KR102623238B1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same - Google Patents

Abstract

An epoxy resin composition for sealing a semiconductor device comprising an epoxy resin, a curing agent, and an inorganic filler, wherein the curing agent includes a phenolic curing agent of Chemical Formula 2, and a semiconductor device sealed using the same are provided.

Description

Epoxy resin composition for sealing semiconductor devices and semiconductor devices sealed using the same {EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ENCAPSULATED USING THE SAME}

The present invention relates to an epoxy resin composition for sealing semiconductor devices and a semiconductor device sealed using the same.

Recently, as portable digital devices with small and thin designs have become popular, semiconductor packages are being made thinner and smaller in order to increase the packaging efficiency per unit volume of the semiconductor package mounted inside. As the package becomes thinner and shorter, the difference in thermal expansion coefficient between the semiconductor chip, lead frame, and epoxy resin composition that makes up the semiconductor package, and the warpage of the semiconductor package due to heat shrinkage and curing shrinkage of the epoxy resin composition that seals the semiconductor package. ) A problem is occurring.

If a bending problem occurs in the semiconductor package, soldering defects and subsequent electrical defects may occur during soldering in the semiconductor post-process, so controlling the bending characteristics has recently become an important task in the development of sealing materials. In particular, due to the trend of decreasing the proportion of sealing materials inside semiconductor packages due to the thinning, thinning, and shortening of semiconductor packages, it is necessary to develop sealing materials with a high shrinkage rate to control the warpage of the entire semiconductor package. However, if the content of inorganic filler inside the sealant is lowered or the proportion of resin with a large equivalent weight is increased in order to satisfy high shrinkage properties, flame retardant properties may not be achieved or problems in reliability may occur.

The purpose of the present invention is to provide an epoxy resin composition for sealing semiconductor devices that has a high cure shrinkage rate and a high coefficient of thermal expansion (CTE).

Another object of the present invention is to provide an epoxy resin composition for sealing semiconductor devices that reduces warpage of light, thin, and shortened semiconductor packages.

Another object of the present invention is to provide an epoxy resin composition for sealing semiconductor devices with significantly improved crack resistance, reliability, and formability.

The epoxy resin composition for sealing semiconductor devices of the present invention includes an epoxy resin, a curing agent, and an inorganic filler, and the curing agent includes a phenolic curing agent of the following formula (2):

[Formula 2]

(In Formula 2 above,

X is a single bond or a straight-chain or branched alkylene group having 1 to 4 carbon atoms,

R ¹ and R ² are each independently a straight-chain or branched alkyl group or allyl group having 2 to 12 carbon atoms,

R ³ and R ⁴ are each independently hydrogen, halogen, amino group (-NH ₂ ), cyano group (-CN), hydroxyl group (-OH), substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, substituted or unsubstituted. A cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms,

a is an integer from 1 to 4, c is an integer from 0 to 3, a + c is 4

b is an integer from 1 to 3, d is an integer from 0 to 2, b + d is 3,

n has an average value of 0 to 10).

The semiconductor device of the present invention is sealed with the epoxy resin composition for sealing semiconductor devices of the present invention.

The present invention provides an epoxy resin composition for sealing semiconductor devices with a high cure shrinkage rate and a high thermal expansion coefficient.

The present invention provides an epoxy resin composition for sealing semiconductor devices that reduces warpage of light, thin, and simplified semiconductor packages.

The present invention provides an epoxy resin composition for sealing semiconductor devices with significantly improved crack resistance, reliability, and moldability.

In this specification, when describing a numerical range, “X to Y” means more than X and less than or equal to Y.

In the present specification, "substituted" in "substituted or unsubstituted" means that one or more hydrogen atoms in the functional group are hydroxyl group, amino group, nitro group, cyano group, alkyl group having 1 to 20 carbon atoms, or 1 to 20 carbon atoms. Haloalkyl group, aryl group with 6 to 30 carbon atoms, heteroaryl group with 3 to 30 carbon atoms, cycloalkyl group with 3 to 10 carbon atoms, heterocycloalkyl group with 3 to 10 carbon atoms, carbon It means substituted with an arylalkyl group having 7 to 30 carbon atoms or a heteroalkyl group having 1 to 30 carbon atoms.

The epoxy resin composition for sealing semiconductor devices of the present invention includes an epoxy resin, a curing agent, and an inorganic filler, and the curing agent includes a phenolic curing agent of the following formula (2). The composition has a high curing shrinkage rate and a high thermal expansion coefficient, lowering the warpage of light, thin, and shortened semiconductor packages, and significantly improving crack resistance, reliability, and formability.

epoxy resin

Epoxy resins have two or more epoxy groups in the molecule, and include biphenyl-type epoxy resin, bisphenol-A-type epoxy resin, bisphenol-F-type epoxy resin, phenol novolac-type epoxy resin, tert-butyl catechol-type epoxy resin, and naphthalene-type epoxy resin. , glycidylamine type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, linear aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring-containing epoxy resin, cyclohexanedimethanol type epoxy resin. , trimethylol-type epoxy resin, halogenated epoxy resin, etc. Epoxy resins may be included alone or in a mixture of two or more types. For example, the epoxy resin may be a phenol aralkyl type epoxy resin.

In one embodiment, the phenol aralkyl type epoxy resin may include an epoxy resin of the following formula (1):

[Formula 1]

(In Formula 1, the average value of n is 1 to 7).

The phenol aralkyl type epoxy resin may be included in an amount of 70 to 100% by weight based on the total epoxy resin in the composition. Within the above range, the curability of the composition may not deteriorate.

The epoxy resin may be included in an amount of 2 to 17% by weight based on solid content in the epoxy resin composition. Within the above range, the curability of the composition may not deteriorate.

hardener

The curing agent includes a curing agent of the following formula (2). The curing agent of Formula 2 is a phenolic curing agent, which can increase the curing shrinkage rate and thermal expansion coefficient of the composition, reduce warpage of light, thin, and shortened semiconductor packages, and significantly improve crack resistance, reliability, and formability:

[Formula 2]

(In Formula 2 above,

X is a single bond or a straight-chain or branched alkylene group having 1 to 4 carbon atoms,

R ¹ and R ² are each independently a straight-chain or branched alkyl group or allyl group having 2 to 12 carbon atoms,

R ³ and R ⁴ are each independently hydrogen, halogen, amino group (-NH ₂ ), cyano group (-CN), hydroxyl group (-OH), substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, substituted or unsubstituted. A cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms,

a is an integer from 1 to 4, c is an integer from 0 to 3, a + c is 4

b is an integer from 1 to 3, d is an integer from 0 to 2, b + d is 3,

n has an average value of 0 to 10).

Preferably,

Preferably, R ¹ and R ² may each independently be a straight-chain or branched alkyl group or an allyl group having 4 to 10 carbon atoms, more preferably a straight-chain or branched alkyl group or an allyl group having 6 to 8 carbon atoms. there is.

Preferably, R ³ and R ⁴ may each independently be hydrogen.

Preferably, n may have an average value of 1 to 4.

In one embodiment, the curing agent of Formula 2 may include a phenolic curing agent of Formula 3:

[Formula 3]

(In Formula 3, R ¹ , R ² , R ³ , R ⁴ , X, and n are each as defined in Formula 2, c1 is 3, and d1 is 2). In Formula 3, R ³ may be the same or different. In Formula 3, R ⁴ may be the same or different.

The phenolic curing agent of Formula 2 may have a softening point of 50 to 120°C. Since appropriate resin viscosity can be secured within the above range, fluidity may not be deteriorated.

The equivalent weight of the phenolic hydroxyl group included in the phenolic curing agent of Formula 2 may be 90 to 300 g/eq.

The composition ratio of the epoxy resin and the phenolic curing agent of Formula 2 in the epoxy resin composition may be 0.5:1 to 2:1 in the ratio of the equivalent weight of the epoxy group in the epoxy resin to the equivalent weight of the phenolic hydroxyl group contained in the phenolic curing agent of Formula 2. Within the above range, the fluidity of the resin composition can be secured and the curing time may not be delayed. Preferably, the equivalent ratio may be 0.8:1 to 1.6:1.

One or more types of curing agents of Formula 2 may be included in the epoxy resin composition, and may be included in an amount of 2 to 12% by weight, preferably 2 to 10% by weight, based on solid content in the epoxy resin composition. Within the above range, curing shrinkage and thermal expansion coefficient can be increased, curability of the composition may not deteriorate, and reliability can be good because large amounts of unreacted epoxy groups and phenolic hydroxyl groups are not generated.

The curing agent of Formula 2 can be prepared by conventional methods known to those skilled in the art.

The curing agent of Formula 2 may be included in an amount of 70 to 100% by weight based on the total curing agent in the composition. Within the above range, the curability of the composition may not deteriorate.

In addition to the curing agent of Chemical Formula 2, the curing agent may further include a curing agent with a structure different from Chemical Formula 2. For convenience, the curing agent of Formula 2 is referred to as the first curing agent, and the curing agent having a structure different from that of Formula 2 is referred to as the second curing agent.

The second curing agent is a multifunctional phenol resin, a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a xylok type phenol resin, a cresol novolak type phenol resin, a naphthol type phenol resin, a terpene type phenol resin, a terpene modified phenol resin, polyaromatic phenol resin, dicyclopentadiene-based phenol resin, dicyclopentadiene-based modified phenol resin, novolak-type phenol resin synthesized from bisphenol A and resol; polyhydric phenol compounds including tris(hydroxyphenyl)methane and dihydroxybiphenyl; acid anhydrides including maleic anhydride and phthalic anhydride; and aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone.

The curing agent may be included in the composition as the curing agent alone, or may be manufactured in the form of an addition compound prepared by pre-reacting an epoxy resin, curing catalyst, or other additives, such as a melt master batch.

The curing agent may be included in an amount of 2 to 12% by weight, preferably 2 to 10% by weight, based on solid content in the epoxy resin composition. Within the above range, the curability of the composition may not deteriorate, and reliability may be good because large amounts of unreacted epoxy groups and phenolic hydroxyl groups are not generated.

inorganic filler

Inorganic fillers can improve the mechanical properties and reduce stress of the epoxy resin composition. Examples of inorganic fillers may include one or more of fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, and glass fiber. there is.

Preferably, the inorganic filler may include fused silica with a low coefficient of linear expansion to reduce stress. Fused silica refers to amorphous silica with a true specific gravity of 2.3 or less, and may include amorphous silica made by melting crystalline silica or synthesized from various raw materials. The shape and particle size of the fused silica are not particularly limited, but may be fused silica containing 50 to 99% by weight of spherical fused silica with an average particle diameter of 5 to 30 ㎛ and 1 to 50% by weight of spherical fused silica with an average particle diameter of 0.001 to 1 ㎛. It is better to include the mixture in an amount of 40 to 100% by weight of the total inorganic filler. In addition, the maximum particle size can be adjusted to any of 45㎛, 55㎛, and 75㎛ according to the application.

The amount of inorganic filler used varies depending on required physical properties such as formability, low stress, and high temperature strength. In one embodiment, the inorganic filler may be included in 70 to 95% by weight of the epoxy resin composition. Within the above range, flame retardancy, fluidity, and reliability of the epoxy resin composition can be secured.

The epoxy resin composition may further include a curing catalyst.

curing catalyst

The curing catalyst may be a tertiary amine compound, an organometallic compound, an organophosphorus compound, an imidazole-based compound, or a boron compound. Tertiary amine compounds include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri(dimethylaminomethyl)phenol, 2-2-(dimethylaminomethyl)phenol, 2,4,6-tris(diamino) These include methyl)phenol and tri-2-ethylhexyl acid salt. Organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, and nickel acetylacetonate. The organophosphorus compound may be tris-4-methoxyphosphine, triphenylphosphine, triphenylphosphinetriphenylborane, triphenylphosphine-1,4-benzoquinone adduct, etc. Imidazole-based compounds include 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2 - methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, and 2-hepta. Decylimidazole, etc. Boron compounds include triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroboran-n-hexylamine, trifluoroboran monoethylamine, tetrafluoroboranetriethylamine, and tetrafluoroboranamine. . In addition, 1,5-diazabicyclo[4.3.0]non-5-ene (1,5-diazabicyclo[4.3.0]non-5-ene: DBN), 1,8-diazabicyclo[5.4. 0]undec-7-ene (1,8-diazabicyclo[5.4.0]undec-7-ene: DBU) and phenol novolak resin salt can be used.

It is also possible to use an adduct made by pre-reacting an epoxy resin or a curing agent as a curing catalyst.

The curing catalyst may be included in an amount of 0.01 to 5% by weight in the epoxy resin composition. Within the above range, the curing reaction time is not delayed and the fluidity of the composition can be secured.

The epoxy resin composition may further include common additives that can be included in epoxy resin compositions for sealing semiconductor devices. In embodiments, the additive may include one or more of a coupling agent, release agent, colorant, stress reliever, crosslinking enhancer, leveling agent, or flame retardant.

The coupling agent is used to improve the interfacial strength by reacting between the epoxy resin and the inorganic filler, and may be, for example, a silane coupling agent. Specific examples of the silane coupling agent include epoxy silane, amino silane, ureido silane, mercapto silane, and alkyl silane. The coupling agents can be used alone or in combination.

Preferably, the coupling agent may include a coupling agent of the following formula (4):

[Formula 4]

(In Formula 4 above,

R ⁵ , R ⁶ , R ⁸ , and R ⁹ are each independently hydrogen, a monovalent aliphatic hydrocarbon group having 1 to 30 carbon atoms, or a monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms,

R ⁷ is each independently a divalent hydrocarbon group having 1 to 20 carbon atoms,

e is an integer from 1 to 3).

The coupling agent of Formula 4 can improve the fluidity of the composition.

The coupling agent may be included in an amount of 0 to 5% by weight, preferably 0.01 to 3% by weight, and more preferably 0.1 to 1% by weight in the epoxy resin composition for encapsulating semiconductor devices. Within the above range, the strength of the cured epoxy resin composition can be improved.

The mold release agent may be one or more selected from the group consisting of paraffin-based wax, ester-based wax, higher fatty acids, higher fatty acid metal salts, natural fatty acids, and natural fatty acid metal salts. The mold release agent may be included in 0.1 to 1% by weight of the epoxy resin composition.

The colorant may be carbon black. The colorant may be included in 0.1 to 1% by weight of the epoxy resin composition.

The stress reliever may be one or more selected from the group consisting of modified silicone oil, silicone elastomer, silicone powder, and silicone resin, but is not limited thereto. The stress reliever is present in an amount of 0 to 2% by weight, for example 0 to 1% by weight, for example 0.1 to 1% by weight of the epoxy resin composition. It may be contained.

Flame retardants may include halogen-based or non-halogen-based, inorganic or organic flame retardants. Non-halogen-based inorganic or organic flame retardants may include, but are not limited to, one or more of antimony trioxide, phosphazene, zinc borate, aluminum hydroxide, and magnesium hydroxide.

The flame retardant is present in an amount of 0 to 2% by weight, for example 0 to 1.5% by weight, for example 0.1 to 1.5% by weight of the epoxy resin composition. It may be contained.

Additives may be included in an amount of 0.1 to 5% by weight, for example, 0.1 to 3% by weight of the epoxy resin composition.

The method of manufacturing the epoxy resin composition is not particularly limited, but each component included in the composition is uniformly mixed using a Henschel mixer or Rodige mixer, and then melt-kneaded at 90°C to 120°C using a roll mill or kneader. and can be manufactured through cooling and grinding processes.

The semiconductor device of the present invention is sealed using the epoxy resin composition for sealing semiconductor devices of the present invention. The method of sealing a semiconductor device using the epoxy resin composition of the present invention may include transfer molding, injection molding, casting molding, compression molding, etc., but is not necessarily limited thereto. In one embodiment, it may be sealed using a low pressure transfer molding method. In other embodiments, sealing may be achieved by compression molding.

Hereinafter, the configuration and operation of the present invention will be described in more detail through preferred embodiments of the present invention. However, this is presented as a preferred example of the present invention and should not be construed as limiting the present invention in any way.

Specific specifications of the ingredients used in the following examples and comparative examples are as follows.

(A) Epoxy resin: NC-3000 (phenol aralkyl type epoxy resin, (Nippon Kayaku)

(B) Curing agent: (B1) to (B4) are KAF-F series (Kolon industries)

⁽ _B1 ) ^A curing agent in ^which in Formula ³ ,

( _B2 ) ^A curing ^agent in Formula ^{3 wherein}

⁽ B3) ^A curing agent in _which in ^{Formula 3} ,

⁽ _B4 ) A curing agent ^{in which} in Formula ³ ,

(b1)MEH-7500-S (multifunctional phenolic resin, Meiwa)

(b2)MEH-7800-S (Xyllock type phenolic resin, Meiwa company)

(b3)MEH-7851-S (phenol aralkyl type phenol resin, Meiwa company)

⁽ b4) ^A curing agent ⁱⁿ _which in Formula ³ ,

(b5) In Formula 3, a curing agent in which X is -CH ₂ -, R ¹ , R ² , R ³ , and R ⁴ are each hydrogen

(C) Inorganic filler: a mixture of spherical fused silica with an average particle diameter of 18㎛ and spherical fused silica with an average particle diameter of 0.5㎛ at a weight ratio of 9:1.

(D) Curing catalyst: Triphenyl phosphine (Hokko)

(E) Coupling agent: KBM-573 (Shinetsu, N-phenyl-3-aminopropyltrimethoxysilane)

(F) Flame retardant: Antimony trioxide (Sigma Aldrich)

(G) Colorant: Carbon black (MA-600, Matsusita Chemical)

(H) Mold release agent: carnauba wax

Examples 1 to 4 and Comparative Examples 1 to 5

After uniformly mixing for 30 minutes at 25 to 30°C using a Henschel mixer (KEUM SUNG MACHINERY CO.LTD, KSM-22) according to the composition (unit: parts by weight) in Table 1 below, continuous kneader After melt-kneading at 90 to 110°C for 30 minutes, the mixture was cooled to 10 to 15°C and pulverized to prepare an epoxy resin composition for sealing semiconductor devices. In Table 1 below, “-” means that the corresponding ingredient is not included.

The following physical properties were evaluated for the prepared epoxy resin composition for sealing semiconductor devices, and the results are shown in Table 1 below.

(1) Fluidity (unit: inch): Using a low-pressure transfer molding machine, molding temperature 175℃, molding pressure 70kgf/cm ² , injection pressure 9MPa, curing time 90 seconds in mold for fluidity measurement according to EMMI-1-66. An epoxy resin composition for sealing semiconductor devices was injected and the flow length was measured. A higher flow length value means better fluidity.

(2) Curing shrinkage rate ( ^unit : %): Using an ASTM mold for producing flexural strength specimens, a molded specimen (width Х 12.6mm Х 6.4mm) was obtained. The obtained specimen was placed in an oven at 170 to 180°C to post-cure (PMC: post molding cure) for 4 hours, then cooled, and the horizontal length of the specimen was measured with a caliper. Cure shrinkage rate was calculated from Equation 1 below.

[Equation 1]

Curing shrinkage (%) = {｜C - D｜÷C} Х 100

(In Equation 1 above, C is the horizontal length of the specimen obtained by transfer molding pressing the epoxy resin composition at 175°C and 70kgf/cm ² ,

D is the horizontal length of the specimen after post-curing the specimen at 170 to 180°C for 4 hours and then cooling it).

(3) Warpage (unit: ㎛): Die (width x height x thickness, The chips (8mm Х 8mm Х 0.08mm) were mounted in two stages. Using compression mold equipment (PMC-1040, TOWA) The same amount of epoxy resin composition for semiconductor encapsulation of Examples and Comparative Examples was added to the mold equipment, and a semiconductor device was molded under the conditions of a molding thickness of 0.3 mm, a mold temperature of 175°C, a curing time of 100 seconds, and a molding pressure of 10 tons. Afterwards, it was subjected to a PMC (post mold curing) process at 175°C and 4 hours. Among these, 10 units were randomly selected and the warpage value was measured at 25°C using a warpage measurement device (Akrometrix, AXP).

(4) Reliability: A FBGA (Fine pitch Ball Grid Array) semiconductor package was assembled using the resin compositions of Examples and Comparative Examples and post-cured at 175°C for 4 hours. Then, it was dried at 125℃ for 24 hours, left for 168 hours under conditions of 85℃ and 85% relative humidity, and then subjected to IR reflow once at 260℃ for 30 seconds, repeating the preconditioning three times. After the conditions, the presence or absence of cracks was evaluated using C-SAM (C-Scanning Acoustic Microscopy), a non-destructive test. If no cracks occurred in the 12 evaluated semiconductor packages, it was recorded as good, and if any cracks occurred in the 12 evaluated semiconductor packages, it was recorded as bad.

(5) Thermal expansion coefficient, α1 (unit: ppm): The thermal expansion coefficient of the resin compositions of Examples and Comparative Examples was measured in the range of 40°C to 80°C using TMA (Thermal Mechanical Analyser) at a temperature increase rate of 10°C/min. .

Example Comparative example One 2 3 4 One 2 3 4 5 A 8.31 8.29 8.18 8.31 9.71 8.34 7.83 8.38 8.31 B B1 4.95 - - - - - - - - B2 - 4.97 - - - - - - - B3 - - 5.09 - - - - - - B4 - - - 4.95 - - - - - b1 - - - - 3.46 - - - - b2 - - - - - 4.91 - - - b3 - - - - - - 5.43 - - b4 - - - - - - - 4.87 - b5 - - - - - - - - 4.95 C 84 84 84 84 84 84 84 84 84 D 0.52 0.52 0.51 0.52 0.61 0.53 0.52 0.53 0.52 E 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 F One One One One One One One One One G 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 H 0.32 0.32 0.32 0.32 0.32 0.32 0.32 0.32 0.32 liquidity 80 81 78 86 75 77 78 82 77 Curing shrinkage rate 0.47 0.48 0.51 0.52 0.3 0.32 0.37 0.45 0.33 warp 15 18 30 31 -20 -7 2 10 -4 reliability Good Good Good Good Good Good error error error thermal expansion coefficient 15.5 15.7 16.1 16.2 14.2 14.4 14.3 14.5 14.4

As shown in Table 1, the epoxy resin composition for sealing semiconductor devices of the present invention has a high curing shrinkage rate, thereby reducing warpage of light, thin, and shortened semiconductor packages and improving crack resistance.

On the other hand, Comparative Examples 1 and 2, which used a multifunctional phenol resin and a xyllock-type phenol resin as phenolic curing agents, respectively, had a negative warpage value, which resulted in poor processability and low productivity. In addition, Comparative Example 3, which used a phenolic aralkyl-type phenol resin as the phenolic curing agent, and Comparative Example 4, which used a phenolic curing agent other than Formula 2, had a problem of poor reliability due to a decrease in adhesion caused by the properties of the curing agent. Comparative Example 5, which used a phenolic curing agent other than Formula 2, had a negative warpage value, which resulted in poor fairness, lower productivity, and lower reliability.

Simple modifications or changes to the present invention can be easily implemented by those skilled in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

Claims (7)

Contains 2 to 17% by weight of epoxy resin, 2 to 12% by weight of curing agent, 0.01 to 5% by weight of curing catalyst, and 70 to 95% by weight of inorganic filler,
An epoxy resin composition for sealing semiconductor devices, wherein the curing agent includes a phenolic curing agent of the following formula (3):
[Formula 3]

(In Formula 3 above,
X is a single bond or a straight-chain or branched alkylene group having 1 to 4 carbon atoms,
R ¹ and R ² are each independently a straight-chain or branched alkyl group or allyl group having 4 to 10 carbon atoms,
R ³ and R ⁴ are each independently hydrogen, halogen, amino group (-NH ₂ ), cyano group (-CN), hydroxyl group (-OH), substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, substituted or unsubstituted. A cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms,
c1 is 3, d1 is 2,
n has an average value of 1 to 4).
delete The epoxy resin composition for sealing semiconductor devices according to claim 1, wherein in Formula 3, X is a straight-chain or branched alkylene group having 1 to 4 carbon atoms.
delete delete delete A semiconductor device sealed using the epoxy resin composition for sealing semiconductor devices of claim 1 or 3.