KR100551352B1 - Deposition method of tungsten plug by using chemical vapor deposition chamber - Google Patents

Deposition method of tungsten plug by using chemical vapor deposition chamber Download PDF

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KR100551352B1
KR100551352B1 KR1020030028803A KR20030028803A KR100551352B1 KR 100551352 B1 KR100551352 B1 KR 100551352B1 KR 1020030028803 A KR1020030028803 A KR 1020030028803A KR 20030028803 A KR20030028803 A KR 20030028803A KR 100551352 B1 KR100551352 B1 KR 100551352B1
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chamber
tungsten
tungsten plug
idle time
completed
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KR20040096012A (en
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장용순
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동부아남반도체 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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Abstract

본 발명은 화학적기상증착(CVD) 챔버 장치를 이용한 텅스텐 플러그 증착방법에 관한 것으로, 챔버의 아이들 시간을 확인하여 아이들 시간이 일정시간을 경과하였는가를 판정하는 단계와, 아이들 시간이 일정시간을 경과한 것으로 판정되면 챔버의 시즈닝을 실시하는 단계와, 시즈닝이 완료되면 반응 가스를 챔버내로 미량 공급하는 단계와, 반응 가스가 공급된 챔버의 퍼지를 실시하는 단계와, 퍼지가 완료되면 로트를 진행하는 단계를 포함하며, 텅스텐 플러그와 금속 배선 사이에 TiFx 등과 같은 반응 생성물이 형성되는 것을 방지하여 디바이스의 불량을 방지하는 이점이 있다.The present invention relates to a tungsten plug deposition method using a chemical vapor deposition (CVD) chamber apparatus, the method comprising: determining whether the idle time has elapsed by determining an idle time of the chamber, and when the idle time has elapsed by a predetermined time. When it is determined that the chamber is seasoned, when the season is completed, supplying a small amount of reaction gas into the chamber, purging the chamber in which the reactive gas is supplied, and proceeding with the lot when the purge is completed. It includes, and there is an advantage of preventing the failure of the device by preventing the reaction product, such as TiFx is formed between the tungsten plug and the metal wiring.

CVD, 텅스텐 플러그, 오버슈팅, TiFx, 반응 생성물CVD, tungsten plugs, overshooting, TiFx, reaction products

Description

화학적기상증착 챔버 장치를 이용한 텅스텐 플러그 증착방법{DEPOSITION METHOD OF TUNGSTEN PLUG BY USING CHEMICAL VAPOR DEPOSITION CHAMBER}Tungsten plug deposition method using chemical vapor deposition chamber apparatus {DEPOSITION METHOD OF TUNGSTEN PLUG BY USING CHEMICAL VAPOR DEPOSITION CHAMBER}

도 1a 내지 도 1d는 종래 기술에 따른 반도체 소자의 콘택/비아 제조방법의 공정 순서도,1A to 1D are process flowcharts of a method for manufacturing a contact / via of a semiconductor device according to the prior art;

도 2는 일반적인 화학적기상증착(CVD) 챔버 장치의 구성도,2 is a block diagram of a general chemical vapor deposition (CVD) chamber apparatus,

도 3은 종래 기술에 따른 CVD 챔버 장치를 이용한 텅스텐 플러그 증착 공정의 순서도,3 is a flowchart of a tungsten plug deposition process using a CVD chamber apparatus according to the prior art,

도 4는 본 발명에 따른 CVD 챔버 장치를 이용한 텅스텐 플러그 증착 공정의 순서도.4 is a flow chart of a tungsten plug deposition process using a CVD chamber apparatus in accordance with the present invention.

본 발명은 화학적기상증착(Chemical Vapor Deposition : 이하 CVD라 함) 챔버 장치를 이용한 텅스텐 플러그 증착방법에 관한 것으로, 더욱 상세하게는 챔버의 시즈닝이 완료되고 로트를 진행하기 이전에 챔버내에 반응가스를 미량 공급한 후 퍼지를 실시하여 반응 가스 MFC의 오버슈팅을 방지하도록 한 CVD 챔버 장치를 이용한 텅스텐 플러그 증착방법에 관한 것이다.The present invention relates to a tungsten plug deposition method using a chemical vapor deposition (CVD) chamber apparatus, and more particularly, a small amount of reaction gas in the chamber before the chamber is finished seasoning and the lot is processed. The present invention relates to a tungsten plug deposition method using a CVD chamber apparatus to purge after supplying to prevent overshooting of the reaction gas MFC.

주지와 같이, 현재 반도체 소자가 고집적화, 소형화됨에 따라 디자인 룰이 감소되고 콘택홀 또는 비아의 에스팩트 비율(aspect ratio)은 증가하는 추세에 따라 시정수(RC) 지연이 반도체 소자의 동작 속도를 결정하는 중요한 요인이 되고 있으며 다층 배선 구조를 채택하고 있다. 이에 따라 고집적화에 따른 미세한 콘택/비아의 형성은 반도체 소자의 제조 공정에 있어서 중요한 요소이다.As is well known, the time constant (RC) delay determines the operating speed of a semiconductor device as the design rules decrease and the aspect ratio of contact holes or vias increases as the semiconductor device becomes more integrated and smaller. Has become an important factor and adopts a multilayer wiring structure. Accordingly, formation of fine contacts / vias due to high integration is an important factor in the manufacturing process of semiconductor devices.

도 1a 내지 도 1d는 종래 기술에 따른 콘택/비아 제조방법을 순서적으로 나타낸 공정 순서도이다.1A to 1D are process flowcharts sequentially illustrating a method of manufacturing a contact / via according to the prior art.

먼저 도 1a에 도시된 바와 같이, 반도체 기판(10)에 소자 공정을 실시하고 금속 배선(12)을 형성한다. 그리고 금속 배선(12)이 형성된 반도체 기판(10)의 구조물에 층간 절연막(14)을 형성하고 배선들 사이의 전기적 연결 통로인 비아홀(16)을 형성한다.First, as shown in FIG. 1A, an element process is performed on the semiconductor substrate 10, and the metal wiring 12 is formed. The interlayer insulating layer 14 is formed in the structure of the semiconductor substrate 10 on which the metal wiring 12 is formed, and the via hole 16, which is an electrical connection path between the wirings, is formed.

이어서 도 1b에 도시된 바와 같이, 비아홀(16)이 형성된 층간 절연막(14) 상부에 장벽 금속막(18)으로서 Ti막(18a) 및 TiN막(18b)을 적층해서 형성한다. 이때, 장벽 금속막(18)은 물리적기상증착(Physical Vapor Deposition : 이하 PVD라 함) 공정 또는 CVD 공정으로 진행될 수 있으나 대개 PVD인 스퍼터링(sputtering) 방식으로 형성된다.Subsequently, as shown in FIG. 1B, a Ti film 18a and a TiN film 18b are stacked as a barrier metal film 18 on the interlayer insulating film 14 on which the via holes 16 are formed. In this case, the barrier metal film 18 may be formed by a physical vapor deposition (PVD) process or a CVD process, but is generally formed by a sputtering method, which is PVD.

그 다음 도 1c에 도시된 바와 같이, 장벽 금속막(18)이 형성된 비아홀(16)에 도전체 물질로서 텅스텐(W)(20)을 CVD로 증착하여 비아홀(16)을 매립한다.As shown in FIG. 1C, tungsten (W) 20 is deposited by CVD as a conductive material in the via hole 16 on which the barrier metal film 18 is formed to fill the via hole 16.

이후 도 1c에 도시된 바와 같이, 화학적기계적연마(Chemical Mechanical Polishing: 이하 CMP라 함) 공정으로 텅스텐(20) 및 장벽 금속막(18)을 연마해서 텅스텐 플러그(W plug)(20')을 형성한다. 이때 CMP 공정은 층간 절연막(14) 표면이 드러날 때까지 진행한다. 여기서, 텅스텐 플러그(20')는 비아를 구성하는 것으로 비아홀에 매립되는 텅스텐을 일컫는 것이다.Thereafter, as illustrated in FIG. 1C, the tungsten 20 and the barrier metal film 18 are polished by a chemical mechanical polishing (CMP) process to form a tungsten plug 20 '. do. At this time, the CMP process proceeds until the surface of the interlayer insulating film 14 is exposed. Here, the tungsten plug 20 'refers to tungsten embedded in the via hole as a part of the via.

한편, 도 1c의 공정인 텅스텐 플러그의 증착은 일반적으로 챔버 내로 도입한 반도체 재료 가스를 기판에서 화학 반응시킴으로써 기판 상에 반도체막을 성장시키는 CVD 챔버 장치를 이용하여 진행한다.On the other hand, deposition of the tungsten plug, which is the process of FIG. 1C, generally proceeds using a CVD chamber apparatus that grows a semiconductor film on a substrate by chemically reacting the semiconductor material gas introduced into the chamber on the substrate.

이러한 CVD 챔버 장치의 도 2에 나타낸 바와 같이, 챔버(33)로 가스를 공급하기 위한 공급 라인에 가스의 유량을 조절하는 캐리어 가스 MFC(Mass Flow Controller)(31) 및 반응 가스 MFC(32)가 연결되며, 챔버(33)에 연결된 펌핑라인에는 펌핑개폐밸브(34)가 연결되고 그 말단에 펌프(36)가 설치되고, 챔버(33)에 연결된 퍼지(Purge)라인에는 퍼지라인개폐밸브(35)가 연결되어 있다. 여기서, 통상적으로 캐리어 가스는 아르곤(Ar)을 사용하고, 반응 가스는 텅스텐 헥사플로라이드(WF6)를 사용한다.As shown in FIG. 2 of such a CVD chamber apparatus, a carrier gas mass flow controller (MFC) 31 and a reactive gas MFC 32 for adjusting the flow rate of gas are supplied to a supply line for supplying gas to the chamber 33. The pumping line valve 34 is connected to the pumping line connected to the chamber 33 and the pump 36 is installed at the end thereof, and the purge line opening valve 35 is connected to the purge line connected to the chamber 33. ) Is connected. Here, typically, the carrier gas uses argon (Ar), and the reaction gas uses tungsten hexafluoride (WF6).

상기와 같이 구성된 CVD 챔버 장치를 통해 수행되는 종래 기술에 따른 텅스텐 증착 공정을 도 3을 참조하여 설명하면, 먼저 챔버(33)의 아이들(Idle) 시간을 확인하여 아이들 시간이 일정시간을 경과하였는가를 판정한다(S51∼S52).Referring to FIG. 3, a tungsten deposition process according to the prior art, which is performed through the CVD chamber apparatus configured as described above, first checks the idle time of the chamber 33 to determine whether the idle time has elapsed for a predetermined time. It determines (S51-S52).

아이들 시간이 일정시간을 경과한 것으로 판정되면 챔버(33)의 시즈닝(Seasoning)을 실시하며, 챔버(33)의 시즈닝이 완료되면 로트(Lot)를 진행한다(S53∼S54).When it is determined that the idle time has elapsed a predetermined time, seasoning of the chamber 33 is performed, and when the seasoning of the chamber 33 is completed, lots are performed (S53 to S54).

그런데, 상기와 같은 종래 기술에 의하면 시즈닝이 완료되고 로트를 진행하 기까지의 사이시간에 반응 가스 MFC(32)의 오버슈팅(Overshooting)이 발생된다.However, according to the related art as described above, overshooting of the reaction gas MFC 32 occurs in a time period between seasoning and completion of the lot.

이때, 반응 가스인 텅스텐 헥사플로라이드(WF6)에 함유되어 있는 플루오린(F)이 반도체 기판 또는 불균일하게 증착된 장벽 금속막의 Ti과 반응성이 매우 좋아 쉽게 반응 생성물(TiF3, TiF4, SiFx 및 WSix 등)이 형성된다.At this time, the fluorine (F) contained in the reaction gas tungsten hexafluoride (WF6) is very reactive with Ti of the semiconductor substrate or the non-uniformly deposited barrier metal film, so that the reaction products (TiF3, TiF4, SiFx, WSix, etc.) are easily reacted. ) Is formed.

이에 따라, 텅스텐 증착 공정시 장벽 금속막(18)으로서 Ti막(18a) 상부에 TiN막(18b)을 적층함으로써 추가된 TiN막에 의해 플루오린(F)의 침투를 막아줌과 동시에 텅스텐(W)과의 접촉성을 증가시키고 있으나, 장벽 금속막(18)의 TiN(18b)은 주상 구조(columnar structure)를 갖기 때문에 밀도가 치밀(dense)하지 못하여 콘택홀/비아홀에서 불균일하게 증착될 경우 결정립을 통해서 텅스텐 헥사플로라이드(WF6)의 플루오린(F)이 용이하게 침투하게 된다.Accordingly, in the tungsten deposition process, the TiN film 18b is deposited on the Ti film 18a as the barrier metal film 18 to prevent the penetration of fluorine (F) by the added TiN film and at the same time tungsten (W). ), But the TiN (18b) of the barrier metal film 18 has a columnar structure, so the density is not dense and crystal grains are unevenly deposited in the contact hole / via hole. Through fluorine (F) of tungsten hexafluoride (WF6) is easily penetrated.

그러면, 도 1d와 같이 텅스텐 플러그(20')와 금속 배선(12) 사이에서 TiFx 등과 같은 반응 생성물(24)을 형성하게 되고, 이러한 반응 생성물(24)은 콘택/비아의 접촉 저항을 증가시켜 전류의 흐름을 방해하여 도우넛 형태의 디바이스 콘택 저항 페일(Fail)을 유발하거나 후속 열공정시 팽창해서 콘택/비아 오픈 또는 접촉 불량을 야기시키는 문제점이 있었다.Then, a reaction product 24, such as TiFx, is formed between the tungsten plug 20 'and the metal wire 12, as shown in FIG. 1D, and the reaction product 24 increases the contact resistance of the contact / via to increase the current. Interfering with the flow of the donut-type device contact resistance fail (Fail) or there is a problem that causes the contact / via opening or contact failure by expanding during the subsequent thermal process.

본 발명은 이와 같은 종래의 문제점을 해결하기 위하여 제안한 것으로, 챔버의 시즈닝이 완료되고 로트를 진행하기 이전에 챔버내에 반응가스를 미량 공급한 후 퍼지를 실시하여 반응 가스 MFC의 오버슈팅을 방지함으로써, 오버슈팅에 의해 텅스텐 플러그와 금속 배선 사이에 TiFx 등과 같은 반응 생성물이 형성되는 것을 방지하는 데 그 목적이 있다.The present invention has been proposed to solve such a conventional problem, by preventing the overshooting of the reaction gas MFC by performing a purge after supplying a small amount of reaction gas into the chamber before the seasoning of the chamber is completed and the lot, The purpose is to prevent the reaction product such as TiFx from being formed between the tungsten plug and the metal wiring by overshooting.

이와 같은 목적을 실현하기 위한 본 발명에 따른 CVD 챔버 장치를 이용한 텅스텐 플러그 증착방법은, 챔버의 아이들 시간을 확인하여 아이들 시간이 일정시간을 경과하였는 가를 판정하는 단계; 상기 아이들 시간이 일정시간을 경과한 것으로 판정되면 캐리어 가스인 아르곤과 반응 가스인 텅스텐 헥사플로라이드를 공급하여 상기 챔버의 시즈닝을 실시하는 단계; 상기 시즈닝이 완료되면 상기 반응 가스인 텅스텐 헥사플로라이드를 챔버 내로 공급하는 단계; 상기 반응 가스가 공급된 상기 챔버의 퍼지를 실시하는 단계; 상기 퍼지가 완료되면 로트를 진행하여 텅스텐을 증착하는 단계;를 포함한다.The tungsten plug deposition method using the CVD chamber apparatus according to the present invention for realizing the above object comprises the steps of: checking whether the idle time has elapsed by checking the idle time of the chamber; If it is determined that the idle time has elapsed, supplying argon as a carrier gas and tungsten hexafluoride as a reaction gas to perform seasoning of the chamber; Supplying the reaction gas, tungsten hexafluoride, into the chamber when the seasoning is completed; Purging the chamber supplied with the reaction gas; And depositing tungsten by proceeding with a lot when the purge is completed.

본 발명의 실시예로는 다수개가 존재할 수 있으며, 이하에서는 첨부한 도면을 참조하여 바람직한 실시예에 대하여 상세히 설명하기로 한다. 이 실시예를 통해 본 발명의 목적, 특징 및 이점들을 보다 잘 이해할 수 있게 된다.There may be a plurality of embodiments of the present invention. Hereinafter, preferred embodiments will be described in detail with reference to the accompanying drawings. This embodiment allows for a better understanding of the objects, features and advantages of the present invention.

도 4는 본 발명에 따른 CVD 챔버 장치를 이용한 텅스텐 플러그 증착 공정의 순서도이다.4 is a flow chart of a tungsten plug deposition process using a CVD chamber apparatus in accordance with the present invention.

이에 나타낸 바와 같이 본 발명의 텅스텐 플러그 증착 공정은, 챔버의 아이들(Idle) 시간을 확인하여 아이들 시간이 일정시간을 경과하였는가를 판정하는 단계(S101∼S102)와, 아이들 시간이 일정시간을 경과한 것으로 판정되면 챔버를 컨디셔닝하는 시즈닝(Seasoning)을 실시하는 단계(S103)와, 챔버의 시즈닝이 완료되면 반응 가스인 텅스텐 헥사플로라이드(WF6)를 챔버내로 미량 공급하는 단계(S104)와, 헥사플로라이드(WF6)가 공급된 챔버의 퍼지(Purge)를 실시하는 단계(S105)와, 퍼지가 완료되면 텅스텐 플러그의 양산을 위한 로트(Lot)를 진행하는 단계(S106)로 이루어진다.As described above, the tungsten plug deposition process of the present invention includes checking the idle time of the chamber to determine whether the idle time has passed a predetermined time (S101 to S102), and the idle time has passed a certain time. If it is determined that the step (Seasoning) for conditioning the chamber (S103), and when the seasoning of the chamber is completed, the step of supplying a small amount of tungsten hexafluoride (WF6) of the reaction gas into the chamber (S104), and hexaflo In step S105, a purge of the chamber supplied with the ride WF6 is performed, and when the purge is completed, a lot for mass production of the tungsten plug is performed (S106).

이와 같이 이루어진 텅스텐 플러그 증착 공정의 수행 과정을 도 2 및 도 4를 참조하여 아래에서 상세히 설명하기로 한다.The process of performing the tungsten plug deposition process thus made will be described in detail below with reference to FIGS. 2 and 4.

먼저, 챔버(33)의 아이들(Idle) 시간을 확인하여 아이들 시간이 일정시간을 경과하였는가를 판정한다(S101∼S102).First, the idle time of the chamber 33 is checked to determine whether the idle time has elapsed for a predetermined time (S101 to S102).

챔버(33)의 아이들 시간이 일정시간을 경과한 것으로 판정되면 시즈닝 조건에 맞추어 캐리어 가스 MFC(31) 및 반응 가스 MFC(32)를 통해 챔버(33)내로 공급되는 캐리어 가스인 아르곤과 반응 가스인 텅스텐 헥사플로라이드(WF6)의 유량을 조절하며, 펌핑개폐밸브(34)를 개방한 상태에서 펌프(36)를 구동시켜 챔버(33)내의 압력을 조절하면서 챔버(33)를 컨디셔닝하는 시즈닝을 실시한다(S103).When it is determined that the idle time of the chamber 33 has passed a predetermined time, argon and the reactive gas, which are carrier gases supplied into the chamber 33 through the carrier gas MFC 31 and the reactive gas MFC 32 in accordance with seasoning conditions, The flow rate of the tungsten hexafluoride (WF6) is adjusted, and the pump 33 is opened to drive the pump 36 to regulate the pressure in the chamber 33 while conditioning the chamber 33. (S103).

이후, 챔버(33)의 시즈닝이 완료되면 오버슈팅을 방지하기 위하여 반응 가스 MFC(32)를 통해 반응 가스인 텅스텐 헥사플로라이드(WF6)를 챔버(33)내로 미량 공급하고, 퍼지개폐밸브(35)를 개방하여 텅스텐 헥사플로라이드(WF6)가 공급된 챔버(33)에 대하여 충분한 퍼지(Purge)를 실시함으로써 잔류하는 텅스텐 헥사플로라이드(WF6)를 완전히 제거한다(S105).Subsequently, when seasoning of the chamber 33 is completed, a small amount of tungsten hexafluoride (WF6), which is a reaction gas, is supplied into the chamber 33 through the reaction gas MFC 32 to prevent overshooting, and the purge open / close valve 35 ) To sufficiently purge the remaining tungsten hexafluoride (WF6) by thoroughly purging the chamber 33 to which the tungsten hexafluoride (WF6) is supplied (S105).

다음으로, 챔버(33)에 대한 퍼지가 완료되면 통상의 텅스텐 플러그 증착 공정에서와 같이 공정 조건에 맞추어서 텅스텐 플러그의 양산을 위한 로트(Lot)를 진행한다(S106).Next, when the purge to the chamber 33 is completed, a lot for mass production of the tungsten plug is performed in accordance with the process conditions as in the conventional tungsten plug deposition process (S106).

상기에서는 본 발명의 일 실시예에 국한하여 설명하였으나 본 발명의 기술이 당업자에 의하여 용이하게 변형 실시될 가능성이 자명하다. 이러한 변형된 실시예들은 본 발명의 특허청구범위에 기재된 기술사상에 포함된다고 하여야 할 것이다.In the above description, but limited to one embodiment of the present invention, it is obvious that the technology of the present invention can be easily modified by those skilled in the art. Such modified embodiments should be included in the technical spirit described in the claims of the present invention.

전술한 바와 같이 본 발명은 챔버의 시즈닝이 완료되고 로트를 진행하기 이전에 챔버내에 반응가스를 미량 공급한 후 퍼지를 실시하여 반응 가스 MFC의 오버슈팅을 방지함으로써, 오버슈팅에 의해 텅스텐 플러그와 금속 배선 사이에 TiFx 등과 같은 반응 생성물이 형성되는 것을 방지한다. As described above, the present invention prevents overshooting of the reactant gas MFC by supplying a small amount of reaction gas into the chamber before purging the season and completing the lot, thereby preventing overshooting of the reactant gas MFC. The reaction product such as TiFx or the like is prevented from being formed between the wirings.

이에 따라, 종래 기술에서 반응 생성물이 콘택/비아의 접촉 저항을 증가시켜 전류의 흐름을 방해하여 도우넛 형태의 디바이스 콘택 저항 페일(Fail)을 유발하거나 후속 열공정시 팽창해서 콘택/비아 오픈 또는 접촉 불량을 야기시키는 문제점이 해소되는 효과가 있다.Accordingly, in the prior art, the reaction product increases the contact resistance of the contact / via, thereby interrupting the flow of current, causing a donut-type device contact resistance fail or expanding during a subsequent thermal process to prevent contact / via opening or contact failure. The problem causing is solved.

Claims (2)

삭제delete 챔버의 아이들 시간을 확인하여 아이들 시간이 일정시간을 경과하였는 가를 판정하는 단계;Checking an idle time of the chamber to determine whether the idle time has elapsed for a predetermined time; 상기 아이들 시간이 일정시간을 경과한 것으로 판정되면 캐리어 가스인 아르곤과 반응 가스인 텅스텐 헥사플로라이드를 공급하여 상기 챔버의 시즈닝을 실시하는 단계;If it is determined that the idle time has elapsed, supplying argon as a carrier gas and tungsten hexafluoride as a reaction gas to perform seasoning of the chamber; 상기 시즈닝이 완료되면 상기 반응 가스인 텅스텐 헥사플로라이드를 챔버 내로 공급하는 단계;Supplying the reaction gas, tungsten hexafluoride, into the chamber when the seasoning is completed; 상기 반응 가스가 공급된 상기 챔버의 퍼지를 실시하는 단계;Purging the chamber supplied with the reaction gas; 상기 퍼지가 완료되면 로트를 진행하여 텅스텐을 증착하는 단계;를 포함하는 화학적기상증착 챔버 장치를 이용한 텅스텐 플러그 증착방법.And depositing tungsten by proceeding with a lot when the purge is completed.
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