KR100630542B1 - 온도 변화에 따른 전압 보상이 가능한 기준 전압 발생기 - Google Patents
온도 변화에 따른 전압 보상이 가능한 기준 전압 발생기 Download PDFInfo
- Publication number
- KR100630542B1 KR100630542B1 KR1020000071515A KR20000071515A KR100630542B1 KR 100630542 B1 KR100630542 B1 KR 100630542B1 KR 1020000071515 A KR1020000071515 A KR 1020000071515A KR 20000071515 A KR20000071515 A KR 20000071515A KR 100630542 B1 KR100630542 B1 KR 100630542B1
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- South Korea
- Prior art keywords
- voltage
- temperature
- generating
- potential
- sense amplifier
- Prior art date
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
Description
Claims (2)
- 전원 전압의 변화에 무관하게 일정한 전압으로 제 1 전압을 생성하는 기준 전압 발생부,인가된 전압을 온도에 따라 저항값이 변화하는 온도 센싱 소자 및 일반 저항 소자를 이용해 전압 분배하여 제 2 전압을 생성하는 전압 분배부 및상기 제 1 전압을 제 1 입력 신호로 하고, 출력 신호로 생성된 제 3 전압을 상기 전압 분배부에 인가하여 생성된 상기 제 2 전압을 제 2 입력 신호로 피드백함으로써 온도의 변화에 무관하게 상기 제 1 전압을 일정한 전압으로 조절한 제 4 전압을 생성하는 레귤레이션 센스 앰프를 포함하여 이루어지는 것을 특징으로 하는 온도 변화에 따른 전압 보상이 가능한 기준 전압 발생기.
- 제 1 항에 있어서,상기 제 2 전압은 아래의 식에 의해 전압 분배되어 생성되는 것을 특징으로 하는 온도 변화에 따른 전압 보상이 가능한 기준 전압 발생기.제 2 전압 = 제 3 전압 × ( 온도 센싱 소자의 저항값 / ( 일반 저항 소자 + 온도 센싱 소자의 저항값 ) )
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000071515A KR100630542B1 (ko) | 2000-11-29 | 2000-11-29 | 온도 변화에 따른 전압 보상이 가능한 기준 전압 발생기 |
US09/994,752 US6486646B2 (en) | 2000-11-29 | 2001-11-28 | Apparatus for generating constant reference voltage signal regardless of temperature change |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000071515A KR100630542B1 (ko) | 2000-11-29 | 2000-11-29 | 온도 변화에 따른 전압 보상이 가능한 기준 전압 발생기 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020041876A KR20020041876A (ko) | 2002-06-05 |
KR100630542B1 true KR100630542B1 (ko) | 2006-09-29 |
Family
ID=19702154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000071515A KR100630542B1 (ko) | 2000-11-29 | 2000-11-29 | 온도 변화에 따른 전압 보상이 가능한 기준 전압 발생기 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6486646B2 (ko) |
KR (1) | KR100630542B1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6885243B2 (en) * | 2003-06-02 | 2005-04-26 | Standard Microsystems Corporation | Dynamic, digitally controlled, temperature compensated voltage reference |
KR100975973B1 (ko) * | 2003-07-16 | 2010-08-13 | 매그나칩 반도체 유한회사 | 온도에 따라 변화하는 전압을 얻을 수 있는 전압 분배기 제조 방법 |
KR101224919B1 (ko) | 2006-02-07 | 2013-01-22 | 삼성전자주식회사 | 온도 변화에 따라 고전압 발생 회로의 출력 전압 레벨을조절하는 반도체 메모리 장치 |
KR101358930B1 (ko) | 2007-07-23 | 2014-02-05 | 삼성전자주식회사 | 전압 디바이더 및 이를 포함하는 내부 전원 전압 발생 회로 |
JP2011210348A (ja) * | 2010-03-11 | 2011-10-20 | Sony Corp | 制御電圧生成回路及びそれを備えた不揮発性記憶装置 |
KR101332102B1 (ko) * | 2012-05-14 | 2013-11-21 | 삼성전기주식회사 | 가변전원의 온도보상 전원전압 출력회로 및 그 방법 |
CN103823501B (zh) * | 2012-11-19 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | 对基准电流的温度系数进行补偿的电路 |
KR102111494B1 (ko) * | 2013-09-02 | 2020-06-09 | 삼성전자주식회사 | 온도에 따른 교정 기능을 가지는 온도 센서, 이의 동작 방법 및 상기 온도 센서를 포함하는 장치 |
KR20210120237A (ko) * | 2020-03-26 | 2021-10-07 | 에스케이하이닉스 주식회사 | 신호 생성기 및 이를 포함하는 메모리 장치 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4633165A (en) * | 1984-08-15 | 1986-12-30 | Precision Monolithics, Inc. | Temperature compensated voltage reference |
US5917311A (en) * | 1998-02-23 | 1999-06-29 | Analog Devices, Inc. | Trimmable voltage regulator feedback network |
US6218822B1 (en) * | 1999-10-13 | 2001-04-17 | National Semiconductor Corporation | CMOS voltage reference with post-assembly curvature trim |
US6211661B1 (en) * | 2000-04-14 | 2001-04-03 | International Business Machines Corporation | Tunable constant current source with temperature and power supply compensation |
-
2000
- 2000-11-29 KR KR1020000071515A patent/KR100630542B1/ko active IP Right Grant
-
2001
- 2001-11-28 US US09/994,752 patent/US6486646B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020070722A1 (en) | 2002-06-13 |
US6486646B2 (en) | 2002-11-26 |
KR20020041876A (ko) | 2002-06-05 |
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