KR100704249B1 - 이중 웨이퍼 부착 방법 - Google Patents
이중 웨이퍼 부착 방법 Download PDFInfo
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- KR100704249B1 KR100704249B1 KR1020027001481A KR20027001481A KR100704249B1 KR 100704249 B1 KR100704249 B1 KR 100704249B1 KR 1020027001481 A KR1020027001481 A KR 1020027001481A KR 20027001481 A KR20027001481 A KR 20027001481A KR 100704249 B1 KR100704249 B1 KR 100704249B1
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- 238000000034 method Methods 0.000 title claims description 55
- 230000009977 dual effect Effects 0.000 title description 3
- 235000012431 wafers Nutrition 0.000 claims abstract description 79
- 239000004642 Polyimide Substances 0.000 claims abstract description 55
- 229920001721 polyimide Polymers 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 5
- 238000004377 microelectronic Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- 229910000856 hastalloy Inorganic materials 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 61
- 239000010408 film Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- XAGFODPZIPBFFR-BJUDXGSMSA-N Aluminum-26 Chemical compound [26Al] XAGFODPZIPBFFR-BJUDXGSMSA-N 0.000 description 1
- 241001428214 Polyides Species 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
- G01K7/028—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples using microstructures, e.g. made of silicon
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Micromachines (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (16)
- 미세구조를 부착하는 방법에 있어서,제1 연결부 세트를 갖는 제1 미세구조를 상부측에 가지고 있는 제1 웨이퍼를 제공하는 단계;제2 연결부 세트를 갖는 제2 미세구조를 상부측에 가지고 있는 제2 웨이퍼를 제공하는 단계;하나의 웨이퍼의 상부측에 폴리이미드층을 도포하는 단계;제1 웨이퍼의 상부측과 제2 웨이퍼의 상부측을 서로 대향하게 하는 단계;제1 및 제2 웨이퍼를 서로에 대해 정렬시키는 단계;상기 폴리이미드층의 대향하는 표면에서 각 웨이퍼의 상부측으로 제1 웨이퍼와 제2 웨이퍼를 접합하는 단계;제1 연결부 세트에서부터 폴리이미드층을 관통하여 제2 연결부 세트까지 적어도 하나의 구멍을 에칭하는 단계; 및제1 연결부 세트의 적어도 하나의 접촉부와 제2 연결부 세트의 적어도 하나의 접촉부 사이를 연결하는 적어도 하나의 포스트를 형성하기 위해, 도전성 재료를 상기 적어도 하나의 구멍에 증착하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 폴리이미드층을 제거하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 제 2 항에 있어서, 상기 제1 및 제2 미세구조가 상기 적어도 하나의 포스트에 의해 서로 구조적으로 연결되어 있는 것을 특징으로 하는 방법.
- 제 3 항에 있어서, 상기 제1 및 l제 미세구조는 상기 적어도 하나의 포스트에 의해 서로 열적으로 차단되어 있는 것을 특징으로 하는 방법.
- 제 4 항에 있어서, 상기 제1 및 제2 미세구조가 복수의 포스트에 의해 전기적으로 및 구조적으로 서로 연결되어 있는 것을 특징으로 하는 방법.
- 제 5 항에 있어서, 상기 제1 및 제2 미세구조가 서로 열적으로 차단되어 있는 것을 특징으로 하는 방법.
- 제 6 항에 있어서, 상기 폴리이미드가 희생 재료인 것을 특징으로 하는 방법.
- 제 6 항에 있어서, 상기 제2 웨이퍼가 자신의 미세구조로부터 제거되는 것을 특징으로 하는 방법.
- 제 5 항에 있어서,상기 제1 미세구조가 고온 공정에서 제조되고, 상기 제2 미세구조는 저온 공정에서 제조되는 것을 특징으로 하는 방법.
- 제 5 항에 있어서, 각 포스트에 접속되어 있는 포스트 연장부를 더 포함하는 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 상기 적어도 하나의 구멍을 에칭하기 이전에, 상기 제1 및 제2 웨이퍼 사이에 제2 폴리이미드층을 더 포함하는 것을 특징으로 하는 방법.
- 제 11 항에 있어서, 상기 제1 및 제2 웨이퍼의 접합 이전에, 상기 폴리이미드층들이 소프트 베이킹되는 것을 특징으로 하는 방법.
- 제 6 항에 있어서, 포스트에 전기적 및 구조적으로 접속되고 열적으로는 차단되는 부가적인 미세구조를 더 포함하는 것을 특징으로 하는 방법.
- 제1 및 제2 실리콘 웨이퍼를 부착하는 방법에 있어서,상기 제1 실리콘 웨이퍼 위에 미세전자소자를 형성하는 단계;상기 제2 실리콘 웨이퍼 위에 미세구조를 형성하는 단계;상기 미세전자소자를 제1 두께를 갖는 제1 희생 폴리이미드 접합재로 코팅하는 단계;상기 미세구조를 제2 두께를 갖는 제2 희생 폴리이미드 접합재로 코팅하는 단계;상기 제1 및 제2 실리콘 웨이퍼를 정렬시키는 단계;상기 제1 및 제2 희생 폴리이미드 접합재를 서로 접합시키는 단계; 및상기 코팅들을 융합하여 상기 제1 및 제2 희생 폴리이미드 접합재 사이 및 상기 미세전자소자와 미세구조 사이에 접합을 형성하고, 이에 따라 상기 제1 및 제2 희생 폴리이미드 접합재의 상기 제1 두께 및 제2 두께의 각각이 상기 미세전자소자 및 상기 미세구조 사이의 간격을 결정하게 되는 것을 특징으로 하는 방법.
- 삭제
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/365,703 | 1999-08-02 | ||
US09/365,703 US6287940B1 (en) | 1999-08-02 | 1999-08-02 | Dual wafer attachment process |
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Publication Number | Publication Date |
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KR20020020954A KR20020020954A (ko) | 2002-03-16 |
KR100704249B1 true KR100704249B1 (ko) | 2007-04-05 |
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KR1020027001481A KR100704249B1 (ko) | 1999-08-02 | 2000-08-02 | 이중 웨이퍼 부착 방법 |
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Country | Link |
---|---|
US (1) | US6287940B1 (ko) |
EP (1) | EP1198835B1 (ko) |
JP (1) | JP4890708B2 (ko) |
KR (1) | KR100704249B1 (ko) |
CN (1) | CN1377512A (ko) |
AU (1) | AU6754600A (ko) |
CA (1) | CA2381081C (ko) |
WO (1) | WO2001009948A1 (ko) |
Families Citing this family (58)
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US6969635B2 (en) * | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
DE19856573C1 (de) * | 1998-12-08 | 2000-05-18 | Fraunhofer Ges Forschung | Verfahren zur vertikalen Integration von aktiven Schaltungsebenen und unter Verwendung desselben erzeugte vertikale integrierte Schaltung |
JP2001102523A (ja) * | 1999-09-28 | 2001-04-13 | Sony Corp | 薄膜デバイスおよびその製造方法 |
SE0000148D0 (sv) * | 2000-01-17 | 2000-01-17 | Forskarpatent I Syd Ab | Tillverkningsförfarande för IR-detektormatriser |
US20050048688A1 (en) * | 2000-12-07 | 2005-03-03 | Patel Satyadev R. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US7307775B2 (en) | 2000-12-07 | 2007-12-11 | Texas Instruments Incorporated | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
EP1370497B1 (en) * | 2001-03-09 | 2007-08-22 | Datec Coating Corporation | Sol-gel derived resistive and conductive coating |
US7189595B2 (en) * | 2001-05-31 | 2007-03-13 | International Business Machines Corporation | Method of manufacture of silicon based package and devices manufactured thereby |
US6878608B2 (en) * | 2001-05-31 | 2005-04-12 | International Business Machines Corporation | Method of manufacture of silicon based package |
US7145165B2 (en) * | 2001-09-12 | 2006-12-05 | Honeywell International Inc. | Tunable laser fluid sensor |
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EP1198835A1 (en) | 2002-04-24 |
CN1377512A (zh) | 2002-10-30 |
AU6754600A (en) | 2001-02-19 |
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EP1198835B1 (en) | 2015-11-11 |
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