KR20160056500A - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same - Google Patents
Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same Download PDFInfo
- Publication number
- KR20160056500A KR20160056500A KR1020140156438A KR20140156438A KR20160056500A KR 20160056500 A KR20160056500 A KR 20160056500A KR 1020140156438 A KR1020140156438 A KR 1020140156438A KR 20140156438 A KR20140156438 A KR 20140156438A KR 20160056500 A KR20160056500 A KR 20160056500A
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- resin composition
- semiconductor device
- weight
- sealing
- Prior art date
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 113
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 113
- 239000000203 mixture Substances 0.000 title claims abstract description 92
- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000007789 sealing Methods 0.000 claims abstract description 28
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 23
- 239000000126 substance Substances 0.000 claims abstract description 21
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- 239000011256 inorganic filler Substances 0.000 claims abstract description 13
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 13
- 125000000962 organic group Chemical group 0.000 claims abstract description 10
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 4
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 4
- -1 polycyclic siloxane Chemical class 0.000 claims description 20
- 229920001296 polysiloxane Polymers 0.000 claims description 14
- 239000003086 colorant Substances 0.000 claims description 11
- 239000007822 coupling agent Substances 0.000 claims description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 claims description 6
- 125000002897 diene group Chemical group 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 19
- 230000001070 adhesive effect Effects 0.000 abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000005011 phenolic resin Substances 0.000 description 14
- 238000010330 laser marking Methods 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 11
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical class C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 10
- 229920003986 novolac Polymers 0.000 description 10
- 239000006229 carbon black Substances 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 7
- 239000005350 fused silica glass Substances 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 239000004071 soot Substances 0.000 description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000002708 enhancing effect Effects 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 235000013980 iron oxide Nutrition 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000006459 hydrosilylation reaction Methods 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 5
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- OHMUBWQNHUTKMH-UHFFFAOYSA-L [OH-].[Cu+2].P(O)(O)(O)=O.[OH-] Chemical compound [OH-].[Cu+2].P(O)(O)(O)=O.[OH-] OHMUBWQNHUTKMH-UHFFFAOYSA-L 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000010445 mica Substances 0.000 description 4
- 229910052618 mica group Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001639 boron compounds Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 150000002903 organophosphorus compounds Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- SGUVLZREKBPKCE-UHFFFAOYSA-N 1,5-diazabicyclo[4.3.0]-non-5-ene Chemical compound C1CCN=C2CCCN21 SGUVLZREKBPKCE-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- DEPDDPLQZYCHOH-UHFFFAOYSA-N 1h-imidazol-2-amine Chemical compound NC1=NC=CN1 DEPDDPLQZYCHOH-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000004594 Masterbatch (MB) Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- YXHUUJPFJXLPQQ-UHFFFAOYSA-J P(=O)([O-])([O-])[O-].[OH-].[Cu+4] Chemical compound P(=O)([O-])([O-])[O-].[OH-].[Cu+4] YXHUUJPFJXLPQQ-UHFFFAOYSA-J 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 150000001993 dienes Chemical class 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- BDHGFCVQWMDIQX-UHFFFAOYSA-N 1-ethenyl-2-methylimidazole Chemical compound CC1=NC=CN1C=C BDHGFCVQWMDIQX-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- CIPOCPJRYUFXLL-UHFFFAOYSA-N 2,3,4-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C(CN(C)C)=C1CN(C)C CIPOCPJRYUFXLL-UHFFFAOYSA-N 0.000 description 1
- LJBWJFWNFUKAGS-UHFFFAOYSA-N 2-[bis(2-hydroxyphenyl)methyl]phenol Chemical compound OC1=CC=CC=C1C(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LJBWJFWNFUKAGS-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- BGYHLZZASRKEJE-UHFFFAOYSA-N [3-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]-2,2-bis[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxymethyl]propyl] 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCC(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 BGYHLZZASRKEJE-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- LDKSTCHEYCNPDS-UHFFFAOYSA-L carbon monoxide;dichloroplatinum Chemical compound O=C=[Pt](Cl)(Cl)=C=O LDKSTCHEYCNPDS-UHFFFAOYSA-L 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- XEHUIDSUOAGHBW-UHFFFAOYSA-N chromium;pentane-2,4-dione Chemical compound [Cr].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O XEHUIDSUOAGHBW-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- JJRDHFIVAPVZJN-UHFFFAOYSA-N cyclotrisiloxane Chemical compound O1[SiH2]O[SiH2]O[SiH2]1 JJRDHFIVAPVZJN-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- WCMHCPWEQCWRSR-UHFFFAOYSA-J dicopper;hydroxide;phosphate Chemical compound [OH-].[Cu+2].[Cu+2].[O-]P([O-])([O-])=O WCMHCPWEQCWRSR-UHFFFAOYSA-J 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- IMHDGJOMLMDPJN-UHFFFAOYSA-N dihydroxybiphenyl Natural products OC1=CC=CC=C1C1=CC=CC=C1O IMHDGJOMLMDPJN-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000006735 epoxidation reaction Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- JDVIRCVIXCMTPU-UHFFFAOYSA-N ethanamine;trifluoroborane Chemical compound CCN.FB(F)F JDVIRCVIXCMTPU-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- AVGTYNJIWPQPIH-UHFFFAOYSA-N hexan-1-amine;trifluoroborane Chemical compound FB(F)F.CCCCCCN AVGTYNJIWPQPIH-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- VBMVTYDPPZVILR-UHFFFAOYSA-N iron(2+);oxygen(2-) Chemical class [O-2].[Fe+2] VBMVTYDPPZVILR-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 1
- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical compound [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
- C08G59/4085—Curing agents not provided for by the groups C08G59/42 - C08G59/66 silicon containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/10—Epoxy resins modified by unsaturated compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
TECHNICAL FIELD The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed by using the same.
In a new type of package such as a surface mount type BOC (Boron On Chip), MCP (Multi Chip Package), uLGA (Mirco Land Grid Array) and FCFBGA (Flip Chip Fine Ball Grid Array) The thickness of the portion occupied by the composition may be thinned to a hundred or several tens of microns. As a result, pores are formed at the time of sealing of the package, and moldability and reliability are frequently caused, so that moldability and adhesive strength are required. Also, it is necessary to improve the adhesion between the epoxy resin composition and the photo imageable solder resist mask (PSR) layer of the PCB due to the omission of the plasma process during the assembly of the surface mount type package.
On the other hand, the silicone die adhesives used in the semiconductor field are quick-curing, unlike the epoxy curing die adhesives, and the adhesive force is manifested by instantaneous pressure and heat. In recent years, in order to shorten the process time, it is a trend to shorten the process yield by using a silicone-based die adhesive instead of an epoxy curing die adhesive which takes a lot of time for the curing process. Therefore, it is necessary to develop an epoxy resin composition having excellent moldability and improved adhesion between a silicone-based die adhesive and EMC (Epoxy Molding Compound).
An object of the present invention is to provide an epoxy resin composition for sealing a semiconductor element having excellent adhesive force and good moldability and a semiconductor element sealed by using the composition.
Another object of the present invention is to provide an epoxy resin composition for semiconductor device encapsulation excellent in crack resistance, hardenability and adhesive force and a semiconductor element sealed by using the same.
The above and other objects of the present invention can be achieved by the present invention described below.
One aspect of the present invention relates to an epoxy resin composition for sealing a semiconductor device.
According to one embodiment, the epoxy resin composition for encapsulating semiconductor devices comprises an epoxy resin, a curing agent, an inorganic filler, and a polycyclic siloxane, and the polycyclic siloxane includes a compound represented by the following formula (1).
[Chemical Formula 1]
(Wherein R 1 is an organic group having 2 to 20 carbon atoms having a terminal unsaturated group, R 2 is a hydrocarbon having 1 to 6 carbon atoms, and n is an integer of 2 to 8)
According to another embodiment, in the epoxy resin composition for sealing a semiconductor device, R 1 may be a vinyl group, a diene group or a (meth) acrylic group.
According to another embodiment, the epoxy resin composition may further include at least one hydro silicone compound represented by the following general formula (2).
(2)
(Wherein R 3 , R 4 and R 5 are each independently hydrogen or an organic group having 2 to 20 carbon atoms).
According to another embodiment, the epoxy resin composition may include 0.1 to 2% by weight of the polysaccharosiloxane based on the solids content of the composition.
According to another embodiment, the epoxy resin composition for encapsulating semiconductor devices comprises 2 to 17 wt% of the epoxy resin, 0.5 to 13 wt% of the curing agent, 70 to 95 wt% of the inorganic filler, and 0.1 to 2 wt% of the polycyclic siloxane % ≪ / RTI > by weight.
According to another embodiment, the epoxy resin composition for sealing a semiconductor element may further comprise a curing accelerator.
According to another embodiment, the epoxy resin composition for sealing a semiconductor element may further include at least one of a colorant and a coupling agent.
Another aspect of the present invention relates to a semiconductor device.
According to one embodiment, the semiconductor device may be sealed using any one of the above epoxy resin compositions for sealing semiconductor devices.
The present invention has an effect of providing an epoxy resin composition for sealing a semiconductor element having excellent adhesive strength, good moldability, excellent cracking resistance, hardenability and adhesion, and a semiconductor element sealed by using the same.
The epoxy resin composition for semiconductor device encapsulation of the present invention comprises an epoxy resin, a curing agent, an inorganic filler, and a polycyclooxysilane.
Epoxy resin
And is not particularly limited as long as it is an epoxy resin generally used for sealing semiconductor devices. In an embodiment, an epoxy compound containing two or more epoxy groups in a molecule can be used. Examples of such epoxy resins include epoxy resins obtained by epoxidation of condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, multifunctional epoxy resins, naphthol novolak type epoxy resins Novolak type epoxy resins such as bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl epoxy resin, dicyclopentadiene epoxy resin, etc. .
For example, a phenolic aralkyl type epoxy resin having a novolac structure including a biphenyl derivative represented by the following formula (3) as an epoxy resin and a biphenyl type epoxy resin represented by the following formula (4) can be given:
(3)
(In the above formula (3), the average value of n is 1 to 7.)
[Chemical Formula 4]
(Wherein R is an alkyl group having 1 to 4 carbon atoms, and an average value of n is 0 to 7.)
Preferably, R is a methyl group or an ethyl group, more preferably a methyl group.
The phenol aralkyl type epoxy resin of the above formula (3) forms a structure having a biphenyl structure in the middle based on the phenol skeleton, and is excellent in hygroscopicity, toughness, oxidation resistance and crack resistance, and has low cross- There is an advantage that the flame resistance can be secured to a certain level by itself while forming a char. The biphenyl type epoxy resin represented by the above formula (4) is preferred from the viewpoint of enhancing the fluidity and reliability of the resin composition.
These epoxy resins may be used alone or in combination, and may be added to an epoxy resin by addition reaction with other components such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent and a melamine master batch Can also be used. In order to improve the moisture resistance, it is preferable to use a resin having a low chloride ion, sodium ion, and other ionic impurities contained in the epoxy resin.
The epoxy resin may be used in an amount of 2 to 15% by weight, preferably 3 to 15% by weight, and more preferably 3 to 12% by weight in the epoxy resin composition for encapsulating semiconductor devices.
Hardener
The curing agent is generally used for sealing semiconductor devices and is not particularly limited as long as it has two or more reactors.
Specific examples thereof include phenol aralkyl type phenol resin, phenol novolac type phenol resin, xylok type phenol resin, cresol novolak type phenol resin, naphthol type phenol resin, terpene type phenol resin, Novolac phenol resins synthesized from bisphenol A and resole, polyhydric phenol compounds including tris (hydroxyphenyl) methane, dihydroxybiphenyl, acid anhydrides including maleic anhydride and phthalic anhydride, And aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone. Particularly preferable examples of the curing agent include phenol aralkyl type phenol resins having a novolak structure including a biphenyl derivative in the molecule represented by the following formula (5), xylok type phenol resins represented by the following formula (6) And the like.
[Chemical Formula 5]
(In the above formula, the average value of n is 1 to 7.)
[Chemical Formula 6]
(Wherein the average value of n is 0 to 7).
(7)
(The average value of n in the above formula is 1 to 7.)
The phenol aralkyl type phenol resin of formula (5) reacts with the phenol aralkyl type epoxy resin to form a carbon layer (char), thereby blocking the heat and oxygen transfer to the periphery, thereby achieving flame retardancy. The xylock type phenol resin of Formula 6 is preferable in terms of enhancing the fluidity and reliability of the resin composition. The multifunctional phenol resin represented by the above formula (7) is preferable in terms of reinforcing the high temperature bending property of the epoxy resin composition.
These curing agents may be used alone or in combination, and they may also be used as an additive compound prepared by subjecting a curing agent to a linear reaction such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, and a stress relieving agent and a melt master batch.
The curing agent may be used in an amount of 0.5 to 13% by weight, preferably 1 to 10% by weight, and more preferably 2 to 8% by weight in the epoxy resin composition for encapsulating semiconductor devices.
The mixing ratio of the epoxy resin and the curing agent can be adjusted in accordance with the requirements of mechanical properties and moisture resistance reliability in the package. In a specific example, the chemical equivalent ratio of the epoxy resin to the curing agent may be from 0.95 to 2, preferably from 1 to 1.75.
Inorganic filler
The inorganic filler is a material used for improvement of mechanical properties and low stress of the epoxy resin composition. Examples of commonly used examples include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide and glass fiber.
In the specific example, fused silica having a low coefficient of linear expansion is used for low stress. The fused silica refers to amorphous silica having a true specific gravity of 2.3 or less and includes amorphous silica obtained by melting crystalline silica or synthesized from various raw materials. Although the shape and the particle diameter of the fused silica are not particularly limited, the fused silica containing 50 to 99% by weight of spherical fused silica having an average particle diameter of 5 to 30 탆 and the spherical fused silica having an average particle diameter of 0.001 to 1 탆 in an amount of 1 to 50% It is preferable that the mixture is contained in an amount of 40 to 100% by weight based on the total filler. The maximum particle diameter can be adjusted to any one of 45 탆, 55 탆 and 75 탆 according to the application. In the molten spherical silica, conductive carbon may be contained as a foreign substance on the surface of silica, but it is also important to select a substance having a small amount of polar foreign substances.
The amount of the inorganic filler to be used varies depending on required properties such as moldability, low stress, and high temperature strength. In a concrete example, it may be 70 to 95% by weight, preferably 75 to 92% by weight in the epoxy resin composition for sealing a semiconductor device.
Polycyclosiloxane
Polycyclosiloxane is represented by the following formula (1).
[Chemical Formula 1]
(Wherein R 1 is an organic group having 2 to 20 carbon atoms having a terminal unsaturated group, R 2 is a hydrocarbon having 1 to 6 carbon atoms, and n is an integer of 2 to 8)
According to an embodiment, n can be an integer from 2 to 8, preferably from 3 to 5, more preferably 4. In the above range, the moldability is excellent and the reliability between the silicone-based die adhesive and the epoxy resin composition is improved.
For example, the polycyclic siloxane may be a polycyclic siloxane having a structure of the following formulas 1-1 to 1-6, but is not necessarily limited thereto.
[Formula 1-1]
[Formula 1-2]
[Formula 1-3]
[Formula 1-4]
[Formula 1-5]
[Chemical Formula 1-6]
(In the above Chemical Formulas 1-1 to 1-6, R 1 is an organic group having 2 to 20 carbon atoms and having a terminal unsaturated group.)
According to another embodiment, R < 1 > is not limited as long as it has a terminal unsaturated group. Specifically, R 1 may be a vinyl group, a diene group or an acrylic group. A composition comprising an unsaturated group may be bonded via a hydrosilylation reaction with Si-H.
The epoxy resin composition containing the polycyclic siloxane is subjected to a hydrosilylation reaction between an unsaturated group such as a vinyl group, a diene group or an acrylic group of the polycyclic siloxane and a Si-H bond of the silicone-based die adhesive when the semiconductor device is sealed, There is an advantage that adhesion is improved. In addition, the unsaturated group may undergo hydrosilylation reaction with the Si-H bond in the epoxy resin composition for sealing a semiconductor element to increase cracking and adhesion.
Specifically, the epoxy resin composition for sealing the semiconductor element has the above R 1 may include a vinyl group, at least one diene-based or acrylic-based.
In an embodiment, the polycyclic siloxane containing the vinyl unsaturated hydrocarbon may be a polycyclic siloxane having a structure represented by any one of the following formulas 1-7 to 1-9, but is not limited thereto.
[Chemical Formula 1-7]
[Chemical Formula 1-8]
[Chemical Formula 1-9]
In another embodiment, the polycyclic siloxane containing the diene-based unsaturated hydrocarbon may be a polycyclic siloxane having a structure represented by any of the following formulas 1-10 to 1-12, but is not limited thereto.
[Chemical Formula 1-10]
[Formula 1-11]
[Formula 1-12]
In another embodiment, the polycyclic siloxane containing the (meth) acrylic unsaturated hydrocarbon may be a polycyclic siloxane having a structure represented by any of the following formulas 1-13 to 1-15, but is not limited thereto.
[Formula 1-13]
[Chemical Formula 1-14]
[Chemical Formula 1-15]
According to another embodiment, the epoxy resin composition for encapsulating semiconductor devices may contain 0.1 to 2% by weight, preferably 0.2 to 1.8% by weight, more preferably 0.4 to 1.5% by weight, based on the solid content of the polysaccharosiloxane, ≪ / RTI > Within the above range, the adhesive force and fluidity can be balanced.
According to another embodiment, the epoxy resin composition for encapsulating semiconductor devices comprises 2 to 17 wt% of the epoxy resin, 0.5 to 13 wt% of the curing agent, 70 to 95 wt% of the inorganic filler, and 0.1 to 2 wt% of the polycyclic siloxane % ≪ / RTI > by weight. Adhesion and spiral flow properties are good in the above range.
Hydro silicone compound
The epoxy resin composition may further comprise at least one hydro silicone compound represented by the following formula (2).
(2)
(Wherein R 3 , R 4 and R 5 are each independently hydrogen or an organic group having 1 to 20 carbon atoms, preferably an organic group having 1 to 15 carbon atoms, more preferably an organic group having 1 to 10 carbon atoms, to be)
The hydro-silicone compound is a compound having at least one Si-H bond. For example, R 3 , R 4 and R 5 are each independently methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, hexyl, cyclohexyl, phenyl, octyl, dodecyl, cetyl, and the like.
The Si-H bond of the hydro silicone compound performs a hydrosilylation reaction with the polycyclo siloxane, thereby increasing the crack resistance and adhesion at the time of curing the epoxy resin composition for sealing a semiconductor device.
The amount of the hydro silicone compound may be 20 to 80 parts by weight, preferably 30 to 70 parts by weight, based on 100 parts by weight of the epoxy resin composition for sealing a semiconductor device. In the above range, crack resistance and adhesion are excellent.
The epoxy resin composition for semiconductor device encapsulation may further comprise a catalyst. Catalysts are commonly used in hydrosilylation of silicone-vinyl and Si-H components. Specifically, the catalyst is selected from the group consisting of chloroplatinic acid, allylsiloxane-platinum complex catalyst, supported platinum catalyst, methylvinylsiloxane-platinum complex catalyst, dicarbonyldichloroplatinum and 2,4,6-triethyl- And a reaction product of cyclotrisiloxane.
The capacity of the catalyst is preferably such that the platinum content is 1-500 ppm, and more preferably 2-100 ppm, based on the total weight of the epoxy resin composition. The term "platinum content" means the content of platinum itself, even when platinum is present as a complex compound in the siloxane resin composition of the present invention.
In the epoxy resin composition, the molar ratio of the Si-H group of the silicone resin (s) to the vinyl group of the silicon-vinyl component (s) is 0.5-2.5, preferably 1.0-2.0.
Hardening accelerator
The epoxy resin composition for sealing a semiconductor device may further comprise a curing accelerator.
The curing accelerator is a substance that promotes the reaction between the epoxy resin and the curing agent. For example, tertiary amines, organometallic compounds, organic phosphorus compounds, imidazoles, and boron compounds can be used. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris ) Phenol and tri-2-ethylhexyl acid salt.
Organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organic phosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine Pin-1,4-benzoquinone adducts and the like. Imidazoles include, but are not limited to, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, Imidazole and the like. Examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine , Tetrafluoroborane amine, and the like. In addition, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene: DBN), 1,8-diazabicyclo [5.4. 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolak resin salts.
Particularly preferable curing accelerators include organic phosphorus compounds, boron compounds, amine-based compounds, and imidazole-based curing accelerators, either alone or in combination. As the curing accelerator, it is also possible to use an adduct made by reacting with an epoxy resin or a curing agent.
The amount of the curing accelerator used in the present invention may be 0.01 to 2% by weight, preferably 0.02 to 1.5% by weight, more preferably 0.05 to 1% by weight based on the total weight of the epoxy resin composition. In the above-mentioned range, the curing of the composition is accelerated and the curing degree is also good.
Coupling agent
The epoxy resin composition for sealing a semiconductor device may further comprise a coupling agent. The coupling agent may be a silane coupling agent. The silane coupling agent that can be used is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler so as to improve the interface strength between the epoxy resin and the inorganic filler. Examples of the silane coupling agent include epoxy silane, aminosilane, ureido silane, mercaptosilane, . The coupling agent may be used alone or in combination.
The coupling agent may be used in an amount of 0.01 to 5% by weight, preferably 0.05 to 3% by weight based on the total weight of the epoxy resin composition. More preferably from 0.1 to 2% by weight.
coloring agent
The colorant can be used for laser marking of the semiconductor element sealing material.
The colorant may comprise a mixture of titanium nitride and titanium black (titanium black or titanium black). The mixture may contain titanium nitride in an amount of 40 to 80 wt% and titanium black in an amount of 20 to 60 wt%. In the above range, defects do not occur during laser marking and problems such as generation of soot may not occur.
The mixture of titanium nitride and titanium black may be contained in an amount of 40 to 100% by weight of the colorant. In the above range, defects do not occur during laser marking and problems such as generation of soot may not occur.
The average particle diameter of titanium nitride may be 50-150 nm, and the average particle diameter of titanium black may be 50-150 nm.
The mixture of titanium nitride and titanium black may be contained in the epoxy resin composition in an amount of more than 0 to 6% by weight, for example, 0.5 to 5.0% by weight. In the above range, laser marking can be sufficiently performed, and sharp marking characteristics can be obtained even at a low laser output in laser marking, and there is no problem such as generation of soot.
The colorant may further comprise at least one of dicopper hydroxide phosphate, iron oxide, mica, carbon black, in addition to the mixture of titanium nitride and titanium black.
Phosphoric acid copper hydroxide increases laser markability, reduces soot generated by use of carbon black, and improves reliability and moldability.
The weight average molecular weight of the copper phosphate hydroxide may be 100 to 500 g / mol. Within the above range, the laser markability can be enhanced, and reliability and formability can be enhanced.
Phosphoric acid copper hydroxide may have a bulk density of 500 to 700 g / l. Within the above range, the laser markability can be enhanced, and reliability and formability can be enhanced.
The copper phosphate hydroxide may have an average particle diameter (d50) of 1 탆 to 5 탆. In the above range, it may be usable in an epoxy resin composition.
Phosphorus hydroxide can be represented by the formula Cu2HO5P. Phosphoric acid copper hydroxide is a commercially sold product, and FABULASE 322 can be used.
The phosphoric acid copper hydroxide may be contained in the epoxy resin composition in an amount of 0 to 0.25% by weight, for example, in the range of 0 to 0.25% by weight, for example, 0.05 to 0.25% by weight. In the above range, the marking effect equivalent to that of the existing carbon black can be realized by enhancing the laser marking property.
Iron oxides are iron-oxidized and do not limit the oxidation number of iron. For example, the iron oxide may be FeO3, Fe2O3, or the like.
The iron oxide may be contained in the epoxy resin composition in an amount of 0 to 1.5% by weight, for example, 0 to 1.5% by weight, for example, 0.1 to 2% by weight. In the above range, the marking effect equivalent to that of the existing carbon black can be realized by enhancing the laser marking property.
The mica may be included in the epoxy resin composition in an amount of 0 to 1.5% by weight, for example, 0 to 1.5% by weight, for example, 0.1 to 2% by weight. In the above range, the marking effect equivalent to that of the existing carbon black can be realized by enhancing the laser marking property.
The mixture of iron oxide and mica may be included in the epoxy resin composition in an amount of 0 to 1.5% by weight, for example, 0 to 1.5% by weight, for example, 0.3 to 1.5% by weight. In the above range, the marking effect equivalent to that of the existing carbon black can be realized by enhancing the laser marking property.
Carbon black, which is conventionally used as a colorant, may be contained in an amount of 0 to 1.5% by weight, for example, 0 to 1.5% by weight, for example, 0.1 to 1.5% by weight in the epoxy resin composition. In the above range, it is possible to prevent soot from occurring during laser marking without affecting laser marking of other coloring agents.
The mixture of iron oxide, mica and carbon black may be included in the epoxy resin composition in an amount of 0 to 1.6 wt%, for example, more than 0 to 1.6 wt%, for example, 0.1 to 1.6 wt%. In the above range, it is possible to prevent soot from occurring during laser marking without affecting laser marking of other coloring agents.
The colorant may be contained in an amount of 0.05 to 4.0% by weight in the epoxy resin composition. In the above range, incomplete marking can be prevented from occurring, marking can be prevented from occurring due to occurrence of soot at the time of marking, and deterioration in electrical insulation of the resin composition can be prevented.
In addition, the epoxy resin composition of the present invention may contain a releasing agent such as a higher fatty acid, a higher fatty acid metal salt, and an ester-based wax, as long as the object of the present invention is not impaired; An antioxidant such as Tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane, and the like, .
As a general method for producing an epoxy resin composition using the above-described raw materials, a predetermined mixing amount is uniformly and sufficiently mixed using a Hensel mixer or a Lodige mixer, followed by roll-milling ) Or a kneader, and then cooled and pulverized to obtain a final powder product.
As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method can be generally used. However, it is also possible to perform molding by an injection molding method or a casting method. The epoxy resin composition is led by a copper-based lead frame (for example, a silver-plated copper lead frame), a nickel alloy-based leadframe, and a lead frame containing nickel and palladium. A lead frame plated with at least one of gold (Au), and a PCB or the like to seal the semiconductor element.
Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.
The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.
Example
(A) an epoxy resin
(a1) phenol aralkyl type epoxy resin: NC-3000 product manufactured by Nippon Kayaku was used.
(a2) Biphenyl type epoxy resin: YX-4000H manufactured by Japan Epoxy Resin was used.
(B) Curing agent
(b1) Multifunctional phenol resin: MEH-7500-3S manufactured by Meiwa kasei was used.
(b2) Phenol aralkyl type phenol resin: MEH-7851SS manufactured by Meiwa kasei was used.
(C) Inorganic filler: Silica having an average particle diameter of 10 탆 was used.
(D) Polycyclosiloxane
(d1-1) Polycyclosiloxane of the formula
(d1-2) Polycyclosiloxanes of the formula
(d1-3) Polycyclosiloxane of the formula
(d1-4) Polycyclosiloxanes of the formula
(d1-5) Polycyclosiloxanes of the formula
(d2-1) Polycyclosiloxanes of the formula
(d2-2) Polycyclosiloxane of the formula
(d2-3) Polycyclosiloxane of the formula
(E) Curing accelerator: Tetraphenylphosphonium-tetraphenylborate (TPP-K) produced by Hokko was used.
(F) Silane coupling agent: (f1) mercaptopropyltrimethoxysilane and (f2) N-phenyl- gamma -aminopropyltrimethoxysilane were mixed and used.
Examples 1 to 5 and Comparative Examples 1 to 2
The mixture was uniformly mixed using a Henschel mixer (KEUM SUNG MACHINERY CO. LTD. (KSM-22)) according to the composition shown in Table 1, and then melt kneaded at 90 to 110 캜 using a continuous kneader, To prepare an epoxy resin composition for element sealing.
The epoxy resin composition for sealing semiconductor devices prepared above was evaluated for physical properties by the following methods, and the results are shown in Table 2 below.
Property evaluation method
(1) Spiral flow (inch): A mold for spiral flow measurement according to EMMI-1-66 was used with a low pressure transfer molding machine. Mold temperatures of 175 ° C, 70 kgf / cm 2 , an injection pressure of 9 MPa and a curing time of 90 seconds The epoxy resin composition was injected and the flow length was measured. The higher the measured value, the better the fluidity.
(2) Gelation time: The epoxy resin composition was applied thinly at a thickness of 0.1 to 2 mm using a hot plate at 175 DEG C, and then moved on the applied epoxy resin composition using a metal probe having a diameter of 0.5 mm, Was measured as a time when the influence of the metal probe was remarkably reduced by the curing reaction of the resin composition.
(3) Adhesive force (kgf): A silicone-based die adhesive (DA-6633, Dow corning) was uniformly applied on the PSR layer of a PCB (200 FBGA, 0.22 t SSE) Was prepared by molding an epoxy resin composition having a diameter of 3 mm on a PCB coated with a 30 mm x 30 mm silicon-based die adhesive to obtain a cured specimen. The specimen was placed in an oven at 175 ° C and post-cured (PMC) for 4 hours The adhesive force was measured using a die shear test (Dage 4000, DS-200 load cell).
(4) Evaluation of crack resistance (reliability test): 128 semiconductor packages were assembled for each of the compositions prepared in the examples and the comparative examples, followed by post curing at 175 ° C for 4 hours. These semiconductor devices were dried at 125 캜 for 24 hours, then allowed to stand at 85 캜 / 85% relative humidity for 168 hours, and passed through IR reflow once at 260 캜 for 30 seconds. The presence or absence of cracks was evaluated using Scanning Acoustical Microscopy (C-SAM), a non-destructive testing machine.
(5) Hot Hardness: The 400FBGA was molded at 175 ° C for 60 seconds using a MPL (Multi Plunger System) molding machine. After 10 seconds of mold opening, the hardness of the cull portion was measured by a Shore D hardness meter .
(6) Glass transition temperature (Tg): Evaluated by TMA (Thermomechanical Analyzer).
As shown in Table 2, the epoxy resin compositions for semiconductor device encapsulation of Examples 1 to 5 had good moldability, excellent adhesion to the silicone-based die adhesive, excellent crack resistance and hardness, etc. have. On the other hand, it can be seen that Comparative Examples 1 and 2 which do not contain the polycyclo siloxane of the present invention are not.
While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are in all respects illustrative and not restrictive.
Claims (8)
Wherein the polycyclosiloxane comprises a compound represented by the following Formula 1:
[Chemical Formula 1]
(Wherein R 1 is an organic group having 2 to 20 carbon atoms having a terminal unsaturated group, R 2 is a hydrocarbon having 1 to 6 carbon atoms, and n is an integer of 2 to 8).
(2)
(Wherein R 3 , R 4 and R 5 are each independently hydrogen or an organic group having 2 to 20 carbon atoms).
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