KR100537584B1 - 트렌치 커패시터의 매입 플레이트 형성 방법 - Google Patents
트렌치 커패시터의 매입 플레이트 형성 방법 Download PDFInfo
- Publication number
- KR100537584B1 KR100537584B1 KR10-2004-0043069A KR20040043069A KR100537584B1 KR 100537584 B1 KR100537584 B1 KR 100537584B1 KR 20040043069 A KR20040043069 A KR 20040043069A KR 100537584 B1 KR100537584 B1 KR 100537584B1
- Authority
- KR
- South Korea
- Prior art keywords
- trench
- impurity source
- substrate
- forming
- sidewalls
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 104
- 239000003990 capacitor Substances 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 89
- 239000012535 impurity Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims description 42
- 150000004767 nitrides Chemical class 0.000 claims description 41
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 41
- 229910052785 arsenic Inorganic materials 0.000 description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000013459 approach Methods 0.000 description 8
- 230000015654 memory Effects 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000075 oxide glass Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003923 SiC 4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0387—Making the trench
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/604,081 | 2003-06-25 | ||
| US10/604,081 US6969648B2 (en) | 2003-06-25 | 2003-06-25 | Method for forming buried plate of trench capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20050001324A KR20050001324A (ko) | 2005-01-06 |
| KR100537584B1 true KR100537584B1 (ko) | 2005-12-20 |
Family
ID=33564129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-0043069A KR100537584B1 (ko) | 2003-06-25 | 2004-06-11 | 트렌치 커패시터의 매입 플레이트 형성 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6969648B2 (ja) |
| JP (1) | JP4091929B2 (ja) |
| KR (1) | KR100537584B1 (ja) |
| TW (1) | TWI294667B (ja) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6967137B2 (en) * | 2003-07-07 | 2005-11-22 | International Business Machines Corporation | Forming collar structures in deep trench capacitors with thermally stable filler material |
| US7232718B2 (en) * | 2003-09-17 | 2007-06-19 | Nanya Technology Corp. | Method for forming a deep trench capacitor buried plate |
| DE102004029516B3 (de) * | 2004-06-18 | 2005-12-29 | Infineon Technologies Ag | Herstellungsverfahren für eine Schattenmaske in einem Graben einer mikroelektronischen oder mikromechanischen Struktur sowie Verwendung derselben |
| KR100696761B1 (ko) * | 2005-07-29 | 2007-03-19 | 주식회사 하이닉스반도체 | 웨이퍼 마크 형성 방법 |
| US7619872B2 (en) | 2006-05-31 | 2009-11-17 | Intel Corporation | Embedded electrolytic capacitor |
| US7709341B2 (en) * | 2006-06-02 | 2010-05-04 | Micron Technology, Inc. | Methods of shaping vertical single crystal silicon walls and resulting structures |
| US7628932B2 (en) | 2006-06-02 | 2009-12-08 | Micron Technology, Inc. | Wet etch suitable for creating square cuts in si |
| US7625776B2 (en) * | 2006-06-02 | 2009-12-01 | Micron Technology, Inc. | Methods of fabricating intermediate semiconductor structures by selectively etching pockets of implanted silicon |
| US7494891B2 (en) * | 2006-09-21 | 2009-02-24 | International Business Machines Corporation | Trench capacitor with void-free conductor fill |
| US7563670B2 (en) * | 2006-11-13 | 2009-07-21 | International Business Machines Corporation | Method for etching single-crystal semiconductor selective to amorphous/polycrystalline semiconductor and structure formed by same |
| US7858514B2 (en) * | 2007-06-29 | 2010-12-28 | Qimonda Ag | Integrated circuit, intermediate structure and a method of fabricating a semiconductor structure |
| US20090170331A1 (en) * | 2007-12-27 | 2009-07-02 | International Business Machines Corporation | Method of forming a bottle-shaped trench by ion implantation |
| US7888723B2 (en) * | 2008-01-18 | 2011-02-15 | International Business Machines Corporation | Deep trench capacitor in a SOI substrate having a laterally protruding buried strap |
| US9484269B2 (en) * | 2010-06-24 | 2016-11-01 | Globalfoundries Inc. | Structure and method to control bottom corner threshold in an SOI device |
| US8592883B2 (en) * | 2011-09-15 | 2013-11-26 | Infineon Technologies Ag | Semiconductor structure and method for making same |
| US20130102123A1 (en) * | 2011-10-19 | 2013-04-25 | Nanya Technology Corporation | Method for fabricating single-sided buried strap in a semiconductor device |
| TW201440118A (zh) * | 2013-04-11 | 2014-10-16 | Anpec Electronics Corp | 半導體功率元件的製作方法 |
| KR102312040B1 (ko) * | 2016-01-19 | 2021-10-14 | 한국전자통신연구원 | 반도체 소자의 선택적 도핑 방법 |
| CN113497006A (zh) * | 2020-03-20 | 2021-10-12 | 中芯国际集成电路制造(北京)有限公司 | 电容结构及其形成方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US629088A (en) * | 1899-01-24 | 1899-07-18 | William Schimper & Co | Ink-well stand. |
| US6008103A (en) * | 1998-02-27 | 1999-12-28 | Siemens Aktiengesellschaft | Method for forming trench capacitors in an integrated circuit |
| US6190988B1 (en) | 1998-05-28 | 2001-02-20 | International Business Machines Corporation | Method for a controlled bottle trench for a dram storage node |
| US6225158B1 (en) | 1998-05-28 | 2001-05-01 | International Business Machines Corporation | Trench storage dynamic random access memory cell with vertical transfer device |
| EP0971414A1 (de) | 1998-06-15 | 2000-01-12 | Siemens Aktiengesellschaft | Grabenkondensator mit Isolationskragen und vergrabenen Kontakt und entsprechendes Herstellungsverfahren |
| US6177696B1 (en) * | 1998-08-13 | 2001-01-23 | International Business Machines Corporation | Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devices |
| DE19842665C2 (de) * | 1998-09-17 | 2001-10-11 | Infineon Technologies Ag | Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen |
| US6232171B1 (en) * | 1999-01-11 | 2001-05-15 | Promos Technology, Inc. | Technique of bottle-shaped deep trench formation |
| US6426254B2 (en) * | 1999-06-09 | 2002-07-30 | Infineon Technologies Ag | Method for expanding trenches by an anisotropic wet etch |
| TW429613B (en) | 1999-10-21 | 2001-04-11 | Mosel Vitelic Inc | Dynamic random access memory with trench type capacitor |
| US6319788B1 (en) | 1999-12-14 | 2001-11-20 | Infineon Technologies North America Corp. | Semiconductor structure and manufacturing methods |
| US6282115B1 (en) | 1999-12-22 | 2001-08-28 | International Business Machines Corporation | Multi-level DRAM trench store utilizing two capacitors and two plates |
| US6365485B1 (en) | 2000-04-19 | 2002-04-02 | Promos Tech., Inc, | DRAM technology of buried plate formation of bottle-shaped deep trench |
| US6495411B1 (en) | 2000-07-13 | 2002-12-17 | Promos Technology Inc. | Technique to improve deep trench capacitance by increasing surface thereof |
| US6437401B1 (en) | 2001-04-03 | 2002-08-20 | Infineon Technologies Ag | Structure and method for improved isolation in trench storage cells |
| JP2003142604A (ja) * | 2001-11-05 | 2003-05-16 | Toshiba Corp | 半導体記憶装置とその製造方法 |
| TWI300948B (ja) * | 2002-09-27 | 2008-09-11 | Nanya Technology Corp |
-
2003
- 2003-06-25 US US10/604,081 patent/US6969648B2/en not_active Expired - Lifetime
-
2004
- 2004-06-11 KR KR10-2004-0043069A patent/KR100537584B1/ko not_active IP Right Cessation
- 2004-06-11 TW TW093116877A patent/TWI294667B/zh not_active IP Right Cessation
- 2004-06-22 JP JP2004183609A patent/JP4091929B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050001324A (ko) | 2005-01-06 |
| US6969648B2 (en) | 2005-11-29 |
| JP4091929B2 (ja) | 2008-05-28 |
| TWI294667B (en) | 2008-03-11 |
| TW200518277A (en) | 2005-06-01 |
| JP2005019994A (ja) | 2005-01-20 |
| US20050009268A1 (en) | 2005-01-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| LAPS | Lapse due to unpaid annual fee |