KR100543319B1 - 쌍극 정전 척에서 플라즈마 바이어스 전압을 오프셋하기위한 방법 및 장치 - Google Patents

쌍극 정전 척에서 플라즈마 바이어스 전압을 오프셋하기위한 방법 및 장치 Download PDF

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KR100543319B1
KR100543319B1 KR1019997012241A KR19997012241A KR100543319B1 KR 100543319 B1 KR100543319 B1 KR 100543319B1 KR 1019997012241 A KR1019997012241 A KR 1019997012241A KR 19997012241 A KR19997012241 A KR 19997012241A KR 100543319 B1 KR100543319 B1 KR 100543319B1
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South Korea
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output
voltage
resistor
power supply
control
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Korean (ko)
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KR20010014170A (ko
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알버트엠. 램슨
릭 케이플
에릭에이치. 렌즈
로라엠. 브라운
리키 마쉬
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
KR1019997012241A 1997-06-27 1998-06-24 쌍극 정전 척에서 플라즈마 바이어스 전압을 오프셋하기위한 방법 및 장치 Expired - Lifetime KR100543319B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/883,068 1997-06-27
US08/883,068 US5933314A (en) 1997-06-27 1997-06-27 Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
PCT/US1998/013159 WO1999000889A1 (en) 1997-06-27 1998-06-24 A method and an apparatus for offsetting plasma bias voltage in bipolar electrostatic chucks

Publications (2)

Publication Number Publication Date
KR20010014170A KR20010014170A (ko) 2001-02-26
KR100543319B1 true KR100543319B1 (ko) 2006-01-20

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KR1019997012241A Expired - Lifetime KR100543319B1 (ko) 1997-06-27 1998-06-24 쌍극 정전 척에서 플라즈마 바이어스 전압을 오프셋하기위한 방법 및 장치

Country Status (8)

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US (1) US5933314A (https=)
EP (1) EP0992106B1 (https=)
JP (1) JP4299370B2 (https=)
KR (1) KR100543319B1 (https=)
AT (1) ATE301880T1 (https=)
DE (1) DE69831152T2 (https=)
TW (1) TW383417B (https=)
WO (1) WO1999000889A1 (https=)

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US6188564B1 (en) * 1999-03-31 2001-02-13 Lam Research Corporation Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber
US6898064B1 (en) * 2001-08-29 2005-05-24 Lsi Logic Corporation System and method for optimizing the electrostatic removal of a workpiece from a chuck
US6898065B2 (en) * 2002-07-26 2005-05-24 Brad Mays Method and apparatus for operating an electrostatic chuck in a semiconductor substrate processing system
KR100545169B1 (ko) * 2003-09-03 2006-01-24 동부아남반도체 주식회사 반도체 제조 설비의 정전척 및 이를 이용한 웨이퍼 척킹방법
US7264676B2 (en) * 2003-09-11 2007-09-04 United Microelectronics Corp. Plasma apparatus and method capable of adaptive impedance matching
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JP2007048986A (ja) * 2005-08-10 2007-02-22 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
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JP4802018B2 (ja) * 2006-03-09 2011-10-26 筑波精工株式会社 静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置
KR101213103B1 (ko) * 2006-06-30 2013-01-09 엘지디스플레이 주식회사 합착 장치 및 이를 이용한 전계발광소자의 제조방법
US7768766B2 (en) * 2007-06-01 2010-08-03 Lam Research Corporation Plasma processing system ESC high voltage control
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US7558045B1 (en) * 2008-03-20 2009-07-07 Novellus Systems, Inc. Electrostatic chuck assembly with capacitive sense feature, and related operating method
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US8901935B2 (en) * 2009-11-19 2014-12-02 Lam Research Corporation Methods and apparatus for detecting the confinement state of plasma in a plasma processing system
JP2011187881A (ja) * 2010-03-11 2011-09-22 Hitachi High-Technologies Corp プラズマ処理装置および方法
US9076831B2 (en) * 2011-11-04 2015-07-07 Lam Research Corporation Substrate clamping system and method for operating the same
US9017513B2 (en) 2012-11-07 2015-04-28 Lam Research Corporation Plasma monitoring probe assembly and processing chamber incorporating the same
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
WO2015192256A1 (en) 2014-06-17 2015-12-23 Evatec Ag Electro-static chuck with radiofrequency shunt
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
JP6407694B2 (ja) * 2014-12-16 2018-10-17 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN106298615B (zh) * 2015-05-27 2019-03-12 北京北方华创微电子装备有限公司 静电卡盘、反应腔室及半导体加工设备
JP6708358B2 (ja) * 2016-08-03 2020-06-10 株式会社日立ハイテク プラズマ処理装置及び試料の離脱方法
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US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US20200048770A1 (en) * 2018-08-07 2020-02-13 Lam Research Corporation Chemical vapor deposition tool for preventing or suppressing arcing
US11476145B2 (en) * 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
TWI869928B (zh) * 2020-03-20 2025-01-11 荷蘭商Ａｓｍｌ荷蘭公司 用於檢查晶圓之系統及其相關非暫時性電腦可讀媒體
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11776835B2 (en) 2020-09-29 2023-10-03 Applied Materials, Inc. Power supply signal conditioning for an electrostatic chuck
US11594440B2 (en) * 2020-10-21 2023-02-28 Applied Materials, Inc. Real time bias detection and correction for electrostatic chuck
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
CN115250648B (zh) 2021-02-25 2025-11-11 株式会社日立高新技术 等离子处理装置
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
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US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
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US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
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US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
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Also Published As

Publication number Publication date
ATE301880T1 (de) 2005-08-15
JP4299370B2 (ja) 2009-07-22
TW383417B (en) 2000-03-01
US5933314A (en) 1999-08-03
KR20010014170A (ko) 2001-02-26
EP0992106A1 (en) 2000-04-12
EP0992106B1 (en) 2005-08-10
WO1999000889A1 (en) 1999-01-07
DE69831152D1 (de) 2005-09-15
JP2002507326A (ja) 2002-03-05
DE69831152T2 (de) 2006-04-20

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