KR100616049B1 - 쇼트키 배리어 다이오드 및 그 제조 방법 - Google Patents
쇼트키 배리어 다이오드 및 그 제조 방법 Download PDFInfo
- Publication number
- KR100616049B1 KR100616049B1 KR1020020044135A KR20020044135A KR100616049B1 KR 100616049 B1 KR100616049 B1 KR 100616049B1 KR 1020020044135 A KR1020020044135 A KR 1020020044135A KR 20020044135 A KR20020044135 A KR 20020044135A KR 100616049 B1 KR100616049 B1 KR 100616049B1
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- epitaxial layer
- high concentration
- schottky
- layer
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000005468 ion implantation Methods 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 238000000926 separation method Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 abstract description 39
- 229920001721 polyimide Polymers 0.000 abstract description 39
- 238000005530 etching Methods 0.000 abstract description 21
- 230000009467 reduction Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 174
- 239000010931 gold Substances 0.000 description 34
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 30
- 230000008569 process Effects 0.000 description 22
- 150000004767 nitrides Chemical class 0.000 description 19
- 230000003071 parasitic effect Effects 0.000 description 17
- 238000007747 plating Methods 0.000 description 15
- 230000006872 improvement Effects 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001228049A JP2003046093A (ja) | 2001-07-27 | 2001-07-27 | ショットキーバリアダイオードおよびその製造方法 |
| JPJP-P-2001-00228049 | 2001-07-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20030010554A KR20030010554A (ko) | 2003-02-05 |
| KR100616049B1 true KR100616049B1 (ko) | 2006-08-28 |
Family
ID=19060613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020020044135A KR100616049B1 (ko) | 2001-07-27 | 2002-07-26 | 쇼트키 배리어 다이오드 및 그 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2003046093A (zh) |
| KR (1) | KR100616049B1 (zh) |
| CN (1) | CN1314132C (zh) |
| TW (1) | TW552701B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104425629B (zh) * | 2013-09-03 | 2017-05-24 | 济南嘉源电子有限公司 | 平面型肖特基二极管及其制作方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4260431A (en) * | 1979-12-21 | 1981-04-07 | Harris Corporation | Method of making Schottky barrier diode by ion implantation and impurity diffusion |
| JPH07211924A (ja) * | 1994-01-17 | 1995-08-11 | Nippondenso Co Ltd | ショットキーダイオード及びその製造方法 |
| JP3319514B2 (ja) * | 1999-09-17 | 2002-09-03 | 日本電気株式会社 | Ｉｉｉ−ｖ族化合物半導体結晶積層体の製造方法 |
-
2001
- 2001-07-27 JP JP2001228049A patent/JP2003046093A/ja active Pending
-
2002
- 2002-07-16 TW TW091115770A patent/TW552701B/zh not_active IP Right Cessation
- 2002-07-26 KR KR1020020044135A patent/KR100616049B1/ko not_active IP Right Cessation
- 2002-07-29 CN CNB021272336A patent/CN1314132C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1314132C (zh) | 2007-05-02 |
| CN1400672A (zh) | 2003-03-05 |
| KR20030010554A (ko) | 2003-02-05 |
| TW552701B (en) | 2003-09-11 |
| JP2003046093A (ja) | 2003-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| LAPS | Lapse due to unpaid annual fee |