KR101748024B1 - Composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same - Google Patents
Composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same Download PDFInfo
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- KR101748024B1 KR101748024B1 KR1020150065544A KR20150065544A KR101748024B1 KR 101748024 B1 KR101748024 B1 KR 101748024B1 KR 1020150065544 A KR1020150065544 A KR 1020150065544A KR 20150065544 A KR20150065544 A KR 20150065544A KR 101748024 B1 KR101748024 B1 KR 101748024B1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C08K3/0033—
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2190/00—Compositions for sealing or packing joints
Abstract
The epoxy resin composition for semiconductor device encapsulation according to the present invention comprises an epoxy resin, a curing agent, and an inorganic filler, and the epoxy resin includes a first epoxy resin containing a unit represented by the following formula (1).
[Chemical Formula 1]
(Wherein M 1 is an arylene group having 6 to 20 carbon atoms, an alkylarylene group having 7 to 20 carbon atoms, or an arylalkylene group having 7 to 20 carbon atoms,
M 2 is an oxygen-substituted or unsubstituted hydrocarbon group having 1 to 5 carbon atoms or a hydrocarbon group having 1 to 5 carbon atoms substituted with a 2,3-epoxy-propanoxyphenyl group,
Y are each independently an aromatic compound or a heteroaromatic compound,
m is an integer of 1 to 4, n is an integer of 1 to 10, and * is a binding site).
Description
TECHNICAL FIELD The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed by using the same.
A method for sealing a semiconductor element with an epoxy resin composition is commercially performed for the purpose of protecting the semiconductor element from external environmental factors such as moisture and mechanical impact. Recently, as small and thin digital devices become common, the degree of integration of semiconductor devices is improved day by day, and the chip is being stratified and densified. When the semiconductor device is sealed in a small, thin package in accordance with such high stacking and high-density tendency, the volume of the epoxy resin composition is reduced and the effect of shielding the semiconductor device is deteriorated. In order to solve this problem, there is an effort to increase the shielding force by applying a square pillar or by coating a refractive index control layer on the surface of the core particle. However, this is defective due to chip damage and low fluidity of the epoxy resin composition. Therefore, there is a need for an epoxy resin composition having excellent shielding power without damaging the chip or reducing the fluidity.
Prior art related to this is disclosed in Korean Patent Publication No. 1991-0008066.
An object of the present invention is to provide an epoxy resin composition for sealing semiconductor devices having high refractive index and excellent shielding ability and a semiconductor element sealed by using the same.
Another object of the present invention is to provide an epoxy resin composition for sealing a semiconductor element which does not cause chip damage, lowered fluidity and void generation, and a semiconductor element sealed by using it.
The above and other objects of the present invention can be achieved by the present invention described below.
One aspect of the present invention relates to an epoxy resin composition for sealing a semiconductor device.
According to one embodiment, the epoxy resin composition for encapsulating semiconductor devices comprises an epoxy resin, a curing agent, and an inorganic filler, and the epoxy resin includes a first epoxy resin containing a unit represented by the following formula (1).
[Chemical Formula 1]
(Wherein M 1 is an arylene group having 6 to 20 carbon atoms, an alkylarylene group having 7 to 20 carbon atoms, or an arylalkylene group having 7 to 20 carbon atoms,
M 2 is an oxygen-substituted or unsubstituted hydrocarbon group having 1 to 5 carbon atoms or a hydrocarbon group having 1 to 5 carbon atoms substituted with a 2,3-epoxy-propanoxyphenyl group,
Each Y is independently an aromatic substituent or a heteroaromatic substituent,
m is an integer of 1 to 4, n is an integer of 1 to 10, and * is a binding site).
The M 1 may be represented by the following formula (2).
(2)
A halogen atom or an alkyl group having 1 to 5 carbon atoms, M 3 is a single bond or an alkylene group having 1 to 5 carbon atoms, h is 0 or 1, and Z 1 and Z 2 are each independently hydrogen, a halogen atom or an alkyl group having 1 to 5 carbon atoms, * Is the binding site).
The M 2 may be represented by one of the following formulas (3-1) to (3-3).
[Formula 3-1]
[Formula 3-2]
[Formula 3-3]
(In the formulas (3-1) to (3-3), Y is independently an aromatic substituent or a heteroaromatic substituent, j is an integer of 1 or 2, and * is a bonding site).
Y is independently selected from the group consisting of
(Wherein R 1 to R 49 are hydrogen, a halogen element, or an alkyl group having 1 to 5 carbon atoms, j is an integer of 0 to 2, k is an integer of 0 to 3, and m ' An integer of 0 to 4, n 'is an integer of 0 to 5, and * is a binding site).
In another embodiment, the epoxy resin may further comprise a second epoxy resin other than the first epoxy resin.
The refractive index of the first epoxy resin may be 1.7 to 2.2.
The first epoxy resin may be contained in an amount of 0.1 to 20% by weight based on the solid content of the epoxy resin composition.
The weight ratio of the first epoxy resin to the second epoxy resin may be 1: 0.1 to 1:10.
The curing agent may include a phenol novolac-type resin and a multifunctional phenol resin.
The inorganic filler may include 50% by weight to 99% by weight of spherical fused silica having an average particle diameter of 5 占 퐉 to 30 占 퐉 and 1% by weight to 50% by weight of spherical fused silica having an average particle diameter of 0.001 占 퐉 to 1 占 퐉.
The composition may include 0.1 to 20% by weight of an epoxy resin, 0.1 to 13% by weight of a curing agent, and 70 to 95% by weight of an inorganic filler.
In another embodiment, the composition may further comprise at least one of a curing accelerator, a coupling agent, and a colorant.
The composition may have a refractive index difference of 0.001 to 0.7 between the first epoxy resin and the second epoxy resin.
The composition was molded under the conditions of 175 ° C., conveying pressure 9 MPa, conveying speed 1 mm / sec, and curing time 120 sec to prepare circular specimens having a diameter of 50 mm and a thickness of 3.2 mm and cured at 175 ° C. for 4 hours The lightness L can be 32 or less.
Another aspect of the present invention relates to a semiconductor device.
According to one embodiment, the semiconductor element may be one which is sealed using any one of the above epoxy resin compositions for sealing a semiconductor element.
The present invention provides an epoxy resin composition for sealing a semiconductor element which has a high refractive index, excellent shielding ability, does not cause chip damage, lowered fluidity and voids, and has an effect of providing a sealed semiconductor element using the epoxy resin composition.
In the present specification, the "refractive index" can be measured using a DR-M2 multi-wavelength Abbe refractometer manufactured by ATAGO.
In the present specification, "lightness (L)" is obtained by molding a circular specimen having a diameter of 50 mm and a thickness of 3.2 mm by molding the epoxy resin composition under conditions of 175 DEG C, a transfer pressure of 9 MPa, a transfer rate of 1 mm / sec and a curing time of 120 seconds , And a value measured with a colorimeter (Minolta-3700, Minolta Co.) for a specimen cured at 175 ° C for 4 hours.
The epoxy resin composition for semiconductor device encapsulation according to the present invention comprises an epoxy resin, a curing agent, and an inorganic filler, and the epoxy resin includes a first epoxy resin containing a unit represented by the following formula (1).
[Chemical Formula 1]
(Wherein M 1 is an arylene group having 6 to 20 carbon atoms, an alkylarylene group having 7 to 20 carbon atoms, or an arylalkylene group having 7 to 20 carbon atoms,
M 2 is a substituted or unsubstituted hydrocarbon group of 1 to 5 carbon atoms or a hydrocarbon group of 1 to 5 carbon atoms substituted with a 2,3-epoxy-propanoxyphenyl group,
Each Y is independently an aromatic substituent or a heteroaromatic substituent,
m is an integer of 1 to 4, n is an integer of 1 to 10, and * is a binding site).
Epoxy resin
In an embodiment, the epoxy resin comprises a first epoxy resin. Hereinafter, the first epoxy resin will be described.
The first epoxy resin
The first epoxy resin is represented by the following formula (1).
[Chemical Formula 1]
(Wherein M 1 is an arylene group having 6 to 20 carbon atoms, an alkylarylene group having 7 to 20 carbon atoms, or an arylalkylene group having 7 to 20 carbon atoms,
M 2 is an oxygen-substituted or unsubstituted hydrocarbon group having 1 to 5 carbon atoms or a hydrocarbon group having 1 to 5 carbon atoms substituted with a 2,3-epoxy-propanoxyphenyl group,
Each Y is independently an aromatic substituent or a heteroaromatic substituent,
m is an integer of 1 to 4, n is an integer of 1 to 10, and * is a binding site).
The first epoxy resin is contained in the epoxy resin composition to increase the refractive index of the epoxy resin composition and increase the shielding force so that the inside of the semiconductor package is not shone. The increase of the shielding force solves the problem of recognizing a wire as a defect in the package during the semiconductor manufacturing process and also increases the markability.
Specifically, M 1 may be represented by the following formula (2).
(2)
A halogen atom or an alkyl group having 1 to 5 carbon atoms, M 3 is a single bond or an alkylene group having 1 to 5 carbon atoms, h is 0 or 1, and Z 1 and Z 2 are each independently hydrogen, a halogen atom or an alkyl group having 1 to 5 carbon atoms, * Is the binding site).
M 1 may be, for example, a biphenylene group, a diphenylpropylene group, a phenylene group, or the like.
Specifically, M 2 may be represented by one of the following formulas (3-1) to (3-3).
[Formula 3-1]
[Formula 3-2]
[Formula 3-3]
(In the formulas (3-1) to (3-3), Y is independently an aromatic substituent or a heteroaromatic substituent, j is an integer of 1 or 2, and * is a bonding site).
In the above formulas (1) and (3-1) to (3-3), Y is independently
(Wherein R 1 to R 49 are hydrogen, a halogen atom, or an alkyl group having 1 to 5 carbon atoms, j is an integer of 0 to 2, k is an integer of 0 to 3, and m ' N 'is an integer of 0 to 5, and * is a bonding site).
The first epoxy resin may be, for example, an epoxy resin represented by the following general formulas (7) to (10).
(7)
(Wherein R is independently an alkyl group having 1 to 4 carbon atoms, Y is the same as Y in the formula (1), and n is an average value of 1 to 7).
[Chemical Formula 8]
(Wherein R is each independently a hydrogen atom or a C 1-6 alkyl group, Y is the same as Y in the formula (1), and n is an integer of 0 to 6)
Specifically, each R may independently be hydrogen, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl or hexyl, But is not necessarily limited thereto.
[Chemical Formula 9]
(In the above formula (9), Y is the same as Y in the formula (1), and the average value of n is 1 to 7.)
[Chemical formula 10]
(Wherein R is independently an alkyl group having 1 to 4 carbon atoms, Y is the same as Y in the formula (1), and n is an average value of 1 to 7).
The refractive index of the first epoxy resin may be 1.7 to 2.2, specifically 1.75 to 2.1, more specifically 1.8 to 2.0. The refractive index of the epoxy resin composition is increased within the above range, and the shielding force is excellent.
The first epoxy resin may be at least 10 wt%, specifically at least 20 wt%, more specifically at least 25 wt% of the total epoxy resin. In this range, the shielding force is excellent without deteriorating other physical properties.
The first epoxy resin may be 0.1 to 20% by weight, specifically 0.1 to 17% by weight, more specifically 0.1 to 10% by weight, based on the solid content of the epoxy resin composition for sealing a semiconductor device. In the above range, the epoxy resin composition has an increased refractive index and is excellent in shielding power without chip damage, reduced fluidity and voids.
The second epoxy resin
In another embodiment, the epoxy resin may further comprise a second epoxy resin. The second epoxy resin means an epoxy resin excluding the first epoxy resin.
The second epoxy resin is not particularly limited as long as it is an epoxy resin generally used for sealing semiconductor devices. The second epoxy resin may have a lower refractive index than the first epoxy resin. For example, the refractive index difference between the first epoxy resin and the second epoxy resin may be 0.001 to 0.7, specifically 0.001 to 0.6, more specifically 0.001 to 0.5. The refractive index of the epoxy resin composition is high in the above-mentioned range, and the shielding force is excellent. Specifically, an epoxy compound containing two or more epoxy groups in the molecule can be used as the second epoxy resin. Examples of the second epoxy resin include epoxy resins obtained by epoxidation of condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, multifunctional epoxy resins, naphthol novolak Novolak type epoxy resins such as bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl type epoxy resin, dicyclopentadiene type epoxy resin, etc. .
For example, the second epoxy resin may include at least one of a multifunctional epoxy resin, a phenol aralkyl type epoxy resin, and a biphenyl type epoxy resin. The multifunctional epoxy resin may be a multifunctional epoxy resin represented by the following formula (4), and the phenol aralkyl type epoxy resin may include a novolac phenol having a biphenyl derivative represented by the following formula (5) An aralkyl type epoxy resin can be used, and as the biphenyl type epoxy resin, a biphenyl type epoxy resin represented by the following formula (6) can be used.
[Chemical Formula 4]
(Wherein R is independently a hydrogen atom or a C 1-6 alkyl group, R 'is each independently a hydrogen atom, a methyl group or an ethyl group, and n is an integer of 0 to 6)
Specifically, each R may independently be hydrogen, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl or hexyl, But is not necessarily limited thereto.
Specifically, the multifunctional epoxy resin composition may be a triphenolalkane type epoxy resin such as triphenolmethane type epoxy resin or triphenolpropane type epoxy resin.
[Chemical Formula 5]
(In Formula 5, the average value of n is 1 to 7)
[Chemical Formula 6]
(Wherein R is independently an alkyl group having 1 to 4 carbon atoms, and an average value of n is 0 to 7).
The multifunctional epoxy resin of the above formula (4) has the advantage that it can reduce the deformation of the package, has excellent fast curability, latent property and storage stability, and is also excellent in cured product strength and adhesiveness.
The phenol aralkyl type epoxy resin of formula (5) is based on a phenol skeleton and forms a structure having biphenyls in the middle thereof. Thus, it has excellent hygroscopicity, toughness, oxidation resistance and crack resistance and has low crosslinking density. There is an advantage that the flame resistance can be secured to a certain level by itself while forming a char. The biphenyl-type epoxy resin of Formula 6 is preferred from the viewpoint of enhancing the fluidity and reliability of the resin composition.
These second epoxy resins may be used alone or in combination, and may be prepared by subjecting an epoxy resin to a linear reaction with other components such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relieving agent and a melt master batch Additional compounds may also be used. In order to improve the moisture resistance, it is preferable to use a resin having a low chloride ion, sodium ion, and other ionic impurities contained in the epoxy resin.
When the first epoxy resin and the second epoxy resin are used in combination, the weight ratio of the first epoxy resin and the second epoxy resin may be 1: 0.1 to 1:10, specifically 1: 0.5 to 1: 5 . In the above range, the epoxy resin composition can balance the shielding force and the fluidity.
The epoxy resin may be 0.1 to 20% by weight, specifically 0.1 to 17% by weight, more specifically 0.1 to 10% by weight in the epoxy resin composition for sealing a semiconductor device. In the above range, the epoxy resin composition is excellent in the adhesive strength and strength of the cured product.
Hardener
The curing agent is generally used for sealing semiconductor devices and is not particularly limited as long as it has two or more reactors.
Specific examples thereof include phenol aralkyl type phenol resins, phenol novolac type phenol resins, xylok type phenol resins, cresol novolak type phenol resins, naphthol type phenol resins, terpene type phenol resins, multifunctional phenol resins, dicyclopentadiene Novolak phenol resins synthesized from bisphenol A and resole, polyhydric phenol compounds including tris (hydroxyphenyl) methane, dihydroxybiphenyl, acid anhydrides including maleic anhydride and phthalic anhydride, methaphenyl And aromatic amines such as diamine, diaminodiphenylmethane, and diaminodiphenylsulfone.
For example, the curing agent may include at least one of a phenol novolak type phenol resin, a xylock type phenol resin, a phenol aralkyl type phenol resin, and a multifunctional phenol resin. A phenol novolak type phenol resin represented by the following formula (11) can be used as the phenol novolak type phenol resin, and the phenolic novolak type phenolic resin having a novolak structure containing a biphenyl derivative in the molecule represented by the following formula Phenol aralkyl type phenol resin can be used. As the xylock type phenol resin, a xylok type phenol resin represented by the following formula (13) can be used, and as the above-mentioned polyfunctional phenol resin, A multifunctional phenol resin can be used.
(11)
(In the above formula (11), n is 1 to 7.)
[Chemical Formula 12]
(In the above formula (12), the average value of n is 1 to 7).
[Chemical Formula 13]
(In the above formula (13), the average value of n is 0 to 7)
[Chemical Formula 14]
(The average value of n in the above formula (14) is 1 to 7.)
The phenol novolak type phenol resin of formula (11) has a short cross-linking point interval, and when it reacts with an epoxy resin, the density becomes high to increase the glass transition temperature of the cured product, Warpage can be suppressed. The phenol aralkyl type phenol resin of formula (12) reacts with the phenol aralkyl type epoxy resin to form a carbon layer (char), thereby blocking heat and oxygen from the surrounding area, thereby achieving flame retardancy. The xylylene type phenolic resin represented by the above formula (13) is preferable in terms of enhancing the fluidity and reliability of the resin composition. The multifunctional phenol resin represented by the above formula (14) is preferable in terms of reinforcing the high temperature bending property of the epoxy resin composition. Specifically, the curing agent may include a phenol novolak type phenolic resin and a polyfunctional phenolic resin. In this case, the crosslinking density of the epoxy resin composition can be further increased, the glass transition temperature (Tg) of the cured product can be increased, and an epoxy resin composition with less shrinkage can be produced. Therefore, the expansion or contraction of the PCB can be more firmly held, and the warpage of the semiconductor device package can be suppressed.
These curing agents may be used alone or in combination, and they may also be used as an additive compound prepared by subjecting a curing agent to a linear reaction such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, and a stress relieving agent and a melt master batch.
The curing agent may be 0.1 to 13% by weight, preferably 0.1 to 10% by weight, more preferably 0.1 to 8% by weight in the epoxy resin composition for sealing a semiconductor device. Within the above range, the epoxy resin composition is excellent in the degree of curing and the strength of the cured product.
The mixing ratio of the epoxy resin and the curing agent can be adjusted in accordance with the requirements of mechanical properties and moisture resistance reliability in the package. In an embodiment, the chemical equivalent ratio of the epoxy resin to the curing agent may be from 0.95 to 4, more specifically from 1.5 to 3, more specifically from 2 to 3. In the above range, the epoxy resin composition is excellent in the strength of the cured product.
Inorganic filler
The inorganic filler is a material used for improving the mechanical properties and low stress of the epoxy resin composition. Examples of commonly used examples include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide and glass fiber.
In the specific example, fused silica having a low coefficient of linear expansion is used for low stress. The fused silica refers to amorphous silica having a true specific gravity of 2.3 or less and includes amorphous silica obtained by melting crystalline silica or synthesized from various raw materials. The shape and the particle diameter of the fused silica are not particularly limited, but can be, for example, a mixture of spherical fused silica and other spherical fused silica having an average particle diameter. Specifically, spherical fused silica having an average particle diameter of 0.001 to 1 μm and containing 50 to 99% by weight, specifically 60 to 99% by weight, more specifically 70 to 99% by weight of spherical fused silica having an average particle diameter of 5 to 30 μm Of 1 to 50% by weight, specifically 1 to 40% by weight, more specifically 1 to 30% by weight, based on the total weight of the composition. The strength of the cured product in the above range is excellent. It is preferable that the fused silica mixture is contained in an amount of 40 to 100% by weight based on the total filler. There is an advantage of excellent fluidity in the above range. The maximum particle diameter can be adjusted to any one of 45 탆, 55 탆 and 75 탆 according to the application. In the spherical fused silica, conductive carbon may be included as a foreign substance on the surface of silica, but it is also important to select a substance having a small amount of polar foreign substances. By using the spherical fused silica, chip damage can be prevented.
The amount of the inorganic filler used varies depending on required properties such as moldability, low stress and high temperature strength. In an embodiment, it may be 70 wt% to 95 wt%, specifically 75 wt% to 95 wt% of the epoxy resin composition for encapsulating semiconductor devices.
The epoxy resin composition for sealing a semiconductor device may further include at least one of a curing accelerator, a coupling agent and a colorant.
Hardening accelerator
The curing accelerator is a substance that promotes the reaction between the epoxy resin and the curing agent. For example, tertiary amines, organometallic compounds, organic phosphorus compounds, imidazoles, and boron compounds can be used. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris ) Phenol and tri-2-ethylhexyl acid salt.
Organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organic phosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine Pin-1,4-benzoquinone adducts and the like. Imidazoles include, but are not limited to, 2-phenyl-4 methylimidazole, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, -Methylimidazole, 2-heptadecylimidazole, and the like. Examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine , Tetrafluoroborane amine, and the like. In addition, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene: DBN), 1,8-diazabicyclo [5.4. 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolak resin salts.
Specific examples of the curing accelerator include organic phosphorus compounds, boron compounds, amine-based compounds, and imidazole-based curing accelerators, either alone or in combination. As the curing accelerator, it is also possible to use an adduct made by reacting with an epoxy resin or a curing agent.
The amount of the curing accelerator to be used in the present invention may be 0.01 to 2% by weight, specifically 0.02 to 1.5% by weight, more specifically 0.05 to 1% by weight based on the total weight of the epoxy resin composition. In the above range, the curing of the epoxy resin composition is promoted and the curing degree is also good.
Coupling agent
The epoxy resin composition for sealing a semiconductor device may further comprise a coupling agent. The coupling agent may be a silane coupling agent. The silane coupling agent that can be used is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler so as to improve the interface strength between the epoxy resin and the inorganic filler. Examples thereof include epoxy silane, aminosilane, ureidosilane, mercaptosilane, . The coupling agent may be used alone or in combination.
The coupling agent may be used in an amount of 0.01 to 5% by weight, preferably 0.05 to 3% by weight based on the total weight of the epoxy resin composition. More preferably 0.05 to 2% by weight. In the above range, the epoxy resin composition is excellent in the strength of the cured product.
coloring agent
The colorant can be used for laser marking of the semiconductor element sealing material.
The colorant may comprise a mixture of titanium nitride and titanium black (titanium black or titanium black). The mixture may contain titanium nitride in an amount of 40 to 80 wt% and titanium black in an amount of 20 to 60 wt%. In the above range, the epoxy resin composition does not cause defects during laser marking and may not cause problems such as generation of soot.
The mixture of titanium nitride and titanium black may be contained in an amount of 40 to 100% by weight of the colorant. In the above range, the epoxy resin composition does not cause defects during laser marking and may not cause problems such as generation of soot.
The average particle diameter of titanium nitride may be 50-150 nm, and the average particle diameter of titanium black may be 50-150 nm. In the above range, the colorant is advantageous in that it is well dispersed and does not aggregate with each other.
The mixture of titanium nitride and titanium black may be contained in the epoxy resin composition in an amount of more than 0 to 6% by weight, for example, 0.5 to 5.0% by weight. In the above range, the epoxy resin composition can be sufficiently laser-marked, and a clear marking characteristic can be obtained even at a low laser output during laser marking, and no problems such as generation of soot may occur.
The colorant may further comprise at least one of dicopper hydroxide phosphate, iron oxide, mica, carbon black, in addition to the mixture of titanium nitride and titanium black.
Phosphoric acid copper hydroxide increases laser markability, reduces soot generated by use of carbon black, and improves reliability and moldability.
The weight average molecular weight of the copper phosphate hydroxide may be 100 to 500 g / mol. Within the above range, the laser markability of the epoxy resin composition can be enhanced, and reliability and moldability can be improved.
Phosphoric acid copper hydroxide may have a bulk density of 500 to 700 g / l. Within the above range, the epoxy resin composition can enhance the laser marking property and improve the reliability and moldability.
The copper phosphate hydroxide may have an average particle diameter (d50) of 1 탆 to 5 탆. In the above range, it may be usable in an epoxy resin composition.
Phosphorus hydroxide can be represented by the formula of Cu 3 (PO 4 ) 2揃 Cu (OH) 2 . Phosphoric acid copper hydroxide is a commercially sold product, and FABULASE 322 can be used.
The phosphoric acid copper hydroxide may be contained in the epoxy resin composition in an amount of 0 to 0.25% by weight, for example, in the range of 0 to 0.25% by weight, for example, 0.05 to 0.25% by weight. Within the above range, the laser marking property of the epoxy resin composition can be enhanced, and the marking effect equivalent to that of the existing carbon black can be realized.
Iron oxides are iron-oxidized and do not limit the oxidation number of iron. For example, the iron oxide may be FeO 3 , Fe 2 O 3, or the like.
The iron oxide may be contained in the epoxy resin composition in an amount of 0 to 1.5% by weight, for example, 0 to 1.5% by weight, for example, 0.1 to 2% by weight. Within the above range, the laser marking property of the epoxy resin composition can be enhanced, and the marking effect equivalent to that of the existing carbon black can be realized.
The mica may be included in the epoxy resin composition in an amount of 0 to 1.5% by weight, for example, 0 to 1.5% by weight, for example, 0.1 to 2% by weight. Within the above range, the laser marking property of the epoxy resin composition can be enhanced, and the marking effect equivalent to that of the existing carbon black can be realized.
The mixture of iron oxide and mica may be included in the epoxy resin composition in an amount of 0 to 1.5% by weight, for example, 0 to 1.5% by weight, for example, 0.3 to 1.5% by weight. Within the above range, the laser marking property of the epoxy resin composition can be enhanced, and the marking effect equivalent to that of the existing carbon black can be realized.
The carbon black may be contained in the epoxy resin composition in an amount of 0 to 1.5% by weight, for example, 0 to 1.5% by weight, specifically 0.1 to 1.5% by weight. In the above range, it is possible to prevent soot from occurring during laser marking without affecting laser marking of other coloring agents.
The mixture of iron oxide, mica and carbon black may be included in the epoxy resin composition in an amount of 0 to 1.6 wt%, for example, more than 0 to 1.6 wt%, for example, 0.1 to 1.6 wt%. In the above range, it is possible to prevent soot from occurring during laser marking without affecting laser marking of other coloring agents.
The colorant may be contained in an amount of 0.05 to 4.0% by weight in the epoxy resin composition. In the above range, incomplete marking of the epoxy resin composition can be prevented, marking can be prevented from occurring due to soot during the marking, and deterioration of electrical insulation of the resin composition can be prevented.
In addition, the epoxy resin composition of the present invention may contain a higher fatty acid, Higher fatty acid metal salts; And releasing agents such as ester wax and carnauba wax; Stress relaxants such as denatured silicone oil, silicone powder, and silicone resin; Antioxidants such as Tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane; And the like may be further contained as needed.
As a general method for producing an epoxy resin composition using the above-described raw materials, a predetermined mixing amount is uniformly and sufficiently mixed using a Hensel mixer or a Lodige mixer, followed by roll-milling ) Or a kneader, and then cooled and pulverized to obtain a final powder product.
The above-mentioned epoxy resin composition was molded under the conditions of 175 캜, a conveying pressure of 9 MPa, a conveying speed of 1 mm / sec, and a curing time of 120 seconds to prepare a circular specimen having a diameter of 50 mm and a thickness of 3.2 mm and cured at 175 캜 for 4 hours The lightness L of the specimen may be 32 or less, for example, 26 to 32, specifically 27 to 31.5, more specifically 28 to 31, as measured by a colorimeter (Minolta-3700, Minolta Co.). The lower the brightness (L) value, the better the shielding power. In the above range, the epoxy resin composition cured product is excellent in shielding ability, and the semiconductor device is suitable as a sealing composition and has an excellent processability.
As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method can be generally used. However, it is also possible to perform molding by an injection molding method or a casting method. The epoxy resin composition is led by a copper-based lead frame (for example, a silver-plated copper lead frame), a nickel alloy-based lead frame, and a lead frame containing nickel and palladium. A lead frame plated with at least one of gold (Au), and a PCB or the like to seal the semiconductor element.
Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.
The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.
Example
(A) a second epoxy resin
Biphenyl type epoxy resin: YX-4000H product (refractive index: 1.41) manufactured by Japan Epoxy Resin was used.
(B) a first epoxy resin
(b1) a first epoxy resin represented by the following formula (7-1) was used. (Refractive index: 1.79)
[Formula 7-1]
(The average value of n in the above formula (7-1) is 1 to 7)
(b2) a first epoxy resin represented by the following formula (7-2) was used. (Refractive index: 1.83)
[Formula 7-2]
(B ') EPPN-501H resin manufactured by Nippon Kayaku was used.
(C) Curing agent
(c1) Phenol novolac phenolic resin: H-4 product manufactured by Meiwa Chem was used.
(c2) Multifunctional phenol resin: MEH-7500-3S manufactured by Meiwa Chem was used.
(D) inorganic filler: silica (spherical fused silica having an average particle diameter of 20 탆 and spherical fused silica having an average particle diameter of 0.5 탆 mixed at a ratio of 9: 1)
(E) Curing accelerator: 0.048 wt% of 2-phenyl-4-methylimidazole (2P4MHZ) manufactured by Nippon-Gosei and 0.152 wt% of a phosphorus potential catalyst were used.
(F) Coupling agent
(f1) Epoxy silane: S-510 product manufactured in CHISSO was used.
(f2) Aminosilane: Y-9669 manufactured by Shin Etsu was used.
(G) Colorant
Carbon black: MA-600B manufactured by Mitsubishi Chemical Co. was used.
(H) Release agent: Carnauba wax was used.
Examples 1 to 5 and Comparative Example 1
(KEUM SUNG MACHINERY CO., LTD. (KSM-22)) at 25 to 30 ° C for 30 minutes in accordance with the composition shown in Table 1 below. The mixture was then homogenized by using a continuous kneader. Melt-kneaded at 110 DEG C for 30 minutes, cooled to 10 to 15 DEG C and pulverized to prepare an epoxy resin composition for sealing a semiconductor device.
(Table 1 is expressed in% by weight).
The epoxy resin composition for sealing semiconductor devices prepared above was evaluated for physical properties by the following methods, and the results are shown in Table 2 below.
Property evaluation method
(1) Lightness (L): A circular specimen having a diameter of 50 mm and a thickness of 3.2 mm was prepared by molding the epoxy resin composition under the conditions of 175 캜, a conveying pressure of 9 MPa, a conveying speed of 1 mm / sec, and a curing time of 120 seconds. (L) value was measured with a colorimeter (Minolta-3700, Minolta Co.) for a sample cured for 4 hours. The lower the brightness (L) value, the better the shielding power.
(2) Spiral flow (cm): A mold for spiral flow measurement according to EMMI-1-66 using a low pressure transfer molding machine was subjected to conditions of a mold temperature of 175 ° C, 70 kgf / cm 2 , an injection pressure of 9 MPa and a curing time of 90 seconds , And the flow length was measured. The higher the measured value, the better the fluidity.
(3) Evaluation of void: Void evaluation (Moldability test): 200 pieces of each MUF package were manufactured by molding with epoxy resin composition by MPS (Multi Plunger System) molding machine at 175 캜 for 120 seconds by transfer molding. Cured at 175 ° C for 2 hours and then cooled to room temperature. Thereafter, the number of voids observed in the package was measured using visual and non-destructive testing equipment (C-SAM).
As shown in Table 2, it can be seen that the embodiment containing the first epoxy resin of the present invention has excellent shielding power without deteriorating other properties such as fluidity and void evaluation.
While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are in all respects illustrative and not restrictive.
Claims (15)
Wherein the epoxy resin comprises a first epoxy resin comprising a unit represented by the following formula (1): < EMI ID =
[Chemical Formula 1]
(Wherein M 1 is an arylene group having 6 to 20 carbon atoms, an alkylarylene group having 7 to 20 carbon atoms, or an arylalkylene group having 7 to 20 carbon atoms,
M 2 is an oxygen-substituted or unsubstituted hydrocarbon group having 1 to 5 carbon atoms or a hydrocarbon group having 1 to 5 carbon atoms substituted with a 2,3-epoxy-propanoxyphenyl group,
Y are each independently
m is an integer of 1 to 4, n is an integer of 1 to 10, and * is a binding site).
(2)
A halogen atom or an alkyl group having 1 to 5 carbon atoms, M 3 is a single bond or an alkylene group having 1 to 5 carbon atoms, h is 0 or 1, and Z 1 and Z 2 are each independently hydrogen, a halogen atom or an alkyl group having 1 to 5 carbon atoms, * Is the binding site).
[Formula 3-1]
[Formula 3-2]
[Formula 3-3]
(In the formulas (3-1) to (3-3), Y is independently an aromatic substituent or a heteroaromatic substituent, j is an integer of 1 or 2, and * is a bonding site).
Further comprising a second epoxy resin excluding the first epoxy resin.
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