KR100709990B1 - 막형성재료, 막형성방법 및 소자 - Google Patents

막형성재료, 막형성방법 및 소자 Download PDF

Info

Publication number
KR100709990B1
KR100709990B1 KR1020030022556A KR20030022556A KR100709990B1 KR 100709990 B1 KR100709990 B1 KR 100709990B1 KR 1020030022556 A KR1020030022556 A KR 1020030022556A KR 20030022556 A KR20030022556 A KR 20030022556A KR 100709990 B1 KR100709990 B1 KR 100709990B1
Authority
KR
South Korea
Prior art keywords
film forming
film
group
sih
forming material
Prior art date
Application number
KR1020030022556A
Other languages
English (en)
Korean (ko)
Other versions
KR20030089425A (ko
Inventor
마치다히데아키
오시타요시오
이시카와마사토
가다다케시
Original Assignee
가부시키가이샤 트리케미컬 겐큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 트리케미컬 겐큐쇼 filed Critical 가부시키가이샤 트리케미컬 겐큐쇼
Publication of KR20030089425A publication Critical patent/KR20030089425A/ko
Application granted granted Critical
Publication of KR100709990B1 publication Critical patent/KR100709990B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020030022556A 2002-05-16 2003-04-10 막형성재료, 막형성방법 및 소자 KR100709990B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00141007 2002-05-16
JP2002141007A JP4437636B2 (ja) 2002-05-16 2002-05-16 膜形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020060050517A Division KR100733825B1 (ko) 2002-05-16 2006-06-05 막형성재료, 막형성방법 및 소자

Publications (2)

Publication Number Publication Date
KR20030089425A KR20030089425A (ko) 2003-11-21
KR100709990B1 true KR100709990B1 (ko) 2007-04-20

Family

ID=29701715

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020030022556A KR100709990B1 (ko) 2002-05-16 2003-04-10 막형성재료, 막형성방법 및 소자
KR1020060050517A KR100733825B1 (ko) 2002-05-16 2006-06-05 막형성재료, 막형성방법 및 소자

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020060050517A KR100733825B1 (ko) 2002-05-16 2006-06-05 막형성재료, 막형성방법 및 소자

Country Status (2)

Country Link
JP (1) JP4437636B2 (ja)
KR (2) KR100709990B1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5280843B2 (ja) 2006-05-25 2013-09-04 ルネサスエレクトロニクス株式会社 金属化合物層の形成方法、及び金属化合物層の形成装置
JP5088773B2 (ja) * 2007-03-19 2012-12-05 株式会社トリケミカル研究所 膜形成方法および膜形成材料
JP5725454B2 (ja) * 2011-03-25 2015-05-27 株式会社アルバック ＮｉＳｉ膜の形成方法、シリサイド膜の形成方法、シリサイドアニール用金属膜の形成方法、真空処理装置、及び成膜装置
JP6584150B2 (ja) * 2014-06-09 2019-10-02 東ソー株式会社 コバルト錯体及びその製造方法、コバルト含有薄膜及びその作製方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11256330A (ja) * 1998-03-06 1999-09-21 Tori Chemical Kenkyusho:Kk 膜形成方法及び膜形成材料

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0799391B2 (ja) * 1987-12-24 1995-10-25 株式会社フジタ 移動計測対象物の自己位置自動計測システム
JP2887240B2 (ja) * 1990-03-09 1999-04-26 日本電信電話株式会社 薄膜成長方法および装置
JP3163687B2 (ja) * 1991-11-12 2001-05-08 富士通株式会社 化学気相成長装置及び化学気相成長膜形成方法
JPH0689874A (ja) * 1992-07-17 1994-03-29 Nec Corp 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11256330A (ja) * 1998-03-06 1999-09-21 Tori Chemical Kenkyusho:Kk 膜形成方法及び膜形成材料

Also Published As

Publication number Publication date
KR20060080907A (ko) 2006-07-11
KR100733825B1 (ko) 2007-07-02
KR20030089425A (ko) 2003-11-21
JP4437636B2 (ja) 2010-03-24
JP2003328130A (ja) 2003-11-19

Similar Documents

Publication Publication Date Title
KR102386744B1 (ko) 작은 임계 치수의 피쳐에서 텅스텐 컨택 저항을 개선하는 방법
JP4959568B2 (ja) 不動態化された金属層を形成する方法及びシステム
Norman et al. New OMCVD precursors for selective copper metallization
US6319728B1 (en) Method for treating a deposited film for resistivity reduction
CN103107120A (zh) 对基板表面做预先处理以进行金属沉积的工艺和集成系统
Cwik et al. Thermal atomic layer deposition of ruthenium metal thin films using nonoxidative coreactants
JP4581119B2 (ja) ＮｉＳｉ膜形成材料およびＮｉＳｉ膜形成方法
US20060068103A1 (en) Film forming method
KR100709990B1 (ko) 막형성재료, 막형성방법 및 소자
KR20060013321A (ko) 막형성재료, 막형성방법 및 소자
US9631278B2 (en) Metal silicide formation through an intermediate metal halogen compound
US7312140B2 (en) Film forming method
Rayner et al. Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
KR100723807B1 (ko) 막형성재료, 막형성방법 및 소자
KR20100095383A (ko) 증착 챔버 내에서 산화로부터의 도전체 보호
TWI515803B (zh) 矽化鉭內的摻雜鋁
KR100639458B1 (ko) ＴａＳＩＮ막을 사용한 확산 방지막 형성 방법 및 이를이용한 금속 배선 형성 방법
US20060068101A1 (en) Film forming method
US11713507B2 (en) Low-k films
KR101128303B1 (ko) 막형성재료, 막형성방법 및 소자
JP2022090148A (ja) 原子層エッチング法用エッチング材料
KR20060029120A (ko) 막형성재료, 막형성방법 및 소자

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
A107 Divisional application of patent
AMND Amendment
J201 Request for trial against refusal decision
E902 Notification of reason for refusal
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130325

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20140319

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20150309

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20160311

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20170224

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20180327

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20190304

Year of fee payment: 13

FPAY Annual fee payment

Payment date: 20200304

Year of fee payment: 14