KR101748007B1 - Epoxy resin composition for encapsulating semicondouctor device and semiconductor device encapsulated by using the same - Google Patents
Epoxy resin composition for encapsulating semicondouctor device and semiconductor device encapsulated by using the same Download PDFInfo
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Abstract
The present invention relates to an epoxy resin for semiconductor device encapsulation, which comprises (A) an epoxy resin, (B) a cyanate ester resin represented by the following formula (3), (C) a phenolic curing agent, (D) a curing accelerator, and The epoxy resin composition for sealing a semiconductor device of the present invention is excellent in flame retardancy and adhesion, and is excellent in crack resistance and reliability.
(3)
In the above formula (3), R1 is as defined in the specification.
Description
TECHNICAL FIELD The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed by using the same.
In general, flame retardancy is required in the production of epoxy resin compositions for semiconductor device encapsulation, and most semiconductor companies require UL94 V-0 as a flame retardant. In order to secure such flame retardancy, epoxy resin compositions for sealing semiconductor devices are manufactured using halogen-based or inorganic flame retardants. Flame retardancy is secured by using brominated epoxy resin and antimony trioxide in epoxy resin composition for semiconductor device encapsulation.
However, in the case of epoxy resin compositions for semiconductor device encapsulation in which flame retardancy is secured by using such halogen-based flame retardants, not only toxic carcinogens such as dioxins and difuran are generated during incineration or fire, but also hydrogen bromide It is toxic to the human body due to an acidic gas such as hydrogen chloride (HCl) and has a problem of causing corrosion of a semiconductor chip, a wire, and a lead frame.
Non-halogenated organic flame retardants and inorganic flame retardants have been studied as countermeasures thereto. A novel flame retardant such as a phosphorus flame retardant such as phosphazene or phosphoric acid and a nitrogen element-containing resin such as phosphazene or phosphoric acid ester has been studied as an organic flame retardant, but the nitrogen element-containing resin has a problem of insufficient flame retardancy and excessive use. Organophosphorus flame retardant is excellent in flame retardancy and good in thermal properties, so there is no problem in applying it to an epoxy resin composition for encapsulating a semiconductor device. In the past, phosphorus and polyphosphoric acid did not occur in combination with moisture due to a problem of reliability lowering due to an inorganic phosphorus flame retardant However, it is regulated by semiconductor makers, resulting in restrictions on use.
In addition, new non-halogen based inorganic flame retardants such as magnesium hydroxide or zinc borate are being investigated. However, when the application amount of such an inorganic flame retardant is increased in order to secure the flame retardant property, problems such as lowering of the curability of the sealing epoxy resin composition, . Therefore, in order to minimize such problems, it is necessary that the epoxy resin and the curing agent constituting the sealing epoxy resin composition have basically a certain level of flame retardancy so that the application amount of the inorganic flame retardant can be minimized.
Apart from this, portable digital devices with small and thin designs have recently become popular, and thinner and thinner semiconductor packages have been made in order to increase the mounting efficiency per unit volume of the semiconductor packages mounted inside. A difference in thermal expansion coefficient between the semiconductor chip, the lead frame, and the epoxy resin composition constituting the package in accordance with the light and short shrinkage of the package, the thermal shrinkage of the epoxy resin composition sealing the package, and warpage of the package due to shrinkage . It is necessary to develop an epoxy resin composition for semiconductor device encapsulation which is excellent in anti-warp characteristics because defective soldering of the package in the post-semiconductor process may cause defective soldering and electrical failure.
As a typical method capable of improving the flexural characteristics of the epoxy resin composition, a method of raising the glass transition temperature of the epoxy resin composition and a method of lowering the curing shrinkage ratio of the epoxy resin composition are known.
In the process of mounting the semiconductor package on the substrate, the package is exposed at a high temperature (260 DEG C). At this time, due to the rapid volume expansion of moisture in the package, peeling in the package or cracking of the package may occur. Therefore, to prevent this, lowering the moisture absorption rate of the epoxy resin composition for sealing itself is a basic requirement for ensuring reliability. However, when the glass transition temperature of the epoxy resin composition is increased to improve the bending property, the moisture absorption rate of the composition necessarily becomes high, which inevitably lowers the reliability of the package. Therefore, in the case of a package having poor reliability, it is required to increase the glass transition temperature in order to improve the bending property.
In order to lower the hardening shrinkage ratio of the epoxy resin composition, there is a method of increasing the content of the inorganic filler having a low coefficient of thermal expansion. However, when the content of the inorganic filler is increased, since the flowability of the epoxy resin composition is lowered, the increase of the content of the inorganic filler is necessarily restricted.
Therefore, there is a need to develop an epoxy resin composition for sealing a semiconductor device that has good warpage characteristics, good reliability and fluidity, and can secure excellent flame retardancy without using a flame retardant.
A problem to be solved by the present invention is to provide an epoxy resin composition for semiconductor device encapsulation excellent in flame retardancy.
Another object to be solved by the present invention is to provide an epoxy resin composition for sealing semiconductor devices having excellent adhesion.
Another object of the present invention is to provide an epoxy resin composition for semiconductor device encapsulation excellent in crack resistance and reliability.
One aspect of the present invention is to provide a semiconductor device comprising (A) an epoxy resin, (B) a cyanate ester resin represented by the following formula (3), (C) a phenol-based curing agent, (D) To an epoxy resin composition for sealing a device;
(3)
In the above formula (3), R 1 is each independently hydrogen or a methyl group, and n is 1 to 50.
The cyanate ester resin (B) may be contained in an amount of 0.2 to 3% by weight based on the total amount of the epoxy resin composition.
The epoxy resin composition comprises 3 to 15% by weight of an epoxy resin (A); 0.2 to 3% by weight of a cyanic acid ester resin (B); 2 to 10% by weight of a phenolic curing agent (C); 0.01 to 1% by weight of a curing accelerator (D); And 82 to 90% by weight of an inorganic filler (E).
The phenolic curing agent may be contained at a weight ratio of 1: 0.1 to 1: 0.3 with the cyanic acid ester resin represented by the formula (3).
The epoxy resin may include at least one of a biphenyl type epoxy resin represented by the following formula (1) and a phenol aralkyl type epoxy resin represented by the following formula (2)
[Chemical Formula 1]
In Formula 1, R is independently an alkyl group having 1 to 4 carbon atoms, and an average value of n is 0 to 7.
(2)
In Formula 2, the average value of n is 1 to 7.
Wherein the phenolic curing agent is selected from the group consisting of a phenol aralkyl type phenol resin, a xylock type phenol resin, a phenol novolac type phenol resin, a cresol novolak type phenol resin, a naphthol type phenol resin, a terpene type phenol resin, Dicyclopentadiene-based phenol resin, terpene-modified phenol resin, dicyclopentadiene-modified phenol resin, novolak-type phenol resin synthesized from bisphenol A and resole, tris (hydroxyphenyl) methane and dihydroxybiphenyl A polyhydric phenol compound, and a polyhydric phenol compound.
The equivalent amount of the phenolic hydroxyl group contained in the phenolic curing agent may be 90 to 300 g / eq.
The curing accelerator may include a tertiary amine, an organometallic compound, an organic phosphorus compound, an imidazole compound, or a boron compound.
The inorganic filler may include at least one member selected from the group consisting of fusible silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, have.
The inorganic filler may be spherical fused silica having an average particle diameter of 0.001 to 30 mu m.
Another aspect of the present invention relates to a semiconductor element sealed with the epoxy resin composition for sealing a semiconductor element.
INDUSTRIAL APPLICABILITY The epoxy resin composition for semiconductor device encapsulation of the present invention has excellent flame retardancy and adhesion, and is excellent in crack resistance and reliability.
The epoxy resin composition for encapsulating a semiconductor device according to the present invention comprises an epoxy resin (A), a cyanate ester resin (B), a phenolic phenolic curing agent (C), a curing accelerator (D) and an inorganic filler (E). Hereinafter, the present invention will be described in detail.
(A) an epoxy resin
The epoxy resin is not particularly limited as long as it is an epoxy resin generally used for sealing semiconductor devices. In an embodiment, the epoxy resin may be an epoxy compound containing two or more epoxy groups in the molecule.
For example, the epoxy resin is an epoxy resin obtained by epoxidizing a condensate of phenol or alkyl phenol and hydroxybenzaldehyde, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a biphenyl type epoxy resin, a phenol aralkyl type epoxy Novolak type epoxy resins, naphthol novolak type epoxy resins, novolak type epoxy resins of bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl type epoxy Resin, dicyclopentadiene epoxy resin, and the like.
Preferably, the epoxy resin may include at least one of an orthocresol novolak type epoxy resin, a biphenyl type epoxy resin, and a phenol aralkyl type epoxy resin.
For example, a biphenyl type epoxy resin represented by the following formula (1) can be used:
[Chemical Formula 1]
In Formula 1, R is independently an alkyl group having 1 to 4 carbon atoms, and an average value of n is 0 to 7.
In another embodiment, R in the above formula (1) may preferably be a methyl group or an ethyl group, more preferably a methyl group. For example, a phenol aralkyl type epoxy resin represented by the following formula (2) can be used:
(2)
In Formula 2, the average value of n is 1 to 7.
The phenol aralkyl type epoxy resin of formula (2) is based on a phenol skeleton and forms a structure having a biphenyl in the middle thereof. Thus, it has excellent hygroscopicity, toughness, oxidation resistance and crack resistance, and has low crosslinking density. It has an advantage that a certain level of flame retardancy can be secured by itself while forming a carbon layer (char).
These epoxy resins may be used alone or in combination of two or more.
The epoxy resin may be used alone or as an additive compound prepared by a linear reaction such as a phenol-based curing agent, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent and a melt master batch have. In order to improve moisture resistance, it may be preferable to use a resin having a low chloride ion, sodium ion, and other ionic impurities contained in the epoxy resin.
The epoxy resin may be contained in an amount of 2 to 19% by weight, preferably 3 to 17% by weight, and more preferably 3 to 15% by weight in the epoxy resin composition for sealing a semiconductor device. Within the above range, the flowability, flame retardancy, and reliability of the epoxy resin composition may be good.
(B) a cyanic acid ester resin
The cyanate ester resin of the present invention is a naphthol aralkyl type cyanate ester resin represented by the following formula (3)
(3)
In the above formula (3), R 1 is each independently hydrogen or a methyl group, and n is 1 to 50.
The cyanic acid ester resin forms a triazine structure at a high temperature, and can provide sufficient flame retardancy and heat resistance without additional additives, and can further improve adhesion when used together with a phenolic curing agent to be described later.
The cyanate ester resin may be contained in an amount of 0.2 to 3% by weight based on the whole epoxy resin composition. When it is included in the above-mentioned range, the adhesive property is sufficiently expressed and the reliability is excellent, and sufficient flame retardancy can be ensured without additives. When the cyanate ester resin is contained in an amount exceeding 3% by weight, the flow characteristics may be deteriorated and the productivity may be deteriorated due to limitations in the production process.
(C) a phenol-based curing agent
The phenol-based curing agent is not particularly limited as long as it has one or more, preferably two or more, phenolic hydroxyl groups or the like, which is conventionally used for sealing semiconductor devices, and includes at least one kind selected from the group consisting of monomers, oligomers and polymers Can be used.
For example, the phenolic curing agent is selected from the group consisting of a phenol aralkyl type phenol resin, a xylock type phenol resin, a phenol novolac type phenol resin, a cresol novolak type phenol resin, a naphthol type phenol resin, a terpene type phenol resin, Dicyclopentadiene-based phenol resin, terpene-modified phenol resin, dicyclopentadiene-modified phenol resin, novolak-type phenol resin synthesized from bisphenol A and resole, tris (hydroxyphenyl) methane and dihydroxybiphenyl And at least one curing agent selected from the group consisting of polyhydric phenol compounds.
Preferably, the phenolic hardener is a phenol aralkyl type phenol resin having a biphenyl skeleton represented by the following formula (4) or a xylock type phenol resin represented by the following formula (5).
[Chemical Formula 4]
In Formula 4, the average value of n is 1 to 7.
[Chemical Formula 5]
The average value of n in the formula (5) is 1 to 7.
The phenolic curing agent may be used alone or in combination. For example, it can be used in the form of an additive compound prepared by subjecting a phenolic curing agent to a linear reaction such as the epoxy resin, curing accelerator, and other additives such as a melt master batch.
The phenolic curing agent may have a softening point of 50 to 100 캜. Since the appropriate resin viscosity can be secured within the above range, the fluidity may not be deteriorated.
The equivalent amount of the phenolic hydroxyl group contained in the phenolic curing agent may be 90 to 300 g / eq.
The composition ratio of the epoxy resin and the phenolic curing agent may be such that the equivalent ratio of the epoxy group of the epoxy resin to the equivalent of the phenolic hydroxyl group contained in the phenolic curing agent is 0.5: 1 to 2: 1. Within the above range, the fluidity of the resin composition can be ensured and the curing time may not be delayed. Preferably, the equivalence ratio may be from 0.8: 1 to 1.6: 1.
The phenol-based curing agent may be contained in an amount of 2 to 12 wt% of the entire epoxy resin composition. The unreacted epoxy groups and phenolic hydroxyl groups are not generated in a large amount within the above range, and thus the reliability is good. Preferably 2 to 10% by weight of the epoxy resin composition.
The phenolic curing agent may be contained in a weight ratio of 1: 0.1 to 1: 0.3 with the cyanate ester resin represented by the formula (3). It is advantageous in that the reliability is improved by the improvement of adhesion in the weight ratio range, and at the same time, a triazine structure is formed at a high temperature, and sufficient flame retardancy can be ensured even without a separate additive.
(D) Curing accelerator
The curing accelerator promotes the reaction between the epoxy resin and the phenolic curing agent. As the curing accelerator, a tertiary amine, an organometallic compound, an organic phosphorus compound, an imidazole-based compound, a boron compound, or the like can be used, but the present invention is not limited thereto. Organic phosphorus compounds may preferably be used.
Specific examples of the tertiary amine include benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris Diaminomethyl) phenol and tri-2-ethylhexyl acid, and the like. The organometallic compounds include, but are not limited to, chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. The organophosphorus compound is preferably selected from the group consisting of tris-4-methoxyphosphine, tetrabutylphosphonium bromide, butyltriphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, tri Phenylphosphine-1,4-benzoquinone adduct, and the like. The imidazole-based compound may be at least one selected from the group consisting of 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, Heptadecyl imidazole, and the like. The boron compound may be at least one selected from the group consisting of tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine , Tetrafluoroborane amine, and the like, but are not limited thereto. In addition, 1,5-diazabicyclo [4.3.0] non-5-ene, 1,8-diazabicyclo [5.4.0] undec-7-ene and phenol novolac resin salts can be used .
The curing accelerator may be used in the form of an additive compound prepared by pre-reacting with an epoxy resin and / or a phenolic curing agent.
The curing accelerator may be contained in an amount of 0.001 to 1.5% by weight based on the whole epoxy resin composition. Within this range, the curing reaction time is not delayed and the fluidity of the composition can be ensured. Preferably 0.01 to 1% by weight.
(E) Inorganic filler
Inorganic fillers are used to improve mechanical properties and lower stress in epoxy resin compositions. Examples of the inorganic filler include, but are not limited to, fumed silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide and glass fiber. These may be used alone or in combination of two or more.
Preferably, fused silica having a low linear expansion coefficient is used for low stress. The fused silica refers to amorphous silica having a specific gravity of 2.3 or less, and may include amorphous silica obtained by melting crystalline silica or synthesized from various raw materials.
The shape and particle diameter of the inorganic filler are not particularly limited, but those having an average particle diameter of 0.001 to 30 탆 can be used. Preferably, spherical fused silica having an average particle diameter of 0.001 to 30 mu m can be used. The inorganic filler may be a mixture of spherical fused silica having different particle diameters. For example, 50 to 99% by weight of spherical fused silica having an average particle diameter of 5 to 30 μm and 1 to 50% by weight of spherical fused silica having an average particle diameter of 0.001 to 1 μm can be mixed and used. The maximum particle diameter can be adjusted to 45 탆, 55 탆 or 75 탆 according to the application.
The inorganic filler may be used after surface treatment with at least one coupling agent selected from the group consisting of epoxy silane, aminosilane, mercaptosilane, alkylsilane, and alkoxysilane.
The inorganic filler may be contained in an appropriate ratio depending on physical properties such as moldability, low stress, and high temperature strength of the epoxy resin composition. For example, the inorganic filler may be contained in an amount of 60 to 92% by weight of the entire epoxy resin composition. Within this range, it has excellent bending properties and reliability of the package, and is excellent in fluidity and moldability. Preferably from 82 to 90% by weight of the epoxy resin composition.
additive
The epoxy resin composition according to the present invention may further contain additives such as a colorant, a coupling agent, a release agent, a stress relieving agent, a crosslinking promoter, a leveling agent, and a flame retardant as additives in addition to the above components.
As the coloring agent, carbon black or an organic or inorganic dye can be used, but it is not limited thereto.
As the coupling agent, a silane coupling agent may be used. As the silane coupling agent, at least one selected from the group consisting of an epoxy silane, an aminosilane, a mercaptosilane, an alkylsilane, and an alkoxysilane can be used but is not limited thereto.
As the release agent, at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid, and natural fatty acid metal salt may be used.
The stress relieving agent may be at least one selected from the group consisting of modified silicone oil, silicone elastomer, silicone powder, and silicone resin, but is not limited thereto.
The additive may be contained in an amount of 0.1 to 5.5% by weight in the epoxy resin composition.
The epoxy resin composition may further comprise a flame retardant. Non-halogen organic or inorganic flame retardants may be used as the flame retardant. Examples of the non-halogenated organic or inorganic flame retardant include, but are not limited to, flame retardants such as phosphazene, zinc borate, aluminum hydroxide and magnesium hydroxide.
The flame retardant may vary depending on the content of the inorganic filler and the type of the phenol-based curing agent, so that the flame retardant may be contained in an appropriate ratio depending on the flame retardancy of the epoxy resin composition. The content of the flame retardant may be 10 wt% or less, preferably 8 wt% or less, more preferably 5 wt% or less in the epoxy resin composition.
The epoxy resin composition of the present invention has a high glass transition temperature and low curing shrinkage ratio, and thus has excellent package warpage characteristics. The epoxy resin composition of the present invention has excellent adhesion and resistance to moisture absorption against other various materials constituting the semiconductor package and uses halogen- It is possible to secure excellent flame retardancy.
The method for producing the epoxy resin composition of the present invention described above is not particularly limited. For example, the respective components contained in the composition are homogeneously mixed using a Henschel mixer or a Lodige mixer, melt-kneaded at 90 to 120 ° C in a roll mill or kneader, and then cooled and pulverized . A method of sealing a semiconductor element using the epoxy resin composition is most commonly used for a low pressure transfer molding method. However, it can also be formed by a method such as a compression molding method, an injection molding method, or a casting molding method. A method of manufacturing a semiconductor device comprising a lead frame, an iron lead frame, or a lead frame pre-plated with one or more materials selected from the group consisting of nickel, copper, and palladium on the lead frame, Can be produced.
The present invention can provide a sealed semiconductor device using the above-described epoxy resin composition.
Here, the sealing process is not particularly limited, and a molding machine is appropriately selected in accordance with a molding method, a semiconductor device is sealed with an epoxy resin composition and then cured by using a molding machine, and after the molded semiconductor device package is completed, A semiconductor device can be provided. The sealing molding temperature and time are preferably from 160 to 190 DEG C for 40 to 300 seconds, and the post curing temperature and time are preferably from 160 to 190 DEG C for from 0 to 8 hours.
Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.
The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.
Production Example - Synthesis of naphthol aralkyl type cyanate ester resin
236 g of naphthol aralkylphenol resin (0.47 mol of SN495V OH) was added to a four-necked flask equipped with a stirrer, a temperature controller, a nitrogen gas injector and a condenser, and dissolved in 500 g of chloroform. 0.7 mol of triethylamine was added thereto and 300 g of 0.93 mol of cyanogen chloride dissolved in chloroform was added dropwise at -10 캜 for 90 minutes. The mixture was stirred for 30 minutes, 0.1 mol of triethylamine and 30 g of chloroform were further added thereto, and the mixture was further stirred for 30 minutes to complete the reaction. Triethylamine hydrochloride obtained after stirring was collected by filtration, and the filtrate was washed with 500 ml of 0.1 M hydrochloric acid, washed 4 times in 500 ml of water, and dried over sodium sulfate. The dried product was evaporated at 75 DEG C and the alpha -naphthol cyanic acid ester resin represented by the formula (3) was degassed at 90 deg. C under reduced pressure. The thus obtained resin was analyzed by infrared absorption spectrum to confirm the cyanate ester group at 2264 cm -1.
Example
The specifications of the components used in the following examples and comparative examples are as follows.
(A) an epoxy resin
(a1) phenol aralkyl type epoxy resin (NC-3000, manufactured by Nippon Kayaku Co., Ltd.) was used.
(a2) Orthocresol novolak type epoxy resin (EOCN-1020-55, manufactured by Nippon Kayaku Co., Ltd.) was used.
(B) a cyanic acid ester resin
A naphthol aralkyl type cyanate ester resin was synthesized and used according to the above Preparation Example.
(C) a phenol-based curing agent
A helix type phenolic resin HE100C-10 (Air Water) was used.
(D) Curing accelerator
Triphenylphosphine TPP (Hokko) was used.
(E) Inorganic filler
Spherical fused silica having an average particle diameter of 18 탆 and spherical fused silica having an average particle diameter of 0.5 탆 were mixed at a weight ratio of 9: 1.
(F) Coupling agent
(f1) was mixed with KBP-803 (Shinetsu), which is a mercaptopropyltrimethoxysilane, and SZ-6070 (Dow Corning chemical), which is methyltrimethoxysilane.
(G) Additive
(g1) Carnauba wax as a release agent and (g2) Carbon black MA-600 (Matsusita Chemical Co.) as a colorant.
(H) Flame retardant
Antimony trioxide (Sigma-Aldrich) was used as a flame retardant.
Examples 1-4 and Comparative Examples 1-4
The mixture was uniformly mixed using a Henschel mixer (KEUM SUNG MACHINERY CO. LTD. (KSM-22)) according to the composition shown in Table 1, and then melt kneaded at 90 to 110 캜 using a continuous kneader, To prepare an epoxy resin composition for element sealing. Table 1 shows the results of measurement of physical properties based on the following evaluation methods of physical properties.
Property evaluation method
(1) Spiral flow
The mold was manufactured based on the EMMI standard, and the flow length (inch) was evaluated at a molding temperature of 175 占 폚 and a molding pressure of 70 kgf / cm2.
(2) Glass transition temperature (Tg) and thermal expansion coefficient
And a TMA (Thermal Mechanical Analyzer) at a heating rate of 10 캜 / min.
(3) Adhesion
The epoxy resin composition shown in Table 1 was molded into Alloy 42 metal specimens to be measured under conditions of a mold temperature of 170 to 180 DEG C, a conveying pressure of 1000 psi, a conveying speed of 0.5 to 1.0 cm / sec, and a curing time of 120 seconds to obtain a cured specimen. Was placed in an oven at 170 to 180 DEG C for 4 hours and then left for 168 hours at 85 DEG C / 85% relative humidity. Thereafter, the IR reflow was passed once for 30 seconds at 260 DEG C for 3 times The adhesive force under repeated conditioning conditions was measured. In this case, the area of the epoxy resin composition contacting the metal specimen is 33 to 40 mm 2, and the adhesive force is measured using UTM (Universal Testing Machine) for 10 or more specimens per each measuring step.
(4) Flammability
The UL94 vertical test was carried out with a specimen thickness of 1/16 inch. After the flame was contacted with the specimen for 10 seconds, when the flame was turned off, the flame was contacted again for 10 seconds.
(5) Evaluation of crack resistance: Reliability evaluation
The semiconductor package was assembled with the composition prepared in the above Examples and Comparative Examples and then post-cured at 175 ° C for 4 hours. These semiconductor devices were dried at 125 캜 for 24 hours, then allowed to stand at 85 캜 / 85% relative humidity for 168 hours, and passed through IR reflow once at 260 캜 for 30 seconds. The presence or absence of cracks was evaluated using Scanning Acoustical Microscopy (C-SAM), a non-destructive testing machine.
3
Suzy
(alloy 42)
168 hours
After leaving
(UL V-0 1.6mm)
(C-SAM)
As can be seen from the results shown in Table 1, the epoxy resin composition for sealing a semiconductor device of Example 1-4 had excellent adhesion, flame retardancy and crack resistance.
On the other hand, Comparative Example 1 in which a cyanic acid ester resin was not used, Comparative Example 2 in which a trace amount of a cyanic acid ester resin was used, and Comparative Example 3 in which an excess amount of a cyanic acid ester resin was used had adhesion, flame retardance, Is decreased. In Comparative Example 4 in which cyanic acid ester resin was not used and antimony trioxide was used as a flame retardant, flame retardancy was secured, but adhesiveness and crack resistance were remarkably decreased.
While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are in all respects illustrative and not restrictive.
Claims (11)
(B) 0.2 to 3% by weight of a cyanate ester resin represented by the following general formula (3)
(C) 2 to 10% by weight of a phenolic curing agent,
(D) 0.01 to 1% by weight of a curing accelerator, and
(E) 82 to 90% by weight of an inorganic filler.
(3)
(In the above formula (3), R 1 is each independently hydrogen or a methyl group, and n is 1 to 50).
Wherein the phenolic curing agent (C) is contained in a weight ratio of 1: 0.1 to 1: 0.3 with the cyanate ester resin represented by the above formula (3).
Wherein the epoxy resin (A) comprises at least one of a biphenyl type epoxy resin represented by the following formula (1) and a phenol aralkyl type epoxy resin represented by the following formula (2)
[Chemical Formula 1]
In Formula 1, R is independently an alkyl group having 1 to 4 carbon atoms, and an average value of n is 0 to 7,
(2)
In Formula 2, the average value of n is 1 to 7.
The phenolic curing agent (C) may be at least one selected from the group consisting of a phenol aralkyl type phenol resin, a xylock type phenol resin, a phenol novolac type phenol resin, a cresol novolak type phenol resin, a naphthol type phenol resin, a terpene type phenol resin, Phenol resin, dicyclopentadiene-based phenol resin, terpene-modified phenol resin, dicyclopentadiene-modified phenol resin, novolak-type phenol resin synthesized from bisphenol A and resole, tris (hydroxyphenyl) methane and dihydroxybiphenyl And at least one curing agent selected from the group consisting of an epoxy resin, an epoxy resin, and an epoxy resin.
Wherein an equivalent weight of the phenolic hydroxyl group contained in the phenolic curing agent (C) is 90 to 300 g / eq.
Wherein the curing accelerator (D) comprises a tertiary amine, an organometallic compound, an organic phosphorus compound, an imidazole-based compound, or a boron compound.
Wherein the inorganic filler (E) is at least one selected from the group consisting of fusible silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, The epoxy resin composition for sealing a semiconductor device according to claim 1,
Wherein the inorganic filler (E) is spherical fused silica having an average particle diameter of 0.001 to 30 占 퐉.
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| KR102283055B1 (en) * | 2019-11-13 | 2021-07-28 | 주식회사 테라온 | Epoxy composites and semiconductor package comprising the same |
| KR102403966B1 (en) * | 2020-07-13 | 2022-05-31 | 주식회사 테라온 | Igbt power semiconductor package with excellent coooling performance and manufacturing method thereof |
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| JP2013006954A (en) * | 2011-06-24 | 2013-01-10 | Dic Corp | Cyanate resin and curable resin composition containing the same |
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| WO2012165240A1 (en) | 2011-05-27 | 2012-12-06 | 三菱瓦斯化学株式会社 | Resin composition, prepreg and laminate |
| JP2013006954A (en) * | 2011-06-24 | 2013-01-10 | Dic Corp | Cyanate resin and curable resin composition containing the same |
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