KR100710608B1 - 데이터 손실을 위한 전검출을 갖는 플래시 메모리 - Google Patents
데이터 손실을 위한 전검출을 갖는 플래시 메모리 Download PDFInfo
- Publication number
- KR100710608B1 KR100710608B1 KR1020040029839A KR20040029839A KR100710608B1 KR 100710608 B1 KR100710608 B1 KR 100710608B1 KR 1020040029839 A KR1020040029839 A KR 1020040029839A KR 20040029839 A KR20040029839 A KR 20040029839A KR 100710608 B1 KR100710608 B1 KR 100710608B1
- Authority
- KR
- South Korea
- Prior art keywords
- cell
- read
- selected cell
- states
- read state
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EU03392005.9 | 2003-04-29 | ||
EM03392005.9 | 2003-04-29 | ||
EP03392005A EP1473739A1 (en) | 2003-04-29 | 2003-04-29 | Flash memory with pre-detection for data loss |
US10/438,682 | 2003-05-15 | ||
US10/438,682 US6819589B1 (en) | 2003-04-29 | 2003-05-15 | Flash memory with pre-detection for data loss |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040093470A KR20040093470A (ko) | 2004-11-05 |
KR100710608B1 true KR100710608B1 (ko) | 2007-04-24 |
Family
ID=34066521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040029839A KR100710608B1 (ko) | 2003-04-29 | 2004-04-29 | 데이터 손실을 위한 전검출을 갖는 플래시 메모리 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2004355793A (zh) |
KR (1) | KR100710608B1 (zh) |
CN (1) | CN1591693A (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7447944B2 (en) * | 2005-04-29 | 2008-11-04 | Freescale Semiconductor, Inc. | Predictive methods and apparatus for non-volatile memory |
KR100794664B1 (ko) | 2006-09-01 | 2008-01-14 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 리프레쉬 방법 |
KR100875979B1 (ko) | 2007-04-19 | 2008-12-24 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및그것의 엘에스비 읽기 방법 |
US7800951B2 (en) * | 2007-08-20 | 2010-09-21 | Marvell World Trade Ltd. | Threshold voltage digitizer for array of programmable threshold transistors |
KR102050473B1 (ko) | 2012-09-24 | 2019-11-29 | 삼성전자주식회사 | 리프레쉬 주기를 조절하는 반도체 메모리 장치 및 메모리 시스템 |
CN104182026B (zh) * | 2014-08-12 | 2018-02-27 | 上海新储集成电路有限公司 | 一种非实时时钟的设计方法 |
KR20160105100A (ko) * | 2015-02-27 | 2016-09-06 | 에스케이하이닉스 주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법 및 그것을 포함하는 데이터 저장 장치 |
CN106024063A (zh) * | 2016-07-19 | 2016-10-12 | 北京兆易创新科技股份有限公司 | 一种非易失性存储器的数据读取装置及方法 |
CN107633865B (zh) * | 2016-07-19 | 2024-02-20 | 兆易创新科技集团股份有限公司 | 一种非易失性存储器的数据读取装置及方法 |
CN106024062B (zh) * | 2016-07-19 | 2023-12-05 | 兆易创新科技集团股份有限公司 | 一种非易失性存储器的数据读取装置及方法 |
CN109841257B (zh) * | 2017-11-29 | 2020-11-06 | 西安格易安创集成电路有限公司 | 存储器的阈值电压的恢复方法及装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040029839A (ko) * | 2002-10-02 | 2004-04-08 | 현대자동차주식회사 | 공작기계용 홀더 |
-
2004
- 2004-04-29 CN CNA2004100550563A patent/CN1591693A/zh active Pending
- 2004-04-29 KR KR1020040029839A patent/KR100710608B1/ko not_active IP Right Cessation
- 2004-04-30 JP JP2004135212A patent/JP2004355793A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040029839A (ko) * | 2002-10-02 | 2004-04-08 | 현대자동차주식회사 | 공작기계용 홀더 |
Non-Patent Citations (1)
Title |
---|
1020040029839 - 648918 |
Also Published As
Publication number | Publication date |
---|---|
KR20040093470A (ko) | 2004-11-05 |
CN1591693A (zh) | 2005-03-09 |
JP2004355793A (ja) | 2004-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7054197B2 (en) | Method for reading a nonvolatile memory device and nonvolatile memory device implementing the reading method | |
US6819589B1 (en) | Flash memory with pre-detection for data loss | |
US6525960B2 (en) | Nonvolatile semiconductor memory device including correction of erratic memory cell data | |
US7564718B2 (en) | Method for programming a block of memory cells, non-volatile memory device and memory card device | |
US7477550B2 (en) | NAND flash memory device and method of improving characteristic of a cell in the same | |
US6751118B2 (en) | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system | |
US7149110B2 (en) | Seek window verify program system and method for a multilevel non-volatile memory integrated circuit system | |
KR100382693B1 (ko) | 플래시 메모리용 센스 증폭기 | |
KR100784867B1 (ko) | 엠에스비 프로그램 상태를 저장하는 플래그 셀들을구비하는 비휘발성 메모리 장치 | |
USRE44350E1 (en) | Nonvolatile semiconductor memory including multi-threshold voltage memory cells including voltage ranges indicating either an erase state or a two or more program state | |
US6621745B1 (en) | Row decoder circuit for use in programming a memory device | |
US6747894B2 (en) | Nonvolatile multilevel cell memory | |
US20030103406A1 (en) | Digital multilevel memory system having multistage autozero sensing | |
US7227790B2 (en) | NOR flash memory device with a serial sensing operation and method of sensing data bits in a NOR flash memory device | |
US20030103400A1 (en) | Multistage autozero sensing for a multilevel non-volatile memory integrated circuit system | |
US7483324B2 (en) | Memory device and method providing an average threshold based refresh mechanism | |
KR100710608B1 (ko) | 데이터 손실을 위한 전검출을 갖는 플래시 메모리 | |
US6178114B1 (en) | Sensing apparatus and method for fetching multi-level cell data | |
US7330375B2 (en) | Sense amplifier circuit for parallel sensing of four current levels | |
US7190621B2 (en) | Sensing scheme for a non-volatile semiconductor memory cell | |
CN110383384B (zh) | 存储器装置和用于操作或测试存储器装置的方法 | |
US6515905B2 (en) | Nonvolatile semiconductor memory device having testing capabilities | |
KR100313613B1 (ko) | 불휘발성반도체메모리장치 | |
US8031523B2 (en) | Memory and reading method thereof | |
US6934185B2 (en) | Programming method for non volatile multilevel memory cells and corresponding programming circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |