KR100540536B1 - Epoxy resin composition for semiconductor sealing with improved reliability - Google Patents
Epoxy resin composition for semiconductor sealing with improved reliability Download PDFInfo
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- KR100540536B1 KR100540536B1 KR1019980062988A KR19980062988A KR100540536B1 KR 100540536 B1 KR100540536 B1 KR 100540536B1 KR 1019980062988 A KR1019980062988 A KR 1019980062988A KR 19980062988 A KR19980062988 A KR 19980062988A KR 100540536 B1 KR100540536 B1 KR 100540536B1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L55/00—Compositions of homopolymers or copolymers, obtained by polymerisation reactions only involving carbon-to-carbon unsaturated bonds, not provided for in groups C08L23/00 - C08L53/00
- C08L55/005—Homopolymers or copolymers obtained by polymerisation of macromolecular compounds terminated by a carbon-to-carbon double bond
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Abstract
본 발명은 반도체 봉지용 에폭시 수지 조성물에 관한 것으로, 좀 더 상세하게는 (A) 에폭시 수지, (B) 페놀 수지, 메타크릴-부타디엔-스타이렌 공중합체 및 실란 커플링제를 선처리하여 얻어지는 페놀 수지, (C) 실리카 분말, (D) 실리콘 오일 및 (E) 실리콘 고무로 필수적으로 이루어진 신뢰성이 향상된 반도체 봉지용 에폭시 수지 조성물에 관한 것이다. 본 발명의 에폭시 수지 조성물은 저응력으로 고온 내습성, 내크랙성 열적 응력이 우수하고, 부착력이 높은 고신뢰성의 에폭시 수지 조성물을 얻을 수 있었다.The present invention relates to an epoxy resin composition for semiconductor encapsulation, and more particularly, a phenol resin obtained by pretreating (A) an epoxy resin, (B) a phenol resin, a methacryl-butadiene-styrene copolymer and a silane coupling agent, An epoxy resin composition for semiconductor encapsulation with improved reliability consisting essentially of (C) silica powder, (D) silicone oil and (E) silicone rubber. The epoxy resin composition of this invention was able to obtain the highly reliable epoxy resin composition which was excellent in high temperature-moisture resistance and crack resistance thermal stress with low stress, and was high in adhesive force.
Description
본 발명은 저응력으로서, 내습성, 내크랙성 및 열적 응력이 우수한 전기,전자 부품 등에 사용되는 반도체 봉지용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for semiconductor encapsulation, which is used for electric and electronic parts having low stress and excellent moisture resistance, crack resistance and thermal stress.
에폭시 수지는 전기절연 특성, 기계적 물성, 내습성 등이 우수하기 때문에, 신뢰성이 높은 절연재료로서 반도체 장치, 전자부품, 전기부품의 봉지 등에 넓게 이용되어 왔다. 특히, 에폭시 수지를 이용한 반도체 장치의 봉지는 저가이며, 대량생산이 가능하기 때문에, 수지 봉지에 있어서 주류로 사용되어 왔다.Epoxy resins have been widely used for sealing semiconductor devices, electronic parts, and electrical parts as highly reliable insulating materials because of their excellent electrical insulating properties, mechanical properties, moisture resistance, and the like. In particular, encapsulation of semiconductor devices using epoxy resins has been used as mainstream in resin encapsulation because of their low cost and mass production.
반도체 봉지 재료로서 수지에 요구되는 특성은 반도체 소자 상의 금속배선의 부식을 방지하기 위하여 높은 내부식성 및 반도체 소자와 리드 프레임을 연결시켜주는 금속배선의 열 충격에 의한 단선불량을 방지하기 위하여 높은 내열충격성이 요구되어 왔다.The characteristics required for resin as a semiconductor encapsulation material are high corrosion resistance to prevent corrosion of metal wiring on the semiconductor device and high thermal shock resistance to prevent disconnection caused by thermal shock of metal wiring connecting the semiconductor device and the lead frame. This has been required.
최근, 반도체 소자의 고집적화에 따라, 금속배선은 보다 미세화하고, 반도체 칩의 크기는 대형화하고 있으며, 수지 팩캐지의 소형화, 박형화도 급속하게 진전하고 있다. 이와 같이, 소형화 및 박형화된 수지 팩캐지를 반도체 소자에 실장할 경우, 팩캐지는 240∼260℃의 고온에 약 5∼20초간 냅땜 처리를 행하는 과정이 필요하다.In recent years, with the higher integration of semiconductor devices, metal wirings have become smaller and semiconductor chips have become larger in size, and resin package cages have become smaller and thinner. As described above, when the miniaturized and thin resin package is mounted on a semiconductor element, the package needs to be subjected to a nap soldering process for about 5 to 20 seconds at a high temperature of 240 to 260 ° C.
그러나, 소형, 박형화된 팩캐지는 반도체 소자 상하의 두께가 얇아서, 고온에서 납땜 처리가 행하여지면, 팩캐지에 크랙이 발생하거나 수지 봉지재의 내습성이 저하되는 문제가 발생한다. 이와 같은 문제에 대응할 수 있는 방법으로는 수지 재료의 내부 응력을 저하시키는 것이 필요하다.However, the small and thin package has a small thickness above and below the semiconductor element, and if soldering is performed at a high temperature, a crack occurs in the package or a problem that the moisture resistance of the resin encapsulant decreases. As a method that can cope with such a problem, it is necessary to lower the internal stress of the resin material.
수지 재료의 내부 응력을 저하시키기 위해서 일본 특개평 제 3-74456호에서는 에폭시 수지에 천연 고무를 첨가하는 방법을 사용하였으나, 이러한 변성수지를 사용한 경우는 내습성 등을 저하시키는 단점이 있다.In order to reduce the internal stress of the resin material, Japanese Laid-Open Patent Publication No. 3-74456 used a method of adding natural rubber to an epoxy resin, but in the case of using such modified resin, there is a disadvantage in that moisture resistance and the like are reduced.
따라서, 본 발명의 목적은 종래의 에폭시 수지 봉지재의 단점을 보완하고, 저응력이며, 리드 프레임과의 밀착력이 우수하고, 특히 내습성이 높은 반도체 봉지용 에폭시 수지 조성물을 제공하는데 있다.Accordingly, it is an object of the present invention to provide an epoxy resin composition for semiconductor encapsulation that compensates for the shortcomings of the conventional epoxy resin encapsulant, is low in stress, excellent in adhesion to the lead frame, and particularly high in moisture resistance.
상기 목적을 달성하기 위한 본 발명의 에폭시 수지 조성물은Epoxy resin composition of the present invention for achieving the above object
(A) 에폭시 수지 100 중량부,(A) 100 parts by weight of epoxy resin,
(B) (1) 에폭시 수지 1당량에 대하여 0.5∼1.5 -OH 당량의 페놀 수지,(B) 0.5 to 1.5-OH equivalents of phenol resin per 1 equivalent of epoxy resin,
(2) 상기 페놀 수지 100 중량부에 대하여 5∼50 중량부의 메타크릴-부타디엔-스타이렌 공중합체 (이하, MBS 수지라 칭함) 및(2) 5 to 50 parts by weight of methacryl-butadiene-styrene copolymer (hereinafter referred to as MBS resin) based on 100 parts by weight of the phenol resin;
(3) 상기 페놀 수지 100 중량부에 대하여 5∼20 중량부의 실란 커플링제를 선처리하여 얻어지는 페놀 수지 30∼150 중량부,(3) 30 to 150 parts by weight of a phenol resin obtained by pretreating 5 to 20 parts by weight of a silane coupling agent with respect to 100 parts by weight of the phenol resin,
(C) 실리카 분말 400∼1000 중량부,(C) 400 to 1000 parts by weight of silica powder,
(D) 실리콘 오일 0.05∼3.0 중량부 및(D) 0.05 to 3.0 parts by weight of silicone oil, and
(E) 실리콘 고무 0.05∼5.0 중량부로 필수적으로 이루어진다. (E) It consists essentially of 0.05-5.0 weight part of silicone rubber.
본 발명의 반도체 봉지용 에폭시 수지 조성물은The epoxy resin composition for semiconductor encapsulation of the present invention
(A) 에폭시 수지 100 중량부,(A) 100 parts by weight of epoxy resin,
(B) (1) 에폭시 수지 1당량에 대하여 0.5∼1.5 -OH 당량의 페놀 수지,(B) 0.5 to 1.5-OH equivalents of phenol resin per 1 equivalent of epoxy resin,
(2) 상기 페놀 수지 100 중량부에 대하여 5∼50 중량부의 메타크릴-부타디엔-스타이렌 공중합체 (이하, MBS 수지라 칭함) 및(2) 5 to 50 parts by weight of methacryl-butadiene-styrene copolymer (hereinafter referred to as MBS resin) based on 100 parts by weight of the phenol resin;
(3) 상기 페놀 수지 100 중량부에 대하여 5∼20 중량부의 실란 커플링제를 선처리하여 얻어지는 페놀 수지 30∼150 중량부,(3) 30 to 150 parts by weight of a phenol resin obtained by pretreating 5 to 20 parts by weight of a silane coupling agent with respect to 100 parts by weight of the phenol resin,
(C) 실리카 분말 400∼1000 중량부,(C) 400 to 1000 parts by weight of silica powder,
(D) 실리콘 오일 0.05∼3.0 중량부 및(D) 0.05 to 3.0 parts by weight of silicone oil, and
(E) 실리콘 고무 0.05∼5.0 중량부를 필수적으로 포함한다.(E) Essentially contains 0.05-5.0 weight part of silicone rubber.
본 발명의 에폭시 수지 조성물은 상기 5종의 필수 성분을 함유하고 있다.The epoxy resin composition of this invention contains the said 5 essential components.
성분(A)는 에폭시 수지로서, 특히 제한되는 것은 아니고, 예를 들면, 비스페놀-A형 에폭시 수지, 페놀노볼락형 에폭시 수지, 크레졸노볼락형 에폭시 수지, 비페닐형 에폭시 수지, 지환형 에폭시 수지, 선형지방족 에폭시 수지, 복소환계 에폭시 수지 및 할로겐형 에폭시 수지로 이루어진 군으로부터 하나 또는 그이상 선택된 것으로, 1분자 중에 에폭시기를 2개 이상 함유하는 것이다.The component (A) is an epoxy resin, and is not particularly limited. For example, a bisphenol-A type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a biphenyl type epoxy resin, and an alicyclic epoxy resin , At least one selected from the group consisting of linear aliphatic epoxy resins, heterocyclic epoxy resins and halogen type epoxy resins, and contains two or more epoxy groups in one molecule.
본 발명에 사용하는 에폭시 수지는 반도체 장치의 금속배선의 부식을 저감하기 위하여 염소 이온의 함량이 낮은 에폭시 수지를 사용하는 것이 바람직하며, 바람직하게는 10 ppm 이하인 것이 좋고, 또한 가수분해성 염소분은 500 ppm 이하인 에폭시 수지를 사용하는 것이 바람직하다.In order to reduce the corrosion of the metal wiring of the semiconductor device, the epoxy resin used in the present invention is preferably an epoxy resin having a low content of chlorine ions, preferably 10 ppm or less, and a hydrolyzable chlorine powder of 500 Preference is given to using epoxy resins which are ppm or less.
성분 (B)는 에폭시 수지 성분 (A)의 경화제로서 MBS 수지 및 실란 커플링제로 선처리된 페놀수지로서, 그 사용량은 성분 (A)인 에폭시 수지 100 중량부에 대하여 30∼150 중량부이다. 이때, 상기 성분 (B)의 사용량이 30 중량부 미만이면, 에폭시 수지 조성물의 경화시 경화도가 저하되는 문제가 발생하고, 150 중량부를 초과하면, 에폭시 수지 조성물로 경화된 경화물의 흡습이 증가하는 문제가 발생하며, 바람직하기로는 상기 사용량은 55∼100 중량부이다.Component (B) is a phenol resin pretreated with MBS resin and silane coupling agent as a curing agent of epoxy resin component (A), and its amount is 30 to 150 parts by weight based on 100 parts by weight of the epoxy resin of component (A). At this time, if the amount of the component (B) is less than 30 parts by weight, a problem that the degree of curing during curing of the epoxy resin composition is lowered, and if more than 150 parts by weight, the moisture absorption of the cured product cured with the epoxy resin composition increases Is generated, and the amount is preferably 55 to 100 parts by weight.
(B)의 성분 중 (1)의 페놀 수지는 예를 들면, 페놀노볼락 수지, 크레졸 노볼락 수지, t-부틸페놀노볼락 수지, 페놀아랄킬 수지, 노닐페놀 수지, 레졸형페놀 수지, 비스페놀-A 수지 및 디사이클로펜타디엔페놀 수지로 이루어진 군으로부터 하나 또는 그 이상 선택되나, 이에 한정되는 것은 아니며, 1분자 중 페놀성 -OH기를 2개 이상 함유하는 것을 특징으로 한다. 이때, 사용되는 페놀 수지는 에폭시 수지의 에폭시 1당량에 대하여 페놀 수지의 -OH 당량이 0.5∼1.5 정도인 것이 바람직하며, 더 바람직하기로는 0.9∼1.1이 바람직하다. 만일, 상기 에폭시 수지와 페놀 수지의 당량비가 상기 범위를 벗어날 경우, 에폭시 수지 조성물의 강도 저하로 인하여 내크랙성이 불량해질 수 있다.The phenol resin of (1) in the component of (B) is phenol novolak resin, cresol novolak resin, t-butyl phenol novolak resin, phenol aralkyl resin, nonylphenol resin, resol type phenol resin, bisphenol, for example. One or more selected from the group consisting of -A resin and dicyclopentadiene phenol resin, but is not limited thereto, characterized in that it contains at least two phenolic -OH groups in one molecule. At this time, it is preferable that -OH equivalent of a phenol resin is about 0.5-1.5 with respect to 1 equivalent of epoxy of an epoxy resin, and, as for the phenol resin used, More preferably, 0.9-1.1 are preferable. If the equivalent ratio of the epoxy resin and the phenol resin is out of the range, crack resistance may be deteriorated due to a decrease in strength of the epoxy resin composition.
상기 성분 (B)의 (2) MBS 수지는 통상적으로 30∼70 중량%의 부타디엔 단위를 함유하고 있는 것으로서, 합성에 의하여 얻을 수도 있으나, 본 발명에서는 시판되고 있는 것으로, 미쯔비시 레이온 사의 메타브렌 MBS 수지를 적용하였다. 이때 MBS 수지는 페놀수지 100중량부에 대하여 5∼50 중량부를 포함하며, 바람직하게는 10∼40 중량부를 포함한다. 상기 MBS 수지의 함량이 5 중량부 미만일 경우, 적용시 저응력화의 효과를 볼 수 없고, 50 중량부를 초과할 경우, 처리시 분산성이 좋지 않아 흐름성에 악영향을 준다.(2) MBS resin of the said component (B) contains 30-70 weight% of butadiene units normally and can also be obtained by synthesis | combination, but it is marketed by this invention, and is a commercially available metabrene MBS resin of Mitsubishi Rayon. Was applied. At this time, the MBS resin includes 5 to 50 parts by weight, and preferably 10 to 40 parts by weight based on 100 parts by weight of the phenol resin. When the content of the MBS resin is less than 5 parts by weight, the effect of low stress at the time of application can not be seen, if it exceeds 50 parts by weight, the dispersibility during the treatment does not have good adverse effects on the flowability.
상기 성분 (B)의 (3) 실란 커플링제는 글리시딜기를 갖는 실란 커플링제 (이하, 실란커플링제-a라고 칭함) 단독 또는 사이클로헥실 에폭시기, 아미노기, 머캡토기, 클로로기 및 메타크릴기 실란 커플링제 (이하, 실란 커플링제-b라 칭함)를 포함하며, 바람직하기로는 상기 실란 커플링제-b는 사이클로헥실 에폭시기, 아미노기, 머캡토기를 함유하는 실란 커플링제를 포함한다. 또한, 상기 실란 커플링제의 함량은 상기 100 중량부에 대하여 5∼20 중량부이며, 바람직하기로는 5∼15 중량부이다. 상기 실란 커플링제의 함량이 5 중량부 미만이면, 에폭시 수지 조성물의 강도가 저하될 수 있고, 20 중량부를 초과하면, 선처리 페놀 수지의 제조시 처리가 곤란한 경우가 있다. 실란 커플링제-a/실란 커플링제-b의 중량비는 1/0∼1/1임을 특징으로 한다. 상기 두 실란 커플링제의 혼합비가 상기 범위를 벗어날 경우, 수지 조성물과 리드 프레임과의 밀착성의 향상에 영향을 주지 못한다.The silane coupling agent (3) of the component (B) is a silane coupling agent having a glycidyl group (hereinafter referred to as silane coupling agent-a) alone or a cyclohexyl epoxy group, an amino group, a mercapto group, a chloro group and a methacryl group silane. Coupling agent (hereinafter referred to as silane coupling agent-b), and preferably, the silane coupling agent-b includes a silane coupling agent containing a cyclohexyl epoxy group, an amino group, and a mercapto group. In addition, the content of the silane coupling agent is 5 to 20 parts by weight, preferably 5 to 15 parts by weight based on 100 parts by weight. If the content of the silane coupling agent is less than 5 parts by weight, the strength of the epoxy resin composition may be lowered. If the content of the silane coupling agent is more than 20 parts by weight, the treatment at the time of preparation of the pretreated phenol resin may be difficult. The weight ratio of silane coupling agent-a / silane coupling agent-b is 1/0 to 1/1. When the mixing ratio of the two silane coupling agents is out of the above range, it does not affect the improvement of adhesion between the resin composition and the lead frame.
성분 (B)의 선처리 방법은 페놀 수지 100 중량부를 130℃∼160℃의 온도에서 용해시키고, 1∼2시간 동안 감압하에서 페놀 수지에 소량 포함되어 있는 수분을 제거한다. 상기 페놀 수지에 MBS 수지 5∼50 중량부를 서서히 첨가한 후, 30분 정도 분산시키고, 실란 커플링제 5∼20중량부를 서서히 첨가한 후, 약 2∼6시간 정도 교반하여 성분 (B)가 제조된다.The pretreatment method of component (B) melt | dissolves 100 weight part of phenol resins at the temperature of 130 degreeC-160 degreeC, and removes the water contained in a small amount in phenol resins under reduced pressure for 1-2 hours. After adding 5-50 weight part of MBS resins gradually to the said phenol resin, disperse | distributing for about 30 minutes, and adding 5-20 weight part of silane coupling agents gradually, and stirring for about 2 to 6 hours, component (B) is manufactured. .
성분 (C)의 실리카 분말은 용융 실리카 또는 결정성 실리카를 사용할 수 있으며, 이에 한정되는 것은 아니다. 이는 파쇄상, 구상 및 섬유상 등 어떠한 형상의 것이여도 좋다. 또한, 반도체 장치의 파손 방지, 성형성 및 저응력성을 부여하기 위하여 100∼200 메쉬 (mesh)로 커팅 (cutting)한 것을 사용하는 것이 바람직하다. 특히, 메모리 소자 등의 반도체 장치를 봉지하는 경우에는 소프트 에러 (error)를 방지하기 위하여 방사선 원소의 함량이 1.0 ppb 이하인 것이 바람직하다.The silica powder of component (C) may use fused silica or crystalline silica, but is not limited thereto. It may be of any shape such as crushed, spherical and fibrous. In addition, in order to prevent breakage, formability and low stress of the semiconductor device, it is preferable to use one cut into 100 to 200 mesh. In particular, when encapsulating a semiconductor device such as a memory element, the content of the radiation element is preferably 1.0 ppb or less in order to prevent soft errors.
성분 (C) 실리카 분말의 사용량은 성분 (A) 에폭시수지 100 중량부에 대하여 400∼1000 중량부가 적당하고, 바람직하게 상기 사용량은 600∼900 중량부이다. 만일, 상기 성분 (C) 실리카 분말의 사용량이 400 중량부 미만이면, 에폭시 수지 조성물로 경화된 경화물의 강도가 저하되는 문제가 발생하며, 1000 중량부를 초과하면, 에폭시 수지 조성물로 성형시 흐름성이 저하되는 문제가 발생한다.The amount of the component (C) silica powder is suitably 400 to 1000 parts by weight based on 100 parts by weight of the component (A) epoxy resin, and preferably the amount is 600 to 900 parts by weight. If the amount of the component (C) silica powder is less than 400 parts by weight, a problem occurs that the strength of the cured product cured with the epoxy resin composition is lowered. The problem of deterioration arises.
성분 (D)의 실리콘 오일은 반응성 또는 비반응성 실리콘 오일이 모두 가능하며, 예를 들면, 양말단 아민 실리콘 오일, 양말단 에폭시 실리콘 오일, 양말단 페놀 실리콘 오일, 양말단 메칠 실리콘 오일 및 측쇄형 에폭시 실리콘 오일로 이루어진 군으로부터 하나 또는 그 이상 선택된다. 상기 성분 (D)의 함량은 성분 (A) 에폭시 수지 100 중량부에 대하여 0.05∼3.0 중량부가 바람직하다. 만일 상기 (D)의 함량이 0.05 중량부 미만이면, 에폭시 수지 조성물로 경화된 경화물의 응력해소에 도움을 주지 못하는 문제가 발생하며, 3.0 중량부를 초과하면, 경화물의 흡습이 증가하거나 흐름성이 저하되는 문제가 발생한다.The silicone oils of component (D) can be both reactive or non-reactive silicone oils, for example sock amine silicone oil, sock epoxy resin, sock phenol silicone oil, sock methyl silicone oil and branched epoxy One or more selected from the group consisting of silicone oils. As for content of the said component (D), 0.05-3.0 weight part is preferable with respect to 100 weight part of component (A) epoxy resins. If the content of (D) is less than 0.05 parts by weight, there is a problem that does not help to relieve the stress of the cured product cured with the epoxy resin composition, if exceeding 3.0 parts by weight, the moisture absorption of the cured product increases or the flowability is lowered Problem occurs.
성분 (E) 실리콘 고무는 특별히 한정지어지는 것은 아니며, 상용화되어 시판되는 실리콘 고무 중에서 선택되며, 이의 함량은 성분 (A) 에폭시수지 100중량부에 대하여 0.05∼5.0 중량부가 바람직하다. 사용량이 상기 범위를 벗어날 경우, 신뢰성의 향상에 영향을 주지 못하거나, 성형성에 악영향을 미칠 수 있다.The component (E) silicone rubber is not particularly limited and is selected from commercially available commercially available silicone rubbers, and its content is preferably 0.05 to 5.0 parts by weight based on 100 parts by weight of the component (A) epoxy resin. If the amount of use exceeds the above range, it may not affect the improvement of the reliability or may adversely affect the moldability.
기타 필요한 성분으로서는 카본블랙 등의 착색제, 난연성의 확보를 위한 안티몬계 난연화제, 인계 난연화제 등을 함유한다. 또한, 몰드와 팩캐지의 이탈을 용이하게 하기 위하여 소량의 이형제 및 경화촉진제를 필요로 한다.Other necessary components include colorants such as carbon black, antimony flame retardants for securing flame retardancy, phosphorus flame retardants, and the like. In addition, a small amount of a release agent and a curing accelerator are required to facilitate the separation of the mold and the package.
상기 경화촉진제로는 일반적으로 에폭시 수지와 페놀 수지의 경화를 촉진할 수 있는 모든 것이 사용가능하며, 예를들면, 트리페닐 포스핀, 테트라페닐 포스핀 테트라페닐 보레이트 등의 포스핀계 또는 2-메칠이미다졸, 2-에칠-4-메칠 이미다졸 등의 이미다졸계, DBU 또는 DBN 등의 아민류로 이루어진 군으로부터 하나 또는 그 이상 선택하여 사용된다.As the curing accelerator, generally, any one capable of promoting the curing of the epoxy resin and the phenol resin may be used. For example, a phosphine-based or 2-methyl group such as triphenyl phosphine, tetraphenyl phosphine or tetraphenyl borate may be used. One or more selected from the group consisting of imidazoles such as midazoles and 2-ethyl-4-methyl imidazoles, and amines such as DBU or DBN.
이하, 실시예를 통하여 본 발명을 좀 더 구체적으로 한정하지만, 하기 실시예에 본 발명의 범주가 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited to the following Examples.
실시예Example
제조예 1∼4Production Examples 1-4
페놀 수지, MBS 수지, 실란 커플링제에 의한 선처리 페놀수지의 제조는 하기 표 1에 나타내어진 배합을 토대로 수행하였다. 먼저 페놀수지를 150℃에서 용해하고, 1시간 정도 100 Torr의 감압도에서 감압을 행하여, 보관 중에 페놀 수지가 흡수한 수분을 완전히 제거한다. 이렇게 수분이 제거된 페놀 수지에 MBS 수지를 첨가하여 30분동안 400rpm에서 교반하여 MBS 수지를 분산시킨 후, 배합량의 실린 커플링제를 20분에 걸쳐서 서서히 적하한다. 실란 커플링제의 적하가 완료되면 온도를 150℃로 유지하면서 3시간 유지반응을 행하여 선처리 페놀 수지를 얻었다.The preparation of the pretreated phenolic resin by phenol resin, MBS resin, and silane coupling agent was performed based on the formulation shown in Table 1 below. First, a phenol resin is melt | dissolved at 150 degreeC, pressure reduction is carried out at the pressure reduction degree of 100 Torr for about 1 hour, and the moisture absorbed by a phenol resin is completely removed during storage. MBS resin was added to the phenol resin from which the water was removed, and the mixture was stirred at 400 rpm for 30 minutes to disperse the MBS resin, and then the compounded amount of the silin coupling agent was slowly added dropwise over 20 minutes. When the dropwise addition of the silane coupling agent was completed, the reaction was carried out for 3 hours while maintaining the temperature at 150 占 폚 to obtain a pretreated phenol resin.
실시예 1∼4 및 비교예 1∼3Examples 1-4 and Comparative Examples 1-3
에폭시 조성물의 제조는 하기 표 2에 주어진 배합에 따라 무게를 달고, 이를 100∼90℃인 Two-Roll을 이용하여 4분에 걸쳐 충분히 분산시킨 후, 이를 분쇄하여 얻었다. 이렇게 얻어진 에폭시 수지 조성물을 175℃에서 120초간 트랜스퍼 몰딩을 행하고, 이를 175℃에서 6시간동안 후경화를 행하여 반도체 봉지용 수지를 얻었다.Preparation of the epoxy composition was weighed according to the formulation given in Table 2 below, it was sufficiently dispersed over 4 minutes using Two-Roll of 100 ~ 90 ℃, and then obtained by grinding it. The epoxy resin composition thus obtained was subjected to transfer molding at 175 ° C. for 120 seconds, and then post-cured at 175 ° C. for 6 hours to obtain a resin for semiconductor encapsulation.
1 O-Cresol Novoloc 형 에폭시 수지 (일본 화약 (주)); 연화점 65℃; 에폭시 당량 200g/eq.1 O-Cresol Novoloc type epoxy resin (Japan Gunpowder Co., Ltd.); Softening point 65 ° C; Epoxy equivalent 200 g / eq.
2 브롬화 페놀 노볼락 수지 (일본 화약 (주)); 브롬 함량 34 중량%.2 brominated phenol novolak resins (Japan Gunpowder Co., Ltd.); Bromine content 34% by weight.
3 페놀 노볼락 수지 (메이다 화약 (주)); 연화점 80℃; -OH 당량 100g/eq.3 phenol novolak resin (Meida Gunpowder Co., Ltd.); Softening point 80 ° C; -OH equivalent 100 g / eq.
4 P-Xylenenol 페놀 노볼락 수지 (메이다 화약 (주)); 연화점 65℃; -OH 당량 175g/eq.4 P-Xylenenol phenol novolak resin (Meida Gunpowder Co., Ltd.); Softening point 65 ° C; -OH equivalent 175 g / eq.
5 디아미노실리콘 오일 (diaminosilicone oil).5 diaminosilicone oil.
6 r-글리시딜프로필렌트리메톡시실란 (r-glycidyl propylenetrimethoxy silane).6 r-glycidyl propylenetrimethoxy silane.
이렇게 제조된 에폭시 수지 조성물의 물성을 조사하여 하기 표 3에 나타내었다.The physical properties of the epoxy resin composition thus prepared were investigated and shown in Table 3 below.
이상에서 살펴본 바와 같이, 본 발명의 에폭시 수지 조성물은 저응력으로 고온 내습성, 내크랙성 및 열적 응력이 우수하고, 부착력이 높은 고신뢰성이 높아 반도체 봉지로 매우 유용하다.As described above, the epoxy resin composition of the present invention is very useful as a semiconductor encapsulation having high stress resistance, high temperature resistance, crack resistance and thermal stress with high stress, and high reliability with high adhesion.
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JPH01240556A (en) * | 1988-03-22 | 1989-09-26 | Toshiba Corp | Epoxy resin composition for semiconductor sealing use |
JPH0234657A (en) * | 1988-07-22 | 1990-02-05 | Matsushita Electric Works Ltd | Epoxy resin composition for semiconductor sealing |
US5258426A (en) * | 1989-02-23 | 1993-11-02 | Kabushiki Kaisha Toshiba | Semiconductor device encapsulant |
JPH07300517A (en) * | 1994-05-06 | 1995-11-14 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
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KR20000046309A (en) | 2000-07-25 |
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