KR100568510B1 - 저온 동시 소성 세라믹 기판 제조 방법 - Google Patents
저온 동시 소성 세라믹 기판 제조 방법 Download PDFInfo
- Publication number
- KR100568510B1 KR100568510B1 KR1020050110220A KR20050110220A KR100568510B1 KR 100568510 B1 KR100568510 B1 KR 100568510B1 KR 1020050110220 A KR1020050110220 A KR 1020050110220A KR 20050110220 A KR20050110220 A KR 20050110220A KR 100568510 B1 KR100568510 B1 KR 100568510B1
- Authority
- KR
- South Korea
- Prior art keywords
- ceramic substrate
- silver
- plating
- substrate
- etching
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000919 ceramic Substances 0.000 claims abstract description 35
- 239000010949 copper Substances 0.000 claims abstract description 23
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 23
- 238000007747 plating Methods 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 22
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 16
- 230000004913 activation Effects 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 9
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 8
- 230000007935 neutral effect Effects 0.000 claims abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 239000010931 gold Substances 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 150000007524 organic acids Chemical class 0.000 claims abstract description 4
- 230000003213 activating effect Effects 0.000 claims abstract description 3
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 3
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000174 gluconic acid Substances 0.000 claims description 3
- 235000012208 gluconic acid Nutrition 0.000 claims description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical group [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000010953 base metal Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- -1 poly (oxyethylene) nonylphenylether Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
Claims (4)
- 은 또는 동 페이스트가 인쇄된 세라믹 기판을 준비하는 단계,상기 세라믹 기판을 세정하는 단계;상기 세라믹 기판을 유기산과 무기산을 포함하는 용액에서 1차 식각하여 상기 은 페이스트 위로 확산된 유리 성분을 제거하는 단계;상기 유리 성분이 제거된 기판을 무기산을 주성분으로 한 식각 용액에서 2차 식각하여 상기 은 또는 동 페이스트 표면에 형성된 산화막을 제거하는 단계;상기 2차 식각된 기판을 중성의 활성화 용액내에서 활성화시키는 단계;상기 은 또는 동 페이스트 상에 니켈막을 도금하는 단계; 및상기 니켈막 위에 금막을 도금하는 단계를 포함하는 것을 특징으로 하는 저온 동시 소성 세라믹 기판의 제조방법.
- 제1 항에 있어서, 상기 활성화 용액은 파라듐 클로라이드 또는 포타슘 하이드록사이드를 함유하고, 약 6.0 내지 7.0의 pH를 갖는 것을 특징으로 하는 저온 동시 소성 세라믹 기판의 제조방법.
- 제1 항에 있어서, 상기 니켈막은 무전해 도금법으로 형성되는 것을 특징으로 하는 저온 동시 소성 세라믹 기판의 제조방법.
- 제3 항에 있어서, 상기 니켈막의 도금을 위한 무전해 도금법에서 사용되는 도금액은 니켈 썰페이트(Nickel Sulfate), 소듐 하이포포스파이트(Sodium Hypophosphite), 소듐 글루콘산(Sodium Gluconic Acid), 구리샤인(Gurishine)을 포함하고, 약 6.0 내지 7.0의 pH를 갖는 것을 특징으로 하는 저온 동시 소성 세라믹 기판의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020050110220A KR100568510B1 (ko) | 2005-11-17 | 2005-11-17 | 저온 동시 소성 세라믹 기판 제조 방법 |
Applications Claiming Priority (1)
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KR1020050110220A KR100568510B1 (ko) | 2005-11-17 | 2005-11-17 | 저온 동시 소성 세라믹 기판 제조 방법 |
Publications (1)
Publication Number | Publication Date |
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KR100568510B1 true KR100568510B1 (ko) | 2006-04-07 |
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KR1020050110220A KR100568510B1 (ko) | 2005-11-17 | 2005-11-17 | 저온 동시 소성 세라믹 기판 제조 방법 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0610147A (ja) * | 1992-06-25 | 1994-01-18 | Hitachi Ltd | パラジウム活性化液 |
JPH0661622A (ja) * | 1992-08-05 | 1994-03-04 | Hitachi Ltd | セラミック基板のめっき方法 |
JPH08273967A (ja) * | 1995-02-28 | 1996-10-18 | Murata Mfg Co Ltd | 電子部品の電極形成方法 |
JP2001035740A (ja) * | 1999-07-23 | 2001-02-09 | Taiyo Kagaku Kogyo Kk | 外部端子電極具備電子部品及びその製造方法 |
JP2003226981A (ja) * | 2002-02-01 | 2003-08-15 | Murata Mfg Co Ltd | 電子部品のめっき方法、及び電子部品 |
KR20050072367A (ko) * | 2004-01-06 | 2005-07-11 | 엘지전자 주식회사 | 저온 동시소성 세라믹 기판의 무전해 도금방법 |
-
2005
- 2005-11-17 KR KR1020050110220A patent/KR100568510B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0610147A (ja) * | 1992-06-25 | 1994-01-18 | Hitachi Ltd | パラジウム活性化液 |
JPH0661622A (ja) * | 1992-08-05 | 1994-03-04 | Hitachi Ltd | セラミック基板のめっき方法 |
JPH08273967A (ja) * | 1995-02-28 | 1996-10-18 | Murata Mfg Co Ltd | 電子部品の電極形成方法 |
JP2001035740A (ja) * | 1999-07-23 | 2001-02-09 | Taiyo Kagaku Kogyo Kk | 外部端子電極具備電子部品及びその製造方法 |
JP2003226981A (ja) * | 2002-02-01 | 2003-08-15 | Murata Mfg Co Ltd | 電子部品のめっき方法、及び電子部品 |
KR20050072367A (ko) * | 2004-01-06 | 2005-07-11 | 엘지전자 주식회사 | 저온 동시소성 세라믹 기판의 무전해 도금방법 |
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