KR101570558B1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device package using the same - Google Patents
Epoxy resin composition for encapsulating semiconductor device and semiconductor device package using the same Download PDFInfo
- Publication number
- KR101570558B1 KR101570558B1 KR1020120152613A KR20120152613A KR101570558B1 KR 101570558 B1 KR101570558 B1 KR 101570558B1 KR 1020120152613 A KR1020120152613 A KR 1020120152613A KR 20120152613 A KR20120152613 A KR 20120152613A KR 101570558 B1 KR101570558 B1 KR 101570558B1
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- weight
- resin composition
- formula
- curing
- Prior art date
Links
Abstract
The present invention provides an epoxy resin composition for encapsulating semiconductor devices comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler and a dispersing agent, wherein the epoxy resin comprises an epoxy resin represented by the formula (1) Wherein the curing accelerator comprises an imidazole-based curing accelerator and the dispersant comprises a dispersant having a phosphate ester bond, and a semiconductor element sealed using the epoxy resin composition for sealing a semiconductor element .
Description
The present invention relates to an epoxy resin composition for sealing semiconductor devices and a semiconductor device using the same.
2. Description of the Related Art [0002] In recent years, a package method for protecting a semiconductor device from an external environment has been developed in a high-density packaging (i.e., a surface mount ), And miniaturization and thinning are accelerating. In addition, the use of lead (Pb) is prohibited in a solder process, which is a later process, as environment-related regulations tighten in sealing semiconductor devices. As a result, studies on Pb-free solder .
At present, there are tin (Sn), bismuth (Bi), silver (Ag) and the like as a lead-free solder material to be used in place of lead (Pb). When such a material is used, It should be higher. Here, in order to protect the semiconductor device from the external environment, it is mainly sealed by using an epoxy resin composition. When the semiconductor device sealed with the epoxy resin composition is put into the lead-free soldering process as described above, the defective occurrence rate of the semiconductor element becomes high, It is required to improve the solder resistance by the composition. That is, when a semiconductor element sealed with an epoxy resin composition having a high water absorption rate (water absorption ratio) is put into a lead-free soldering process, stress is generated due to explosion of water present in the semiconductor element due to a temperature rise in the soldering process It is difficult to obtain a reliable semiconductor element such as a crack in the semiconductor element or peeling between the semiconductor element and the epoxy resin composition, so that it is required to improve the solderability by the epoxy resin composition.
On the other hand, the mainstream of a double-sided encapsulation type semiconductor device package such as DIP, SOP, QFP and the like, such as QFN, BGA or the like, by multi- At this time, in the sectionally sealed semiconductor device package, since only one side of the substrate is sealed with the epoxy resin composition, warping of the package becomes a big problem. That is, when only one side of the substrate is sealed with an epoxy resin composition, the package is bent asymmetrically. When the package is bent in this way, stress is applied to the semiconductor element or terminal bonding between the semiconductor element and the substrate becomes incomplete, There is a problem that the connection becomes poor. Also, the contraction ratio between the epoxy resin composition, the substrate, and the semiconductor device varies depending on the difference in the coefficient of linear expansion. Such a difference in shrinkage ratio also causes package deflection, which causes the above problems.
Therefore, in order to solve the bending problem of the package, a technique of increasing the glass transition temperature and reducing the linear expansion coefficient by using triphenol methane type epoxy resin and triphenolmethane type phenolic resin has been proposed. However, the proposed technique can solve the bending problem of the package, but since the water absorption rate of the epoxy resin composition is very high, the solderability is deteriorated, so that cracks occur in the semiconductor element or peeling occurs between the semiconductor element and the epoxy resin composition The problem still remains.
In addition to the proposed technique, the use of an inorganic filler is increased to reduce the linear expansion coefficient to improve the bending problem of the package. However, since the flowability of the epoxy resin composition is lowered and the wire sweep (sealing operation of semiconductor devices) There is a possibility that the filling of the package can not be completed, and therefore, there is a limit in solving the bending problem of the package.
Disclosure of the Invention The present invention has been made to solve the above-mentioned problems and it is an object of the present invention to provide an epoxy resin composition for semiconductor device encapsulation excellent in flow characteristic bending property and solder resistance required in a lead-free solder process, And an object of the present invention is to provide an element package.
An epoxy resin composition for sealing a semiconductor element, which is one aspect of the present invention, comprises an epoxy resin represented by the following formula (1); A curing agent represented by the following formula (2); An imidazole-based curing accelerator; A dispersant having a phosphate ester bond; And inorganic fillers.
[Chemical Formula 1]
(Wherein n and m are each 0 or 1)
(2)
(In the formula, n > 0, m > 0, and the average value of n + m is 1 to 10)
In another aspect of the present invention, the semiconductor element can be sealed using the epoxy resin composition for sealing the semiconductor element.
The epoxy resin composition for semiconductor device encapsulation of the present invention has a low glass transition temperature and a low coefficient of linear expansion, so that a low shrinkage ratio can be obtained and the bending property of the semiconductor device package can be improved. Further, by using an epoxy resin having a hydrophobic naphthalene skeleton, the water absorption rate is minimized, and the solder resistance required in the lead-free soldering process can be improved. In addition, since the curing reaction and flow characteristics are excellent, excellent moldability can be exhibited at the time of molding (sealing) the semiconductor device.
An epoxy resin composition for sealing a semiconductor element (hereinafter referred to as "epoxy resin composition") which is one aspect of the present invention comprises an epoxy resin represented by the following formula (1), a curing agent represented by the following formula (2) An imidazole-based curing accelerator; A dispersant having a phosphate ester bond; And inorganic fillers.
[Chemical Formula 1]
(Wherein n and m are each 0 or 1)
(2)
(In the formula, n > 0, m > 0, and the average value of n + m is 1 to 10)
≪ Epoxy resin &
The epoxy resin represented by Formula 1 is composed of a naphthalene skeleton and exhibits a high glass transition temperature (Tg). In general, an epoxy resin having a skeleton with excellent rigid symmetry exhibits a high glass transition temperature. In the epoxy resin represented by the above formula (1) of the present invention, the naphthalene skeleton is firmly bonded, and the symmetry of the entire molecule is also excellent Resulting in a high glass transition temperature.
Here, the higher the glass transition temperature, the lower the coefficient of linear expansion of the epoxy resin, and the lower the shrinkage ratio with the lower coefficient of linear expansion. The epoxy resin of the present invention exhibits a high glass transition temperature The low shrinkage ratio can be obtained and the bending property of the semiconductor device package can be improved.
That is, one of the causes of bending of the semiconductor device package is due to the difference in shrinkage ratio of the epoxy resin sealed with a semiconductor member (e.g., a substrate or a chip or the like), and the shrinkage rate of the semiconductor member is lower than that of the epoxy resin . By the way, since the epoxy resin of the present invention can obtain a low shrinkage ratio for the reason as described above, the shrinkage balance with the semiconductor member can be balanced, and the bending property of the semiconductor device package can be improved.
Since the naphthalene is hydrophobic in the epoxy resin structure of Formula 1, the water absorption rate of the epoxy resin is lowered to minimize the amount of moisture contained in the epoxy resin, thereby improving solder resistance required in the lead-free soldering process .
On the other hand, when n = 1 and m = 1, the epoxy resin of Formula 1 has the highest cross-linking density and low shrinkage and flexural properties. However, since the viscosity of the epoxy resin may decrease as the viscosity increases, n = 0 and m = 1 (or n = 1 and m = 0) is mixed with an epoxy resin having n = 0 and m = 0.
That is, an epoxy resin in which n + m is 0 or 1 in Formula 1 may be preferable.
Also, it may be preferable to use a mixture of an epoxy resin having n + m = 0 in Formula 1 and an epoxy resin having n + m = 1 in Formula 1.
In the present invention, an epoxy resin other than the epoxy resin represented by the above formula (1) may be used in combination. The epoxy resin that can be used in combination with the epoxy resin is not particularly limited, but an epoxy resin containing two or more epoxy groups in one molecule is preferable. Specific examples thereof include phenol aralkyl type epoxy resin, biphenyl aralkyl type epoxy resin, cresol novolak type epoxy A phenol novolak type epoxy resin, a biphenyl type epoxy resin, a bisphenol type epoxy resin, a dicyclopentadiene type epoxy resin, a naphthalene type epoxy resin and a triphenolmethane type epoxy resin.
When other epoxy resin than the epoxy resin represented by Formula 1 is used in combination, the epoxy resin represented by Formula 1 may be included in an amount of 40 to 100 parts by weight based on 100 parts by weight of epoxy resin. The desired shrinkage ratio can be obtained within the above range and the bending property may not be deteriorated.
The epoxy resin represented by Formula 1 may be contained in an amount of 3-14 wt%, preferably 4-10 wt%, of the epoxy resin composition.
The epoxy resin of the present invention (the epoxy resin alone or the epoxy resin represented by the above formula (1) and the other epoxy resin in combination with the other epoxy resin) of the present invention is contained in an amount of 3 to 14 wt% based on the total weight of the epoxy resin composition %, Preferably 6 to 10 wt%. In the above range, there is no problem of wire sweep and the like, and the shrinkage ratio and the water absorption ratio do not excessively increase during molding so that there is no problem that the bending property and the reliability of the package are deteriorated.
<Curing agent>
The curing agent represented by Formula 2 is composed of a triphenol methane skeleton and a phenol novolak skeleton. In general, the curing agent influences the physical properties of the cured product produced after the curing reaction, depending on the type and amount of the curing agent. Here, since the curing agent of the present invention comprising a triphenol methane skeleton and a phenol novolak skeleton has a short cross-linking point interval, the cross-linking density of the curing agent increases when the epoxy resin is reacted with the epoxy resin represented by Formula 1, . If the glass transition temperature of the cured product is increased by using the curing agent represented by the above formula (2), a lower shrinkage factor can be obtained as the coefficient of linear expansion is lowered, and as a result, warping of the semiconductor device package can be suppressed .
On the other hand, if the epoxy resin has improper curing speed and curing behavior, defective molding such as surface voids, internal voids, gate voids, and sticking may occur in the process of forming a semiconductor device. If the molding is poor in this way, it becomes difficult to obtain a reliable semiconductor device. In addition, if the curing reaction does not occur well and the curing time becomes long, the workability is lowered and the production efficiency is lowered accordingly. However, when the curing agent of the formula (2) is used in the epoxy resin represented by the formula (1), the curing reaction is excellent and the curing rate and the curing behavior are appropriately exhibited. Production efficiency can also be improved.
In the present invention, other curing agents other than the curing agent represented by the above-mentioned general formula (2) may be used in combination. In this case, the curing agent which can be used in combination is not particularly limited, but a curing agent containing two or more phenol groups in one molecule is preferable. Specific examples thereof include phenol aralkyl type phenol resin, biphenyl aralkyl type phenol resin, phenol novolak type resin, A phenol resin, a phenol resin, a phenol resin, a phenol resin, a phenol resin, a phenol resin, and a phenol resin.
When a curing agent other than the curing agent represented by the general formula (2) is used, the curing agent represented by the general formula (2) is preferably contained in an amount of 40 to 100 parts by weight, preferably 45 to 75 parts by weight, based on 100 parts by weight of the total weight of the curing agent . In the above range, there is no problem that the curing time is prolonged and the moldability and workability are inferior.
The curing agent of Formula 2 may be included in the epoxy resin composition in an amount of 2-12 wt%, preferably 2-6 wt%.
In addition, the curing agent of the present invention (the curing agent alone or the curing agent obtained by using the curing agent represented by the above-mentioned general formula (2) and the other curing agent in combination) is 2 to 12% by weight based on the total weight of the epoxy resin composition 100 Is preferably contained in an amount of 3.5 to 6% by weight. In the above range, there is no problem that the curing time is prolonged, the moldability and workability are not deteriorated, the shrinkage ratio becomes excessively large, the flexural characteristics are lowered, and the curing reaction occurs too quickly, resulting in poor workability.
<Curing accelerator>
The imidazole-based curing accelerator accelerates the curing reaction between the epoxy resin represented by Formula 1 and the curing agent represented by Formula 2, thereby improving the moldability and workability of the epoxy resin composition. In particular, when an imidazole-based curing accelerator is used, the glass transition temperature after curing of the epoxy resin cured product becomes high, and as the coefficient of linear expansion becomes low, a low shrinkage ratio can be obtained and the flexural characteristics of the semiconductor device package can be suppressed.
On the other hand, if the epoxy resin has improper curing speed and curing behavior, defective molding such as surface voids, internal voids, gate voids, and sticking may occur in the process of forming a semiconductor device. If the molding is poor in this way, it becomes difficult to obtain a reliable semiconductor device. In addition, if the curing reaction does not occur well and the curing time becomes long, the workability is lowered and the production efficiency is lowered accordingly. However, when an imidazole-based curing accelerator is used, the present invention exhibits excellent curing reaction and exhibits an appropriate curing rate and curing behavior, so that it is excellent in moldability during molding of a semiconductor device, and workability and production efficiency can be improved.
The imidazole-based curing accelerator according to the present invention is not particularly limited, but specific examples thereof include 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, (1 ') - ethyl-s-triazine, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl Dihydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo [1,2-a] benzimidazole, and the like, and one or more of them can be used in combination. Among them, 2-phenyl-4-methyl-5-hydroxymethylimidazole is preferable in the balance of the flexural characteristics, the flowability at the time of molding, and the curing ability.
The imidazole-based curing accelerator may be included in the epoxy resin composition in an amount of 0.02-0.4 wt%, preferably 0.05-0.25 wt%.
The present invention may employ other curing accelerators in addition to the imidazole-based curing accelerator. The curing accelerator which can be used at this time is not particularly limited, and specific examples thereof include tertiary amines such as benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol and tri (dimethylaminomethyl) phenol; Organic phosphines such as triphenylphosphine, diphenylphosphine and phenylphosphine; Tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate; And one or more of these may be used in combination.
When other curing accelerators are used in combination with the imidazole-series curing accelerator, the imidazole-series curing accelerator is preferably 40 to 100 parts by weight, preferably 45 to 55 parts by weight, based on 100 parts by weight of the total amount of the curing accelerator. In the above range, the curing time is not prolonged, and moldability and workability can be prevented from being lowered.
The curing accelerator of the present invention (curing accelerator using the imidazole curing accelerator and the other curing accelerator in combination) is preferably 0.02 to 0.4 wt%, more preferably 0.15 to 0.25 wt%, based on the total weight of the epoxy resin composition Do. In the above range, there is no problem that the curing time is prolonged and the moldability and the workability are lowered, and there is no problem that the curing reaction progresses at an appropriate speed and the workability is deteriorated.
<With phosphate ester linkage Dispersant >
The dispersant improves the affinity between the epoxy resin, the curing agent, and the inorganic filler, which is an inorganic substance, so that the filler is well dispersed in the resin, thereby improving the fluidity of the epoxy resin composition. In particular, since the epoxy resin represented by Formula 1 and the curing agent represented by Formula 2 have a large number of functional groups in the molecule, the reactivity with the dispersant having phosphate ester bond is improved, thereby maximizing the effect of improving the fluidity of the epoxy resin composition.
The dispersant having a phosphoric acid ester bond is not particularly limited, and examples thereof include copolymers of saturated polyester having phosphoric acid ester bonds such as BYK-W995, BYK-W996 and BYK-W9010 manufactured by BYK-Chemie.
In addition, the dispersant having a phosphoric acid ester bond of the present invention preferably contains 0.05 to 1% by weight, preferably 0.2 to 0.5% by weight, based on the weight of the entire epoxy resin composition. Within the above range, there is an effect of improving the fluidity of the epoxy resin composition, and there may be no problem in moldability.
<Inorganic filler>
The inorganic filler is included to improve the water absorption and shrinkage of the epoxy resin represented by the above formula (1). As the inorganic filler, fused silica, crystalline silica, alumina, silicon nitride, aluminum nitride and the like can be mentioned, and it is preferable to use fused silica in terms of cost and mechanical property enhancement. Here, when fused silica is used, the shape and the particle diameter thereof are not particularly limited, but an average particle diameter of 0.1 mu m to 35 mu m is preferably used.
If such an inorganic filler is insufficiently contained, the shrinkage and absorption rate of the epoxy resin are increased to lower the bending property and the reliability of the package. If the filler is contained excessively, the flowability of the epoxy resin is lowered, and problems such as wire sweep It is preferable that the epoxy resin composition contains 80 to 92% by weight, preferably 85 to 90% by weight based on the total weight of the epoxy resin composition.
<Additives>
The epoxy resin composition according to the present invention may contain, if necessary, a coupling agent such as epoxy silane or mercaptosilane; Release agents such as natural waxes, synthetic waxes, higher fatty acids, higher fatty acid metal salts and esters; Coloring agents such as carbon black, organic dyes and inorganic dyes; Low stress agents such as silicone rubber, silicone oil, and silicone resin; Phosphazene; Zinc borate; Aluminum hydroxide; And a flame retardant such as magnesium hydroxide may further be used.
The additive may be contained in an amount of 0.1-5 wt%, preferably 0.1-2 wt%, of the epoxy resin composition.
The method of producing the epoxy resin composition of the present invention described above is not particularly limited, but generally, each raw material is uniformly mixed using a Henschel mixer or a super mixer, and then melt-kneaded with a roll mill or a kneader, To form a final powder. In this case, the melt-kneading is preferably carried out at 70 to 120 ° C for 3 to 15 minutes. If the melt-kneading temperature is too high or too long, the curing reaction proceeds and the flowability of the epoxy resin composition may be deteriorated. On the other hand, if the melt-kneading temperature is too low or too short, the dispersibility of the raw materials in the epoxy resin composition The curing reaction may be lowered or voids may be generated.
Meanwhile, the present invention can provide a semiconductor device package sealed with the epoxy resin composition described above. At this time, it is preferable that the semiconductor device package to be sealed has a sectional shape (for example, QFN, BGA, etc.). A method of sealing a semiconductor element is a method in which a low pressure transfer molding method is most commonly used, or a compression molding method, an injection molding method, a casting molding method, or the like may be used.
Here, the sealing process is not particularly limited, but the semiconductor device can be manufactured by sealing (curing) a semiconductor element with an epoxy resin composition manufactured using a molding machine (selected in accordance with a molding method), and then post-curing the molded semiconductor element package have. At this time, the temperature and time for the sealing molding are preferably from 160 to 190 DEG C for 50 to 120 seconds, and the temperature and time for post-curing are preferably from 160 to 190 DEG C for from 2 to 8 hours.
The sealed semiconductor element which is another aspect of the present invention may be one which is sealed using the epoxy resin composition for sealing the semiconductor element. As a method of sealing a semiconductor element using the epoxy resin composition, a conventionally known method can be used.
Hereinafter, the present invention will be described in more detail with reference to Examples and Experimental Examples, but the present invention is not limited to the following Examples and Experimental Examples.
[ Example 1 to 3 and Comparative Example 1 ~ 3] Preparation of Epoxy Resin Composition
Each component was weighed according to the composition shown in Table 1, and then uniformly mixed using a Henschel mixer to prepare a powdery first composition. Thereafter, the mixture was melted and kneaded at 100 ° C for 7 minutes using a continuous kneader, followed by cooling and pulverization to prepare an epoxy resin composition.
Methylimidazole 6 )
(week)
1) HP-4770, DIC. 2) YX-4000H, Japan Epoxy Resins.
3) EPPN-501H, Nippon Kayaku. 4) HE-910C-10, Air wate.r
5) MEH-7800SS, Meiwa Plastic Industries. 6) 2P4MHZ, NIPPON GOHSEI.
7) TPP, HOKKO CHEMICAL INDUSTRY. 8) BYK-W995, BYK-Chemie.
9) KBM-403, Shin-Etsu Chemical. 10) MA600, Mitsubishi Chemical.
11) Powderd Carnauba Wax No.1, S.KATO & CO.
[ Experimental Example ] Property evaluation
The epoxy resin compositions of Examples 1 to 3 and Comparative Examples 1 to 3 and the epoxy resin composition were molded and post-cured using an MPS (Multi Plunger System) molding machine to obtain various physical properties And the results are shown in Table 2.
1. Spiral Flow: A mold was manufactured based on the EMMI standard, and the flow length was evaluated at a molding temperature of 175 ° C and a molding pressure of 70 kgf / cm 2.
2. Hot Hardness: The hardness of the cull portion was measured by a Shore D hardness meter after 10 seconds after the mold was opened after molding 400FBGA at 175 ° C for 60 seconds using a MPL (Multi Plunger System) molding machine.
3. Glass transition temperature (Tg): Evaluated by TMA (Thermomechanical Analyzer).
4. High Temperature Flexural Modulus: A standard specimen (125 × 12.6 × 6.4 mm) was prepared in accordance with ASTM D-790, and then cured at 175 ° C. for 4 hours and then measured at 260 ° C. using a UTM (Universal Testing Machine).
5. Flexural properties: Molded at 175 ° C for 60 seconds using MPS (Multiplunger System) molding machine, and post cured at 175 ° C for 4 hours to produce 400FBGA (18 × 18mm) Type semiconductor device package was fabricated and measured by a non-contact type laser measuring instrument.
6. Moisture absorptivity: Moisture absorption rate was calculated using the mass value measured after measuring the mass after moisture absorption at 121 ° C, 100% RH (2 atmospheres) for 24 hours, and then waiting until it was cooled to room temperature.
7. Soldering Resistance: The 400 FBGA used for the flexural characteristics was dried at 125 캜 for 24 hours, subjected to moisture absorption treatment at 85 캜 and 60% relative humidity for 168 hours, and reflow treatment at 260 캜 for 10 seconds three times. The processed package was observed by peeling and cracking with SAT (Scanning Acoustic Tomograph), which is a non-destructive inspection, and the number of bad packages was examined.
(Based on 16 packages)
As shown in Table 2 above, Examples 1 to 3 using the epoxy resin represented by Formula 1, the curing agent represented by Formula 2, the imidazole-based curing accelerator, and the dispersant having phosphoric acid ester bond were compared with Comparative Examples. Characteristics, hardness, and solder resistance. In particular, it was found that Example 1 using the curing agent represented by the formula (2) in the epoxy resin represented by the formula (1) of the present invention exhibited better warping characteristics than Comparative example 2 using only the epoxy resin represented by the formula (1). It can be seen that the imidazole-based curing accelerator of the present invention binds to the epoxy resin represented by the general formula (1) to increase the glass transition temperature and to obtain a low shrinkage ratio.
On the other hand, Comparative Example 1 in which the epoxy resin represented by Formula 1 of the present invention was not used had a high glass transition temperature and a good warping property and a good degree of curing but a high moisture absorptivity.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. And the scope of the present invention is to be understood as the following claims and their equivalents.
Claims (9)
Wherein the epoxy resin comprises an epoxy resin represented by the following formula (1)
Wherein the curing agent comprises a curing agent represented by the following formula (2)
Wherein the curing accelerator comprises an imidazole-based curing accelerator,
Wherein the dispersant comprises a saturated polyester copolymer having a phosphate ester bond.
[Chemical Formula 1]
(Wherein n and m are each 0 or 1)
(2)
(Where n > 0, m > 0, and the average value of n + m is 1 to 10).
3 to 14% by weight, based on 100% by weight of the total epoxy resin composition, of the epoxy resin; 2 to 12% by weight of the curing agent; 0.02 to 0.4% by weight of the curing accelerator; 0.05 to 1% by weight of a dispersant having the phosphate ester bond; And 80 to 92% by weight of the inorganic filler.
Wherein the epoxy resin represented by Formula 1 is contained in an amount of 40 to 100 parts by weight based on 100 parts by weight of the total weight of the epoxy resin.
Wherein the curing agent represented by Formula 2 is contained in an amount of 40 to 100 parts by weight based on 100 parts by weight of the total weight of the curing agent.
Wherein the imidazole-based curing accelerator comprises 2-phenyl-4-methyl-5-hydroxymethylimidazole.
Wherein the imidazole-based curing accelerator is included in an amount of 40 to 100 parts by weight based on 100 parts by weight of the total weight of the curing accelerator.
Wherein the epoxy resin has n + m of 0 or 1 in the formula (1).
Wherein the epoxy resin comprises a mixture of an epoxy resin in which n + m is 0 in Formula 1 and an epoxy resin in which n + m is 1. 2. The epoxy resin composition according to claim 1,
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120152613A KR101570558B1 (en) | 2012-12-24 | 2012-12-24 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device package using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120152613A KR101570558B1 (en) | 2012-12-24 | 2012-12-24 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device package using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140082522A KR20140082522A (en) | 2014-07-02 |
| KR101570558B1 true KR101570558B1 (en) | 2015-11-19 |
Family
ID=51733437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120152613A KR101570558B1 (en) | 2012-12-24 | 2012-12-24 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device package using the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101570558B1 (en) |
-
2012
- 2012-12-24 KR KR1020120152613A patent/KR101570558B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140082522A (en) | 2014-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101081619B1 (en) | Epoxy resin composition and semiconductor device | |
| KR100834351B1 (en) | Epoxy Resin Composition for Encapsulating Multichip?Package and the Multichip?Package using the same | |
| US10636712B2 (en) | Epoxy resin composition for sealing semiconductor device, and semiconductor device sealed by using same | |
| US20140179832A1 (en) | Epoxy resin composition for encapsulating a semiconductor device and semiconductor device encapsulated using the same | |
| US20100270664A1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same | |
| KR101526001B1 (en) | Epoxy resin composition for encapsulating semiconductor device, and semiconductor apparatus using the same | |
| KR101266542B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device package using the same | |
| KR101845147B1 (en) | Epoxy resin composition for encapsulating semicomductor device and semiconductor device encapsulated using the same | |
| KR101570558B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device package using the same | |
| KR101469265B1 (en) | Epoxy resin composition for encapsulating semiconductor device, and semiconductor apparatus using the same | |
| KR100250770B1 (en) | Low humid and good adhesive epoxy resin composition for the encapsulation of semiconductor | |
| KR101758448B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same | |
| JP2013234305A (en) | Epoxy resin composition for sealing semiconductor and semiconductor device | |
| KR20100072720A (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same | |
| KR100543092B1 (en) | Epoxy Molding Compound for Encapsulation of Semiconductor Devices | |
| KR100413357B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
| JP2009256475A (en) | Epoxy resin composition for sealing semiconductor and semiconductor device using the same | |
| KR101748024B1 (en) | Composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same | |
| KR20170079115A (en) | Epoxy Resin Composition for Sealing Semiconductor | |
| KR20160056500A (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same | |
| KR100673622B1 (en) | Epoxy molding compound having good flow-ability, low warpage, and long storage life for sealing electronic component | |
| KR101805991B1 (en) | Epoxy Resin Composition for Sealing Semiconductor | |
| KR101943698B1 (en) | Epoxy resin composition for encapsulating semicomductor device and semiconductor device encapsulated using the same | |
| KR100833567B1 (en) | Epoxy resin composition for encapsulating semiconductor device and the semiconductor device using the same | |
| KR101737179B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application | ||
| AMND | Amendment | ||
| X701 | Decision to grant (after re-examination) | ||
| FPAY | Annual fee payment |
Payment date: 20181025 Year of fee payment: 4 |