KR100549204B1 - 실리콘 이방성 식각 방법 - Google Patents

실리콘 이방성 식각 방법 Download PDF

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Publication number
KR100549204B1
KR100549204B1 KR1020030071391A KR20030071391A KR100549204B1 KR 100549204 B1 KR100549204 B1 KR 100549204B1 KR 1020030071391 A KR1020030071391 A KR 1020030071391A KR 20030071391 A KR20030071391 A KR 20030071391A KR 100549204 B1 KR100549204 B1 KR 100549204B1
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KR
South Korea
Prior art keywords
silicon
polymer
etching
bias power
pressure
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KR1020030071391A
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English (en)
Korean (ko)
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KR20050035674A (ko
Inventor
이순구
보로닌세르게이
정병국
Original Assignee
주식회사 리드시스템
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 리드시스템 filed Critical 주식회사 리드시스템
Priority to KR1020030071391A priority Critical patent/KR100549204B1/ko
Priority to JP2003384100A priority patent/JP3950446B2/ja
Publication of KR20050035674A publication Critical patent/KR20050035674A/ko
Application granted granted Critical
Publication of KR100549204B1 publication Critical patent/KR100549204B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
KR1020030071391A 2003-10-14 2003-10-14 실리콘 이방성 식각 방법 KR100549204B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020030071391A KR100549204B1 (ko) 2003-10-14 2003-10-14 실리콘 이방성 식각 방법
JP2003384100A JP3950446B2 (ja) 2003-10-14 2003-11-13 異方性エッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030071391A KR100549204B1 (ko) 2003-10-14 2003-10-14 실리콘 이방성 식각 방법

Publications (2)

Publication Number Publication Date
KR20050035674A KR20050035674A (ko) 2005-04-19
KR100549204B1 true KR100549204B1 (ko) 2006-02-02

Family

ID=34617214

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030071391A KR100549204B1 (ko) 2003-10-14 2003-10-14 실리콘 이방성 식각 방법

Country Status (2)

Country Link
JP (1) JP3950446B2 (ja)
KR (1) KR100549204B1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7273815B2 (en) * 2005-08-18 2007-09-25 Lam Research Corporation Etch features with reduced line edge roughness
US7309646B1 (en) * 2006-10-10 2007-12-18 Lam Research Corporation De-fluoridation process
US8262920B2 (en) * 2007-06-18 2012-09-11 Lam Research Corporation Minimization of mask undercut on deep silicon etch
JP2009147000A (ja) * 2007-12-12 2009-07-02 Seiko Instruments Inc 半導体装置の製造方法
JP5102653B2 (ja) * 2008-02-29 2012-12-19 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
WO2009117565A2 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus of a substrate etching system and process
KR101330650B1 (ko) * 2009-08-14 2013-11-19 가부시키가이샤 알박 에칭 방법
JP6081176B2 (ja) * 2012-12-12 2017-02-15 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
KR102489215B1 (ko) * 2016-09-06 2023-01-16 도쿄엘렉트론가부시키가이샤 유사 원자층 에칭 방법

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Publication number Publication date
KR20050035674A (ko) 2005-04-19
JP2005123550A (ja) 2005-05-12
JP3950446B2 (ja) 2007-08-01

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