JP2004355793A - データ損失の事前検出付きフラッシュメモリ - Google Patents

データ損失の事前検出付きフラッシュメモリ Download PDF

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Publication number
JP2004355793A
JP2004355793A JP2004135212A JP2004135212A JP2004355793A JP 2004355793 A JP2004355793 A JP 2004355793A JP 2004135212 A JP2004135212 A JP 2004135212A JP 2004135212 A JP2004135212 A JP 2004135212A JP 2004355793 A JP2004355793 A JP 2004355793A
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JP
Japan
Prior art keywords
cell
read
selected cell
read state
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004135212A
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English (en)
Japanese (ja)
Inventor
Thomas Aakjer
トーマス・アーケル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dialog Semiconductor GmbH
Original Assignee
Dialog Semiconductor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP03392005A external-priority patent/EP1473739A1/en
Application filed by Dialog Semiconductor GmbH filed Critical Dialog Semiconductor GmbH
Publication of JP2004355793A publication Critical patent/JP2004355793A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring

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  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2004135212A 2003-04-29 2004-04-30 データ損失の事前検出付きフラッシュメモリ Pending JP2004355793A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03392005A EP1473739A1 (en) 2003-04-29 2003-04-29 Flash memory with pre-detection for data loss
US10/438,682 US6819589B1 (en) 2003-04-29 2003-05-15 Flash memory with pre-detection for data loss

Publications (1)

Publication Number Publication Date
JP2004355793A true JP2004355793A (ja) 2004-12-16

Family

ID=34066521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004135212A Pending JP2004355793A (ja) 2003-04-29 2004-04-30 データ損失の事前検出付きフラッシュメモリ

Country Status (3)

Country Link
JP (1) JP2004355793A (zh)
KR (1) KR100710608B1 (zh)
CN (1) CN1591693A (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100794664B1 (ko) 2006-09-01 2008-01-14 삼성전자주식회사 플래시 메모리 장치 및 그것의 리프레쉬 방법
JP2008539533A (ja) * 2005-04-29 2008-11-13 フリースケール セミコンダクター インコーポレイテッド 不揮発性メモリのための予測方法及び装置
US7672162B2 (en) 2007-04-19 2010-03-02 Samsung Electronics Co., Ltd. Non-volatile memory device, memory system, and LSB read method
JP2010537360A (ja) * 2007-08-20 2010-12-02 マーベル ワールド トレード リミテッド 閾値がプログラム可能なトランジスタアレイ用の閾値電圧デジタル化装置
US9153294B2 (en) 2012-09-24 2015-10-06 Samsung Electronics Co., Ltd. Semiconductor memory device having adjustable refresh period, memory system comprising same, and method of operating same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104182026B (zh) * 2014-08-12 2018-02-27 上海新储集成电路有限公司 一种非实时时钟的设计方法
KR20160105100A (ko) * 2015-02-27 2016-09-06 에스케이하이닉스 주식회사 불휘발성 메모리 장치, 그것의 동작 방법 및 그것을 포함하는 데이터 저장 장치
CN107633865B (zh) * 2016-07-19 2024-02-20 兆易创新科技集团股份有限公司 一种非易失性存储器的数据读取装置及方法
CN106024062B (zh) * 2016-07-19 2023-12-05 兆易创新科技集团股份有限公司 一种非易失性存储器的数据读取装置及方法
CN106024063A (zh) * 2016-07-19 2016-10-12 北京兆易创新科技股份有限公司 一种非易失性存储器的数据读取装置及方法
CN109841257B (zh) * 2017-11-29 2020-11-06 西安格易安创集成电路有限公司 存储器的阈值电压的恢复方法及装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100456855B1 (ko) * 2002-10-02 2004-11-10 현대자동차주식회사 공작기계용 홀더

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008539533A (ja) * 2005-04-29 2008-11-13 フリースケール セミコンダクター インコーポレイテッド 不揮発性メモリのための予測方法及び装置
KR100794664B1 (ko) 2006-09-01 2008-01-14 삼성전자주식회사 플래시 메모리 장치 및 그것의 리프레쉬 방법
US7586790B2 (en) 2006-09-01 2009-09-08 Samsung Electronics Co., Ltd. Flash memory device and refresh method
US7672162B2 (en) 2007-04-19 2010-03-02 Samsung Electronics Co., Ltd. Non-volatile memory device, memory system, and LSB read method
JP2010537360A (ja) * 2007-08-20 2010-12-02 マーベル ワールド トレード リミテッド 閾値がプログラム可能なトランジスタアレイ用の閾値電圧デジタル化装置
US9153294B2 (en) 2012-09-24 2015-10-06 Samsung Electronics Co., Ltd. Semiconductor memory device having adjustable refresh period, memory system comprising same, and method of operating same

Also Published As

Publication number Publication date
KR100710608B1 (ko) 2007-04-24
CN1591693A (zh) 2005-03-09
KR20040093470A (ko) 2004-11-05

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