KR101469265B1 - Epoxy resin composition for encapsulating semiconductor device, and semiconductor apparatus using the same - Google Patents

Abstract

(상기에서, R₁ 및 R₂는 각각 독립적으로 탄소 수 1~4의 알킬기, 탄소 수 6~12의 아릴기이며, n은 1~4의 정수임).The epoxy resin composition for semiconductor device encapsulation according to the present invention comprises an epoxy resin; Curing agent; Inorganic fillers; Siloxane compound and tetrakis [methylene-3- (3,5-di-tertiarybutyl-4-hydroxyphenyl) propionate] methane, wherein the siloxane compound is octamethylcyclotetrasiloxane and Modified siloxane. ≪ RTI ID = 0.0 >
[Chemical Formula 1]

(Wherein R ₁ and R ₂ are each independently an alkyl group having 1 to 4 carbon atoms, an aryl group having 6 to 12 carbon atoms, and n is an integer of 1 to 4).

Description

EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR APPARATUS USING THE SAME Technical Field [1] The present invention relates to an epoxy resin composition for sealing semiconductor devices,

The present invention relates to an epoxy resin composition for sealing semiconductor devices and a semiconductor device using the same. More specifically, the present invention improves adhesion and moldability of a lead frame and a PCB to a photo imageable solder resist mask (PSR) layer, thereby improving device reliability including crack resistance, molding including voids, And storage stability of the epoxy resin composition, and a semiconductor device having the semiconductor element sealed using the epoxy resin composition.

In a new type of package such as a surface mount type BOC (Boron On Chip), MCP (Multi Chip Package), uLGA (Mirco Land Grid Array) and FCFBGA (Flip Chip Fine Ball Grid Array) The thickness of the portion occupied by the composition becomes as thin as a hundred or several tens of microns. As a result, pores are formed at the time of package sealing, incomplete molding occurs, and high adhesion is required, resulting in poor moldability and poor reliability. Also, it is necessary to improve the adhesion between the epoxy resin composition and the photo imageable solder resist mask (PSR) layer of the PCB due to the omission of the plasma process during the assembly of the surface mount type package. In addition, properties for improving stability at room temperature / low temperature storage for stable use of the epoxy resin composition are required.

An object of the present invention is to provide an epoxy resin composition having improved storage stability at normal temperature and low temperature (4 DEG C or less).

It is another object of the present invention to provide an epoxy resin composition for sealing a semiconductor device, which has improved adhesion to a photo imageable solder resist mask (PSR) layer of a PCB without causing internal pores in the surface mount package .

Another object of the present invention is to provide an epoxy resin composition for semiconductor device encapsulation with improved reliability in a surface mount type package while maintaining excellent flowability, moldability, storage stability, and flame retardancy, and a semiconductor device using the epoxy resin composition.

These and other objects of the present invention can be achieved by the present invention which is described in detail.

An aspect of the present invention relates to an epoxy resin composition for sealing semiconductor devices. Wherein the epoxy resin composition for sealing a semiconductor element comprises an epoxy resin; Curing agent; Inorganic fillers; Siloxane compounds and tetrakis [methylene-3- (3,5-di-tertiarybutyl-4-hydroxyphenyl) propionate] methane, wherein the siloxane compound is selected from the group consisting of octamethylcyclotetrasiloxane and An amine-modified siloxane represented by the general formula (1)

[Chemical Formula 1]

(Wherein R ₁ and R ₂ are each independently an alkyl group having 1 to 4 carbon atoms, an aryl group having 6 to 12 carbon atoms, and n is an integer of 1 to 4).

The octamethylcyclotetrasiloxane may be 0.01 to 2% by weight based on the total weight of the epoxy resin composition.

The weight ratio of the amine-modified siloxane to the octamethylcyclotetrasiloxane may be from 10: 1 to 1:10.

The mixture of the amine-modified siloxane and octamethylcyclotetrasiloxane may be 0.01 to 5% by weight based on the total weight of the epoxy resin composition.

The tetrakis [methylene-3- (3,5-di-tertiarybutyl-4-hydroxyphenyl) propionate] methane may be present in an amount of 0.01 to 1% by weight based on the total weight of the epoxy resin composition.

The epoxy resin may include at least one of a phenol aralkyl type epoxy resin represented by the following formula (3) and a biphenyl type epoxy resin represented by the following formula (4).

(3)

(In the above formula (3), the average value of n is 1 to 7.)

[Chemical Formula 4]

(Wherein R is an alkyl group having 1 to 4 carbon atoms, and an average value of n is 0 to 7.)

The curing agent may include at least one of a phenol aralkyl phenol resin represented by the following formula (5), a xylyl phenol resin represented by the following formula (6), and a multifunctional phenol resin containing a repeating unit represented by the following formula (7).

[Chemical Formula 5]

(In the above formula, the average value of n is 1 to 7.)

[Chemical Formula 6]

(Wherein the average value of n is 0 to 7).

(7)

(The average value of n in the above formula is 1 to 7.)

 The equivalent ratio of the epoxy resin to the curing agent may be from 0.95 to 2.

 The epoxy resin composition for semiconductor device encapsulation may further comprise a curing accelerator.

 The epoxy resin composition for sealing a semiconductor device may further comprise a silane coupling agent.

Another aspect of the present invention relates to a semiconductor device in which a semiconductor element is sealed by using the composition.

The present invention relates to a photovoltaic device having improved storage stability at normal temperature and low temperature (4 ° C or less), and is excellent in adhesion characteristics without causing internal pores in a surface mount package, And has improved reliability in a surface mount type package while maintaining excellent flowability, moldability, and flame retardancy, and has an effect of providing a semiconductor device using the epoxy resin composition for semiconductor device encapsulation.

The epoxy resin composition for semiconductor device encapsulation according to the present invention comprises an epoxy resin; Curing agent; Inorganic fillers; Siloxane compounds and tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane.

Epoxy resin

The epoxy resin of the present invention is not particularly limited as long as it is an epoxy resin generally used for sealing semiconductor devices, and is preferably an epoxy compound containing two or more epoxy groups in the molecule. Examples of such epoxy resins include epoxy resins obtained by epoxidation of condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, multifunctional epoxy resins, naphthol novolak type epoxy resins Novolak type epoxy resins such as bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl epoxy resin, dicyclopentadiene epoxy resin, etc. .

Particularly preferred epoxy resins include phenolic aralkyl type epoxy resins having a novolac structure including a biphenyl derivative represented by the following formula (3) and biphenyl type epoxy resins represented by the following formula (4)

(3)

(In the above formula (3), the average value of n is 1 to 7.)

[Chemical Formula 4]

(Wherein R is an alkyl group having 1 to 4 carbon atoms, and an average value of n is 0 to 7.)

Preferably, R is a methyl group or an ethyl group, more preferably a methyl group.

The phenol aralkyl type epoxy resin of formula (3) is based on a phenol skeleton and forms a structure having biphenyls in the middle thereof. Thus, it has excellent hygroscopicity, toughness, oxidation resistance and crack resistance, and has low crosslinking density. It has an advantage that it can secure a certain level of flame retardancy by itself while forming a carbon layer (char). The biphenyl type epoxy resin represented by the above formula (4) is preferred from the viewpoint of enhancing the fluidity and reliability of the resin composition.

These epoxy resins may be used alone or in combination, and may be added to an epoxy resin by addition reaction with other components such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent and a melamine master batch Can also be used. In order to improve the moisture resistance, it is preferable to use a resin having a low chloride ion, sodium ion, and other ionic impurities contained in the epoxy resin.

The epoxy resin may be used in an amount of 2 to 15% by weight, preferably 3 to 15% by weight, and more preferably 3 to 12% by weight in the epoxy resin composition for encapsulating semiconductor devices.

Hardener

The curing agent of the present invention is generally used for sealing semiconductor devices and is not particularly limited as long as it has two or more reactors.

Specific examples thereof include phenol aralkyl type phenol resin, phenol novolac type phenol resin, xylok type phenol resin, cresol novolak type phenol resin, naphthol type phenol resin, terpene type phenol resin, Novolac phenol resins synthesized from bisphenol A and resole, polyhydric phenol compounds including tris (hydroxyphenyl) methane, dihydroxybiphenyl, acid anhydrides including maleic anhydride and phthalic anhydride, And aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone. Particularly preferable examples of the curing agent include phenol aralkyl type phenol resins having a novolak structure including a biphenyl derivative in the molecule represented by the following formula (5), xylok type phenol resins represented by the following formula (6) And the like.

[Chemical Formula 5]

(In the above formula, the average value of n is 1 to 7.)

[Chemical Formula 6]

(Wherein the average value of n is 0 to 7).

(7)

(The average value of n in the above formula is 1 to 7.)

The phenol aralkyl type phenol resin of formula (5) reacts with the phenol aralkyl type epoxy resin to form a carbon layer (char), thereby blocking the heat and oxygen transfer to the periphery, thereby achieving flame retardancy. The xylock type phenol resin of Formula 6 is preferable in terms of enhancing the fluidity and reliability of the resin composition. The multifunctional phenol resin represented by the above formula (7) is preferable in terms of reinforcing the high temperature bending property of the epoxy resin composition.

These curing agents may be used alone or in combination, and they may also be used as an additive compound prepared by subjecting a curing agent to a linear reaction such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, and a stress relieving agent and a melt master batch.

The curing agent may be used in an amount of 0.5 to 13% by weight, preferably 1 to 10% by weight, and more preferably 2 to 8% by weight in the epoxy resin composition for encapsulating semiconductor devices.

The mixing ratio of the epoxy resin and the curing agent can be adjusted in accordance with the requirements of mechanical properties and moisture resistance reliability in the package. In a specific example, the chemical equivalent ratio of the epoxy resin to the curing agent may be from 0.95 to 2, preferably from 1 to 1.75.

Inorganic filler

The inorganic filler used in the present invention is a material used for improvement of mechanical properties and low stress of the epoxy resin composition. Examples of commonly used examples include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide and glass fiber.

Preferably, fused silica having a low linear expansion coefficient is used for low stress. The fused silica refers to amorphous silica having a true specific gravity of 2.3 or less and includes amorphous silica obtained by melting crystalline silica or synthesized from various raw materials. Although the shape and the particle diameter of the fused silica are not particularly limited, the fused silica containing 50 to 99% by weight of spherical fused silica having an average particle diameter of 5 to 30 탆 and the spherical fused silica having an average particle diameter of 0.001 to 1 탆 in an amount of 1 to 50% It is preferable that the mixture is contained in an amount of 40 to 100% by weight based on the total filler. The maximum particle diameter can be adjusted to any one of 45 탆, 55 탆 and 75 탆 according to the application. In the molten spherical silica, conductive carbon may be contained as a foreign substance on the surface of silica, but it is also important to select a substance having a small amount of polar foreign substances.

The amount of the inorganic filler to be used in the present invention depends on required properties such as moldability, low stress, and high temperature strength. In a concrete example, it may be 70 to 95% by weight, preferably 75 to 92% by weight in the epoxy resin composition for sealing a semiconductor device.

Siloxane  compound

The siloxane compound of the present invention may include an amine-modified siloxane represented by the following formula (1) and octamethylcyclotetrasiloxane represented by the following formula (2)

[Chemical Formula 1]

(Wherein R ₁ and R ₂ are each independently an alkyl group having 1 to 4 carbon atoms, an aryl group having 6 to 12 carbon atoms, and n is an integer of 1 to 4).

In the above, R ₁ and R ₂ are each independently a methyl group or an ethyl group, and more preferably a methyl group.

The amine-modified siloxane can be applied with octamethylcyclotetrasiloxane represented by the following formula 2 to further improve the adhesion properties:

(2)

By including the above-mentioned octamethylcyclotetrasiloxane, the epoxy resin composition for sealing a semiconductor device can be effectively attached to a lead frame, a PCB, and the like, and pores can be prevented from being generated in the package for surface mounting, and adhesion properties can be improved.

In embodiments, the amine-modified siloxane and octamethylcyclotetrasiloxane may be mixed in a ratio of 10: 1 to 1:10. Preferably, the amine-modified siloxane and octamethylcyclotetrasiloxane may be mixed in a ratio of from 5: 1 to 1: 5. Within the above range, a remarkable synergistic effect of the adhesion of the cured product for sealing semiconductor devices to the lead frame of the semiconductor device can be obtained, and the reliability and moldability are excellent.

The mixture of the amine-modified siloxane and octamethylcyclotetrasiloxane may be 0.01 to 5% by weight, preferably 0.05 to 3% by weight, more preferably 0.1 to 2% by weight based on the total weight of the epoxy resin composition for sealing a semiconductor device have. In this range, semiconductor moldability and package reliability are excellent.

The siloxane compound may be used alone in the preparation of the epoxy resin composition. For uniform dispersion, the siloxane compound is preliminarily dispersed in a melt of an epoxy resin or a curing agent through a method such as melt masterbatch before the preparation of the epoxy resin composition, Can be used. It is more preferable to preliminarily react with the curing agent beforehand.

Tetrakis [methylene-3- (3,5-di- Tertiary butyl -4- Hydroxyphenyl ) Propionate ]methane

The epoxy resin composition for semiconductor device encapsulation of the present invention contains tetrakis [methylene-3- (3,5-di-tertiarybutyl-4-hydroxyphenyl) propionate] methane as an antioxidant, Not only can it be improved, but also adhesion, formability, and reliability can be improved.

The tetrakis [methylene-3- (3,5-di-tertiarybutyl-4-hydroxyphenyl) propionate] methane has a structure represented by the following formula (8).

[Chemical Formula 8]

The tetrakis [methylene-3- (3,5-di-tertiarybutyl-4-hydroxyphenyl) propionate] methane is used in an amount of 0.01 to 1% by weight based on the total weight of the epoxy resin composition for sealing a semiconductor device, May be 0.05 to 0.5% by weight, more preferably 0.1 to 0.3% by weight. Within the above range, it has a low temperature storage stability and physical properties such as adhesion, formability and reliability.

Hardening accelerator

The epoxy resin composition for semiconductor device encapsulation of the present invention may further comprise a curing accelerator.

The curing accelerator is a substance that promotes the reaction between the epoxy resin and the curing agent. For example, tertiary amines, organometallic compounds, organic phosphorus compounds, imidazoles, and boron compounds can be used. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris ) Phenol and tri-2-ethylhexyl acid salt. Organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organic phosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine Pin-1,4-benzoquinone adducts and the like. Imidazoles include, but are not limited to, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, Imidazole and the like. Examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine , Tetrafluoroborane amine, and the like. In addition, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene: DBN), 1,8-diazabicyclo [5.4. 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolak resin salts. Particularly preferable curing accelerators include organic phosphorus compounds, boron compounds, amine-based compounds, and imidazole-based curing accelerators, either alone or in combination. As the curing accelerator, it is also possible to use an adduct made by reacting with an epoxy resin or a curing agent.

The amount of the curing accelerator used in the present invention may be 0.01 to 2% by weight, preferably 0.02 to 1.5% by weight, more preferably 0.05 to 1% by weight based on the total weight of the epoxy resin composition.

Silane coupling agent

The epoxy resin composition for semiconductor device encapsulation of the present invention may further comprise a coupling agent. The coupling agent may be a silane coupling agent. The silane coupling agent that can be used is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler so as to improve the interface strength between the epoxy resin and the inorganic filler. Examples of the silane coupling agent include epoxy silane, aminosilane, ureido silane, mercaptosilane, . The coupling agent may be used alone or in combination.

The coupling agent may be used in an amount of 0.01 to 5% by weight, preferably 0.05 to 3% by weight based on the total weight of the epoxy resin composition. More preferably from 0.1 to 2% by weight.

In addition, the epoxy resin composition of the present invention may contain a releasing agent such as a higher fatty acid, a higher fatty acid metal salt, and an ester-based wax, as long as the object of the present invention is not impaired; Coloring agents such as carbon black, organic dyes, and inorganic dyes; And a stress relieving agent such as a modified silicone oil, a silicone powder, and a silicone resin, if necessary.

As a general method for producing an epoxy resin composition using the above-described raw materials, a predetermined mixing amount is uniformly and sufficiently mixed using a Hensel mixer or a Lodige mixer, followed by roll-milling ) Or a kneader, and then cooled and pulverized to obtain a final powder product.

As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method can be generally used. However, it is also possible to perform molding by an injection molding method or a casting method. The epoxy resin composition is led by a copper-based lead frame (for example, a silver-plated copper lead frame), a nickel alloy-based lead frame, and a lead frame containing nickel and palladium. A lead frame plated with at least one of gold (Au), and a PCB or the like to seal the semiconductor element.

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.

Example

The specifications of each component used in the following examples and comparative examples are as follows:

(A) an epoxy resin

(a1) phenol aralkyl type epoxy resin: NC-3000 product manufactured by Nippon Kayaku was used.

(a2) Biphenyl type epoxy resin: YX-4000H manufactured by Japan Epoxy Resin was used.

(B) Curing agent

(b1) Multifunctional phenol resin: MEH-7500-3S manufactured by Meiwa kasei was used.

(b2) Phenol aralkyl type phenol resin: MEH-7851SS manufactured by Meiwa kasei was used.

(C) Inorganic filler: Silica having an average particle diameter of 7 탆 was used.

(D) siloxane compound

(d1) octamethylcyclotetrasiloxane

(d2) amine-modified siloxanes prepared by Dowcorning, wherein R ₁ and R ₂ are methyl groups and kinematic viscosity is 1500 centipoise, are used in the following formula (1).

[Chemical Formula 1]

(E) Antioxidant

(e1) Tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane manufactured by SONGNOX was used.

(e2) IRGANOX-1076 manufactured by Songwon Industrial Co., Ltd. was used.

(F) Curing accelerator: tetraphenylphosphonium-tetraphenylborate prepared in Hokko was used.

(G) Silane coupling agent: (g1) mercaptopropyltrimethoxysilane, (g2) methyltrimethoxysilane, and (g3) N-phenyl- gamma -aminopropyltrimethoxysilane were mixed and used.

Examples 1 to 4 and Comparative Examples 1 to 4

The mixture was uniformly mixed using a Henschel mixer (KEUM SUNG MACHINERY CO. LTD. (KSM-22)) according to the composition shown in Table 1, and then melt kneaded at 90 to 110 캜 using a continuous kneader, To prepare an epoxy resin composition for element sealing.

Component (% by weight) Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 (A) (a1) 5.46 5.46 5.41 5.41 5.46 5.44 5.46 5.46 (a2) 1.90 1.90 1.83 1.83 1.90 1.87 1.90 1.90 (B) (b1) 1.69 1.66 1.62 1.47 1.66 1.60 1.69 1.69 (b2) 2.53 2.51 2.47 2.32 2.51 2.40 2.53 2.53 (C) 86 86 86 86 86 86 86 86 (D) (d1) 0.04 0.04 0.4 0.4 - 0.4 0.1 0.04 (d2) 0.06 0.06 0.16 0.16 - 0.28 - 0.06 (E) (e1) 0.1 0.2 0.3 0.2 - - 0.1 - (e2) - - - - - - - 0.1 (F) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 (G) (g1) 0.3 0.5 0.3 0.5 0.5 0.3 0.3 0.3 (g2) 0.56 0.31 0.37 0.35 0.61 0.35 0.56 0.56 (g3) 0.58 0.58 0.36 0.58 0.58 0.58 0.58 0.58 Carbon black 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 Carnauba wax (Carnauba wax) 0.28 0.28 0.28 0.28 0.28 0.28 0.28 0.28 Sum 100 100 100 100 100 100 100 100

The epoxy resin composition for sealing semiconductor devices prepared above was evaluated for physical properties by the following methods.

(1) Spiral flow (inch): conditions of mold temperature 175 ° C., 70 kgf / cm ² , injection pressure 9 MPa, and curing time of 90 seconds in a mold for spiral flow measurement according to EMMI-1-66 using a low pressure transfer molding machine , And the flow length was measured. The higher the measured value, the better the fluidity.

(2) Glass transition temperature (Tg, ° C): A standard specimen (12.7 × 10.0 × 6.4 mm) was prepared and post cured at 175 ° C. for 4 hours. The specimen was thermocoupled at 5 ° C / min using a thermomechanical analyzer The inflection point of the physical properties was measured.

(3) Adhesive force (kgf): Adhesive force of PCB (200FBGA, 0.22t, SSE) to the PSR layer The specimen was obtained by forming an epoxy resin composition with a diameter of 3mm on a 30mm x 30mm PCB PSR layer, Were placed in an oven at 175 ° C and post-cured (PMC) for 4 hours. The adhesion was measured using a die shear tester (Dage 4000, DS-200 load cell).

Thereafter, a die shear tester (Dage 4000, DS-200, manufactured by Tosoh Corporation) was placed under pre-condition conditions in which the film was allowed to stand under the conditions of 85 ° C. and 85% relative humidity for 48 hours and then passed through IR reflow once for 30 seconds at 260 ° C. load cell).

(4) Flame retardancy: The flame retardancy was evaluated on the basis of 1/8 inch thickness according to UL 94 V-O standard.

(5) Moldability: The epoxy resin composition shown in Table 1 was molded by transfer molding at 175 캜 for 70 seconds using an MPS (Multi Plunger System) molding machine, so that four semiconductor chips were stacked on top of each other by an organic adhesive film, (14 mm × 18 mm × 1.6 mm) packages were manufactured for each composition. Post-cure (PMC) at 175 ° C for 4 hours and then cooled to room temperature. The existence of pores in the package was evaluated by C-SAM (scanning acoutic microscope, Sonix), and the presence or absence of pores in the package was confirmed by a microscope using a polisher (Rotopol-25, Struers).

(6) Reliability: 128 pieces of each of the packages used for the formability evaluation were dried at 125 DEG C for 24 hours, and then subjected to 5 cycles (1 cycle was a package at -65 DEG C for 10 minutes, 25 DEG C for 5 minutes, Lt; RTI ID = 0.0 > 150 C < / RTI > for 10 minutes). Thereafter, the package was allowed to stand for 48 hours under the conditions of 85 ° C and 85% relative humidity, and then passed through the IR reflow once for 30 seconds at 260 ° C. Were observed with an optical microscope. No evaluation was made on the package where the appearance crack occurred.

For a package without external cracks, a thermal shock of 1000 cycles (one cycle means leaving the package at -65 ° C for 10 minutes, 25 ° C for 5 minutes, and 150 ° C for 10 minutes) And the crack and peeling between the epoxy resin composition and the lead frame were evaluated by using a non-destructive testing machine C-SAM. Table 2 shows the number of semiconductor devices in which cracks occurred in two stages of the thermal shock test after the pre-conditioning condition and the number of semiconductor devices in which the peeling occurred in the thermal shock test step.

(7) Storage stability at low temperature (%): The specimens stored under the silica gel packaging at 5 ° C or less for 1 month, 3 months, and 6 months were taken out at room temperature (25 ° C) And the spiral flow retention rate was calculated by the following equation (1).

[Formula 1]

(In the above,? F is the spiral flow retention rate, F0 is the initial spiral flow, F1 is the spiral flow after storing silver)

(8) Storage stability at room temperature (%): The specimens stored in silica gel packaging at 23 ° C and 50 ± 5% relative humidity for 48 hours, 72 hours, and 96 hours were taken out at room temperature (25 ° C) Left for 12 hours, measured by the above-described spiral flow method, and calculated according to the above-mentioned equation (1).

Evaluation items Example Comparative Example One 2 3 4 One 2 3 4 Spiral flow (inch) 55 55 56 54 56 54 53 57 Tg (占 폚) 134 133 132 133 134 135 134 132 Adhesion (kgf)
PCB After PMC 30 31 34 37 25 28 26 30 After 85 ° C / 85% + 48hrs 30 32 33 36 23 24 25 29 Flammability UL 94 V-0 V-0 V-0 V-0 V-0 V-0 V-0 V-0 V-0 responsibility Number of cracks 0 0 0 0 86 0 74 0 responsibility Number of peeling occurrences 0 0 0 0 27 0 22 0 Formability Number of internal pore generation 0 0 0 0 24 0 7 0 (More than 20um) Total number of tested semiconductor devices 256 256 256 256 256 256 256 256 Low temperature storage stability F (%) 1month 100% 100% 100% 100% 100% 100% 100% 100% 3month 98% 98% 98% 98% 98% 96% 99% 97% 6month 96% 96% 96% 96% 97% 88% 97% 89% Room temperature storage stability F (%) 48hr 97% 97% 97% 98% 98% 92% 96% 92% 72hr 93% 94% 93% 93% 94% 83% 92% 89% 96hr 90% 92% 91% 91% 92% 82% 91% 86%

As shown in Table 2, the epoxy resin compositions for semiconductor device encapsulation of Examples 1 to 4 had excellent adhesion to the PSR layer of the PCB used in the surface mount type package, and did not generate internal pores, It can be seen that a semiconductor device having high reliability, storage stability, and moldability can be manufactured.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are in all respects illustrative and not restrictive.

Claims (11)

Epoxy resin; Curing agent; Inorganic fillers; Siloxane compounds and tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane,
Wherein the siloxane compound comprises octamethylcyclotetrasiloxane and an amine-modified siloxane represented by the following formula (1): < EMI ID =

[Chemical Formula 1]

(Wherein R ₁ and R ₂ are each independently an alkyl group having 1 to 4 carbon atoms, an aryl group having 6 to 12 carbon atoms, and n is an integer of 1 to 4).

The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the octamethylcyclotetrasiloxane is 0.01 to 2% by weight based on the total weight of the epoxy resin composition.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the weight ratio of the amine-modified siloxane to the octamethylcyclotetrasiloxane is from 10: 1 to 1:10.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the mixture of the amine-modified siloxane and octamethylcyclotetrasiloxane is 0.01 to 5% by weight based on the total weight of the epoxy resin composition.
2. The epoxy resin composition according to claim 1, wherein the tetrakis [methylene-3- (3,5-di-tertiarybutyl-4-hydroxyphenyl) propionate] methane is present in an amount of 0.01 to 1% Wherein the epoxy resin composition is a silicone resin.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the epoxy resin comprises at least one of a phenol aralkyl type epoxy resin represented by the following formula (3) and a biphenyl type epoxy resin represented by the following formula (4) :
(3)

(In the above formula (3), the average value of n is 1 to 7.)

[Chemical Formula 4]

(Wherein R is an alkyl group having 1 to 4 carbon atoms, and an average value of n is 0 to 7.)
The curing agent according to claim 1, wherein the curing agent comprises at least one of a phenol aralkyl type phenol resin represented by the following formula (5), a xylyl type phenol resin represented by the following formula (6), and a multifunctional phenol resin containing a repeating unit represented by the following formula Epoxy resin composition for sealing a semiconductor element,

[Chemical Formula 5]

(In the above formula, the average value of n is 1 to 7.)

[Chemical Formula 6]

(Wherein the average value of n is 0 to 7).

(7)

(The average value of n in the above formula is 1 to 7.)
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein an equivalence ratio of the epoxy resin to the curing agent is 0.95 to 2.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the epoxy resin composition for sealing a semiconductor element further comprises a curing accelerator.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the epoxy resin composition for sealing a semiconductor device further comprises a silane coupling agent.
A semiconductor device having a semiconductor element sealed by using the composition of any one of claims 1 to 10.