KR100702113B1 - Method for forming the TiN of Capacitor - Google Patents
Method for forming the TiN of Capacitor Download PDFInfo
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- KR100702113B1 KR100702113B1 KR1020000065043A KR20000065043A KR100702113B1 KR 100702113 B1 KR100702113 B1 KR 100702113B1 KR 1020000065043 A KR1020000065043 A KR 1020000065043A KR 20000065043 A KR20000065043 A KR 20000065043A KR 100702113 B1 KR100702113 B1 KR 100702113B1
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000003990 capacitor Substances 0.000 title claims abstract description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 38
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 13
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 44
- 239000012495 reaction gas Substances 0.000 abstract description 11
- 239000003989 dielectric material Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Chemical Vapour Deposition (AREA)
Abstract
본 발명은 커패시터의 상부전극 형성 공정 중 티타늄질화막 형성방법에 관한 것으로, 커패시터의 티타늄질화막 상부전극 형성 시 반응가스 NH3 에 의한 하부 유전물질 Ta2O5 의 손실을 막기위해 TiCl4 소스와 함께 N2 및 H2를 사용하는 첫 번째 단계와, NH3 를 사용하는 두 번째 단계로 각각의 반응가스를 공급하여 티타늄질화막을 형성함으로서, 첫 번째 단계에서 TiCl4 소스와 함께 N2 및 H2 반응에 의해 증착된 티타늄질화막으로 인해 Ta2O5와 NH3의 반응에 의한 Ta2O
5 박막의 손실을 막을 수 있으므로 누설전류의 손실을 억제할 수 있어 반도체 소자의 특성, 신뢰성 및 수율을 향상시키고 그에 따른 반도체 소자의 고집적화를 가능하게 하는 기술로 매우 유용하고 효과적인 장점을 지닌 발명에 관한 것이다.
The present invention relates to a method of forming a titanium nitride film during the formation of the upper electrode of the capacitor, in order to prevent the loss of the lower dielectric material Ta 2 O 5 by the reaction gas NH 3 when forming the titanium nitride upper electrode of the capacitor together with the TiCl 4 source. The first step using 2 and H 2 , and the second step using NH 3 , supplying the respective reaction gases to form a titanium nitride film, so that in the first step the reaction of N 2 and H 2 with TiCl 4 source is carried out. Due to the titanium nitride film deposited by Ta 2 O 5 It is possible to prevent the loss of Ta 2 O 5 thin film due to the reaction of NH 3 to suppress the loss of leakage current to improve the characteristics, reliability and yield of the semiconductor device and accordingly high integration of the semiconductor device The invention relates to inventions having useful and effective advantages.
티타늄질화막, CVDTitanium Nitride Film, CVD
Description
도 1a 내지 도 1b는 본 발명의 커패시터의 티타늄질화막 형성방법을 순차적으로 나타낸 단면도이다.
1A to 1B are cross-sectional views sequentially illustrating a method of forming a titanium nitride film of a capacitor of the present invention.
-- 도면의 주요부분에 대한 부호의 설명 -- -Explanation of symbols for the main parts of the drawing-
1 : 폴리실리콘 기판 3 : 탄탈륨산화막1: polysilicon substrate 3: tantalum oxide film
5 : 제 1 티타늄질화막 9 : 제 2 티타늄질화막
5: first titanium nitride film 9: second titanium nitride film
본 발명은 반도체 소자 중 커패시터 형성방법에 관한 것으로, 보다 상세하게는 커패시터의 티타늄질화막 상부전극 형성 시 반응가스 NH3 에 의한 하부 유전물질 Ta2O5 의 손실을 막기위해 TiCl4 소스와 함께 N2 및 H2 를 사용하는 첫 번째 단계와, NH3 를 사용하는 두 번째 단계로 각각의 반응가스를 공급하여 티타늄질화막을 형성함으로서, Ta2O5와 NH3의 반응에 의한 Ta2O5 박막의 손실을 막을 수 있으므로 누설전류의 손실을 억제하도록 하는 커패시터의 티타늄질화막 형성방법에 관한 것이다. The present invention relates to a method of forming a capacitor in a semiconductor device, and more particularly, in order to prevent the loss of the lower dielectric material Ta 2 O 5 by the reaction gas NH 3 when forming the titanium nitride film upper electrode of the capacitor, together with the N 2 source with TiCl 4. and in the first step using H 2, and by supplying each of the reaction gas to form a titanium nitride film as the second step using the NH 3, and Ta 2 O 5 Since the loss of the Ta 2 O 5 thin film due to the reaction of NH 3 can be prevented and relates to a method for forming a titanium nitride film of the capacitor to suppress the loss of leakage current.
통상적으로, 확산 방지층은 상부물질과 하부물질 사이, 예컨대 금속막과 실리콘 기판 사이, 또는 커패시터에서는 폴리실리콘막과 탄탈늄산화막(Ta2O5) 사이에 형성되어 두 물질간의 상호 원자 확산을 방지하고자 할 때 사용된다. 이러한 확산방지막층으로 가장 널리 사용되고 있는 것이 티타늄질화막(TiN)이다. Typically, a diffusion barrier layer is formed between an upper material and a lower material, such as between a metal film and a silicon substrate, or between a polysilicon film and a tantalum oxide film (Ta 2 O 5 ) in a capacitor to prevent mutual atomic diffusion between the two materials. It is used when The most widely used as such a diffusion barrier layer is a titanium nitride film (TiN).
종래의 티타늄질화막은 초기에 물리적기상증착(PVD : Physical Vapor Deposion) 방법으로 형성하였으나, 커패시터의 구조가 3차원 구조로 됨으로써 물리적기상증착 방법에 의한 티타늄질화막 형성 시 계단 도포 특성이 만족되지 못하여 누설전류 손실이 발생하며, 비저항 및 확산방지 특성을 동시에 만족시키지 못하는 문제점이 있다.
Conventional titanium nitride film was initially formed by physical vapor deposition (PVD) method, but since the structure of the capacitor is a three-dimensional structure, when the titanium nitride film is formed by the physical vapor deposition method, the step application characteristics are not satisfied, so the leakage current Loss occurs, and there is a problem in that it does not satisfy the specific resistance and diffusion prevention characteristics at the same time.
본 발명은 상기와 같은 문제점을 해결하기 위해 안출된 것으로, 본 발명의 목적은 커패시터의 티타늄질화막 상부전극 형성 시 반응가스 NH3 에 의한 하부 유전물질 탄탈륨산화막(Ta2O5)의 손실을 막기위해 TiCl4 소스와 함께 N2
및 H2를 사용하여 화학기상증착(CVD : Chemical Vapor Deposition)으로 티타늄질화막을 증착하는 첫 번째 단계와, 반응가스로 NH3 를 사용하여 화학기상증착으로 티타늄질화막을 증착하는 두 번째 단계로 각각의 반응가스를 공급하여 티타늄질화막을 형성함으로서, 탄탈륨산화막(Ta2O5)과 NH3의 반응에 의한 탄탈륨산화막(Ta
2O5)박막의 손실을 줄여서 누설전류의 손실을 억제하도록 하는 것이 목적이다.
The present invention has been made to solve the above problems, an object of the present invention to prevent the loss of the lower dielectric material tantalum oxide film (Ta 2 O 5 ) by the reaction gas NH 3 when forming the titanium nitride film upper electrode of the capacitor. The first step is to deposit a titanium nitride film by chemical vapor deposition (CVD) using N 2 and H 2 with a TiCl 4 source, and the titanium nitride film is deposited by chemical vapor deposition using NH 3 as a reaction gas. In the second step to form a titanium nitride film by supplying each reaction gas, tantalum oxide film (Ta 2 O 5 ) and It is an object to reduce the loss of leakage current by reducing the loss of a tantalum oxide film (Ta 2 O 5 ) thin film by the reaction of NH 3 .
상기 목적을 달성하기 위하여, 본 발명은 소정의 하부구조를 갖는 실리콘 기판 상에 탄탈륨산화막(Ta2O5)을 증착한 후, TiCl4 소스와 함께 N2 및 H2 를 사용하여 화학기상증착법으로 티타늄질화막을 증착하는 제 1단계와, 상기 결과물 상에 TiCl4 소스와 함께 NH3 를 사용하여 화학기상증착법으로 티타늄질화막을 증착하는 제 2단계를 포함하여 이루어진 커패시터의 티타늄질화막 형성방법을 제공한다. In order to achieve the above object, the present invention is to deposit a tantalum oxide film (Ta 2 O 5 ) on a silicon substrate having a predetermined substructure, and then by chemical vapor deposition using N 2 and H 2 with a TiCl 4 source A method of forming a titanium nitride film comprising a first step of depositing a titanium nitride film and a second step of depositing a titanium nitride film by chemical vapor deposition using NH 3 together with a TiCl 4 source on the resultant are provided.
본 발명은 커패시터의 티타늄질화막 상부전극 형성 시 반응가스 NH3 에 의한 하부 유전물질 Ta2O5 의 손실을 막기위해 TiCl4 소스와 함께 N2 및 H2를 사용하는 첫 번째 단계와, NH3 를 사용하는 두 번째 단계로 각각의 반응가스를 공급하여 티타늄질화막을 형성함으로서, 탄탈륨산화막(Ta2O5)과 NH3의 반응에 의한 Ta2O5 박막의 손실을 줄여서 누설전류의 손실을 억제할 수 있다.
The present invention is a first step and, NH 3 using the N 2 and H 2 with TiCl 4 the source to prevent loss of the lower dielectric material Ta 2 O 5 based on titanium nitride top electrode formed in the reaction gas NH 3 of the capacitor In the second step of using, by supplying each reaction gas to form a titanium nitride film, tantalum oxide film (Ta 2 O 5 ) and The loss of the leakage current can be suppressed by reducing the loss of the Ta 2 O 5 thin film due to the reaction of NH 3 .
이하, 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대해 상세히 설 명하고자 한다. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1a에 도시된 바와 같이, 소정의 하부 구조를 갖는 실리콘 기판(1) 상에 탄탈륨산화막(Ta2O5)(3)을 증착한 후, TiCl4 소스와 함께 N2 및 H2를 반응가스로 사용하여 화학기상증착(CVD : Chemical Vapor Deposition)법으로 제 1티타늄질화막(5)을 증착한다. 여기서 상기 제 1티타늄질화막(5) 증착 시 350∼800℃의 온도범위로 0.01∼100 Torr의 압력범위에서 진행되며, 상기 제 1티타늄질화막(5)을 10∼100Å으로 증착한다.As shown in FIG. 1A, after depositing a tantalum oxide film (Ta 2 O 5 ) 3 on a
도 1b에 도시된 바와 같이, 상기 결과물 상에 TiCl4 소스와 함께 NH3 를 사용하여 화학기상증착 방법으로 제 2티타늄질화막(9)을 증착한다. 상기 제 2티타늄질화막(9)은 200∼1000Å의 두께로 증착할 수 있다. 이때 상기 탄탈륨산화막(3)이 NH3 반응가스에 직접 노출되는 것을 막아주는 캡핑 장벽(capping barrier) 역할을 함으로써, 상기 탄탈륨산화막(3)의 손실을 막아준다. As shown in FIG. 1B, a second titanium nitride film 9 is deposited on the resultant by chemical vapor deposition using NH 3 together with a TiCl 4 source. The second titanium nitride film 9 may be deposited to a thickness of 200 to 1000 GPa. At this time, the
여기서, 상기 제 1단계와 제 2단계를 동일한 챔버 내에서 진행하거나 다른 챔버에서 제 1단계와 제 2단계를 별도로 진행할 수 있다.In this case, the first and second steps may be performed in the same chamber or the first and second steps may be separately performed in another chamber.
그리고, 후속열처리 공정을 실시하여 상기 티타늄질화막 내 염소(Cl)함량을 감소시켜 준다.
Subsequently, a subsequent heat treatment process is performed to reduce the chlorine (Cl) content in the titanium nitride film.
따라서, 상기한 바와 같이, 본 발명에 따른 커패시터의 티타늄질화막 형성방법을 이용하게 되면, 커패시터의 티타늄질화막 상부전극 형성 시 반응가스 NH3 에 의한 하부 유전물질 탄탈륨산화막(Ta2O5)의 손실을 막기위해 TiCl4 소스와 함께 N2 및 H2를 사용하는 첫 번째 단계와, NH3 를 사용하는 두 번째 단계로 각각의 반응가스를 공급하여 티타늄질화막을 형성함으로서, Ta2O5와 NH3의 반응에 의한 Ta2O5 박막의 손실을 줄여서 누설전류의 손실을 억제하도록 하는 매우 유용하고 효과적인 발명이다. Therefore, as described above, when the method of forming the titanium nitride film of the capacitor according to the present invention is used, the loss of the lower dielectric material tantalum oxide film (Ta 2 O 5 ) by the reaction gas NH 3 when the titanium nitride film upper electrode is formed. The first step using N 2 and H 2 with TiCl 4 source and the second step using NH 3 to prevent the supply of the reaction gas to form a titanium nitride film, Ta 2 O 5 and It is a very useful and effective invention to reduce the loss of leakage current by reducing the loss of Ta 2 O 5 thin film by the reaction of NH 3 .
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