KR100538655B1 - 감광성 수지 조성물 - Google Patents
감광성 수지 조성물 Download PDFInfo
- Publication number
- KR100538655B1 KR100538655B1 KR10-2001-0043556A KR20010043556A KR100538655B1 KR 100538655 B1 KR100538655 B1 KR 100538655B1 KR 20010043556 A KR20010043556 A KR 20010043556A KR 100538655 B1 KR100538655 B1 KR 100538655B1
- Authority
- KR
- South Korea
- Prior art keywords
- weight
- resin composition
- photosensitive resin
- methacrylate
- acid
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
구 분 | 감도(mJ/㎠) | 해상도 (㎛) | 투명성 (%) | 내열변색성 |
실시예 1 | 170 | 2 | 91 | ○ |
실시예 2 | 170 | 1 | 90 | ○ |
실시예 3 | 150 | 2 | 91 | ○ |
실시예 4 | 160 | 2 | 90 | ○ |
비교예 1 | 200 | 5 | 86 | × |
Claims (8)
- 감광성 수지 조성물에 있어서,(A) 하기 화학식 1로 표시되는 화합물;불포화 카르본산, 불포화 카르본산 무수물, 또는 이들의 혼합물; 및올레핀계 불포화 화합물을 공중합시켜 얻어진 아크릴계 공중합체; 및(B) 1,2-퀴논디아지드 화합물을 포함하는 것을 특징으로 하는 감광성 수지 조성물:[화학식 1]상기 화학식 1에서,R1 및 R2는 각각 동일하거나 다를 수 있으며, 각각 독립적으로 수소 원자, C1∼C5의 알킬기, 또는 C1∼C5의 알콕시기이다.
- 제 1 항에 있어서,상기 감광성 수지 조성물이(A) 상기 화학식 1로 표시되는 화합물 10 내지 70 중량%;불포화 카르본산, 불포화 카르본산 무수물, 또는 이들의 혼합물 5 내지 40 중량%; 및올레핀계 불포화 화합물 10 내지 70 중량%를 공중합시켜 얻어진 아크릴계 공중합체 100 중량부; 및(B) 1,2-퀴논디아지드 화합물 5 내지 100 중량부를 포함하는 것을 특징으로 하는 감광성 수지 조성물.
- 제 1 항 또는 제 2 항에 있어서,상기 (A) 아크릴계 공중합체의 폴리스타이렌 환산중량평균분자량(Mw)이 5,000 내지 30,000인 것을 특징으로 하는 감광성 수지 조성물.
- 제 1 항 또는 제 2 항에 있어서,상기 (A)ⅱ)의 불포화 카르본산, 불포화 카르본산 무수물, 또는 이들의 혼합물이 아크릴산, 메타크릴산, 말레인산, 푸마르산, 시트라콘산, 메사콘산, 이타콘산, 및 이들의 불포화 카르본산 무수물로 이루어진 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 감광성 수지 조성물.
- 삭제
- 제 1 항 또는 제 2 항에 있어서,상기 (A)ⅳ)의 올레핀계 불포화 화합물이 메틸메타크릴레이트, 에틸메타크릴레이트, n-부틸 메타크릴레이트, sec-부틸메타크릴레이트, t-부틸 메타크릴레이트, 메틸아크릴레이트, 이소프로필 아크릴레이트, 시클로헥실 메타크릴레이트, 2-메틸시클로 헥실메타크릴레이트, 디시클로펜타닐옥시에틸메타크릴레이트, 이소보로닐메타크릴레이트, 시클로헥실아크릴레이트, 2-메틸시클로헥실아크릴레이트, 디시클로펜타닐옥시에틸아크릴레이트, 이소보로닐아크릴레이트, 페닐메타크릴레이트, 페닐아크릴레이트, 벤질아크릴레이트, 2-히드록시에틸메타크릴레이트, 스타이렌, α-메틸 스타이렌, m-메틸 스타이렌, p-메틸 스타이렌, 비닐톨루엔, p-메틸 스타이렌, 1,3-부타디엔, 이소프렌, 및 2,3-디메틸 1,3-부타디엔으로 이루어진 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 감광성 수지 조성물.
- 삭제
- 제 1 항 또는 제 2 항에 있어서,상기 (B) 1,2-퀴논디아지드 화합물이 1,2-퀴논디아지드 4-술폰산 에스테르, 1,2-퀴논디아지드 5-술폰산 에스테르, 또는 1,2-퀴논디아지드 6-술폰산 에스테르인 것을 특징으로 하는 감광성 수지 조성물.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2001-0043556A KR100538655B1 (ko) | 2001-07-19 | 2001-07-19 | 감광성 수지 조성물 |
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KR10-2001-0043556A KR100538655B1 (ko) | 2001-07-19 | 2001-07-19 | 감광성 수지 조성물 |
Publications (2)
Publication Number | Publication Date |
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KR20030008706A KR20030008706A (ko) | 2003-01-29 |
KR100538655B1 true KR100538655B1 (ko) | 2005-12-23 |
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KR10-2001-0043556A KR100538655B1 (ko) | 2001-07-19 | 2001-07-19 | 감광성 수지 조성물 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101206780B1 (ko) * | 2005-03-03 | 2012-11-30 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 |
KR100922844B1 (ko) * | 2007-12-13 | 2009-10-20 | 제일모직주식회사 | 절연막 형성용 감광성 수지 조성물 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63189857A (ja) * | 1987-02-02 | 1988-08-05 | Nippon Paint Co Ltd | ポジ型感光性樹脂組成物 |
JPH06118648A (ja) * | 1991-12-10 | 1994-04-28 | Konica Corp | ポジ型感光性組成物及び画像形成方法 |
JPH07159998A (ja) * | 1993-12-06 | 1995-06-23 | Japan Synthetic Rubber Co Ltd | レジスト組成物 |
US5436279A (en) * | 1991-05-24 | 1995-07-25 | Rutgerswerke Aktingesellschaft | Coating materials containing a reaction product of an epoxy novolak resin and an olefinically unsaturated carboxylic acid crosslinkable by radiation |
JPH11288087A (ja) * | 1998-04-03 | 1999-10-19 | Hitachi Chem Co Ltd | 感光性樹脂組成物 |
-
2001
- 2001-07-19 KR KR10-2001-0043556A patent/KR100538655B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63189857A (ja) * | 1987-02-02 | 1988-08-05 | Nippon Paint Co Ltd | ポジ型感光性樹脂組成物 |
US5436279A (en) * | 1991-05-24 | 1995-07-25 | Rutgerswerke Aktingesellschaft | Coating materials containing a reaction product of an epoxy novolak resin and an olefinically unsaturated carboxylic acid crosslinkable by radiation |
JPH06118648A (ja) * | 1991-12-10 | 1994-04-28 | Konica Corp | ポジ型感光性組成物及び画像形成方法 |
JPH07159998A (ja) * | 1993-12-06 | 1995-06-23 | Japan Synthetic Rubber Co Ltd | レジスト組成物 |
JPH11288087A (ja) * | 1998-04-03 | 1999-10-19 | Hitachi Chem Co Ltd | 感光性樹脂組成物 |
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KR20030008706A (ko) | 2003-01-29 |
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