TWI293372B - Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array - Google Patents
Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array Download PDFInfo
- Publication number
- TWI293372B TWI293372B TW094107366A TW94107366A TWI293372B TW I293372 B TWI293372 B TW I293372B TW 094107366 A TW094107366 A TW 094107366A TW 94107366 A TW94107366 A TW 94107366A TW I293372 B TWI293372 B TW I293372B
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic
- square
- film
- array
- layer
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 411
- 238000000034 method Methods 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 79
- 230000005415 magnetization Effects 0.000 claims description 69
- 230000005294 ferromagnetic effect Effects 0.000 claims description 49
- 230000035515 penetration Effects 0.000 claims description 27
- 125000006850 spacer group Chemical group 0.000 claims description 26
- 230000008878 coupling Effects 0.000 claims description 17
- 238000010168 coupling process Methods 0.000 claims description 17
- 238000005859 coupling reaction Methods 0.000 claims description 17
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 11
- 239000000696 magnetic material Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- 239000002885 antiferromagnetic material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 138
- 235000012431 wafers Nutrition 0.000 description 59
- 238000010586 diagram Methods 0.000 description 18
- 230000035945 sensitivity Effects 0.000 description 16
- 230000008859 change Effects 0.000 description 12
- 238000000137 annealing Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910003321 CoFe Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005290 antiferromagnetic effect Effects 0.000 description 4
- 239000013256 coordination polymer Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000013598 vector Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- JLQUFIHWVLZVTJ-UHFFFAOYSA-N carbosulfan Chemical compound CCCCN(CCCC)SN(C)C(=O)OC1=CC=CC2=C1OC(C)(C)C2 JLQUFIHWVLZVTJ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009956 embroidering Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004070927A JP4557134B2 (ja) | 2004-03-12 | 2004-03-12 | 磁気センサの製造方法、同磁気センサの製造方法に使用されるマグネットアレイ及び同マグネットアレイの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200604552A TW200604552A (en) | 2006-02-01 |
| TWI293372B true TWI293372B (en) | 2008-02-11 |
Family
ID=34824631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094107366A TWI293372B (en) | 2004-03-12 | 2005-03-10 | Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7023310B2 (enExample) |
| EP (1) | EP1574870A3 (enExample) |
| JP (1) | JP4557134B2 (enExample) |
| KR (1) | KR100627212B1 (enExample) |
| CN (2) | CN2791885Y (enExample) |
| HK (1) | HK1080605B (enExample) |
| TW (1) | TWI293372B (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI278650B (en) * | 2004-09-28 | 2007-04-11 | Yamaha Corp | Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same |
| JP2006276983A (ja) * | 2005-03-28 | 2006-10-12 | Yamaha Corp | ポインティングデバイス用の磁気センサ |
| DE102005060713B4 (de) * | 2005-12-19 | 2019-01-24 | Austriamicrosystems Ag | Magnetfeldsensoranordnung und Verfahren zur berührungslosen Messung eines Magnetfeldes |
| DE602007010852D1 (de) | 2006-03-03 | 2011-01-13 | Ricoh Co Ltd | Element mit magnetoresistivem Effekt und Herstellungsverfahren dafür |
| WO2008012959A1 (en) * | 2006-07-26 | 2008-01-31 | Alps Electric Co., Ltd. | Magnetic sensor |
| KR101021257B1 (ko) * | 2006-08-31 | 2011-03-11 | 알프스 덴키 가부시키가이샤 | 쌍극 대응형 자기검출장치 |
| WO2008114615A1 (ja) * | 2007-03-20 | 2008-09-25 | Alps Electric Co., Ltd. | 磁気抵抗効果素子を用いた位置検知装置 |
| JP2008270471A (ja) | 2007-04-19 | 2008-11-06 | Yamaha Corp | 磁気センサ及びその製造方法 |
| JP5152495B2 (ja) | 2008-03-18 | 2013-02-27 | 株式会社リコー | 磁気センサーおよび携帯情報端末装置 |
| KR101446334B1 (ko) * | 2008-05-07 | 2014-10-01 | 삼성전자주식회사 | 자기 저항 소자 |
| US7965077B2 (en) * | 2008-05-08 | 2011-06-21 | Everspin Technologies, Inc. | Two-axis magnetic field sensor with multiple pinning directions |
| KR101766899B1 (ko) | 2010-04-21 | 2017-08-10 | 삼성전자주식회사 | 자기 메모리 소자 |
| US8907436B2 (en) * | 2010-08-24 | 2014-12-09 | Samsung Electronics Co., Ltd. | Magnetic devices having perpendicular magnetic tunnel junction |
| CN102297652B (zh) * | 2011-03-03 | 2012-12-05 | 江苏多维科技有限公司 | 一种独立封装的磁电阻角度传感器 |
| CN102298124B (zh) * | 2011-03-03 | 2013-10-02 | 江苏多维科技有限公司 | 一种独立封装的桥式磁场角度传感器 |
| CN102226835A (zh) * | 2011-04-06 | 2011-10-26 | 江苏多维科技有限公司 | 单一芯片双轴磁场传感器及其制备方法 |
| CN102331564B (zh) * | 2011-04-06 | 2013-02-13 | 江苏多维科技有限公司 | 单一芯片桥式磁场传感器及其制备方法 |
| CN102435963B (zh) * | 2011-04-06 | 2014-06-04 | 江苏多维科技有限公司 | 单片双轴桥式磁场传感器 |
| CN202013413U (zh) * | 2011-04-06 | 2011-10-19 | 江苏多维科技有限公司 | 单一芯片桥式磁场传感器 |
| CN102790613B (zh) * | 2011-05-16 | 2015-04-29 | 江苏多维科技有限公司 | 一种开关传感器 |
| JP5535139B2 (ja) * | 2011-06-30 | 2014-07-02 | 株式会社ヴァレオジャパン | 近接センサ |
| JP5866956B2 (ja) * | 2011-10-17 | 2016-02-24 | 株式会社デンソー | 磁気センサ |
| RU2014135402A (ru) | 2012-01-30 | 2016-03-27 | Мицубиси Электрик Корпорейшн | Магнитная цепь |
| US9880232B2 (en) * | 2012-03-14 | 2018-01-30 | Seagate Technology Llc | Magnetic sensor manufacturing |
| WO2015010105A1 (en) * | 2013-07-19 | 2015-01-22 | Invensense, Inc. | Application specific integrated circuit with integrated magnetic sensor |
| US9513347B2 (en) * | 2013-10-31 | 2016-12-06 | Invensense, Inc. | Device with magnetic sensors with permanent magnets |
| TWI633321B (zh) * | 2015-03-30 | 2018-08-21 | 財團法人工業技術研究院 | 用於磁場感測之穿隧磁阻裝置 |
| EP3104187A1 (en) * | 2015-06-09 | 2016-12-14 | International Iberian Nanotechnology Laboratory | Magnetoresistive sensor |
| JP6554553B2 (ja) * | 2015-12-03 | 2019-07-31 | アルプスアルパイン株式会社 | 磁気検知装置 |
| US11237227B2 (en) * | 2017-04-25 | 2022-02-01 | Konica Minolta, Inc. | Magnetic sensor |
| JP6605570B2 (ja) * | 2017-12-27 | 2019-11-13 | Ｔｄｋ株式会社 | 磁気センサ |
| JP6978517B2 (ja) * | 2018-01-17 | 2021-12-08 | アルプスアルパイン株式会社 | 磁気検出装置およびその製造方法 |
| US10666251B2 (en) * | 2018-02-14 | 2020-05-26 | General Equipment And Manufacturing Company, Inc. | Target magnet mechanism for proximity switch |
| US11215681B2 (en) * | 2019-07-10 | 2022-01-04 | Allegro Microsystems, Llc | Magnetic field sensor with stray field immunity and large air gap performance |
| CN110568385B (zh) * | 2019-08-02 | 2021-03-30 | 潍坊歌尔微电子有限公司 | 一种磁传感器的制造方法及磁传感器 |
| JP7285745B2 (ja) * | 2019-09-18 | 2023-06-02 | 東京エレクトロン株式会社 | 成膜システム、磁化特性測定装置、および成膜方法 |
| JP7532774B2 (ja) * | 2019-12-26 | 2024-08-14 | 株式会社レゾナック | 磁気センサ |
| CN113391116B (zh) * | 2021-03-17 | 2022-11-25 | 清华大学 | 一种用于测量母线电流的传感器阵列 |
| CN114089232B (zh) * | 2021-11-25 | 2022-08-09 | 西安电子科技大学 | 一种磁场传感器及磁场测量方法 |
| CN114636954B (zh) * | 2022-01-26 | 2025-04-25 | 宁波兴隆磁性技术有限公司 | 一种磁性材料取向方向测试方法 |
| CN115267623B (zh) * | 2022-09-23 | 2023-10-20 | 微传智能科技（常州）有限公司 | 一种磁阻磁开关传感器 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3088478B2 (ja) | 1990-05-21 | 2000-09-18 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
| JP3047567B2 (ja) | 1991-11-05 | 2000-05-29 | 松下電器産業株式会社 | 方位センサ |
| JPH05218982A (ja) | 1992-02-05 | 1993-08-27 | Nec Shizuoka Ltd | アナログ音声回線通話方法 |
| DE4243358A1 (de) * | 1992-12-21 | 1994-06-23 | Siemens Ag | Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung |
| US5465185A (en) | 1993-10-15 | 1995-11-07 | International Business Machines Corporation | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor |
| US5561368A (en) * | 1994-11-04 | 1996-10-01 | International Business Machines Corporation | Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate |
| DE19619806A1 (de) | 1996-05-15 | 1997-11-20 | Siemens Ag | Magnetfeldempfindliche Sensoreinrichtung mit mehreren GMR-Sensorelementen |
| DE19649265C2 (de) | 1996-11-28 | 2001-03-15 | Inst Physikalische Hochtech Ev | GMR-Sensor mit einer Wheatstonebrücke |
| DE59812241D1 (de) | 1997-09-24 | 2004-12-16 | Infineon Technologies Ag | Sensoreinrichtung zur Richtungserfassung eines äu eren Magnetfeldes mittels eines magnetoresistiven Sensorelementes |
| DE19742366C1 (de) | 1997-09-25 | 1999-05-27 | Siemens Ag | Einrichtung mit magnetoresistivem Sensorelement und zugeordneter Magnetisierungsvorrichtung |
| JP3623366B2 (ja) | 1998-07-17 | 2005-02-23 | アルプス電気株式会社 | 巨大磁気抵抗効果素子を備えた磁界センサおよびその製造方法と製造装置 |
| DE69925573T2 (de) | 1999-05-12 | 2006-04-27 | Asulab S.A. | Magnetischer F?hler hergestellt auf einem halbleitenden Substrat |
| JP4338060B2 (ja) | 1999-05-27 | 2009-09-30 | Ｆｄｋ株式会社 | 磁気センサの製造方法 |
| US6465053B1 (en) * | 1999-06-18 | 2002-10-15 | Koninkl Philips Electronics Nv | Method for manufacturing a magnetic device |
| EP1892538A3 (en) * | 1999-06-18 | 2008-08-13 | Koninklijke Philips Electronics N.V. | Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems. |
| JP2001099903A (ja) | 1999-09-30 | 2001-04-13 | Citizen Watch Co Ltd | 磁気センサ |
| JP2001189505A (ja) * | 1999-12-28 | 2001-07-10 | Sony Corp | 磁気抵抗効果薄膜の製造方法 |
| US6633462B2 (en) * | 2000-07-13 | 2003-10-14 | Koninklijke Philips Electronics N.V. | Magnetoresistive angle sensor having several sensing elements |
| JP3498737B2 (ja) * | 2001-01-24 | 2004-02-16 | ヤマハ株式会社 | 磁気センサの製造方法 |
| JP4016857B2 (ja) * | 2002-10-18 | 2007-12-05 | ヤマハ株式会社 | 磁気センサ及びその製造方法 |
| JP3835447B2 (ja) * | 2002-10-23 | 2006-10-18 | ヤマハ株式会社 | 磁気センサ、同磁気センサの製造方法及び同製造方法に適したマグネットアレイ |
-
2004
- 2004-03-12 JP JP2004070927A patent/JP4557134B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-24 EP EP05004046A patent/EP1574870A3/en not_active Withdrawn
- 2005-03-10 US US11/076,069 patent/US7023310B2/en not_active Expired - Fee Related
- 2005-03-10 TW TW094107366A patent/TWI293372B/zh not_active IP Right Cessation
- 2005-03-11 CN CNU2005200118832U patent/CN2791885Y/zh not_active Expired - Lifetime
- 2005-03-11 CN CNB2005100788665A patent/CN100536188C/zh not_active Expired - Fee Related
- 2005-03-11 KR KR1020050020492A patent/KR100627212B1/ko not_active Expired - Fee Related
-
2006
- 2006-01-05 HK HK06100220.6A patent/HK1080605B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1574870A2 (en) | 2005-09-14 |
| KR100627212B1 (ko) | 2006-09-25 |
| JP2005260064A (ja) | 2005-09-22 |
| KR20060043874A (ko) | 2006-05-15 |
| US20050200449A1 (en) | 2005-09-15 |
| HK1080605A1 (zh) | 2006-04-28 |
| EP1574870A3 (en) | 2010-03-03 |
| CN2791885Y (zh) | 2006-06-28 |
| CN1694277A (zh) | 2005-11-09 |
| JP4557134B2 (ja) | 2010-10-06 |
| CN100536188C (zh) | 2009-09-02 |
| TW200604552A (en) | 2006-02-01 |
| US7023310B2 (en) | 2006-04-04 |
| HK1080605B (zh) | 2009-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |