KR100550304B1 - 하이드로겐-실세스퀴옥산(ｈｓｑ)으로 갭이 채워진 패터닝된 금속층들을 갖는 경계없는 비아들 - Google Patents

하이드로겐-실세스퀴옥산(ｈｓｑ)으로 갭이 채워진 패터닝된 금속층들을 갖는 경계없는 비아들 Download PDF

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KR100550304B1
KR100550304B1 KR1020007003875A KR20007003875A KR100550304B1 KR 100550304 B1 KR100550304 B1 KR 100550304B1 KR 1020007003875 A KR1020007003875 A KR 1020007003875A KR 20007003875 A KR20007003875 A KR 20007003875A KR 100550304 B1 KR100550304 B1 KR 100550304B1
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layer
hsq
containing plasma
bonds
metal
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KR20010031049A (ko
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첸로버트씨.
쉴즈제프리에이.
다우손로버트
트랜칸
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020007003875A 1997-10-16 1998-10-16 하이드로겐-실세스퀴옥산(ｈｓｑ)으로 갭이 채워진 패터닝된 금속층들을 갖는 경계없는 비아들 Expired - Fee Related KR100550304B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8/951,592 1997-10-16
US08/951,592 US5866945A (en) 1997-10-16 1997-10-16 Borderless vias with HSQ gap filled patterned metal layers
US08/951,592 1997-10-16
PCT/US1998/022040 WO1999019904A1 (en) 1997-10-16 1998-10-16 Borderless vias with hsq gap filled patterned metal layers

Publications (2)

Publication Number Publication Date
KR20010031049A KR20010031049A (ko) 2001-04-16
KR100550304B1 true KR100550304B1 (ko) 2006-02-08

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KR1020007003875A Expired - Fee Related KR100550304B1 (ko) 1997-10-16 1998-10-16 하이드로겐-실세스퀴옥산(ｈｓｑ)으로 갭이 채워진 패터닝된 금속층들을 갖는 경계없는 비아들

Country Status (6)

Country Link
US (2) US5866945A (https=)
EP (1) EP1029344B1 (https=)
JP (1) JP4422326B2 (https=)
KR (1) KR100550304B1 (https=)
DE (1) DE69841696D1 (https=)
WO (1) WO1999019904A1 (https=)

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US6180534B1 (en) * 1997-12-18 2001-01-30 Advanced Micro Devices, Inc. Borderless vias without degradation of HSQ gap fill layers
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US6046104A (en) * 1998-05-15 2000-04-04 Advanced Micro Devices, Inc. Low pressure baked HSQ gap fill layer following barrier layer deposition for high integrity borderless vias
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US6169040B1 (en) * 1998-10-20 2001-01-02 Rohm Co., Ltd. Method of manufacturing semiconductor device
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US6596639B1 (en) * 1999-10-08 2003-07-22 Agere Systems Inc. Method for chemical/mechanical planarization of a semiconductor wafer having dissimilar metal pattern densities
US6153512A (en) * 1999-10-12 2000-11-28 Taiwan Semiconductor Manufacturing Company Process to improve adhesion of HSQ to underlying materials
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US6531389B1 (en) * 1999-12-20 2003-03-11 Taiwan Semiconductor Manufacturing Company Method for forming incompletely landed via with attenuated contact resistance
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US6268294B1 (en) * 2000-04-04 2001-07-31 Taiwan Semiconductor Manufacturing Company Method of protecting a low-K dielectric material
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US6713382B1 (en) * 2001-01-31 2004-03-30 Advanced Micro Devices, Inc. Vapor treatment for repairing damage of low-k dielectric
US6455409B1 (en) 2001-02-28 2002-09-24 Advanced Micro Devices, Inc. Damascene processing using a silicon carbide hard mask
US6518646B1 (en) 2001-03-29 2003-02-11 Advanced Micro Devices, Inc. Semiconductor device with variable composition low-k inter-layer dielectric and method of making
US6645864B1 (en) 2002-02-05 2003-11-11 Taiwan Semiconductor Manufacturing Company Physical vapor deposition of an amorphous silicon liner to eliminate resist poisoning
US6770566B1 (en) 2002-03-06 2004-08-03 Cypress Semiconductor Corporation Methods of forming semiconductor structures, and articles and devices formed thereby
US6933246B2 (en) * 2002-06-14 2005-08-23 Trikon Technologies Limited Dielectric film
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
US20040099283A1 (en) * 2002-11-26 2004-05-27 Axcelis Technologies, Inc. Drying process for low-k dielectric films
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7582555B1 (en) * 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
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US7235489B2 (en) * 2004-05-21 2007-06-26 Agere Systems Inc. Device and method to eliminate shorting induced by via to metal misalignment
JP4223012B2 (ja) 2005-02-09 2009-02-12 富士通マイクロエレクトロニクス株式会社 絶縁膜の形成方法、多層構造の形成方法および半導体装置の製造方法
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
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TWI579916B (zh) * 2009-12-09 2017-04-21 諾菲勒斯系統公司 整合可流動氧化物及頂蓋氧化物之新穎間隙填充
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US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
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EP1029344A1 (en) 2000-08-23
JP4422326B2 (ja) 2010-02-24
US6060384A (en) 2000-05-09
EP1029344B1 (en) 2010-06-02
JP2001520459A (ja) 2001-10-30
DE69841696D1 (de) 2010-07-15
WO1999019904A1 (en) 1999-04-22
KR20010031049A (ko) 2001-04-16
US5866945A (en) 1999-02-02

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