KR100510062B1 - Method for forming titanium nitride layer - Google Patents
Method for forming titanium nitride layer Download PDFInfo
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- KR100510062B1 KR100510062B1 KR10-1998-0033446A KR19980033446A KR100510062B1 KR 100510062 B1 KR100510062 B1 KR 100510062B1 KR 19980033446 A KR19980033446 A KR 19980033446A KR 100510062 B1 KR100510062 B1 KR 100510062B1
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- 238000000034 method Methods 0.000 title claims abstract description 31
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 84
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000003405 preventing effect Effects 0.000 abstract description 5
- 238000001465 metallisation Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000002265 prevention Effects 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Abstract
금속 배선 형성 (Metalization)에서 확산방지막으로 사용되는 TiN막 형성 방법에 관한 것으로, 화학기상증착법으로 TiN막을 형성하는 과정에서 소오스 가스의 유량을 변화시켜 각기 다른 결정립 구조를 갖는 다층의 TiN막을 형성하여 TiN막의 확산방지 특성을 향상시키는 방법이다. 이와 같이 본 발명은 피복특성이 뛰어난 화학기상증착 방법으로 TiN막을 형성함에 있어서, TiCl4의 유량을 변화시켜 불연속적인 주상 구조로 이루어지는 다층의 TiN막을 형성하거나, 각각의 층이 주상 구조 및 등방형 구조로 이루어지는 다층의 TiN막을 함으로써, TiN막의 확산방지 특성을 향상시킬 수 있다. 이와 같이 확산 방지 특성이 향상된 TiN막을 고단차의 콘택을 갖는 64M 디램(DRAM) 이상의 집적도를 갖는 반도체 소자의 금속배선 형성 공정에 도입함으로써, 고집적 반도체 소자의 콘택저항을 낮추고 누설전류를 줄일 수 있어 소자의 신뢰성 향상 및 소자 특성의 안정화를 꾀할 수 있다.The present invention relates to a TiN film forming method used as a diffusion barrier in metallization. In the process of forming a TiN film by chemical vapor deposition, the flow rate of source gas is varied to form a multi-layered TiN film having different grain structures. It is a method of improving the diffusion preventing property of the membrane. As described above, in the present invention, in forming the TiN film by the chemical vapor deposition method having excellent coating properties, the flow rate of TiCl 4 is varied to form a multilayered TiN film having a discontinuous columnar structure, or each layer has a columnar structure and an isotropic structure. By providing a multilayered TiN film made of a film, the diffusion preventing property of the TiN film can be improved. By introducing a TiN film with improved diffusion prevention characteristics into the metallization process of a semiconductor device having an integration degree of 64M DRAM or higher with a high level of contact, the contact resistance and leakage current of the highly integrated semiconductor device can be reduced. It is possible to improve reliability and stabilize device characteristics.
Description
본 발명은 반도체 장치 제조 방법에 관한 것으로 특히, 금속 배선 형성 (Mentalization)에서 확산방지막으로 사용되는 TiN막 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of forming a TiN film used as a diffusion barrier in metallization.
반도체 소자가 고집적화 되어감에 따라 금속 배선을 형성하기 위한 콘택의 크기도 작아지고 있다. 이와 같은 이유로, TiN 등의 확산방지막을 물리기상증착법(physical vapor deposition, PVD) 보다는 피복 특성이 뛰어난 화학기상증착법(chemical vapor deposition)법으로 형성하고 있다.As semiconductor devices become more integrated, the size of contacts for forming metal wirings is also decreasing. For this reason, diffusion barrier films such as TiN are formed by chemical vapor deposition, which has superior coating properties than physical vapor deposition (PVD).
그러나, TiCl4 소오스를 이용하여 TiN막을 화학기상증착법으로 형성할 경우는, TiN막이 주상 구조(columnar structure)를 가지게 됨에 따라 결정립(grain)과 결정립 사이에 빈 공간(void)이 발생하는데, 이러한 빈 공간은 물질의 확산 경로가 됨으로 인하여, 물리기상증착법에 비하여 우수한 확산방지특성을 얻을 수 없다는 것이 알려져 있다.However, when the TiN film is formed by chemical vapor deposition using a TiCl 4 source, as the TiN film has a columnar structure, voids are generated between grains and grains. Since space becomes a diffusion path of the material, it is known that excellent diffusion preventing properties cannot be obtained as compared with physical vapor deposition.
종래의 TiN 증착하는 방법은, 저압 화학기상증착(Low Pressure Chemical Vapor Deposition)에서 TiCl4(Titanium Tetra-Chloride)와 NH3 가스를 다음의 반응식1과 같이 반응시켜 600℃ 이상의 온도에서 형성한다.In the conventional TiN deposition method, TiCl 4 (Titanium Tetra-Chloride) and NH 3 gas are reacted in a low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition) as shown in the following scheme 1 to form at a temperature of 600 ℃ or more.
[반응식 1]Scheme 1
TiCl4 + NH3 → TiN + HClTiCl 4 + NH 3 → TiN + HCl
TiN막을 형성하기 위하여 반응 챔버 내에 흘려주는 TiCl4의 양에 따라 TiN 막 구조 형상은 많은 영향을 받는데, 적은 양의 TiCl4를 흘려줄 경우에는 주상 구조에서의 결정립이 크게 형성되어 상대적으로 치밀하지 않은 구조를 갖게되어 결정립간의 빈 공간이 크고, 많은 양의 TiCl4를 흘려줄 경우에는 결정립이 작게 형성되어 결정립간의 빈 공간이 상대적으로 줄어들며, 보다 많은 양의 TiCl4를 흘려줄 경우에는 주상 구조가 아닌 등방형 구조가 형성될 수 있다.The TiN film structure shape is greatly influenced by the amount of TiCl 4 flowing into the reaction chamber to form the TiN film. When a small amount of TiCl 4 is flowed, crystal grains in the columnar structure are large and are not relatively dense. It has a structure, so that the empty space between grains is large, and when a large amount of TiCl 4 flows, crystal grains are formed small, and the empty space between grains is relatively reduced, and when a larger amount of TiCl 4 is flowed, it is not a columnar structure. Isotropic structures can be formed.
종래에는 TiN막을 형성하기 위하여 TiCl4를 10sccm 이하로 일정하게 흘려주는데 이는 과도한 TiCl4 흐름(flow)에 의하여 하지면(underlayer)이 침식되는 것을 방지하고자함이다. 그러나, TiN막 형성에서 일정량의 TiCl4를 흘려줌으로 인하여 도1에 도시한 바와 같이 주상 구조(A)가 막 단면의 위 및 아래에 걸쳐 연속적으로 형성되고, 이러한 주상 구조(A)로 이루어지는 결정립(B) 사이에 발생한 빈 공간(C) 또한 연속적으로 연결되어 있어 TiN막 상에 형성될 금속막과 하지층 간에 원하지 않는 물질들의 상호 확산의 경로로 이용되어, 이온 주입된 콘택지역이 영향을 받아 콘택 저항이 불안정해지고 누설전류가 증가하는 현상이 나타나 소자의 신뢰도를 저하시키고 있다.Conventionally, TiCl 4 is constantly flowed to 10 sccm or less to form a TiN film, which is to prevent the underlayer from being eroded by excessive TiCl 4 flow. However, due to flowing a certain amount of TiCl 4 in the formation of the TiN film, as shown in Fig. 1, the columnar structure A is continuously formed over and below the cross section of the film, and the crystal grains composed of this columnar structure A are formed. The empty space C generated between (B) is also continuously connected and used as a path of mutual diffusion of unwanted materials between the metal film and the underlying layer to be formed on the TiN film, thereby affecting the ion implanted contact region. The contact resistance becomes unstable and the leakage current increases to reduce the reliability of the device.
상기와 같은 문제점을 해결하기 위하여 안출된 본 발명은 TiN막의 확산방지 특성 보다 향상시킬 수 있는 TiN막 형성 방법을 제공하는데 그 목적이 있다.The present invention devised to solve the above problems is an object of the present invention to provide a TiN film forming method that can improve the diffusion prevention characteristics of the TiN film.
상기와 같은 문제점을 해결하기 위하여 안출된 본 발명은, 화학기상증착법을 이용한 TiN막 형성 방법에 있어서, 주상 구조(columnar structure)의 결정립을 갖는 제1 TiN막을 형성하는 제1 단계; 및 상기 제1 TiN막 형성을 위한 소오스 가스와 동일한 가스를 이용하되, 상기 제1 단계 보다 많은 유량의 소오스 가스를 주입하여, 상기 제1 TiN막과 엇갈리는 결정립 구조를 갖는 제2 TiN막을 상기 제1 TiN막 상에 형성하는 제2 단계를 포함하는 TiN막 형성 방법을 제공한다.In order to solve the above problems, the present invention provides a TiN film forming method using chemical vapor deposition, comprising: a first step of forming a first TiN film having crystal grains of columnar structure; And a second TiN film having a crystal grain structure intersected with the first TiN film by using a source gas having the same gas as that of the source gas for forming the first TiN film but having a higher flow rate than the first step. A TiN film forming method comprising a second step of forming on a TiN film is provided.
본 발명은 화학기상증착법으로 TiN막을 형성하는 과정에서 소오스 가스의 유량을 변화시켜 각기 다른 결정립 구조를 갖는 다층의 TiN막을 형성하여 TiN막의 확산방지 특성을 향상시키는 방법이다.The present invention is a method of improving the diffusion preventing properties of the TiN film by forming a multi-layer TiN film having different grain structure by changing the flow rate of the source gas in the process of forming the TiN film by chemical vapor deposition.
이하, 첨부된 도면 도2를 참조하여 본 발명의 일실시예를 설명한다.Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.
전체 500Å 두께의 TiN막을 화학기상증착법으로 형성하기 위하여 우선, TiCl4를 4.5sccm 내지 5.5sccm 유량으로 흘려주면서 주상 구조의 제1 TiN막(10)을 전체 두께의 1/10 내지 1/5 두께 즉, 50 Å 내지 100 Å 두께로 증착한다. 이어서, TiCl4의 유량을 9sccm 내지 11sccm으로 변화시켜 제1 TiN막(10) 보다 결정립 크기가 작은 주상 구조의 제2 TiN막(20)을 전체 두께의 5/4 내지 9/10 두께 즉, 400 Å 내지 450 Å 두께로 제1 TiN막(10) 상에 증착한다.First, in order to form a TiN film of the total thickness of 500Å as a chemical vapor deposition process, the TiCl 4 While flowing at a flow rate of 4.5 sccm to 5.5 sccm, the first TiN film 10 having a columnar structure is deposited at a thickness of 1/10 to 1/5 of the total thickness, that is, 50 kPa to 100 kPa. Then, the flow rate of TiCl 4 was The second TiN film 20 having a columnar structure having a smaller grain size than the first TiN film 10 by changing from 9 sccm to 11 sccm is formed in a thickness of 5/4 to 9/10, that is, 400 to 450 mm thick. 1 TiN film 10 is deposited.
이와 같이 TiCl4의 유량을 변화시키면서 TiN막을 형성할 경우, 도2에서 도시한 것처럼 결정립의 크기가 각기 다른 주상구조의 TiN막(10, 20)이 형성되어 전체 TiN막의 중간에 두층을 차단시키는 계면(I)이 존재하게 되어 물질의 확산 경로인 보이드(C)가 연결되지 않도록하여 TiN막의 확산방지막 특성을 향상시킨다.As described above, when the TiN film is formed while varying the flow rate of TiCl 4 , as shown in FIG. 2, TiN films 10 and 20 having columnar structures having different crystal grain sizes are formed to block two layers in the middle of the entire TiN film. (I) is present so that the void C, which is a diffusion path of the material, is not connected, thereby improving the diffusion barrier properties of the TiN film.
본 발명의 다른 실시예에서는, TiCl4를 4.5sccm 내지 11sccm 유량으로 흘려주면서 주상 구조의 제1 TiN막을 화학기상증착법으로 증착한 후, TiCl4를 20sccm 이상의 유량으로 흘려주면서 등방형 구조의 제2 TiN막을 제1 TiN막 상에 증착한다.In another embodiment of the invention, TiCl 4 After depositing the first TiN film having a columnar structure by chemical vapor deposition while flowing at a flow rate of 4.5 sccm to 11 sccm, TiCl 4 was deposited. A second TiN film having an isotropic structure is deposited on the first TiN film while flowing at a flow rate of 20 sccm or more.
전술한 바와 같이 본 발명은 TiN막 증착시 TiCl4의 유량에 따라 구조의 크기 및 형상이 변화하는 것을 이용하여, TiCl4의 유량을 TiN막 형성 과정에서 일정하게 하지 않고 변화시킴으로써 확산 경로를 차단한다.As described above, the present invention blocks the diffusion path by changing the flow rate of TiCl 4 without making it constant during the TiN film formation, by using a structure whose size and shape change according to the flow rate of TiCl 4 during deposition of the TiN film. .
전술한 본 발명에 있어서, 상기 TiN막을 형성하기 위한 소오스 가스에 TiI4를 첨가할 수도 있으며, 이때, TiI4 가스의 유량은 0.01sccm 내지 50sccm으로 변화시키는 것이 가능하다. 이때, TiN막의 형성 온도는 100℃ 내지 900℃이며, TiN막의 두께는 10Å 내지 1000Å으로 형성한다.In the present invention described above, TiI 4 may be added to the source gas for forming the TiN film, and at this time, the flow rate of the TiI 4 gas may be changed from 0.01 sccm to 50 sccm. At this time, the formation temperature of a TiN film is 100 to 900 degreeC, and the thickness of a TiN film is formed to be 10 kPa-1000 kPa.
또한, TiN막 형성을 형성하기 위하여 소오스 가스에 N2 및 H2가 혼합된 가스 또는 NH3 가스를 반응가스로 첨가하기도 한다.In addition, a gas in which N 2 and H 2 are mixed with a source gas or NH 3 gas may be added as a reaction gas to form a TiN film.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the technical field of the present invention without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.
예로서, 상기 본 발명의 일실시예 및 본 발명의 다른 실시예에서 제1 TiN막 및 제2 TiN막 형성을 위한 일련의 과정을 적어도 한 번 실시하여, 제1 TiN막 및 제2 TiN막이 번갈아 형성된 다층 구조의 TiN막을 형성할 수도 있다.For example, in one embodiment of the present invention and another embodiment of the present invention, a series of processes for forming the first TiN film and the second TiN film are performed at least once, so that the first TiN film and the second TiN film alternately. It is also possible to form a formed TiN film having a multilayer structure.
상기와 같이 이루어지는 본 발명은 피복특성이 뛰어난 화학기상증착 방법으로 TiN막을 형성함에 있어서, TiCl4의 유량을 변화시켜 불연속적인 주상 구조의 결정립을 갖는 다층의 TiN막을 형성하거나, 각각의 층이 주상 구조 및 등방형 구조의 결정립으로 이루어지는 다층의 TiN막을 함으로써, TiN막의 확산방지 특성을 향상시킬 수 있다. 이와 같이 확산 방지 특성이 향상된 TiN막을 고단차의 콘택을 갖는 64M 디램(DRAM) 이상의 집적도를 갖는 반도체 소자의 금속배선 형성 공정에 도입함으로써, 고집적 반도체 소자의 콘택저항을 낮추고 누설전류를 줄일 수 있어 소자의 신뢰성 향상 및 소자 특성의 안정화를 꾀할 수 있다.In the present invention as described above, in forming the TiN film by the chemical vapor deposition method having excellent coating properties, the flow rate of TiCl 4 is changed to form a multilayered TiN film having crystal grains of discrete columnar structure, or each layer has a columnar structure. And a multilayer TiN film composed of crystal grains having an isotropic structure, the diffusion preventing property of the TiN film can be improved. By introducing a TiN film with improved diffusion prevention characteristics into the metallization process of a semiconductor device having an integration degree of 64M DRAM or higher with a high level of contact, the contact resistance and leakage current of the highly integrated semiconductor device can be reduced. It is possible to improve reliability and stabilize device characteristics.
도1은 종래 기술에 따라 형성된 TiN막의 구조도1 is a structural diagram of a TiN film formed according to the prior art;
도2는 본 발명의 일실시예에 따라 형성된 TiN막의 구조도2 is a structural diagram of a TiN film formed according to an embodiment of the present invention;
Claims (8)
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