KR100632196B1 - 패턴 형성방법 - Google Patents

패턴 형성방법 Download PDF

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Publication number
KR100632196B1
KR100632196B1 KR1019997011568A KR19997011568A KR100632196B1 KR 100632196 B1 KR100632196 B1 KR 100632196B1 KR 1019997011568 A KR1019997011568 A KR 1019997011568A KR 19997011568 A KR19997011568 A KR 19997011568A KR 100632196 B1 KR100632196 B1 KR 100632196B1
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KR
South Korea
Prior art keywords
film
photosensitive material
pattern
etched
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019997011568A
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English (en)
Korean (ko)
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KR20010013561A (ko
Inventor
시모무라고지
기노시타요시아키
후나토사토루
야마구치유코
Original Assignee
에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
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Application filed by 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 filed Critical 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Publication of KR20010013561A publication Critical patent/KR20010013561A/ko
Application granted granted Critical
Publication of KR100632196B1 publication Critical patent/KR100632196B1/ko
Assigned to 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 reassignment 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019997011568A 1998-04-08 1999-04-05 패턴 형성방법 Expired - Lifetime KR100632196B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP98-95681 1998-04-08
JP09568198A JP3955385B2 (ja) 1998-04-08 1998-04-08 パターン形成方法
PCT/JP1999/001792 WO1999053378A1 (fr) 1998-04-08 1999-04-05 Procede de formation de motif

Publications (2)

Publication Number Publication Date
KR20010013561A KR20010013561A (ko) 2001-02-26
KR100632196B1 true KR100632196B1 (ko) 2006-10-11

Family

ID=14144250

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997011568A Expired - Lifetime KR100632196B1 (ko) 1998-04-08 1999-04-05 패턴 형성방법

Country Status (8)

Country Link
US (1) US6527966B1 (https=)
EP (1) EP0989460B1 (https=)
JP (1) JP3955385B2 (https=)
KR (1) KR100632196B1 (https=)
CN (2) CN1273865C (https=)
DE (1) DE69942409D1 (https=)
TW (1) TWI227812B (https=)
WO (1) WO1999053378A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
JP4272805B2 (ja) * 1999-12-27 2009-06-03 富士フイルム株式会社 ポジ型感放射線性組成物
JP4562240B2 (ja) * 2000-05-10 2010-10-13 富士フイルム株式会社 ポジ型感放射線性組成物及びそれを用いたパターン形成方法
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
US6605394B2 (en) 2001-05-03 2003-08-12 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
US6703169B2 (en) 2001-07-23 2004-03-09 Applied Materials, Inc. Method of preparing optically imaged high performance photomasks
US6760153B2 (en) * 2001-11-26 2004-07-06 Nortel Networks Limited Optical component with signal amplification
JP4080784B2 (ja) * 2002-04-26 2008-04-23 東京応化工業株式会社 レジスト用現像液及びそれを用いたレジストパターン形成方法、並びにレジスト用現像原液
US7270931B2 (en) * 2003-10-06 2007-09-18 International Business Machines Corporation Silicon-containing compositions for spin-on ARC/hardmask materials
US7144820B2 (en) * 2004-01-02 2006-12-05 Infineon Technologies Ag Method of manufacturing a layer sequence and a method of manufacturing an integrated circuit
JP4524199B2 (ja) * 2004-02-16 2010-08-11 富士フイルム株式会社 液浸プロセス用化学増幅型レジスト組成物及びそれを用いたパターン形成方法
CN100361275C (zh) * 2004-10-12 2008-01-09 联华电子股份有限公司 蚀刻工艺以及图案化工艺
WO2006101458A1 (en) * 2005-03-22 2006-09-28 National University Of Singapore Method for patterning ferrelectric/piezoelectric films
FR2899502B1 (fr) * 2006-04-06 2009-04-10 Macdermid Printing Solutions E Dispositif de gaufrage, tel qu'un cylindre ou manchon
US8367303B2 (en) * 2006-07-14 2013-02-05 Micron Technology, Inc. Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control
JP5176902B2 (ja) * 2008-11-21 2013-04-03 富士通セミコンダクター株式会社 電子デバイスの製造方法及び設定装置
JP5561192B2 (ja) * 2010-02-26 2014-07-30 信越化学工業株式会社 高分子化合物及びこれを用いた化学増幅ポジ型レジスト組成物並びにパターン形成方法
US9105587B2 (en) 2012-11-08 2015-08-11 Micron Technology, Inc. Methods of forming semiconductor structures with sulfur dioxide etch chemistries
CN112162469B (zh) * 2020-10-22 2021-06-08 南京晶驱集成电路有限公司 一种光刻图形的仿真方法及仿真系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08123032A (ja) * 1994-09-02 1996-05-17 Wako Pure Chem Ind Ltd レジスト材料及びこれを用いたパターン形成方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2919142B2 (ja) * 1990-12-27 1999-07-12 株式会社東芝 感光性組成物およびそれを用いたパターン形成方法
JPH06333817A (ja) * 1993-05-24 1994-12-02 Matsushita Electric Ind Co Ltd 微細パターン形成方法
JPH07226396A (ja) * 1994-02-10 1995-08-22 Sony Corp パターン形成方法
US5663035A (en) * 1994-04-13 1997-09-02 Hoechst Japan Limited Radiation-sensitive mixture comprising a basic iodonium compound
US5736296A (en) * 1994-04-25 1998-04-07 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound
JP2964874B2 (ja) * 1994-06-10 1999-10-18 信越化学工業株式会社 化学増幅ポジ型レジスト材料
US5558971A (en) 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
US5879856A (en) * 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
DE69628996T2 (de) 1995-12-21 2004-04-22 Wako Pure Chemical Industries, Ltd. Polymerzusammensetzung und Rezistmaterial
JP3125678B2 (ja) * 1996-04-08 2001-01-22 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP3482069B2 (ja) 1996-04-30 2003-12-22 松下電器産業株式会社 有機膜のエッチング方法
JP3679206B2 (ja) * 1996-09-20 2005-08-03 東京応化工業株式会社 ポジ型レジスト組成物、それを用いた多層レジスト材料及びレジストパターン形成方法
US6187504B1 (en) * 1996-12-19 2001-02-13 Jsr Corporation Radiation sensitive resin composition
US6187688B1 (en) * 1997-01-21 2001-02-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
US6103447A (en) * 1998-02-25 2000-08-15 International Business Machines Corp. Approach to formulating irradiation sensitive positive resists
US6001538A (en) * 1998-04-06 1999-12-14 Taiwan Semiconductor Manufacturing Company Ltd. Damage free passivation layer etching process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08123032A (ja) * 1994-09-02 1996-05-17 Wako Pure Chem Ind Ltd レジスト材料及びこれを用いたパターン形成方法

Also Published As

Publication number Publication date
CN1811600A (zh) 2006-08-02
TWI227812B (en) 2005-02-11
EP0989460A1 (en) 2000-03-29
CN100476594C (zh) 2009-04-08
CN1273865C (zh) 2006-09-06
JPH11295888A (ja) 1999-10-29
US6527966B1 (en) 2003-03-04
DE69942409D1 (https=) 2010-07-08
JP3955385B2 (ja) 2007-08-08
CN1263611A (zh) 2000-08-16
EP0989460A4 (en) 2001-10-24
KR20010013561A (ko) 2001-02-26
EP0989460B1 (en) 2010-05-26
WO1999053378A1 (fr) 1999-10-21

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