KR100729998B1 - 유전체 자기, 유전체 자기조성물 및 제조방법과, 이것을사용한 유전체 공진기 - Google Patents
유전체 자기, 유전체 자기조성물 및 제조방법과, 이것을사용한 유전체 공진기 Download PDFInfo
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- 229910052573 porcelain Inorganic materials 0.000 title claims abstract description 59
- 239000000203 mixture Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000013078 crystal Substances 0.000 claims abstract description 286
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 96
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 73
- 239000002245 particle Substances 0.000 claims abstract description 47
- 239000000919 ceramic Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 18
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 23
- 238000010304 firing Methods 0.000 claims description 13
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- 229910052748 manganese Inorganic materials 0.000 claims description 8
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
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- 238000010586 diagram Methods 0.000 description 8
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910052779 Neodymium Inorganic materials 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
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- 229910052692 Dysprosium Inorganic materials 0.000 description 4
- 229910052693 Europium Inorganic materials 0.000 description 4
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- 229910052772 Samarium Inorganic materials 0.000 description 4
- 229910003668 SrAl Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
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- 229910000019 calcium carbonate Inorganic materials 0.000 description 4
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
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- 238000005498 polishing Methods 0.000 description 4
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- 229910000018 strontium carbonate Inorganic materials 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910002410 SrLa Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000009774 resonance method Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000001694 spray drying Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- -1 MnCo 3 Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- QFHCYMVKJALMHW-UHFFFAOYSA-J [W+4].C([O-])([O-])=O.C([O-])([O-])=O Chemical compound [W+4].C([O-])([O-])=O.C([O-])([O-])=O QFHCYMVKJALMHW-UHFFFAOYSA-J 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
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- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003703 image analysis method Methods 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
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- 238000007873 sieving Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
Description
Claims (12)
- 금속원소로서 적어도 희토류원소(Ln), Al, M(M은 Ca 및 Sr 중 하나 이상) 및 Ti를 함유하는 산화물로 이루어지고, 상기 Al의 산화물의 적어도 일부가 β-Al2O3 및 θ-Al2O3 중 하나 이상의 결정상으로서 존재하는 것을 특징으로 하는 유전체 자기.
- 제1항에 있어서, 상기 희토류원소(Ln), Al, M(M은 Ca 및 Sr 중 하나 이상) 및 Ti를 함유하는 산화물로 이루어지는 결정 중, 결정계가 육방정 및 사방정 중 하나 이상의 결정이 80체적% 이상인 것을 특징으로 하는 유전체 자기.
- 제1항 또는 제2항에 있어서, 금속원소로서 Mn, W 및 Ta 중 1종 이상을 합계로 MnO2, WO3 및 Ta2O5 환산으로 합계 0.01∼3중량% 함유하는 것을 특징으로 하는 유전체 자기.
- 제1항 또는 제2항에 있어서, 상기 β-Al2O3 및 θ-Al2O3 중 하나 이상의 결정상을 1/100000∼3체적% 함유하는 것을 특징으로 하는 유전체 자기.
- 제1항 또는 제2항에 있어서, 금속원소로서 적어도 희토류원소(Ln), Al, M(M은 Ca 및 Sr 중 하나 이상) 및 Ti를 함유하고, 조성식을aLn2Ox·bAl2O3·cMO·dTiO2 (단, 3≤x≤4)로 표시하였을 때 a, b, c, d가0.056≤a≤0.2140.056≤b≤0.2140.286≤c≤0.5000.230<d<0.470a+b+c+d=1을 만족하는 것을 특징으로 하는 유전체 자기.
- 한쌍의 입출력단자 사이에 제1항 또는 제2항에 기재된 유전체 자기를 배치하여 이루어지고, 전자계 결합에 의해 작동하도록 한 것을 특징으로 하는 유전체 공진기.
- 금속원소로서 적어도 희토류원소(Ln), Al, M(M은 Ca 및 Sr 중 하나 이상) 및 Ti를 함유하고, M 및 Ti의 산화물로 이루어지는 결정상을 주상으로 하는 결정의 평균입경이, 희토류원소(Ln) 및 Al의 산화물로 이루어지는 결정상을 주상으로 하는 결정의 평균입경보다도 큰 것을 특징으로 하는 유전체 자기조성물.
- 제7항에 있어서, M 및 Ti의 산화물로 이루어지는 결정상을 주상으로 하는 결 정의 평균입경이 12∼100㎛, 희토류원소(Ln) 및 Al의 산화물로 이루어지는 결정상을 주상으로 하는 결정의 평균입경이 3㎛ 이상 12㎛미만인 것을 특징으로 하는 유전체 자기조성물.
- 제7항 또는 제8항에 있어서, 조성식을aLn2Ox·bAl2O3·cMO·dTiO2(단, 3≤x≤4)로 표시하였을 때 a, b, c, d가0.056≤a≤0.2140.056≤b≤0.2140.286≤c≤0.5000.230<d<0.470a+b+c+d=1을 만족하는 것을 특징으로 하는 유전체 자기조성물.
- 금속원소로서 적어도 희토류원소(Ln), Al, M(M은 Ca 및 Sr 중 하나 이상) 및 Ti를 함유하는 유전체 자기조성물의 출발원료를 소정형상으로 성형한 후, 1000℃에서 1400℃까지의 평균 승온속도를 5∼100℃/시간으로 승온하고, 또한 1400℃ 이상에서의 승온속도를 310∼500℃/시간으로 승온하며, 더욱이 1500℃∼1700℃에서 적어도 15시간 이상 소성하는 공정을 포함하는 것을 특징으로 하는 유전체 자기조성물의 제조방법.
- 제10항에 있어서, 조성식을aLn2Ox·bAl2O3·cMO·dTiO2(단, 3≤x≤4)로 표시하였을 때 a, b, c, d가0.056≤a≤0.2140.056≤b≤0.2140.286≤c≤0.5000.230<d<0.470a+b+c+d=1을 만족하는 출발원료를 사용하는 것을 특징으로 하는 유전체 자기조성물의 제조방법.
- 한쌍의 입출력단자 사이에 유전체 자기를 배치하여 이루어지고, 전자계 결합에 의해 작동하는 유전체 공진기에 있어서, 상기 유전체 자기가 제7항 또는 제8항에 기재된 유전체 자기조성물로 이루어지는 것을 특징으로 하는 유전체 공진기.
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JP2000160568A JP4959043B2 (ja) | 1999-09-29 | 2000-05-30 | 誘電体磁器組成物及びその製造方法並びに誘電体共振器 |
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JP2000-191234 | 2000-06-26 | ||
JP2000191234 | 2000-06-26 | ||
JP2000282287A JP3830342B2 (ja) | 2000-06-26 | 2000-09-18 | 誘電体磁器及びこれを用いた誘電体共振器 |
JP2000-282287 | 2000-09-18 |
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AU2001236069A1 (en) * | 2000-11-20 | 2002-05-27 | Ngk Spark Plug Co., Ltd. | Microwave dielectric porcelain composition and dielectric resonator |
JP2004143033A (ja) * | 2002-08-30 | 2004-05-20 | Murata Mfg Co Ltd | 高周波用誘電体磁器組成物、誘電体共振器、誘電体フィルタ、誘電体デュプレクサおよび通信機装置 |
JP4517679B2 (ja) * | 2003-03-31 | 2010-08-04 | Tdk株式会社 | 誘電体の複素誘電率の測定装置 |
GB0700265D0 (en) * | 2007-01-08 | 2007-02-14 | Powerwave Uk Ltd | Microwave dielectric ceramic |
CN101565300A (zh) * | 2008-04-25 | 2009-10-28 | 浙江大学 | 一种低损耗微波介质陶瓷 |
CN103130499B (zh) * | 2011-11-30 | 2016-03-30 | 深圳市大富科技股份有限公司 | 一种微波介质陶瓷材料的制备方法 |
WO2013078993A1 (zh) * | 2011-11-30 | 2013-06-06 | 深圳市大富科技股份有限公司 | 一种微波介质陶瓷材料的制备方法 |
WO2013091560A1 (zh) * | 2011-12-22 | 2013-06-27 | 深圳市大富科技股份有限公司 | 一种微波介质陶瓷材料的制备方法 |
CN103864420B (zh) * | 2012-12-13 | 2017-07-14 | 深圳市大富科技股份有限公司 | 一种微波介质陶瓷材料的制备方法 |
CN110845226A (zh) * | 2019-11-29 | 2020-02-28 | 杭州电子科技大学 | 一种微波介质陶瓷材料SrGa2O4及其制备方法 |
CN113860871B (zh) * | 2021-11-03 | 2022-12-13 | 电子科技大学 | 一种低温烧结改性NiO-Ta2O5基微波介质陶瓷材料及其制备方法 |
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US5356844A (en) * | 1992-06-24 | 1994-10-18 | Kyocera Corporation | Dielectric ceramic composition and dielectric resonator |
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JPH04118807A (ja) | 1990-05-15 | 1992-04-20 | Sanyo Electric Co Ltd | マイクロ波用誘電体磁器組成物 |
JP3559434B2 (ja) * | 1997-09-30 | 2004-09-02 | 京セラ株式会社 | 誘電体磁器組成物の製造方法 |
JP3974723B2 (ja) | 1998-01-14 | 2007-09-12 | 京セラ株式会社 | 誘電体磁器の製造方法 |
KR100415757B1 (ko) * | 1999-01-14 | 2004-01-31 | 교오세라 가부시키가이샤 | 유전체 자기(誘電體磁器)조성물, 유전체 자기의 제조방법 및 유전체 공진기(共振器) |
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KR20010109472A (ko) | 2001-12-10 |
US6656864B2 (en) | 2003-12-02 |
EP1160221A3 (en) | 2004-03-03 |
EP1160221A2 (en) | 2001-12-05 |
US20020045532A1 (en) | 2002-04-18 |
EP1160221B1 (en) | 2016-07-20 |
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