KR101669338B1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same - Google Patents
Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same Download PDFInfo
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Abstract
The present invention relates to an epoxy resin composition for semiconductor device encapsulation comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a fluorosilicone compound represented by the following formula (6)
[Chemical Formula 6]
Wherein R 1 is one of F, CH 2 F, CHF 2 and CF 3 and R 2 , R 3 , R 4 , R 5 , R 6, R 7 , R 8 , R 9 and R 10 are each independently a substituted or unsubstituted alkyl group of C1 to C6, x is from 0 to 30, y is 1 to 30, x + y is an integer of more than 10).
Description
TECHNICAL FIELD The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed by using the same.
A sealing molding method for a semiconductor element using an epoxy resin composition for sealing a semiconductor element is generally a transfer molding using a tablet in which an epoxy composition is formed into a cylindrical shape. Recently, sealing by compression molding has been studied as a new molding method. This is because the macro flow of the molten resin is smaller than that in the conventional transfer molding, and therefore, a semiconductor device in which a lead frame, a circuit board and a semiconductor element are connected by a fine pitch wire, a long wire, , Which is attracting attention as a method capable of minimizing the wire sweep.
As a technique for sealing the semiconductor element by compression molding, there are a method of sealing the resin as a resin by compression molding while decompressing the inside of the mold, a method of using a molding material for sealing which is formed into a pellet or sheet in a thickness of 3.0 mm or less, A method in which a resin composition is supplied to a cavity and the resin composition is melted to immerse the semiconductor element, cure it, and seal it.
Voids and leaks are generated by the phenomenon that the epoxy resin composition swells during the compression molding, and the moldability and the reliability are frequently caused, and therefore, the moldability and reliability are required to be improved.
In this regard, Korean Patent Laid-Open Publication No. 2011-0104507 discloses an epoxy resin composition for encapsulating a semiconductor in a granular form, a semiconductor device using the same, and a method for manufacturing a semiconductor device.
An object of the present invention is to provide an epoxy resin composition for semiconductor device encapsulation which can reduce the occurrence of voids and leaks of epoxy resin during compression molding, thereby improving moldability and reliability.
Another object of the present invention is to provide a semiconductor device which is sealed using the epoxy resin composition.
(A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a fluorosilicic compound represented by the following formula (6) Can:
[Chemical Formula 6]
Wherein R 1 is one of F, CH 2 F, CHF 2 and CF 3 and R 2 , R 3 , R 4 , R 5 , R 6, R 7 , R 8 , R 9 and R 10 X is 0 to 30, y is 1 to 30, and x + y is an integer of 10 or more.
In the formula 6 R 2, R 3, R 4, R 5, R 6, R 7, R 8, R 9, and R 10 are each independently CH 3, CH 2 F, CHF 2, and CF 3 one Lt; / RTI >
The fluorosilicone compound may be contained in an amount of 0.6 to 1.4 wt% of the epoxy resin composition for sealing a semiconductor device.
The epoxy resin composition for semiconductor device encapsulation may comprise 2 to 15 wt% of the epoxy resin, 0.5 to 13 wt% of the curing agent, 72 to 95 wt% of the inorganic filler, and 0.6 to 1.4 wt% of the fluorosilicone compound .
The epoxy resin composition for semiconductor device encapsulation may further comprise a curing accelerator.
The epoxy resin composition for sealing a semiconductor device may further include at least one of a colorant and a coupling agent.
The semiconductor device, which is another aspect of the present invention, can be sealed with the above epoxy resin composition.
The present invention provides an epoxy resin composition for semiconductor device encapsulation which improves moldability and reliability by reducing the occurrence of voids and leaks in epoxy resin during compression molding, and a sealed semiconductor device using the epoxy resin composition.
Fig. 1 is a photograph of a specific example in the case where a void is not generated in a void evaluation (moldability test).
Fig. 2 is a photograph of a concrete example in the case where a void is generated in a void evaluation (moldability test).
An epoxy resin composition for semiconductor device encapsulation which is one aspect of the present invention comprises (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a fluorosilicone compound.
(A) an epoxy resin
And is not particularly limited as long as it is an epoxy resin generally used for sealing semiconductor devices. In an embodiment, an epoxy compound containing two or more epoxy groups in a molecule can be used. Examples of such epoxy resins include epoxy resins obtained by epoxidation of condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, multifunctional epoxy resins, naphthol novolak type epoxy resins Novolak type epoxy resins such as bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl epoxy resin, dicyclopentadiene epoxy resin, etc. .
In one embodiment, a phenolic aralkyl type epoxy resin having a novolak structure including a biphenyl derivative represented by the following formula (1) as an epoxy resin and a biphenyl type epoxy resin represented by the following formula (2)
[Chemical Formula 1]
(In the above formula (1), the average value of n is 1 to 7.)
(2)
(Wherein R is an alkyl group having 1 to 4 carbon atoms, and the average value of n is 0 to 7.)
Preferably, R is a methyl group or an ethyl group, more preferably a methyl group.
The phenol aralkyl type epoxy resin of formula (1) is based on a phenol skeleton and forms a structure having biphenyls in the middle thereof. Thus, it has excellent hygroscopicity, toughness, oxidation resistance and crack resistance, and has low crosslinking density. There is an advantage that the flame resistance can be secured to a certain level by itself while forming a char. The biphenyl-type epoxy resin of Formula 2 is preferred from the viewpoint of enhancing the fluidity and reliability of the resin composition.
These epoxy resins may be used alone or in combination, and may be added to an epoxy resin by addition reaction with other components such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent and a melamine master batch Can also be used. In order to improve the moisture resistance, it is preferable to use a resin having a low chloride ion, sodium ion, and other ionic impurities contained in the epoxy resin.
The epoxy resin may be used in an amount of 2 to 15% by weight, preferably 3 to 15% by weight, and more preferably 3 to 12% by weight in the epoxy resin composition for encapsulating semiconductor devices. The flowability, flame retardancy, and reliability of the epoxy resin composition may be good within the above range.
(B) Curing agent
The curing agent is generally used for sealing semiconductor devices and is not particularly limited as long as it has two or more reactors.
Specific examples thereof include phenol aralkyl type phenol resin, phenol novolac type phenol resin, xylok type phenol resin, cresol novolak type phenol resin, naphthol type phenol resin, terpene type phenol resin, Novolac phenol resins synthesized from bisphenol A and resole, polyhydric phenol compounds including tris (hydroxyphenyl) methane, dihydroxybiphenyl, acid anhydrides including maleic anhydride and phthalic anhydride, And aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone. Particularly preferred examples of the curing agent include phenol aralkyl type phenol resins having a novolac structure containing a biphenyl derivative in the molecule represented by the following formula (3), xylok type phenol resins represented by the following formula (4) And a multifunctional phenol resin.
(3)
(In the above formula (3), the average value of n is 1 to 7.)
[Chemical Formula 4]
(The average value of n in the above formula (4) is 0 to 7.)
[Chemical Formula 5]
(The average value of n in the above formula (5) is 1 to 7.)
The phenol aralkyl type phenol resin of formula (3) reacts with the phenol aralkyl type epoxy resin to form a carbon layer (char), thereby blocking the transfer of heat and oxygen to the periphery, thereby achieving flame retardancy. The xylyl phenol resin of Formula 4 is preferred in terms of enhancing the fluidity and reliability of the resin composition. The multifunctional phenol resin of Formula 5 is preferred in terms of reinforcing the high temperature bending property of the epoxy resin composition.
These curing agents may be used alone or in combination, and they may also be used as an additive compound prepared by subjecting a curing agent to a linear reaction such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, and a stress relieving agent and a melt master batch.
The curing agent may be used in an amount of 0.5 to 13% by weight, preferably 1 to 10% by weight, and more preferably 2 to 8% by weight in the epoxy resin composition for encapsulating semiconductor devices. In the above range, unreacted epoxy groups and phenolic hydroxyl groups are not generated in a large amount, so that reliability can be excellent.
(C) Inorganic filler
The inorganic filler is a material used for improvement of mechanical properties and low stress of the epoxy resin composition. Examples of commonly used examples include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide and glass fiber.
In the specific example, fused silica having a low coefficient of linear expansion is used for low stress. The fused silica refers to amorphous silica having a true specific gravity of 2.3 or less and includes amorphous silica obtained by melting crystalline silica or synthesized from various raw materials. Although the shape and the particle diameter of the fused silica are not particularly limited, the fused silica containing 50 to 99% by weight of spherical fused silica having an average particle diameter of 5 to 30 탆 and the spherical fused silica having an average particle diameter of 0.001 to 1 탆 in an amount of 1 to 50% It is preferable that the mixture is contained in an amount of 40 to 100% by weight based on the total filler. The spherical fused silica may contain conductive carbon as a foreign substance on the surface of the silica, but the incorporation of a polar foreign substance may cause the spherical fused silica to be in contact with the surface of the silica, It is also important to choose a small number of substances.
The amount of the inorganic filler to be used varies depending on required properties such as moldability, low stress, and high temperature strength. In the specific example, 72 to 95% by weight, preferably 75 to 92% by weight, of the epoxy resin composition for sealing a semiconductor device can be used. Within this range, it has excellent bending properties and reliability of the package, and is excellent in fluidity and moldability.
(D) a fluorosilicone compound
The fluorosilicone compound may be represented by the following formula (6)
[Chemical Formula 6]
Wherein R 1 is one of F, CH 2 F, CHF 2 and CF 3 and R 2 , R 3 , R 4 , R 5 , R 6, R 7 , R 8 , R 9 and R 10 X is 0 to 30, y is 1 to 30, and x + y is an integer of 10 or more.
In the above "substituted or unsubstituted", "substituted" means that at least one hydrogen atom of the functional group is substituted with fluoro (F).
In one embodiment R 2, R 3, R 4 , R 5, R 6, R 7, R 8, R 9, and R 10 are each independently CH 3, CH 2 F, CHF 2, and CF 3 one Lt; / RTI >
For example, the fluorosilicone compound may be a fluorosilicone compound represented by the following formulas (6a) to (6e).
[Chemical Formula 6a]
[Formula 6b]
[Chemical Formula 6c]
[Chemical formula 6d]
[Formula 6e]
According to another embodiment, the epoxy resin composition for sealing a semiconductor element may contain 0.6 to 1.4% by weight, preferably 0.8 to 1.3% by weight, more preferably 0.87 to 1.27% by weight of the fluorosilicone compound in the epoxy resin composition based on solid content %. ≪ / RTI > Within the above range, voids and leaks of the epoxy resin during compression molding can be reduced, and moldability and reliability can be improved.
Hardening accelerator
The epoxy resin composition for sealing a semiconductor device may further comprise a curing accelerator.
The curing accelerator is a substance that promotes the reaction between the epoxy resin and the curing agent. For example, tertiary amines, organometallic compounds, organic phosphorus compounds, imidazoles, and boron compounds can be used.
Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris ) Phenol and tri-2-ethylhexyl acid salt. Organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organic phosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine Pin-1,4-benzoquinone adducts and the like. Imidazoles include, but are not limited to, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, Imidazole and the like. Examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine , Tetrafluoroborane amine, and the like. In addition, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene: DBN), 1,8-diazabicyclo [5.4. 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolak resin salts.
Particularly preferable examples of the curing accelerator include an amine curing accelerator, an organic phosphorus compound, an imidazole-based curing accelerator, or a boron compound, either singly or in combination. As the curing accelerator, it is also possible to use an adduct made by reacting with an epoxy resin or a curing agent.
The curing accelerator may be used in an amount of 0.01 to 2% by weight, preferably 0.02 to 1.5% by weight, more preferably 0.05 to 1% by weight based on the total weight of the epoxy resin composition. In the above-mentioned range, the curing of the composition is promoted and the curing degree is good.
additive
In addition to the above components, additives such as a coupling agent, a colorant, a releasing agent, a stress relieving agent, a crosslinking promoter, and a leveling agent may further be added as additives.
As the coupling agent, a silane coupling agent may be used. As the silane coupling agent, epoxy silane, aminosilane, mercaptosilane, alkylsilane, alkoxysilane, etc. may be used. These may be used singly or in combination. In embodiments, mercaptosilane, alkoxysilane and amine silane can be used simultaneously.
As the coloring agent, carbon black or an organic or inorganic dye can be used, but it is not limited thereto.
As the release agent, at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid, and natural fatty acid metal salt may be used.
The stress relieving agent may be at least one selected from the group consisting of modified silicone oil, silicone elastomer, silicone powder, and silicone resin, but is not limited thereto.
The additive may be contained in an amount of 0.1 to 5.5% by weight in the epoxy resin composition.
The epoxy resin composition may further comprise a flame retardant. Non-halogen organic or inorganic flame retardants may be used as the flame retardant. Examples of the non-halogenated organic or inorganic flame retardant include, but are not limited to, flame retardants such as phosphazene, zinc borate, aluminum hydroxide and magnesium hydroxide.
The flame retardant may vary depending on the content of the inorganic filler and the type of the phenol-based curing agent, so that the flame retardant may be contained in an appropriate ratio depending on the flame retardancy of the epoxy resin composition. The content of the flame retardant may be 10 wt% or less, preferably 8 wt% or less, more preferably 5 wt% or less in the epoxy resin composition.
The epoxy resin composition of the present invention can reduce the swelling property of the epoxy resin during compression molding, and can improve moldability and reliability.
The method for producing the epoxy resin composition of the present invention described above is not particularly limited. For example, the respective components contained in the composition are homogeneously mixed using a Henschel mixer or a Lodige mixer, melt-kneaded at 90 to 120 ° C in a roll mill or kneader, and then cooled and pulverized . A method of sealing a semiconductor element using the epoxy resin composition is most commonly used for a low pressure transfer molding method. However, it can also be formed by a method such as a compression molding method, an injection molding method, or a casting molding method. A method of manufacturing a semiconductor device comprising a lead frame, an iron lead frame, or a lead frame pre-plated with one or more materials selected from the group consisting of nickel, copper, and palladium on the lead frame, Can be produced.
The present invention can provide a sealed semiconductor device using the above-described epoxy resin composition.
Here, the sealing process is not particularly limited, and a molding machine is appropriately selected in accordance with a molding method, a semiconductor device is sealed with an epoxy resin composition and then cured by using a molding machine, and after the molded semiconductor device package is completed, A semiconductor device can be provided. The sealing molding temperature and time are preferably from 160 to 190 DEG C for 40 to 300 seconds, and the temperature and time for post-curing are preferably from 160 to 190 DEG C for from 0 to 8 hours.
Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.
The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.
Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
Specific specifications of the components used in Examples and Comparative Examples are as follows.
(A) an epoxy resin
(a1) phenol aralkyl type epoxy resin: NC-3000 product manufactured by Nippon Kayaku was used.
(a2) Biphenyl type epoxy resin: YX-4000H manufactured by Japan Epoxy Resin was used.
(B) Curing agent
(b1) Xylock type phenol resin: HE100C-10 (Air Water) was used.
(b2) Phenol aralkyl type phenol resin: MEH-7851SS manufactured by Meiwa kasei was used.
(C) Inorganic filler: Silica having an average particle diameter of 7 탆 was used.
(D) a fluorosilicone compound
(d1) to (d5) used were fluorosilicone compounds represented by the following formula (6a). The content thereof is as shown in Table 1 below.
[Chemical Formula 6a]
(d6) and (d7) used were fluorosilicone oil (low molecular weight) of the following formula (7). The content thereof is as shown in Table 2 below.
(7)
(d8) and (d9) used silicone oil of the following formula (methyl group). The content thereof is as shown in Table 2 below.
[Chemical Formula 8]
(E) Curing accelerator
Tpp-k manufactured by Hokko Chemical, a triphenylphosphine-based curing accelerator, was used.
(F) Coupling agent
(f1), mercaptopropyltrimethoxysilane KBM-803 (Shin Etsu Silicon), (f2) methyltrimethoxysilane SZ-6070 (Dow Corning chemical), (f3) amine-based silane KBM-573 ) Were used.
(G) Additive
(g1) Carbon black MA-600 (Matsusita Chemical) was used as a colorant.
(g2) Carnauba wax as a release agent was used.
Examples and Comparative Examples
Each of the above components was weighed according to the composition (unit: wt%) shown in Tables 1 and 2 below, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. Thereafter, the mixture was melt kneaded at 95 DEG C using a continuous kneader, followed by cooling and pulverization, thereby preparing an epoxy resin composition for sealing a semiconductor device.
division
(D)
(F)
division
(D)
(F)
(G)
The physical properties of the epoxy compositions prepared in Examples and Comparative Examples were evaluated by the following measuring methods.
(1) Spiral flow: Using a low pressure transfer molding machine, an epoxy resin composition was injected into a mold for spiral flow measurement according to EMMI-1-66 under the conditions of a mold temperature of 175 캜, an injection pressure of 9 MPa, and a curing time of 90 seconds, (Flow length) (unit: inch) was measured. The higher the measured value, the better the fluidity.
(2) Void evaluation (Moldability test): A BGA (Ball Grid Array) semiconductor manufactured by using an epoxy resin composition at a pressure of 70 kg / cm 2, a temperature of 175 캜, and a curing time of 90 seconds in a PMC 1040 compression molding type molding machine manufactured by TOWA The appearance of the molded article of the element was observed with an optical microscope and naked eyes.
Fig. 1 is a photograph of a specific example in which no void is generated in the Void evaluation (moldability test), and Fig. 2 is a photograph of a concrete example in the case where a void is generated.
(3) Evaluation of Leakage (Reliability Test): The epoxy resin composition was used in a PMC1040 compression molding type molding machine of TOWA under the conditions of a pressure of 70 kg / cm 2, a temperature of 175 ° C, a curing time of 90 seconds, The length was measured. If the length is 0.5 mm or more, it affects the circuit and affects semiconductor reliability.
Evaluation items
Basic Properties
Formability
responsibility
Spiral flow
Occurrences
Number of elements
Occurrences
Number of elements
As shown in Table 2, in Examples 1 to 5, the epoxy resin composition for sealing a semiconductor device comprising a fluorosilicone compound according to the present invention is excellent in basic properties and has high reliability and moldability at the time of sealing semiconductor devices Can be produced.
On the other hand, Comparative Examples 1 to 5 are excellent in fluidity, but it can be confirmed that there is a problem of reliability and moldability in sealing semiconductor devices.
While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are in all respects illustrative and not restrictive.
Claims (7)
(B) a curing agent,
(C) an inorganic filler, and
(D) an epoxy resin composition for sealing semiconductor devices comprising a fluorosilicone compound represented by the following formula (6):
[Chemical Formula 6]
Wherein R 1 is one of F, CH 2 F, CHF 2 and CF 3 and R 2 , R 3 , R 4 , R 5 , R 6, R 7 , R 8 , R 9 and R 10 are each independently a substituted or unsubstituted alkyl group of C1 to C6, x is from 0 to 30, y is 1 to 30, x + y is an integer of more than 10).
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| US5734001A (en) * | 1994-05-30 | 1998-03-31 | Daikin Industries, Ltd. | Fluorosilicone compound and composition containing the same |
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