KR100627212B1 - 자기 센서를 제조하기 위한 방법, 그 방법에 이용되는 자석어레이, 및 자석 어레이를 제조하기 위한 방법 - Google Patents

자기 센서를 제조하기 위한 방법, 그 방법에 이용되는 자석어레이, 및 자석 어레이를 제조하기 위한 방법 Download PDF

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KR100627212B1
KR100627212B1 KR1020050020492A KR20050020492A KR100627212B1 KR 100627212 B1 KR100627212 B1 KR 100627212B1 KR 1020050020492 A KR1020050020492 A KR 1020050020492A KR 20050020492 A KR20050020492 A KR 20050020492A KR 100627212 B1 KR100627212 B1 KR 100627212B1
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yoke
square
film
axis
permanent magnets
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Korean (ko)
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KR20060043874A (ko
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도시유끼 오오하시
고끼찌 아이소
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야마하 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
KR1020050020492A 2004-03-12 2005-03-11 자기 센서를 제조하기 위한 방법, 그 방법에 이용되는 자석어레이, 및 자석 어레이를 제조하기 위한 방법 Expired - Fee Related KR100627212B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00070927 2004-03-12
JP2004070927A JP4557134B2 (ja) 2004-03-12 2004-03-12 磁気センサの製造方法、同磁気センサの製造方法に使用されるマグネットアレイ及び同マグネットアレイの製造方法

Publications (2)

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KR20060043874A KR20060043874A (ko) 2006-05-15
KR100627212B1 true KR100627212B1 (ko) 2006-09-25

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KR1020050020492A Expired - Fee Related KR100627212B1 (ko) 2004-03-12 2005-03-11 자기 센서를 제조하기 위한 방법, 그 방법에 이용되는 자석어레이, 및 자석 어레이를 제조하기 위한 방법

Country Status (7)

Country Link
US (1) US7023310B2 (enExample)
EP (1) EP1574870A3 (enExample)
JP (1) JP4557134B2 (enExample)
KR (1) KR100627212B1 (enExample)
CN (2) CN2791885Y (enExample)
HK (1) HK1080605B (enExample)
TW (1) TWI293372B (enExample)

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US7965077B2 (en) * 2008-05-08 2011-06-21 Everspin Technologies, Inc. Two-axis magnetic field sensor with multiple pinning directions
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CN102298124B (zh) * 2011-03-03 2013-10-02 江苏多维科技有限公司 一种独立封装的桥式磁场角度传感器
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CN102331564B (zh) * 2011-04-06 2013-02-13 江苏多维科技有限公司 单一芯片桥式磁场传感器及其制备方法
CN102435963B (zh) * 2011-04-06 2014-06-04 江苏多维科技有限公司 单片双轴桥式磁场传感器
CN202013413U (zh) * 2011-04-06 2011-10-19 江苏多维科技有限公司 单一芯片桥式磁场传感器
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WO2015010105A1 (en) * 2013-07-19 2015-01-22 Invensense, Inc. Application specific integrated circuit with integrated magnetic sensor
US9513347B2 (en) * 2013-10-31 2016-12-06 Invensense, Inc. Device with magnetic sensors with permanent magnets
TWI633321B (zh) * 2015-03-30 2018-08-21 財團法人工業技術研究院 用於磁場感測之穿隧磁阻裝置
EP3104187A1 (en) * 2015-06-09 2016-12-14 International Iberian Nanotechnology Laboratory Magnetoresistive sensor
JP6554553B2 (ja) * 2015-12-03 2019-07-31 アルプスアルパイン株式会社 磁気検知装置
US11237227B2 (en) * 2017-04-25 2022-02-01 Konica Minolta, Inc. Magnetic sensor
JP6605570B2 (ja) * 2017-12-27 2019-11-13 Ｔｄｋ株式会社 磁気センサ
JP6978517B2 (ja) * 2018-01-17 2021-12-08 アルプスアルパイン株式会社 磁気検出装置およびその製造方法
US10666251B2 (en) * 2018-02-14 2020-05-26 General Equipment And Manufacturing Company, Inc. Target magnet mechanism for proximity switch
US11215681B2 (en) * 2019-07-10 2022-01-04 Allegro Microsystems, Llc Magnetic field sensor with stray field immunity and large air gap performance
CN110568385B (zh) * 2019-08-02 2021-03-30 潍坊歌尔微电子有限公司 一种磁传感器的制造方法及磁传感器
JP7285745B2 (ja) * 2019-09-18 2023-06-02 東京エレクトロン株式会社 成膜システム、磁化特性測定装置、および成膜方法
JP7532774B2 (ja) * 2019-12-26 2024-08-14 株式会社レゾナック 磁気センサ
CN113391116B (zh) * 2021-03-17 2022-11-25 清华大学 一种用于测量母线电流的传感器阵列
CN114089232B (zh) * 2021-11-25 2022-08-09 西安电子科技大学 一种磁场传感器及磁场测量方法
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Also Published As

Publication number Publication date
EP1574870A2 (en) 2005-09-14
JP2005260064A (ja) 2005-09-22
KR20060043874A (ko) 2006-05-15
US20050200449A1 (en) 2005-09-15
HK1080605A1 (zh) 2006-04-28
EP1574870A3 (en) 2010-03-03
CN2791885Y (zh) 2006-06-28
CN1694277A (zh) 2005-11-09
JP4557134B2 (ja) 2010-10-06
CN100536188C (zh) 2009-09-02
TW200604552A (en) 2006-02-01
US7023310B2 (en) 2006-04-04
HK1080605B (zh) 2009-12-31
TWI293372B (en) 2008-02-11

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