KR100678358B1 - 스퍼터링 타겟을 백킹 플레이트에 접착하는 방법 - Google Patents
스퍼터링 타겟을 백킹 플레이트에 접착하는 방법 Download PDFInfo
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- KR100678358B1 KR100678358B1 KR1020000037067A KR20000037067A KR100678358B1 KR 100678358 B1 KR100678358 B1 KR 100678358B1 KR 1020000037067 A KR1020000037067 A KR 1020000037067A KR 20000037067 A KR20000037067 A KR 20000037067A KR 100678358 B1 KR100678358 B1 KR 100678358B1
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000005477 sputtering target Methods 0.000 title description 4
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- 239000000463 material Substances 0.000 claims description 34
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 239000011156 metal matrix composite Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
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- 229910052786 argon Inorganic materials 0.000 description 1
- FFMMWFUIRQUAKA-UHFFFAOYSA-O azanium;2-methyl-1,3,5-trinitrobenzene;nitrate Chemical compound [NH4+].[O-][N+]([O-])=O.CC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O FFMMWFUIRQUAKA-UHFFFAOYSA-O 0.000 description 1
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
폭발이 완료된 후에, 도 4에 도시된 바와 같이, 접착 계면(20)에서 백킹 플레이트(12)에 접착된 스퍼터 타겟(10)을 가지는 접착된 스퍼터 타겟/백킹 플레이트 조립체(30)가 존재한다. 접착 계면(20)은 폭발 접촉 공정의 결과로 파형 형태의 지형을 갖는다. 강한 원자/금속 결합이 스퍼터 타겟(10)과 백킹 플레이트(12) 사이에 형성되지만, 파형 형태 접착 계면(20)과 관련된 국지적 변형을 제외하고 스퍼터 타겟 또는 백킹 플레이트 재료의 금속 결합 특성에 대한 어떠한 변경도 발생하지 않는다. 폭발 접착 공정은 상승되지 않은 온도에서 발생하고, 공정으로부터 발생된 열은 백킹과 타겟 금속 요소로의 열전달하기에 충분하지 않은 시간 동안 발생되고; 따라서, 온도 증가는 백킹과 타겟 금속에서 입자 성장을 야기하도록 감지할 수 있을 정도가 아니다.
도 5를 참조하여, 스퍼터 타겟 블랭크(10)가 직경에 있어서 백킹 플레이트(12)보다 작은 대안적인 실시예가 제공된다. 폭발 접착 공정 동안, 백킹 플레이트(12)의 노출된 상부면에 대한 손상은 스퍼터 타겟 블랭크(10)가 백킹 플레이트(12)보다 작은 경우에 발생한다. 그래서, 본 실시예에서, 링(32)이 하부 접착표면(14)의 직경을 효율적으로 증가시키도록 스퍼터 타겟(10) 주위에 배치되어, 백킹 플레이트(12)의 상부 접착면(16)의 직경과 일치시킨다. 링(32)이 결합된 타겟 블랭크(10)는 그런 다음 백킹 플레이트(12)의 상부 접착면(16)에 근접하게 위치되고, 폭약 물질(22)은 도 6에 도시된 바와 같은 타겟/백킹 조립체(34)를 형성하도록 상기된 바와 같이 폭발된다.
Claims (6)
- 접착된 스퍼터 타겟/백킹 플레이트 조립체 형성 방법으로서,상부 접착 표면을 갖는 백킹 플레이트를 제공하는 단계;상기 백킹 플레이트의 상부 접착 표면의 직경보다 작은 직경의 하부 접착 표면을 갖는 스퍼터 타겟을 제공하는 단계;상기 하부 접착 표면의 직경을 상기 상부 접착 표면의 직경과 동일하게 증가시키도록 상기 스퍼터 타겟 주위에 링을 제공하는 단계;접착 계면에 원자 접착을 형성하도록 하나 이상의 제어된 폭발에 의해 상기 상부 및 하부 표면 중 하나 이상을 서로를 향해 가속시키는 것에 의하여 백킹 플레이트에 상기 스퍼터 타겟과 링을 폭발 접착하는 단계로서,상기 스퍼터 타겟 및 백킹 플레이트 재료의 미세구조 및 특성이 상기 폭발 접착 단계에 의해서는 변화되지 않은 채로 유지되는 단계; 및접착된 스퍼터 타겟/백킹 플레이트 조립체를 증착 챔버에 고정하기 위하여 백킹 플레이트로 이루어진 사전 결정된 두께의 주변 플랜지를 형성하도록 상기 링을 접착 계면까지 제거하는 가공 단계를 포함하는 접착된 스퍼터 타겟/백킹 플레이트 조립체 형성 방법.
- 제 1 항에 있어서, 상기 스퍼터 타겟은 알루미늄, 티타늄, 탄탈륨, 텅스텐, 코발트, 니켈, 구리 및 그들의 합금으로 이루어진 그룹으로부터 선택되는 재료를 포함하는 접착된 스퍼터 타겟/백킹 플레이트 조립체 형성 방법.
- 제 1 항에 있어서, 상기 백킹 플레이트는 알루미늄, 구리 및 금속 매트릭스 복합물로 이루어진 그룹으로부터 선택되는 재료를 포함하는 접착된 스퍼터 타겟/백킹 플레이트 조립체 형성 방법.
- 하부 접착 표면을 갖는 스퍼터 타겟을 제공하는 단계;상기 스퍼터 타겟의 하부 접착 표면의 직경과 동일한 직경의 상부 접착 표면을 갖는 백킹 플레이트를 제공하는 단계;접착 계면에 원자 접착부를 형성하도록 하나 이상의 제어된 폭발에 의해 상기 상부 및 하부 표면 중 하나 이상을 서로를 향하여 가속시키는 것에 의하여 상기 스퍼터 타겟을 상기 백킹 플레이트에 폭발 접착하는 단계로서,상기 스퍼터 타겟 및 백킹 플레이트 재료의 미세구조 및 특성이 상기 폭발 접착 단계에 의해서는 변화되지 않은 채로 유지하는 단계; 및접착된 스퍼터 타겟/백킹 플레이트 조립체를 증착 챔버 내에 고정하기 위하여, 상기 접착 계면에 의해 구분되는 상기 스퍼터 타겟인 상부 부분과 상기 백킹 플레이트인 하부 부분으로 이루어진 사전 결정된 두께의 주변 플랜지를 형성하도록, 상기 접착 계면 위의 깊이까지 상기 스퍼터 타겟의 외측 부분을 제거하는 가공 단계를 포함하는 접착된 스퍼터 타겟/백킹 플레이트 조립체 형성 방법.
- 제 4 항에 있어서, 상기 스퍼터 타겟은 알루미늄, 티타늄, 탄탈륨, 텅스텐, 코발트, 니켈, 구리 및 그들의 합금으로 이루어진 그룹으로부터 선택되는 재료를 포함하는 접착된 스퍼터 타겟/백킹 플레이트 조립체 형성 방법.
- 제 4 항에 있어서, 상기 백킹 플레이트는 알루미늄, 구리 및 금속 매트릭스 복합물로 이루어진 그룹으로부터 선택되는 재료를 포함하는 접착된 스퍼터 타겟/백킹 플레이트 조립체 형성 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/349,285 | 1999-07-08 | ||
US09/349,285 US6164519A (en) | 1999-07-08 | 1999-07-08 | Method of bonding a sputtering target to a backing plate |
Publications (2)
Publication Number | Publication Date |
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KR20010015117A KR20010015117A (ko) | 2001-02-26 |
KR100678358B1 true KR100678358B1 (ko) | 2007-02-05 |
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KR1020000037067A KR100678358B1 (ko) | 1999-07-08 | 2000-06-30 | 스퍼터링 타겟을 백킹 플레이트에 접착하는 방법 |
Country Status (6)
Country | Link |
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US (1) | US6164519A (ko) |
EP (1) | EP1067209B1 (ko) |
JP (1) | JP4672834B2 (ko) |
KR (1) | KR100678358B1 (ko) |
DE (1) | DE60031915T2 (ko) |
TW (1) | TW527428B (ko) |
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US6521108B1 (en) * | 1998-12-29 | 2003-02-18 | Tosoh Smd, Inc. | Diffusion bonded sputter target assembly and method of making same |
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WO2001034339A1 (en) * | 1999-11-09 | 2001-05-17 | Tosoh Smd, Inc. | Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin |
US6780794B2 (en) * | 2000-01-20 | 2004-08-24 | Honeywell International Inc. | Methods of bonding physical vapor deposition target materials to backing plate materials |
US6698647B1 (en) | 2000-03-10 | 2004-03-02 | Honeywell International Inc. | Aluminum-comprising target/backing plate structures |
US6619537B1 (en) * | 2000-06-12 | 2003-09-16 | Tosoh Smd, Inc. | Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers |
JP2004529269A (ja) * | 2001-04-26 | 2004-09-24 | ハネウェル・インターナショナル・インコーポレーテッド | モリブデン及びアルミニウムを含むアセンブリ;ターゲット/バッキングプレートアセンブリを作製するときに中間層を用いる方法 |
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- 2000-06-28 EP EP00305453A patent/EP1067209B1/en not_active Expired - Lifetime
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EP1067209B1 (en) | 2006-11-22 |
DE60031915D1 (de) | 2007-01-04 |
EP1067209A1 (en) | 2001-01-10 |
US6164519A (en) | 2000-12-26 |
KR20010015117A (ko) | 2001-02-26 |
JP4672834B2 (ja) | 2011-04-20 |
JP2001032065A (ja) | 2001-02-06 |
TW527428B (en) | 2003-04-11 |
DE60031915T2 (de) | 2007-05-24 |
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