KR100621488B1 - 박막 트랜지스터와 이를 포함하는 전자 장치 - Google Patents

박막 트랜지스터와 이를 포함하는 전자 장치 Download PDF

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Publication number
KR100621488B1
KR100621488B1 KR1019997007175A KR19997007175A KR100621488B1 KR 100621488 B1 KR100621488 B1 KR 100621488B1 KR 1019997007175 A KR1019997007175 A KR 1019997007175A KR 19997007175 A KR19997007175 A KR 19997007175A KR 100621488 B1 KR100621488 B1 KR 100621488B1
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South Korea
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layer
silicon
electronic device
tft
electrode
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Expired - Fee Related
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KR1019997007175A
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English (en)
Korean (ko)
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KR20000070910A (ko
Inventor
딘느스티븐챨스
샤논존마틴
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코닌클리케 필립스 일렉트로닉스 엔.브이.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
KR1019997007175A 1997-12-10 1998-11-13 박막 트랜지스터와 이를 포함하는 전자 장치 Expired - Fee Related KR100621488B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9726094.7A GB9726094D0 (en) 1997-12-10 1997-12-10 Thin film transistors and electronic devices comprising such
GB9726094.7 1997-12-10
PCT/IB1998/001815 WO1999030369A2 (en) 1997-12-10 1998-11-13 Thin film transistors and electronic devices comprising such

Publications (2)

Publication Number Publication Date
KR20000070910A KR20000070910A (ko) 2000-11-25
KR100621488B1 true KR100621488B1 (ko) 2006-09-13

Family

ID=10823387

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997007175A Expired - Fee Related KR100621488B1 (ko) 1997-12-10 1998-11-13 박막 트랜지스터와 이를 포함하는 전자 장치

Country Status (6)

Country Link
US (1) US6064091A (https=)
EP (1) EP0974164A2 (https=)
JP (1) JP2001511317A (https=)
KR (1) KR100621488B1 (https=)
GB (1) GB9726094D0 (https=)
WO (1) WO1999030369A2 (https=)

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US7167155B1 (en) 1995-07-20 2007-01-23 E Ink Corporation Color electrophoretic displays
US6704133B2 (en) 1998-03-18 2004-03-09 E-Ink Corporation Electro-optic display overlays and systems for addressing such displays
US7075502B1 (en) 1998-04-10 2006-07-11 E Ink Corporation Full color reflective display with multichromatic sub-pixels
US7030412B1 (en) * 1999-05-05 2006-04-18 E Ink Corporation Minimally-patterned semiconductor devices for display applications
JP2001135851A (ja) * 1999-11-05 2001-05-18 Minolta Co Ltd 光電変換素子および固体撮像装置
GB2358084B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Semiconductor transistor
GB2358081B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp A thin-film transistor and a method for maufacturing thereof
US6509581B1 (en) * 2000-03-29 2003-01-21 Delta Optoelectronics, Inc. Structure and fabrication process for an improved polymer light emitting diode
KR100767233B1 (ko) 2000-04-18 2007-10-17 이 잉크 코포레이션 박막 트랜지스터의 제조 공정 및 기판
US7893435B2 (en) 2000-04-18 2011-02-22 E Ink Corporation Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough
JP2004516669A (ja) 2000-12-21 2004-06-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄膜フィルムトランジスタ
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
KR101090252B1 (ko) * 2004-09-24 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
JP5243686B2 (ja) * 2005-04-28 2013-07-24 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
US7691691B1 (en) * 2006-05-23 2010-04-06 Kovio, Inc. Semiconductor device and methods for making the same
WO2009129391A2 (en) * 2008-04-17 2009-10-22 Applied Materials, Inc. Low temperature thin film transistor process, device property, and device stability improvement
TWI379142B (en) * 2008-07-17 2012-12-11 Au Optronics Corp Thin film transistor substrate and thin film transistor of display panel and method of making the same
CN101330106B (zh) * 2008-07-28 2010-06-02 友达光电股份有限公司 显示面板的薄膜晶体管基板与薄膜晶体管及其制作方法
KR101824124B1 (ko) * 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
EP2513966B1 (en) 2009-12-18 2020-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI458098B (zh) * 2009-12-31 2014-10-21 友達光電股份有限公司 薄膜電晶體
CN102790056B (zh) * 2012-08-13 2014-12-10 京东方科技集团股份有限公司 阵列基板及其制作方法、goa单元制作方法及显示装置
CN108321152B (zh) * 2018-04-04 2024-10-18 京东方科技集团股份有限公司 指纹识别传感器及其制备方法以及指纹识别设备

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* Cited by examiner, † Cited by third party
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US4341569A (en) * 1979-07-24 1982-07-27 Hughes Aircraft Company Semiconductor on insulator laser process
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
US4617066A (en) * 1984-11-26 1986-10-14 Hughes Aircraft Company Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing
EP0217406B1 (en) * 1985-10-04 1992-06-10 Hosiden Corporation Thin-film transistor and method of fabricating the same
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same
US4762398A (en) * 1987-01-26 1988-08-09 Hosiden Electronics Co., Ltd. Pixel transistor free of parasitic capacitance fluctuations from misalignment
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
US4988638A (en) * 1988-11-07 1991-01-29 Xerox Corporation Method of fabrication a thin film SOI CMOS device
GB2245741A (en) * 1990-06-27 1992-01-08 Philips Electronic Associated Active matrix liquid crystal devices
US5155571A (en) * 1990-08-06 1992-10-13 The Regents Of The University Of California Complementary field effect transistors having strained superlattice structure
US5355002A (en) * 1993-01-19 1994-10-11 Industrial Technology Research Institute Structure of high yield thin film transistors
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5587591A (en) * 1993-12-29 1996-12-24 General Electric Company Solid state fluoroscopic radiation imager with thin film transistor addressable array
US5532180A (en) * 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length

Also Published As

Publication number Publication date
US6064091A (en) 2000-05-16
EP0974164A2 (en) 2000-01-26
JP2001511317A (ja) 2001-08-07
WO1999030369A3 (en) 1999-08-26
GB9726094D0 (en) 1998-02-11
WO1999030369A2 (en) 1999-06-17
KR20000070910A (ko) 2000-11-25

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