キヤノン株式会社 マスク及びその製造方法、並びに、露光方法
TWI379344B (en) * 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
TW200600829A (en) * 2004-06-16 2006-01-01 Nikon Corp Optical system, exposure device, and exposure method
EP1796139A4 (en) * 2004-08-10 2009-08-26 Nikon Corp OPTICAL LIGHTING DEVICES, EXPOSURE SYSTEM AND METHOD
TWI423301B (zh) * 2005-01-21 2014-01-11 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法

Also Published As

Publication number Publication date
US20060197934A1 (en) 2006-09-07
EP1698940B1 (en) 2009-07-22
KR20060096896A (ko) 2006-09-13
KR100752492B1 (ko) 2007-08-27
TWI307115B (en) 2009-03-01
DE602006007889D1 (de) 2009-09-03
EP1698940A2 (en) 2006-09-06
TW200727337A (en) 2007-07-16
JP2006245115A (ja) 2006-09-14
US7359033B2 (en) 2008-04-15
EP1698940A3 (en) 2007-12-05

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