KR100882533B1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same - Google Patents

Abstract

An epoxy resin composition for encapsulating a semiconductor device is provided to increase adhesive force with a semiconductor chip and a lead frame and to improve cracking resistance and peeling resistance. An epoxy resin composition for encapsulating a semiconductor device comprises an epoxy resin, curing agent, curing accelerator, adhesive strength improver and inorganic filler. The curing agent is represented by amino triazine-based modified phenol novolac resin indicated as the chemical formula 1. The adhesive strength improver is methyl / phenylsilsesquioxane resin indicated as the chemical formula 2. In the chemical formula 1, the average of m is 0-15 and the average of m is 0-10. The order of two repeating units can be arranged in the chemical formula 1 randomly. In the chemical formula 2, n is 1-20 and R1-R16 are independently a methyl radical or phenyl radical.

Description

Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same}

The present invention relates to an epoxy resin composition for sealing semiconductor elements, and more particularly, to an epoxy resin composition for sealing semiconductor elements having excellent adhesion to various lead frames and excellent package reliability, and a semiconductor device sealed using the same. .

In general, for semiconductor sealing epoxy resin compositions, all semiconductor manufacturers require a flame retardant rating of UL-94 V-0. In order to secure the flame retardant grade, conventionally, halogenated epoxy resin was used as a main flame retardant, and antimony trioxide was used as a secondary flame retardant to secure flame retardancy. However, antimony trioxide is a carcinogenic substance, which is very harmful to the human body. Also, in the case of an epoxy resin composition for sealing a semiconductor using a halogen-based flame retardant, toxic carcinogens such as dioxin or difuran are generated during incineration or fire. In addition, the ozone layer is destroyed by gases such as HBr and HCl generated during combustion, which have a fatal effect on the environment. As a countermeasure, phosphorus-based flame retardants such as phosphazene and phosphoric acid esters and novel flame retardants such as nitrogen-containing resins have been considered.However, in the case of phosphorus-based flame retardants, phosphoric acid and polyphosphoric acid formed by bonding with moisture improve the reliability of semiconductors. There was a problem of dropping, and in the case of a nitrogen element-containing resin, there was a problem of insufficient flame retardancy.

In order to solve the problems caused by the use of new flame retardants, a flame retardant method using a self-extinguishing resin has been in the spotlight to satisfy the flame retardancy of UL94 V-0 required by semiconductor manufacturers without using any flame retardant. However, the self-extinguishing resin is very effective for improving the flame retardancy of the resin composition, but has a disadvantage in that adhesion to the copper lead frame is inferior to that of the conventional biphenyl resin. have. In order to improve adhesion with the copper lead frame, a method of adding a triazine-based modified phenol novolak resin has been attempted, but when the copper lead frame is oxidized in the air, it has a problem in that the adhesion force is sharply lowered. In fact, in the case of a semiconductor package using a copper lead frame, the oxidation of copper is inevitable because heat is applied from the outside during the semiconductor chip attach and the gold wire bonding.

SUMMARY OF THE INVENTION The present invention solves the problems of the prior art as described above, and improves adhesion to various members such as semiconductor chips and leadframes, and improves semiconductor element sealing in which cracking resistance and peeling resistance during substrate mounting are improved. It is an object to provide an epoxy resin composition for use and a semiconductor device using the same.

Therefore, according to the present invention, in an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, an adhesion improving agent, and an inorganic filler, an amino triazine-based modified phenol novolak resin represented by the following Chemical Formula 1 is used as the curing agent, The epoxy resin composition for semiconductor element sealing which uses the methyl / phenyl silsesquioxane resin represented by following formula (2) as said adhesive force improving agent is characterized.

Formula 1

(In the above formula, the average value of m is 0 to 15, and the average value of n is 0 to 10. 순서 The order of the two repeating units may be randomly arranged in Formula 1.)

Formula 2

(Wherein n is 1 to 20, and R ₁ to R ₁₆ are each independently a methyl group or a phenyl group.)

The amino triazine-based modified phenol novolak resin is used in an amount of from 1 to 30% by weight based on the total curing agent.

The methyl / phenyl silsesquioxane resin is used in an amount of 0.01 to 2 wt% based on the total epoxy resin composition.

The epoxy resin is characterized by comprising a phenol aralkyl type epoxy resin represented by the following formula (3) or a biphenyl type epoxy resin represented by the following formula (4).

[Formula 3]

(In the above formula, the average value of n is 1 to 7.)

Formula 4

(In the above formula, the average value of n is 0 -7.)

The curing agent is characterized in that it comprises a "phenol aralkyl type phenol resin represented by the following formula" 5 "or" xyllox "phenol resin represented by the following formula [6].

[Formula 5]

(In the above formula, the average value of n is 1 to 7.)

[Formula 6]

(In the above formula, the average value of n is 0 to 7).

The present invention also provides a semiconductor device in which the epoxy resin composition is mixed using a Henschel mixer or a solid mixer, melted and kneaded with a roll mill or a kneader, and then sealed with a final powder product obtained through cooling and grinding. do.

The final powder product is sealed by a low pressure transfer molding method, an injection molding method or a casting molding method.

The semiconductor device may include a lead frame selected from a copper lead frame, an iron lead frame, a lead frame pre-plated with a material containing nickel and palladium in the copper or iron lead frame, and an organic laminate frame.

The epoxy resin composition for semiconductor element sealing of the present invention is useful for producing a semiconductor device having high reliability by improving adhesion to various lead frames.

The present invention is an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, an adhesion enhancer, and an inorganic filler, using an amino triazine-based modified phenol novolak resin represented by the following general formula (1) as the curing agent, to improve the adhesion The present invention provides an epoxy resin composition for sealing a semiconductor device having a characteristic of using a methyl / phenyl silsesquioxane resin represented by the following Chemical Formula 2 and a semiconductor device using the same.

Formula 1

(In the above formula, the average value of m is 0 to 15, and the average value of n is 0 to 10. 순서 The order of the two repeating units may be randomly arranged in Formula 1.)

Formula 2

(Wherein n is 1 to 20, and R ₁ to R ₁₆ are each independently a methyl group or a phenyl group.)

The amino triazine-based modified phenol novolak resin is a curing agent for improving adhesion to the copper lead frame, and in terms of adhesion improvement effect, flowability and package formability of the resin composition during packaging, curing degree and moisture absorption rate of the resin composition after packaging It is preferably used at 1 to 30 wt%, more preferably at 2 to 20 wt%, and most preferably at 3 to 10 wt%, based on the total curing agent.

The methyl / phenyl silsesquioxane resin is an additive for preventing adhesion deterioration during oxidation of a copper lead frame, and has a refractive index of 1.4 to 1.6, specific gravity of 1 to 1.6, and room temperature of 200 to 40% butanol solution. Preference is given to using high purity methyl or phenyl silsesquioxane resins which are 800 cps. The methyl / phenyl silsesquioxane resin is preferably used in an amount of 0.01 to 2 wt% based on the total epoxy resin composition in terms of adhesion improving effect, dispersibility of additives and mechanical strength after packaging, and is preferably 0.02 to 1 wt%. More preferably used, most preferably 0.05 to 0.5% by weight.

The methyl / phenyl silsesquioxane resin may be added and used alone during preparation of the epoxy resin composition, and epoxy may be prepared through a method such as a melt master batch (MBM) before preparing the epoxy resin composition for uniform dispersion. The resin may be dissolved in advance or melted in a melt of a curing agent and then added to the composition to be used. Moreover, it can also be used after mixing with coupling agents, such as an epoxy silane, an amino silane, a mercapto silane, an alkyl silane, and an alkoxysilane.

The epoxy resin of the present invention is not particularly limited as long as it is an epoxy resin generally used for semiconductor sealing, and is preferably an epoxy compound containing two or more epoxy groups in a molecule. Such epoxy resins include epoxy resins obtained by epoxidizing condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, phenol aralkyl type epoxy resins, and biphenyls. ) Epoxy resin, polyfunctional epoxy resin, naphthol novolac epoxy resin, novolac epoxy resin of bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybi And phenyl epoxy resins and dicyclopentadiene epoxy resins. As a particularly preferable epoxy resin, the phenol aralkyl type epoxy resin of the novolak structure containing a biphenyl group derivative in the molecule | numerator shown by following formula (3), or the biphenyl type epoxy resin shown by following formula (4) is mentioned. These epoxy resins may be used alone or in combination, and other additives such as melt master batches and other additives such as hardeners, curing accelerators, reaction modifiers, mold release agents, coupling agents, and stress relaxers may also be used. have. In addition, it is preferable to use those having low chlorine ions, sodium ions, and other ionic impurities contained in such epoxy resins to improve the moisture resistance reliability. 2 to 15 weight% is preferable with respect to all the epoxy resin compositions, and, as for the usage-amount, 3 to 12 weight% is more preferable.

[Formula 3]

(In the above formula, the average value of n is 1 to 7.)

Formula 4

(In the above formula, the average value of n is 0 -7.)

The phenol aralkyl type 폭 epoxy resin of the formula (3) forms a structure having a biphenyl in the middle based on the phenol skeleton, and thus has excellent hygroscopicity, toughness, oxidative resistance, and crack resistance, and has a low crosslinking density. While forming a carbon layer (char), there is an advantage in that it can secure a certain level of flame retardancy in itself. The phenol aralkyl type epoxy resin is preferably used in 10 to 90% by weight based on the total epoxy resin. In addition, the biphenyl type epoxy resin of the general formula (4) is preferred in view of the fluidity and reliability strengthening of the resin composition.

The curing agent that can be used in combination with the amino triazine-based modified phenol novolak resin, which is the curing agent of the present invention, is generally used for sealing a semiconductor, and is not particularly limited as long as it has two or more reactors, and specifically, a phenol aralkyl type phenolic resin. Phenolic novolac phenolic resin, xylok type phenolic resin, cresol novolac type phenolic resin, naphthol type phenolic resin, terpene type phenolic resin, polyfunctional phenolic resin, dicyclopentadiene phenolic resin, bisphenol A Novolak-type phenolic resins synthesized from resol, trihydric phenol compounds including tris (hydroxyphenyl) methane, dihydroxybiphenyl, acid anhydrides containing maleic anhydride and phthalic anhydride, metaphenylenediamine, diaminodiphenyl Aromatic amines, such as methane and diamino diphenyl sulfone, are mentioned. Preferred curing agents for use in combination with the amino triazine-modified phenol novolak resins are represented by the following general formula 5, which are represented by phenol aralkyl type phenolic resins having a novolak structure containing a biphenyl derivative in the following formula A xylophone phenolic resin is mentioned. These curing agents may be used in combination, and may also be used as the addition compound made by performing a linear reaction such as a melt master batch with other components such as an epoxy resin, a curing accelerator, a reaction regulator, a mold release agent, a coupling agent, a stress release agent, and the like. 0.5 kPa-12 kPa weight% is preferable with respect to the total epoxy resin composition, and # 1-8 weight% is more preferable. The compounding ratio of the total epoxy resin and the total curing agent is preferably 0.5 to 2 kPa, and more preferably 0.8 to 1.6 kPa of the chemical equivalent ratio of the epoxy resin to the curing agent, depending on the mechanical properties and moisture resistance reliability of the package. .

[Formula 5]

(In the above formula, the average value of n is 1 to 7.)

[Formula 6]

(In the above formula, the average value of n is 0 to 7).

Phenol aralkyl type phenolic resin of Formula 5 is preferable because it forms a carbon layer when burning at high temperature to block the transfer of heat and oxygen around the flame retardancy. The phenol aralkyl type phenol resin is preferably used in 10 to 85% by weight based on the total curing agent. In addition, the xylox phenol resin of the formula (5) is preferred in view of the fluidity and reliability strengthening of the resin composition.

The curing accelerator used in the present invention is a substance that promotes the reaction between the epoxy resin and the curing agent. For example, tertiary amine, organometallic compound, organophosphorus compound, imidazole, boron compound and the like can be used. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diamino Salts of methyl) phenol and tri-2-ethylhexyl acid, and the like. Organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, butyltriphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenyl Phosphine-1, 4- benzoquinone ethylene adduct. The imidazoles include 2-methylimidazole, # 2-phenylimidazole, # 2-aminoimidazole, 2methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, and 2-heptadecyl. Midazoles. Boron compounds include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroboranetriethylamine And tetrafluoroboraneamine. In addition, 1,5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN), 1, 8- diazabicyclo [5.4. 0] undec-7-ene (1,8-diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolac resin salts may be used. As a particularly preferable hardening accelerator, organophosphorus compound, an amine type, or imidazole series hardening accelerator can be used individually or in mixture. The curing accelerator may also use an adduct made by prereacting with an epoxy resin or a hardening agent. As for the compounding quantity of the hardening accelerator used by this invention, it is preferable that it is [0.001%-~ 1.5% weight%] with respect to the whole # epoxy resin composition, and 0.01-# 1% weight% is more preferable.

The inorganic filler used in the present invention is a material used for improving the mechanical properties and low stress of the epoxy resin composition. Examples generally used include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fibers and the like. In order to reduce the stress, it is preferable to use molten silica having a low linear window coefficient. The molten silica refers to amorphous silica having a specific gravity of 2.3 Pa or less, and includes amorphous silica made by melting crystalline silica or synthesized from various raw materials. Although the shape and particle diameter of a molten silica are not specifically limited, The molten silica containing 50 micrometers-99 mass% of spherical molten silica of an average particle diameter of 5 micrometers-30 micrometers, and 1 micrometer-the 50 weight% of spherical molten silica of an average particle diameter of 0.001-1 micrometer The mixture should preferably comprise 40% to 100% by weight of the total filler. In addition, the maximum particle diameter can be adjusted to 45 μm, 55 μm or 75 μm according to the application. In fused spherical silica, conductive carbon may be contained as a foreign material on the silica surface, but it is also important to select a material with little foreign matter mixed. In the present invention, the ratio of the inorganic filler varies depending on the required physical properties such as formability, low stress, high temperature strength, etc., but it is preferably used at 70 to 95 wt% based on the total epoxy resin composition, and the ratio is 82 to 92 wt%. It is more preferable to use.

In addition, the epoxy resin composition of the present invention is a release agent such as higher fatty acids, higher fatty acid metal salts, natural fatty acids, paraffin waxes, ethylene waxes, ester waxes, carbon blacks, organic dyes, and inorganics within the scope of not impairing the object of the present invention. Colorants such as dyes, epoxysilanes, aminosilanes, mercaptosilanes, alkylsilanes, alkoxysilanes and other coupling agents, and stress relief agents such as modified silicone oils, silicone powders and silicone resins may be contained as necessary. At this time, the modified silicone oil is preferably a silicone polymer having excellent heat resistance, and a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, a silicone oil having a carboxyl functional group, or the like, or a mixture of two or more kinds thereof, to the whole epoxy resin composition. It can be used at 0.01 to 2% by weight. Moreover, oil and inorganic flame retardants, such as phosphazene, zinc borate, aluminum hydroxide, and magnesium hydroxide, can be contained as needed.

As a general method for producing an epoxy resin composition using the raw materials described above, a predetermined amount is uniformly mixed by using a Henschel® mixer or a solid mixer, melted and kneaded with a roll mill or kneader, and then cooled and pulverized. The process of obtaining the final powder product is used. As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method is most commonly used, and molding can also be carried out by a method such as injection molding or casting. By the above method, a semiconductor device of a copper lead frame or an iron lead frame or a lead frame pre-plated with a material containing nickel and palladium on the lead frame or an organic laminate frame can be manufactured.

Next, although an Example demonstrates this invention further in detail, this invention is not limited by an Example.

[Examples 1 to 3 and Comparative Examples 1 to 3]

Next, after mixing uniformly using a Henschel mixer according to the composition of Table 1, using a twin screw kneader (Twin screw kneader) to melt and kneading in the range of 100 ℃ ~ 120 ℃ ℃, the epoxy resin composition for semiconductor sealing Prepared. Various physical properties were evaluated by the following method. The evaluation results are shown in Table 2.

(Adhesion force): The copper metal element to be measured was prepared in the standard according to the measurement measurement mold, and the copper metal test piece which was not heat-treated separately and the test piece which oxidized the copper surface by leaving it at 125 degreeC for 2 hours were prepared, respectively. The epoxy resin composition of Table 1 was prepared on the metal test specimens prepared in this manner under conditions of a mold temperature of 170 to 180 ° C., a feed pressure of 1000 psi, a feed rate of 0.5 to 1 cm / sec, and a curing time of 120 seconds to obtain a cured specimen. Immediately after post-cure (PMC) for 4 hours in an oven at < RTI ID = 0.0 > C < / RTI > and left for 120 hours under 60 ° C and 60% relative humidity conditions, IR reflow was performed at 260 ° C for 30 seconds. The adhesion force under the preconditioning condition which repeated three times and repeated three times was measured, respectively. At this time, the area of the epoxy resin composition in contact with the metal specimen is 40 ± 1mm ² and the adhesion was measured using a universal testing machine (UTM) for 12 specimens for each measurement process and then calculated the average value.

(Reliability): Using a multi-plunger system (MPS) molding machine using the epoxy resin composition shown in Table 1, molding was carried out by transfer molding at 175 ° C for 60 seconds, and left for 2 hours at 125 ° C with a copper metal element lead frame which was not heat treated separately. A 256-LQFP (Low-profile Quad Flat Package) (28mm × 28mm × 1.4mm) package, each containing a copper metal element leadframe, whose surface was oxidized was fabricated. After curing at 175 ℃ for 4 hours and then cooled to room temperature. After drying the package at 125 ° C. for 24 hours, a thermal shock test was performed for 5 cycles (one cycle means 10 minutes at −65 ° C., 5 minutes at 25 ° C., and 10 minutes at 150 ° C.). It was. After the package was left for 60 hours at 60 ° C. and 60% relative humidity condition, the package was not cracked after the preconditioning condition of repeating the IR reflow three times for 30 seconds at 260 ° C. Observation was carried out with an optical microscope. Subsequently, the presence of delamination between the epoxy resin composition and the lead frame was evaluated using a non-destructive tester, C-SAM (Scanning Acoustical Microscopy).

Ingredient Comparative Example 1 Comparative Example 2 Comparative Example 3 Example 1 Example 2 Example 3 Epoxy resin Phenolic Aralkyl Epoxy Resin ^{Note 1)} 5.48 5.52 5.44 5.48 5.51 5.43 Biphenyl Epoxy Resin ^{Note 2)} 1.37 1.38 1.35 1.37 1.38 1.36 Hardener Amino Triazine Modified Phenolic Novolak Resin ^{Note 3)} - 0.26 - 0.24 0.46 0.24 Phenolic Aralkyl Type Phenolic Resin ^{Note 4)} 2.58 2.55 2.56 2.41 2.28 2.39 Xylox Phenolic Resin ^{Note 5)} 2.58 2.30 2.56 2.41 2.28 2.39 Curing accelerator Triphenylphosphine ^{Note 6)} 0.14 0.14 0.14 0.14 0.14 0.14 Inorganic filler Silica ^{Note 7)} 87 87 87 87 87 87 Coupling agent Murray captopril trimethoxysilane ^{Note 8)} 0.2 0.2 0.2 0.2 0.2 0.2 Methyltrimethoxysilane ^{Note 9)} 0.2 0.2 0.2 0.2 0.2 0.2 additive Methyl / phenyl silsesquioxane resin ^{week 10)} - - 0.1 0.1 0.1 0.2 coloring agent Carbon black 0.25 0.25 0.25 0.25 0.25 0.25 Wax Carnauba Wax 0.20 0.20 0.20 0.20 0.20 0.20

(Unit: weight%)

(week)

1) NC-3000, Nippon kayaku

2) YX-4000H, Japan Epoxy Resin

3) KA-7052L2, DIC

4) MEH-7851SS, Meiwa kasei

5) MEH-7800SS, Meiwa kasei

6) TPP, Hokko chemical

7) 9: 1 mixture of spherical molten silica with an average particle diameter of 18 µm and spherical molten silica with an average particle diameter of 0.5 µm

8) KBM-803, Shin Etsu silicon

9) SZ-6070, Dow Corning chemical

10) GR-630S (viscosity: 550cps, specific gravity: 1.16, refractive index: 1.42), Techneglas

Evaluation item Comparative Example 1 Comparative Example 2 Comparative Example 3 Example 1 Example 2 Example 3 Adhesion force (kgf) Unannealed Copper Leadframe After PMC 54 85 52 85 88 86 After 60 ℃ / 60RH% 120 hours left and after reflow 38 74 27 78 75 74 Oxidized Copper Leadframe After PMC 20 24 34 80 82 81 After 60 ℃ / 60RH% 120 hours left and after reflow 15 18 27 72 70 76 Reliability LQFP (Unheated Copper Leadframe) Number of appearance cracks 5 0 0 0 0 0 Peeling occurrence number 14 0 9 0 0 0 Total Number of Semiconductor Devices Tested 60 60 60 60 60 60 LQFP (oxidized copper leadframe) Number of appearance cracks 15 0 0 0 0 0 Peeling occurrence number 53 28 18 0 0 0 Total Number of Semiconductor Devices Tested 60 60 60 60 60 60

From the above results, it was confirmed that the epoxy resin composition according to the present invention was excellent in adhesion to the oxidized copper lead frame, and thus a semiconductor device having high reliability in sealing a semiconductor device could be manufactured.

Claims (8)

In an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, an adhesion enhancer, and an inorganic filler, an amino triazine-based modified phenol novolak resin represented by the following Formula 1 is used as the curing agent, and the adhesion improving agent is Epoxy resin composition for semiconductor element sealing characterized by using the methyl / phenyl silsesquioxane resin represented by 2. Formula 1

(In the above formula, the average value of m is 0 to 15, and the average value of n is 0 to 10. 순서 The order of the two repeating units may be randomly arranged in Formula 1.) Formula 2

(Wherein n is 1 to 20, and R ₁ to R ₁₆ are each independently a methyl group or a phenyl group.) The epoxy resin composition for sealing a semiconductor element according to claim 1, wherein the amino triazine-based modified phenol novolak resin is used in an amount of from 1 to 30 wt% based on the total curing agent. The epoxy resin composition for semiconductor element sealing according to claim 1, wherein the methyl / phenyl silsesquioxane resin is used at 0.01 to 2 wt% based on the total epoxy resin composition. The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the epoxy resin comprises a phenol aralkyl type epoxy resin represented by the following formula (3) or a biphenyl type epoxy resin represented by the following formula (4). [Formula 3]

(In the above formula, the average value of n is 1 to 7.) Formula 4

(In the above formula, the average value of n is 0 -7.) The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the curing agent comprises a phenol arylalkyl phenol resin represented by the following general formula (5) or a xyllox phenol resin represented by the following general formula (6). [Formula 5]

(In the above formula, the average value of n is 1 to 7.) [Formula 6]

(In the above formula, the average value of n is 0 to 7). The epoxy resin composition for sealing a semiconductor device according to any one of claims 1 to 5 is mixed using a Henschel mixer or a solid mixer, melted and kneaded with a roll mill or a kneader, and then cooled and pulverized. Semiconductor element sealed with the obtained final powder product. The semiconductor device according to claim 6, wherein the final powder product is sealed by a low pressure transfer molding method, an injection molding method, or a casting molding method. 8. The semiconductor device of claim 7, wherein the semiconductor device comprises a lead frame selected from a copper lead frame, an iron lead frame, a lead frame pre-plated with a material containing nickel and palladium in the copper or iron lead frame, and an organic laminate frame. A semiconductor device characterized in that.