KR101308437B1 - Method for manufacturing of liquid crystal display - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method of manufacturing the same. In particular, a liquid crystal display device includes a gate electrode formed on a predetermined region of an insulating substrate, a gate insulating film formed on the entire surface of the substrate including the gate electrode, and a gate over the gate electrode. A semiconductor layer formed on the insulating film, source and drain electrodes formed at regular intervals on both ends of the semiconductor layer and the gate insulating film, a diffusion barrier film formed on upper and lower portions of the source and drain electrodes, and an entire surface of the substrate including the diffusion barrier film. And a pixel electrode having a contact hole on a predetermined portion above the diffusion barrier on the drain electrode, and a pixel electrode electrically connected to the diffusion barrier on the drain electrode through the contact hole.

LCD, Diffusion Barrier, Copper

Description

Manufacturing method of liquid crystal display device {METHOD FOR MANUFACTURING OF LIQUID CRYSTAL DISPLAY}

1 is a plan view showing a general liquid crystal display device

2A through 2F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the related art.

3 is a plan view showing a liquid crystal display device according to the present invention.

4 is a cross-sectional view of a liquid crystal display according to the present invention taken along line II ′ of FIG. 3.

5A to 5F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method for manufacturing the same, and more particularly, to a liquid crystal display device and a method for manufacturing the same, which improve interface properties and lower specific resistance.

As the information society develops, the demand for display devices is increasing in various forms, and in recent years, liquid crystal display devices (LCDs), plasma display panels (PDPs), electro luminescent displays (ELD), and vacuum fluorescent (VFD) Various flat panel display devices such as displays have been studied, and some of them are already used as display devices in various devices.

Among them, LCD is the most widely used as the substitute for CRT (Cathode Ray Tube) for mobile image display device because of its excellent image quality, light weight, thinness, and low power consumption. In addition to the use of the present invention has been developed in various ways such as a monitor of a television and a computer for receiving and displaying broadcast signals.

A general liquid crystal display device may be largely divided into a liquid crystal panel displaying an image and a driving unit for applying a driving signal to the liquid crystal panel, wherein the liquid crystal panel includes first and second glass substrates bonded to each other with a predetermined space; It consists of a liquid crystal layer injected between the said 1st, 2nd glass substrate.

Here, the first glass substrate (TFT array substrate) has a plurality of gate lines arranged in one direction at regular intervals, a plurality of data lines arranged at regular intervals in a direction perpendicular to the gate lines, A plurality of pixel electrodes formed in a matrix form in each pixel region defined by crossing a gate line and a data line, and a plurality of thin film transistors switched by signals of the gate line to transfer the signal of the data line to each pixel electrode. Is formed.

The second glass substrate (color filter array substrate) may include a light shielding layer for blocking light in portions other than the pixel region, an R, G, and B color filter layer for expressing color colors, and an image for realizing an image. The common electrode is formed.

The first and second substrates are bonded to each other by a seal material having a predetermined space by a spacer and having a liquid crystal injection hole to inject liquid crystal between the two substrates.

In the meantime, the thin film transistor uses a semiconductor film as an active layer. The semiconductor film is formed of amorphous silicon or crystalline silicon. The semiconductor film formed of amorphous silicon, which can be produced relatively easily by vapor deposition at low temperature and is suitable for mass production, was most widely used.

However, the thin film transistor including the semiconductor film formed of the crystalline silicon has sufficient driving capability for a large current to realize high speed operation, and allows the peripheral driving circuit of the LCD to be formed integrally with the display portion on the same substrate. For these reasons, thin film transistors containing crystalline silicon are attracting attention today.

1 is a plan view illustrating a general liquid crystal display device.

As shown in FIG. 1, a plurality of gate lines 11 are arranged in one direction at regular intervals to define the pixel region P on the lower substrate 10, and are perpendicular to the gate lines 11. The plurality of data lines 12 are arranged at regular intervals in the direction.

In addition, each pixel region P defined by the crossing of the gate line 11 and the data line 12 is switched by a pixel electrode 16 formed in a matrix form and a signal of the gate line 11. A plurality of thin film transistors which transmit a signal of the data line 12 to the pixel electrodes 16 are formed.

Here, the thin film transistor is formed on the gate electrode 13 protruding from the gate line 11, the gate insulating film (not shown) formed on the front surface, and the gate insulating film above the gate electrode 13. And a source electrode 15a formed to protrude from the data line 12, and a drain electrode 15b formed at regular intervals on the source electrode 15a. .

The drain electrode 15b is electrically connected to the pixel electrode 16 through the contact hole 17.

Meanwhile, the lower substrate 10 configured as described above has a predetermined space and is bonded to the upper substrate (not shown).

In this case, the upper substrate has an opening corresponding to the pixel region P formed in the lower substrate 10, and serves as a light blocking layer, and a red / green / color for implementing color. In addition to the blue (R / G / B) color filter layer and the pixel electrode (reflection electrode) 16, a common electrode for driving a liquid crystal is included.

The lower and upper substrates 10 and 10 have a predetermined space by a spacer and liquid crystal is injected between two substrates bonded by a seal material having a liquid crystal injection hole.

Hereinafter, a manufacturing method of a conventional liquid crystal display device will be described with reference to the accompanying drawings.

2A through 2F are cross-sectional views illustrating a method of manufacturing a conventional liquid crystal display device.

As shown in FIG. 2A, the sputtering method is selected from a metal made of Al, Al-Pd, Al-Si, Al-Si-Ti, Al-Si-Cu, Al alloy, or the like on the transparent glass substrate 41. Thereby depositing a metal film at a thickness of 200 to 4000 kPa.

Subsequently, the metal film is selectively etched through a photo and etching process to form a gate electrode 42 on the glass substrate 41.

Here, when the gate electrode 42 is a metal capable of anodizing, the gate electrode 42 may be anodized to prevent hillock.

As shown in FIG. 2B, a gate insulating film 43 made of a silicon nitride film or a silicon oxide film is formed on the entire surface of the glass substrate 41 including the gate electrode 42.

Subsequently, an amorphous silicon layer (a-Si layer) 44 and an ohmic contact layer (n +) 45 are sequentially formed on the gate insulating layer 43.

Meanwhile, the amorphous silicon layer 44 may be crystallized.

As shown in FIG. 2C, the ohmic contact layer 45 and the amorphous silicon layer 44 are selectively removed through photo and etching processes to form the active layer 44a.

Here, the active layer 44a is formed to cover the gate electrode 42 and surround the gate electrode 42.

As shown in FIG. 2D, a metal film is deposited on the entire surface of the glass substrate 41, and the metal film is selectively removed through a photo and etching process to electrically separate the source electrode 46 and the drain electrode 47. ).

Here, the etching of the metal film to form the source electrode 46 and the drain electrode 47 uses a wet etch process.

In addition, the source electrode 46 and the drain electrode 47 use a conductive metal film such as aluminum (Al), chromium (Cr), or molybdenum (Mo).

The ohmic contact layer 45 exposed between the source electrode 46 and the drain electrode 47 is selectively removed by dry etching.

In this case, when the ohmic contact layer 45 is removed, the active layer 44a beneath it is also removed by a predetermined thickness. That is, when the ohmic contact layer 45 is removed, damage is applied to the active layer 44a.

As shown in FIG. 2E, a protective film 48 is formed on the entire surface of the glass substrate 41 including the source electrode 46 and the drain electrode 47, and the surface of the drain electrode 47 is exposed to a predetermined portion. The protective layer 48 is selectively removed to form the contact hole 49.

As shown in FIG. 2F, a transparent metal film is deposited on the entire surface of the glass substrate 41 including the contact hole 49, and then selectively removed through the contact hole to remove the metal film through photo and etching processes. The pixel electrode 50 is electrically connected to the drain electrode 47.

However, the liquid crystal display and its manufacturing method according to the prior art have the following problems.

Recently, due to the development of integration technology, the resistance increases as the line width of the data line decreases. Therefore, copper, silver, gold, and the like having low specific resistance are used as the wiring material. At this time, there is a problem in that copper or the like is diffused to the other layers.

The present invention is to solve the conventional problems as described above, the liquid crystal to improve the interfacial properties and lower the resistivity by forming a diffusion barrier film by depositing a plurality of alloy layers in sequence by varying the ratio of copper and aluminum to heat treatment. It is an object of the present invention to provide a display device and a method of manufacturing the same.

The liquid crystal display according to the present invention according to the above object is formed on a gate electrode formed on a predetermined region of an insulating substrate, a gate insulating film formed on the front surface of the substrate including the gate electrode, formed on the gate insulating film on the gate electrode Source and drain electrodes formed on the semiconductor layer, both ends of the semiconductor layer, and on the gate insulating layer at regular intervals, a diffusion barrier layer formed on upper and lower portions of the source and drain electrodes, and an entire surface of the substrate including the diffusion barrier layer; And a pixel electrode electrically connected to the diffusion barrier layer on the drain electrode through the contact hole.

According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, including forming a gate electrode in a predetermined region on an insulating substrate, forming a gate insulating film on the entire surface of the substrate including the gate electrode, Forming a semiconductor layer on the gate insulating layer, and sequentially depositing a first alloy layer, a second alloy layer, and a third alloy layer by different ratios of the first metal and the second metal on the entire surface of the substrate including the semiconductor layer; In the step, the first, second and third alloy layer is selectively etched, etched and heat treated to form a diffusion barrier layer on the top and bottom of the source / drain electrode and the source / drain electrode so as to have a predetermined gap at both ends of the semiconductor layer. Forming a passivation layer on the entire surface of the substrate including the diffusion barrier layer; It characterized in that there is a minute to yirueojim and forming a pixel electrode connected to the diffusion preventing film and the drain electrode of electrically top forming a contact hole in the passivation layer, through the contact hole exposure.

Hereinafter, a liquid crystal display and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

3 and 4 illustrate one embodiment of the present invention. FIG. 3 is a plan view showing a liquid crystal display according to the present invention, and FIG. 4 shows a liquid crystal display according to the present invention taken along line II ′ of FIG. 3. It is sectional drawing to show.

3 and 4, the liquid crystal display according to the present invention, the gate line 111 formed in one direction at regular intervals on the insulating substrate 110 of a transparent material and the gate electrode 111a protruding therefrom ), A gate insulating layer 112 formed on the entire surface of the substrate 110 including the gate electrode 111a, a semiconductor layer 113 formed on the gate insulating layer 112 on the gate electrode 111a, and the semiconductor. The semiconductor is formed on both side ends of the layer 113 and the gate insulating layer 112 in a direction perpendicular to the gate line 111 to protrude from the data line 114 and the data line 114 to define a pixel area. The source electrode 114a formed to overlap one end of the layer 113 and the drain electrodes 114a and 115 formed to overlap the other end of the semiconductor layer 113 at regular intervals from the source electrode 114a. Before the source and drain (114a, 115) is formed on the entire surface of the substrate 110 including the diffusion barrier 125, the diffusion barrier 125 formed on the upper and lower portions, and contacts the upper portion of the diffusion barrier 125, the upper portion of the drain electrode 115 The passivation layer 117 includes a hole and a pixel electrode 118 electrically connected to the diffusion barrier 125 on the drain electrode 115 through the contact hole.

The source electrode 114a and the drain electrode 115 are formed of any one of metal materials such as copper (Cu), aluminum (Al), silver (Ag), and gold (Au).

In addition, the diffusion barrier 125 is made of aluminum (Al), magnesium (Mg), calcium (Ca), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), palladium (Pd), indium (In), hafnium (Hf), tantalum (Ta), and tungsten (W).

5A through 5E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to an exemplary embodiment of the present invention.

First, a method of manufacturing a liquid crystal display device according to an exemplary embodiment of the present invention may include copper (Cu), aluminum (Al), aluminum alloy (AlNd), and molybdenum on a transparent glass substrate 110 as shown in FIG. 5A. Low-resistance metal materials, such as Mo) and chromium (Cr), are deposited at least one or more layers.

Subsequently, the metal material is selectively patterned through a photo and etching process to form a gate line (not shown) and a gate electrode 111a branching from the gate line. Subsequently, an insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx) is deposited on the entire surface of the substrate 110 including the gate electrode 111a to form the gate insulating layer 112.

As shown in FIG. 5B, a pure amorphous silicon layer 113a and an amorphous silicon layer 113b containing impurities are sequentially stacked on the entire surface of the gate insulating layer 112, and the pure amorphous silicon is formed through a photo and etching process. The semiconductor layer 113 is formed on the gate insulating layer 112 on the gate electrode 111a by selectively removing the layer 113a and the amorphous silicon layer 113b including impurities.

As shown in FIG. 5C, a copper (Cu) -aluminum (Al) alloy layer is deposited on the entire surface of the substrate 110 including the semiconductor layer 113 by a sputtering method.

Here, the deposition of the copper (Cu) -aluminum (Al) alloy layer by adjusting the power (power) is deposited in three layers so that the ratio of copper and aluminum is different. In other words, the first alloy layer 120 is laminated to have a power of 500 eV so that the ratio of copper and aluminum is 1: 1, and the second alloy layer has a power of 100 eV so that the ratio of copper and aluminum is 5: 1. The third alloy layer 122 is deposited so that the 121 is laminated and the power is 500 eV so that the ratio of copper and aluminum is 1: 1.

As shown in FIG. 5D, the first, second, and third alloy layers 120, 121, and 122 are selectively removed through a photo-etching process to be perpendicular to the gate line on one side of the semiconductor layer 113. The data line 114 defining the pixel region, the source electrode 114a protruding therefrom, the drain electrode 115 and the data line at regular intervals from the source electrode 114a on the other side of the semiconductor layer 113. The diffusion barrier film 125 is formed above and below the 114, source electrode 114a, and drain electrode 115.

Subsequently, the insulating substrate 110 on which the source and drain electrodes 114a and 115 are formed is heat-treated at a predetermined temperature.

Here, the heat treatment may be performed for 10 minutes at 200 ~ 400 ℃ in oxygen (O ₂ ) atmosphere to diffuse aluminum.

At this time, copper (Cu) constitutes a data line 114, a source electrode 114a, a drain electrode 115, and aluminum (Al) is combined with oxygen to form aluminum oxide (Al ₂ O ₃ ) to prevent the diffusion film ( 125).

As illustrated in FIG. 5E, SiNx and SiO ₂ , which are inorganic materials, are deposited on the entire surface of the substrate 110 including the diffusion barrier 125 by chemical vapor deposition. The protective film 117 is formed by application.

As illustrated in FIG. 5F, the protective layer 117 is selectively etched to expose a predetermined portion of the surface of the drain electrode 115 to form a contact hole.

Next, a transparent metal such as indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited on the entire surface of the substrate 110 including the contact hole, and the pattern is selectively patterned through the photo and etching process to contact the contact. The pixel electrode 118 is electrically connected to the drain electrode 115 through a hole.

As the material of the data line 114, the source electrode 114a, and the drain electrode 115, aluminum (Al), silver (Ag), gold (Au), or the like may be used instead of copper (Cu).

In addition, magnesium (Mg), calcium (Ca), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), zinc (Zn), instead of aluminum (Al) as a material of the diffusion barrier 125 Zirconium (Zr), niobium (Nb), molybdenum (Mo), palladium (Pd), indium (In), hafnium (Hf), tantalum (Ta), tungsten (W) and the like can be used.

The present invention uses copper (Cu) as a material for the data line 114, the source electrode 114a, and the drain electrode 115, and oxidizes the diffusion barrier 125 to prevent diffusion of the copper into another layer. Although aluminum (Al ₂ O ₃ ) is used, the present invention is not limited thereto, and may also be applied to the gate line 111 and the gate electrode 111a, which is naturally within the protection scope of the present invention.

On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is a technology that the various permutations, modifications and changes that can be made within the scope without departing from the spirit of the present invention It will be apparent to those of ordinary skill in the art.

The liquid crystal display device and the manufacturing method thereof according to the present invention described above have the following effects.

That is, when the alloy layer is deposited in order to form the metal wiring and the diffusion barrier layer, the metal layer may be formed by changing the ratio of metal and depositing the inside of the alloy layer with a low specific resistance and the outside with a diffusion barrier layer.

In addition, by depositing in the above manner it can form a diffusion barrier in a shorter time at a lower temperature than conventional processes during heat treatment.

Claims (10)

delete delete delete Forming a gate electrode in a predetermined region on the insulating substrate; Forming a gate insulating film on an entire surface of the substrate including the gate electrode; Forming a semiconductor layer on the gate insulating film on the gate electrode; Depositing a first alloy layer, a second alloy layer, and a third alloy layer in sequence with different ratios of the first metal and the second metal on the entire surface of the substrate including the semiconductor layer; Selectively etching, etching, and heat-treating the first, second, and third alloy layers to form a diffusion barrier layer on upper and lower portions of the source / drain electrodes and the source / drain electrodes so as to have a predetermined gap at both ends of the semiconductor layer. ; Forming a protective film on the entire surface of the substrate including the diffusion barrier film; Forming a contact hole in the passivation layer to expose a portion of the diffusion barrier layer on the drain electrode; And forming a pixel electrode electrically connected to the diffusion barrier layer on the drain electrode through the contact hole. 5. The method of claim 4, The heat treatment is performed for 10 minutes at 200 ℃ to 400 ℃ manufacturing method of the liquid crystal display device. 5. The method of claim 4, The heat treatment is a manufacturing method of the liquid crystal display device, characterized in that in the O ₂ atmosphere. 5. The method of claim 4, The first metal is aluminum (Al), magnesium (Mg), calcium (Ca), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), zinc (Zn), zirconium (Zr), Niobium (Nb), molybdenum (Mo), palladium (Pd), indium (In), hafnium (Hf), tantalum (Ta), tungsten (W) method of manufacturing a liquid crystal display device. 5. The method of claim 4, The second metal is any one of copper (Cu), aluminum (Al), silver (Ag), gold (Au) manufacturing method of a liquid crystal display device. 5. The method of claim 4, And the ratio of the first metal and the second metal is the same in the first alloy layer and the third alloy layer. 5. The method of claim 4, The first metal is aluminum (Al), the second metal is copper (Cu), and the ratio of the first metal to the second metal is 1: 5 in the first alloy layer and the third alloy layer, and the second alloy layer. 1: 1, the manufacturing method of the liquid crystal display device.

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