KR100750738B1 - 기판 매립형 인덕터 및 그 제조방법과, 마이크로 소자패키지 및 이 마이크로 소자 패키지의 캡 제조방법 - Google Patents
기판 매립형 인덕터 및 그 제조방법과, 마이크로 소자패키지 및 이 마이크로 소자 패키지의 캡 제조방법 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 238000007747 plating Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0046—Printed inductances with a conductive path having a bridge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/4906—Providing winding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/4906—Providing winding
- Y10T29/49064—Providing winding by coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49073—Electromagnet, transformer or inductor by assembling coil and core
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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- Semiconductor Integrated Circuits (AREA)
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Abstract
Description
Claims (22)
- 기판; 및상기 기판에 형성된 홀에 금속이 채워져 매립된 코일전극;을 포함하는 것을 특징으로 하는 인덕터.
- 제 1 항에 있어서,상기 코일전극은 선형 스파이럴 형상으로 배선된 것을 특징으로 하는 인덕터.
- 제 1 항에 있어서,상기 코일전극은 곡선형 스파이럴 형상으로 배선된 것을 특징으로 하는 인덕터.
- 제 2 항 또는 제 3 항에 있어서,상기 기판은 실리콘 기판인 것을 특징으로 하는 인덕터.
- 제 2 항 또는 제 3 항에 있어서,상기 코일전극은 금, 은 및 구리 중에서 선택된 어느 하나로 형성된 것을 특징으로 하는 인덕터.
- 기판;상기 기판에 형성된 홀에 금속이 채워져 매립된 코일전극;상기 기판 위에 형성된 절연층; 및상기 절연층 위에 상기 코일전극과 연결되도록 형성된 외부연결패드;를 포함하는 것을 특징으로 하는 인덕터.
- 제 6 항에 있어서,상기 코일전극은 선형 스파이럴 형상으로 배선된 것을 특징으로 하는 인덕터.
- 제 6 항에 있어서,상기 코일전극은 곡선형 스파이럴 형상으로 배선된 것을 특징으로 하는 인덕터.
- 제 7 항 또는 제 8 항에 있어서,상기 기판은 실리콘 기판인 것을 특징으로 하는 인덕터.
- 제 7 항 또는 제 8 항에 있어서,상기 코일전극은 금, 은 및 구리 중에서 선택된 어느 하나로 형성된 것을 특 징으로 하는 인덕터.
- 제 10 항에 있어서,상기 외부연결패드는 상기 코일전극과 같은 금속으로 형성된 것을 특징으로 하는 인덕터.
- 제 7 항 또는 제 8 항에 있어서,상기 절연층은 저유전물질로 형성된 것을 특징으로 하는 인덕터.
- 기판 하면에 도금용 시드층을 형성하는 단계;상기 기판의 상면에 식각 마스크 패턴을 형성하는 단계;상기 식각 마스크 패턴에 따라 상기 기판에 홀을 형성하는 단계;상기 시드층을 이용한 도금으로 상기 홀에 금속을 채워 코일전극을 형성하는 단계;상기 기판의 상면에 절연층 패턴을 형성하는 단계; 및상기 절연층 위에 외부연결패드를 형성하는 단계;를 포함하는 것을 특징으로 하는 인덕터 제조방법.
- 마이크로 소자 및 전극패드가 형성된 패키지 바디; 및 상기 마이크로 소자를 밀봉하기 위하여 상기 패키지 바디에 결합되는 캡;을 구비하는 마이크로 소자 패키지에 있어서, 상기 캡은,하면에 캐버티가 형성된 기판;상기 기판에 형성된 홀에 금속이 채워져 매립된 코일전극으로 이루어지는 인덕터;상기 기판의 하면에 상기 패키지 바디의 전극패드와 접속하도록 형성된 소자연결패드; 및상기 소자연결패드와 연결되며 상기 기판의 상면으로 노출된 제 2 외부연결패드;를 포함하는 것을 특징으로 하는 마이크로 소자 패키지.
- 제 14 항에 있어서,상기 코일전극은 선형 스파이럴 형상으로 배선된 것을 특징으로 하는 마이크로 소자 패키지.
- 제 14 항에 있어서,상기 코일전극은 곡선형 스파이럴 형상으로 배선된 것을 특징으로 하는 마이크로 소자 패키지.
- 제 15 항 또는 제 16 항에 있어서,상기 기판은 실리콘 기판인 것을 특징으로 하는 마이크로 소자 패키지.
- 제 17 항에 있어서,상기 코일전극은 금, 은 및 구리 중에서 선택된 어느 하나로 형성된 것을 특징으로 하는 마이크로 소자 패키지.
- 제 18 항에 있어서,상기 제 2 외부연결패드는 상기 코일전극과 같은 금속으로 형성된 것을 특징으로 하는 마이크로 소자 패키지.
- 제 14 항에 있어서,상기 마이크로 소자는 멤스 소자인 것을 특징으로 하는 마이크로 소자 패키지.
- 제 20 항에 있어서,상기 멤스 소자는 고주파 듀플렉서 또는 마이크로 스위치인 것을 특징으로 하는 마이크로 소자 패키지.
- 기판 하면에 캐버티를 형성하는 단계;상기 캐버티를 포함하는 기판 하면에 도금용 시드층을 형성하는 단계;상기 기판의 상면에 식각 마스크 패턴을 형성하는 단계;상기 식각 마스크 패턴에 따라 상기 기판에 홀을 형성하는 단계;상기 시드층을 이용한 도금으로 상기 홀에 금속을 채워 코일전극을 형성하는 단계;상기 기판의 상면에 절연층 패턴을 형성하는 단계;상기 절연층 위에 외부연결패드를 형성하는 단계; 및상기 기판 하면의 시드층을 패터닝하여 소자연결패드와 실링패드를 형성하는 단계;를 포함하는 것을 특징으로 하는 마이크로 소자 패키지용 캡 제조방법.
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KR1020050055796A KR100750738B1 (ko) | 2005-06-27 | 2005-06-27 | 기판 매립형 인덕터 및 그 제조방법과, 마이크로 소자패키지 및 이 마이크로 소자 패키지의 캡 제조방법 |
US11/400,637 US7408434B2 (en) | 2005-06-27 | 2006-04-10 | Inductor embedded in substrate, manufacturing method thereof, micro device package, and manufacturing method of cap for micro device package |
US12/028,420 US7963021B2 (en) | 2005-06-27 | 2008-02-08 | Inductor embedded in substrate, manufacturing method thereof, micro device package, and manufacturing method of cap for micro device package |
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KR1020050055796A KR100750738B1 (ko) | 2005-06-27 | 2005-06-27 | 기판 매립형 인덕터 및 그 제조방법과, 마이크로 소자패키지 및 이 마이크로 소자 패키지의 캡 제조방법 |
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KR20070000232A KR20070000232A (ko) | 2007-01-02 |
KR20060136202A KR20060136202A (ko) | 2007-01-02 |
KR100750738B1 true KR100750738B1 (ko) | 2007-08-22 |
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