KR100662488B1 - Thin Film Transistor-Liquid Crystal Display Panel and Fabrication Method for the same - Google Patents
Thin Film Transistor-Liquid Crystal Display Panel and Fabrication Method for the same Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 52
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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Abstract
본 발명은 TFT-LCD 패널 및 그 제조 방법에 관한 것으로서, 제 1 기판과 제 2 기판 사이에 액정이 주입된 TFT-LCD 패널에 있어서, 상기 제 1 기판 상에 형성된 복수의 칼라필터 패턴; 상기 칼라필터 패턴 상에 형성된 절연막; 상기 절연막 상에 형성된 베리어층; 상기 베리어층 상에 구리로 이루어진 게이트 전극을 갖고 형성된 박막 트랜지스터를 포함하여 구성되며, 절연막을 O2 플라즈마 등의 분위기에서 산화처리하여 베리어층을 형성함으로써 절연막과 박막 트랜지스터의 게이트 전극간의 접착력을 높이고, 또한 게이트 전극 물질로 구리를 이용함으로써 저저항 배선을 할 수 있다.The present invention relates to a TFT-LCD panel and a method of manufacturing the same, comprising: a TFT-LCD panel in which a liquid crystal is injected between a first substrate and a second substrate, the TFT-LCD panel comprising: a plurality of color filter patterns formed on the first substrate; An insulating film formed on the color filter pattern; A barrier layer formed on the insulating film; It comprises a thin film transistor formed with a gate electrode made of copper on the barrier layer, by increasing the adhesion between the insulating film and the gate electrode of the thin film transistor by forming a barrier layer by oxidizing the insulating film in an atmosphere such as O 2 plasma, In addition, low resistance wiring can be achieved by using copper as the gate electrode material.
BCB, 플라즈마BCB, Plasma
Description
도 1 은 종래 기술에 따른 칼라 필터 기판 위에 박막 트랜지스터가 형성된 LCD 패널의 구조 단면도1 is a cross-sectional view of an LCD panel in which a thin film transistor is formed on a color filter substrate according to the related art.
도 2a 내지 도 2c 는 본 발명에 따라 칼라 필터 기판 위에 박막 트랜지스터(TOC : TFT ON COLOR FILTER)가 형성된 LCD 패널의 제조 공정 단면도2A to 2C are cross-sectional views of a manufacturing process of an LCD panel in which a thin film transistor (TOC: TFT ON COLOR FILTER) is formed on a color filter substrate according to the present invention.
*도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 블랙 메트릭스 2, 3 : 칼라필터층1:
4 : 절연막 5 : 알루미늄4: insulating film 5: aluminum
6 : 몰리브덴 7 : 게이트 절연막6: molybdenum 7: gate insulating film
8 : 반도체층 9 : 오우믹접촉층8: semiconductor layer 9: ohmic contact layer
10 : 소오스 전극 11 : 드레인 전극10
12 : 보호막 13 : 화소전극12: protective film 13: pixel electrode
14 : 베리어층 15 : 구리14: barrier layer 15: copper
본 발명은 칼라 필터 기판 위에 박막 트랜지스터가 형성된 LCD 패널 및 그 제조 방법에 관한 것으로, 특히 칼라 필터 기판과의 높은 접착력 및 저저항을 갖는 게이트 배선 기술을 갖는 LCD 패널 및 그 제조 방법에 관한 것이다.BACKGROUND OF THE
최근 BCB(벤조싸이클로부텐)는 반도체 칩 내부의 층간절연막 재료용, 완충코트용, TFT방식 LCD용 평탄화막용으로 확대 사용되고 있고, 현재 칩 내부에는 주로 알루미늄 배선이 이용되고 있다. Recently, benzocyclobutene (BCB) has been widely used for planarization films for interlayer insulating film materials, buffer coatings, and TFT type LCDs in semiconductor chips, and aluminum wirings are mainly used in chips.
그러나 내(耐) 이동성의 향상, 배선저항을 줄이고자 하는 요구로 알루미늄 배선 대신 구리 프로세스로 대체될 가능성이 있으며 그에 따라 보다 저절연율의 재료가 요구되고 있다. However, in order to improve mobility resistance and reduce wiring resistance, it is possible to replace copper wiring instead of aluminum wiring, and accordingly, a lower insulation material is required.
따라서, 유전율(2.65)이 낮고 고내열(약 350℃)성도 보유한 BCB가 MCM(멀티칩모듈)의 절연재료 등으로 주목받아 왔다. Therefore, BCB, which has a low dielectric constant (2.65) and high heat resistance (about 350 DEG C), has been attracting attention as an insulating material of an MCM (multi-chip module).
도 1 은 종래 기술에 따른 칼라 필터 기판 위에 박막 트랜지스터가 형성된 LCD 패널(TOC : TFT ON COLOR FILTER)의 구조 단면도이다.1 is a structural cross-sectional view of an LCD panel (TOC: TFT ON COLOR FILTER) having a thin film transistor formed on a color filter substrate according to the prior art.
상기 TOC의 공정은 다음과 같이 간략히 나타낼 수 있다.The process of the TOC can be briefly described as follows.
메탈 물질로 블랙 메트릭스(1)를 형성하고, 상기 블랙 메트릭스(1) 사이에 칼라필터층(2)을 형성한다. The
그리고, 칼라필터층(2)의 보호를 위해 칼라필터층(2) 상에 BCB(벤조싸이클로부텐) 등의 절연막(4)을 형성하여 표면을 평탄화한다.In order to protect the
이어 상기 절연막(4) 위에 알루미늄(Al : 5), 몰리브덴(Mo : 6) 등을 차례로 형성하여 이중 구조를 갖는 게이트 전극을 형성하고, 게이트 절연막(7), 반도체층(8), 오우믹접촉층(9), 소오스 전극(10)과 드레인 전극(11), 보호막(12), 화소전극(13)을 형성한다.Subsequently, aluminum (Al: 5), molybdenum (Mo: 6), etc. are sequentially formed on the
종래 기술에 따른 칼라 필터 기판 위에 박막 트랜지스터가 형성된 LCD 패널 및 그 제조 방법은 게이트 전극으로 알루미늄(Al), 몰리브덴(Mo)의 이중 구조 대신 저항이 낮은 구리(Cu)를 사용하기 위해 BCB와 같은 저절연성의 절연막을 사용할 경우 게이트 배선과 절연막간의 접착력이 불량하여 게이트 전극이 절연막 상부에서 벗겨지는 필링(peeling) 현상이 발생한다.The LCD panel in which a thin film transistor is formed on a color filter substrate according to the related art and a method of manufacturing the same have a low resistance such as BCB to use a low resistance copper (Cu) instead of a double structure of aluminum (Al) and molybdenum (Mo) as a gate electrode. When an insulating insulating film is used, a peeling phenomenon occurs in which the gate electrode is peeled off from the upper portion of the insulating film due to poor adhesion between the gate wiring and the insulating film.
따라서 본 발명은 상기와 같은 문제점을 해결하기 위해 안출한 것으로서, 구리로 게이트 전극을 형성 시에 칼라 필터 위에 형성된 절연막과의 접착력을 향상시키는 칼라 필터 기판 위에 박막 트랜지스터가 형성된 LCD 패널 및 그 제조 방법을 제공하는데 그 목적이 있다.Accordingly, the present invention has been made to solve the above problems, an LCD panel formed with a thin film transistor on the color filter substrate to improve the adhesion to the insulating film formed on the color filter when forming the gate electrode of copper and a method of manufacturing the same. The purpose is to provide.
상기와 같은 목적을 달성하기 위한 본 발명에 따른 TFT-LCD 패널의 특징은 제 1 기판과 제 2 기판 사이에 액정이 주입된 TFT-LCD 패널에 있어서, 상기 제 1 기판 상에 형성된 복수의 칼라필터 패턴; 상기 칼라필터 패턴 상에 형성된 절연막; 상기 절연막 상에 형성된 베리어층; 상기 베리어층 상에 구리로 이루어진 게이트 전극을 갖고 형성된 박막 트랜지스터를 포함하여 구성되는데 있다.A TFT-LCD panel according to the present invention for achieving the above object is a TFT-LCD panel in which a liquid crystal is injected between a first substrate and a second substrate, a plurality of color filters formed on the first substrate pattern; An insulating film formed on the color filter pattern; A barrier layer formed on the insulating film; The thin film transistor is formed with a gate electrode made of copper on the barrier layer.
그리고, 상기 베리어층은 절연막으로 이루어지며, 상기 절연막은 BCB(벤조싸이클로부텐) 물질이다. The barrier layer is formed of an insulating film, and the insulating film is a benzocyclobutene (BCB) material.
그리고, 상기 박막 트랜지스터는 상기 베리어층 상에 형성된 게이트 전극; 상기 게이트 전극 상에 형성된 게이트 절연막; 상기 게이트 절연막 상에 형성된 채널층; 상기 채널층 상에 형성된 소스 및 드레인 전극을 포함하여 구성된다.The thin film transistor may include a gate electrode formed on the barrier layer; A gate insulating film formed on the gate electrode; A channel layer formed on the gate insulating layer; And a source and a drain electrode formed on the channel layer.
상기와 같은 목적을 달성하기 위한 본 발명에 따른 TFT-LCD 패널 제조 방법의 특징은 제 1 기판과 제 2 기판 사이에 액정이 주입된 TFT-LCD 패널 제조에 있어서, 상기 제 1 기판 상에 복수의 칼라필터 패턴을 형성하는 단계; 상기 칼라필터 패턴 상에 절연막을 형성하는 단계; 상기 절연막 상에 베리어층을 형성하는 단계; 상기 베리어층 상에 구리로 이루어진 게이트 전극을 갖는 박막 트랜지스터를 형성하는 단계를 포함하여 이루어지는데 있다.A TFT-LCD panel manufacturing method according to the present invention for achieving the above object is a TFT-LCD panel in which a liquid crystal is injected between a first substrate and a second substrate, a plurality of on the first substrate Forming a color filter pattern; Forming an insulating film on the color filter pattern; Forming a barrier layer on the insulating film; And forming a thin film transistor having a gate electrode made of copper on the barrier layer.
그리고, 상기 베리어층은 상기 절연막의 표면을 산화처리하여 형성되고, 상기 산화처리는 O2 플라즈마 분위기에서 실시한다.The barrier layer is formed by oxidizing the surface of the insulating film, and the oxidation is performed in an O 2 plasma atmosphere.
본 발명의 다른 목적, 특성 및 잇점들은 첨부한 도면을 참조한 실시 예들의 상세한 설명을 통해 명백해질 것이다.Other objects, features and advantages of the invention will become apparent from the following detailed description of embodiments taken in conjunction with the accompanying drawings.
본 발명에 따른 칼라 필터 위에 박막 트랜지스터가 형성된 LCD 패널 및 그 제조 방법의 바람직한 실시 예에 대하여 첨부한 도면을 참조하여 설명하면 다음과 같다.Referring to the accompanying drawings, a preferred embodiment of an LCD panel and a method of manufacturing the LCD panel having a thin film transistor formed on a color filter according to the present invention will be described.
도 2a 내지 도 2c 는 본 발명에 따라 칼라 필터 위에 박막 트랜지스터(TOC : TFT ON COLOR FILTER)가 형성된 LCD 패널의 제조 공정 단면도이다. 2A to 2C are cross-sectional views illustrating a manufacturing process of an LCD panel in which a thin film transistor (TOC: TFT ON COLOR FILTER) is formed on a color filter according to the present invention.
상기 TOC의 공정은 다음과 같이 간략히 나타낼 수 있다.The process of the TOC can be briefly described as follows.
먼저, 도 2a 에 도시된 바와 같이 메탈 물질로 블랙 메트릭스(1)를 형성하고, 상기 블랙 메트릭스(1) 사이에 칼라필터층(2, 3)을 형성한 다음 칼라필터층(2, 3)의 보호를 위해 칼라필터층(2, 3)을 포함한 전면에 BCB(벤조싸이클로부텐) 등의 절연막(4)을 형성하여 표면을 평탄화한다.First, as shown in FIG. 2A, the
이어 도 2b 에 도시된 바와 같이 절연막(4) 위에 O2 플라즈마 분위기에서 산화처리하여 SiO2 와 같은 베리어층(14)을 형성한다.Subsequently, as illustrated in FIG. 2B, a
이어 도 2c 에 도시된 바와 같이 박막 트랜지스터를 형성한다. Subsequently, a thin film transistor is formed as shown in FIG. 2C.
상기 박막 트랜지스터 형성과정은 다음과 같다.The thin film transistor formation process is as follows.
먼저, 표면 산화에 의해 형성된 베리어층(14) 위에 구리(Cu)를 스퍼터링 방법으로 적층한 후 감광막 등을 마스크로 이용하여 사진식각 방법으로 패터닝하여 도 2d 에 도시된 바와 같이 게이트 전극(15)을 형성하고 게이트 전극(15)을 덮도록 게이트 절연막(7)을 형성한다.First, copper (Cu) is deposited on the
구리는 게이트 금속으로 Al, Mo 보다 게이트 펄스 전파지연이 줄어들게 되어 전파지연을 개선시키고, 저항이 낮은 장점이 있다.Copper is a gate metal, the gate pulse propagation delay is reduced than Al, Mo to improve the propagation delay, has the advantage of low resistance.
그리고 상기 게이트 전극(15)은 도면에 표시하지 않았지만 게이트 배선과 동시에 형성된다.Although not shown in the figure, the
게이트 절연막(7)은 비정질 질화규소(SiNX_) 또는 SiOX 등을 플라즈마 CVD(plasma chemical vapor deposition)방법에 의해 적층하여 형성한다. The
이어 반도체층(8)을 형성한 다음, 반도체층(8)의 오우믹 접촉(ohmic contact)을 위하여 오우믹접촉층(9)을 형성한다. Subsequently, the
상기 게이트 절연막(7) 위에 형성된 반도체층(8)은 비정질 실리콘(amorphous silicon : a-Si)을 플라즈마 CVD 방법에 의해 적층한다.The
이어 감광막을 마스크로 하여 반도체층(8) 및 오우믹접촉층(9)을 건식식각 등에 의해 선택적으로 식각하여 채널층을 형성한다.Subsequently, the
이어, 메탈 물질층을 형성하고 반도체층(8)의 소정영역이 노출되도록 메탈 물질층 및 오우믹접촉층(9)을 식각하여 소오스 전극(10) 및 드레인 전극(11)을 형성한다.Subsequently, the metal material layer and the ohmic contact layer 9 are etched to form a metal material layer and expose a predetermined region of the
오우믹접촉층(9) 위에 형성된 소오스 전극(10) 및 드레인 전극(11)은 도면에 표시하지 않았지만 데이터 배선과 동시에 형성되는 것으로 Al, Cr, Ti, Al 합금 등의 금속을 스퍼터링 방법으로 적층하고 시진 식각방법 등으로 패터닝하여 형성한다. Although not shown in the drawing, the
이어, 보호막(12)과 화소전극(13)을 형성한다.Next, the
상기 보호막(12)은 SiNX 또는 SiOX 등과 같은 무기물 또는 BCB(benzencyclobutane)와 같은 유기물을 도포하여 형성하며, 드레인 전극(11)의 소정 영역 위에 형성된 보호막(12)을 식각하여 콘택홀을 형성한다. The
상기 화소전극(13)은 ITO(indium tin oxide)와 같은 투명한 전도성 물질을 스퍼터링 방법에 의해 적층하고 사진식각 방법 등으로 패터닝하여 형성한다.
The
그리고 도면에 도시되지 않았지만 칼라 필터 기판 위에 형성된 박막 트랜지스터(TOC)의 상부에 ITO 재질의 공통전극 및 배향막이 형성된 기판이 있고, 상기 기판과 TOC 사이에 액정이 주입되어 있어, 상기 드레인 전극(11)에 연결된 화소전극(13) 및 공통전극에 신호 전압을 인가하여 상기 인가된 신호 전압에 의해 액정이 배향되고, 상기 배향된 액정의 방향에 따라 빛이 투과되어 디스플레이된다. Although not shown in the drawing, there is a substrate on which a common electrode and an alignment layer made of ITO are formed on a thin film transistor (TOC) formed on a color filter substrate, and a liquid crystal is injected between the substrate and the TOC. By applying a signal voltage to the
이상에서 설명한 바와 같은 본 발명에 따라 칼라 필터 위에 박막 트랜지스터를 형성한 구조를 갖는 LCD 패널 및 그 제조 방법은 게이트 전극으로 저항이 낮은 구리를 사용함으로써 저저항화 배선을 실현할 수 있고, 칼라 필터의 평탄화막으로 사용된 절연막 위에 산화처리에 의한 베리어층을 형성함으로써 구리와 절연막과의 접착력을 개선하여 구리의 벗겨짐을 방지할 수 있다.According to the present invention as described above, an LCD panel having a structure in which a thin film transistor is formed on a color filter and a method of manufacturing the same can realize a low resistance wiring by using copper having low resistance as a gate electrode, and flatten the color filter. By forming a barrier layer by an oxidation treatment on the insulating film used as the film, the adhesion between the copper and the insulating film can be improved to prevent the peeling of copper.
이상 설명한 내용을 통해 당업자라면 본 발명의 기술 사상을 이탈하지 아니하는 범위에서 다양한 변경 및 수정이 가능함을 알 수 있을 것이다.Those skilled in the art will appreciate that various changes and modifications can be made without departing from the spirit of the present invention.
따라서, 본 발명의 기술적 범위는 실시예에 기재된 내용으로 한정되는 것이 아니라 특허 청구의 범위에 의하여 정해져야 한다.Therefore, the technical scope of the present invention should not be limited to the contents described in the embodiments, but should be defined by the claims.
Claims (10)
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| KR101214413B1 (en) * | 2009-10-27 | 2012-12-21 | 가부시키가이샤 알박 | Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device |
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| KR101326134B1 (en) * | 2007-02-07 | 2013-11-06 | 삼성디스플레이 주식회사 | Thin film transistor array panel and method for manufacturing the same |
| CN101833200B (en) | 2009-03-13 | 2012-05-30 | 北京京东方光电科技有限公司 | Horizontal electric field type liquid crystal display device and manufacturing method thereof |
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| JPH06214112A (en) * | 1993-01-14 | 1994-08-05 | Nissha Printing Co Ltd | Color filter and its production |
| JPH07140458A (en) * | 1993-11-22 | 1995-06-02 | Rohm Co Ltd | Liquid crystal display device |
| KR19980079508A (en) * | 1997-03-25 | 1998-11-25 | 포맨 제프리 엘 | Thin Film Transistors Fabricated on Plastic Substrates |
| KR20000056517A (en) * | 1999-02-23 | 2000-09-15 | 구본준 | Method for fabricating thin film transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH06214112A (en) * | 1993-01-14 | 1994-08-05 | Nissha Printing Co Ltd | Color filter and its production |
| JPH07140458A (en) * | 1993-11-22 | 1995-06-02 | Rohm Co Ltd | Liquid crystal display device |
| KR19980079508A (en) * | 1997-03-25 | 1998-11-25 | 포맨 제프리 엘 | Thin Film Transistors Fabricated on Plastic Substrates |
| KR20000056517A (en) * | 1999-02-23 | 2000-09-15 | 구본준 | Method for fabricating thin film transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101214413B1 (en) * | 2009-10-27 | 2012-12-21 | 가부시키가이샤 알박 | Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device |
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