KR100506956B1 - 반도체장치형성방법및반도체장치제조방법 - Google Patents

반도체장치형성방법및반도체장치제조방법 Download PDF

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KR100506956B1
KR100506956B1 KR1019970004892A KR19970004892A KR100506956B1 KR 100506956 B1 KR100506956 B1 KR 100506956B1 KR 1019970004892 A KR1019970004892 A KR 1019970004892A KR 19970004892 A KR19970004892 A KR 19970004892A KR 100506956 B1 KR100506956 B1 KR 100506956B1
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South Korea
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laser
semiconductor film
linear
forming
film
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KR1019970004892A
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Korean (ko)
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KR970063427A (ko
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순페이 야마자끼
사또시 테라모토
나오토 쿠스모토
다게시 후구나가
세쓰오 나가지마
타다요시 미야모토
아쓰이 요시노우치
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
샤프 가부시키가이샤
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Publication of KR970063427A publication Critical patent/KR970063427A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10L—SPEECH ANALYSIS OR SYNTHESIS; SPEECH RECOGNITION; SPEECH OR VOICE PROCESSING; SPEECH OR AUDIO CODING OR DECODING
    • G10L17/00—Speaker identification or verification
    • G10L17/22—Interactive procedures; Man-machine interfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M3/00—Automatic or semi-automatic exchanges
    • H04M3/22—Arrangements for supervision, monitoring or testing
    • H04M3/229—Wire identification arrangements; Number assignment determination
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M3/00—Automatic or semi-automatic exchanges
    • H04M3/38—Graded-service arrangements, i.e. some subscribers prevented from establishing certain connections
    • H04M3/382—Graded-service arrangements, i.e. some subscribers prevented from establishing certain connections using authorisation codes or passwords
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/0016—Arrangements providing connection between exchanges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M2201/00—Electronic components, circuits, software, systems or apparatus used in telephone systems
    • H04M2201/40—Electronic components, circuits, software, systems or apparatus used in telephone systems using speech recognition
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M3/00—Automatic or semi-automatic exchanges
    • H04M3/22—Arrangements for supervision, monitoring or testing
    • H04M3/2281—Call monitoring, e.g. for law enforcement purposes; Call tracing; Detection or prevention of malicious calls
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M3/00—Automatic or semi-automatic exchanges
    • H04M3/38—Graded-service arrangements, i.e. some subscribers prevented from establishing certain connections
    • H04M3/382—Graded-service arrangements, i.e. some subscribers prevented from establishing certain connections using authorisation codes or passwords
    • H04M3/385—Graded-service arrangements, i.e. some subscribers prevented from establishing certain connections using authorisation codes or passwords using speech signals

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Signal Processing (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Audiology, Speech & Language Pathology (AREA)
  • Human Computer Interaction (AREA)
  • Acoustics & Sound (AREA)
  • Multimedia (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Security & Cryptography (AREA)
  • Recrystallisation Techniques (AREA)
KR1019970004892A 1996-02-15 1997-02-15 반도체장치형성방법및반도체장치제조방법 KR100506956B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP96-53738 1996-02-15
JP5373896 1996-02-15
JP96-93367 1996-03-23
JP9336796 1996-03-23
JP17189596 1996-06-11
JP96-171895 1996-06-11

Publications (2)

Publication Number Publication Date
KR970063427A KR970063427A (ko) 1997-09-12
KR100506956B1 true KR100506956B1 (ko) 2005-11-28

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US (2) US6599790B1 (US06835675-20041228-M00001.png)
KR (1) KR100506956B1 (US06835675-20041228-M00001.png)

Cited By (1)

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KR100831881B1 (ko) * 2000-08-10 2008-05-23 소니 가부시끼 가이샤 박막 반도체 장치

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US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
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JP3592535B2 (ja) 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3156776B2 (ja) * 1998-08-03 2001-04-16 日本電気株式会社 レーザ照射方法
TW544727B (en) * 1999-08-13 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
TW494444B (en) 1999-08-18 2002-07-11 Semiconductor Energy Lab Laser apparatus and laser annealing method
US6548370B1 (en) * 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
JP2001077366A (ja) * 1999-08-20 2001-03-23 Internatl Business Mach Corp <Ibm> 薄膜トランジスタ、液晶表示装置、及び薄膜トランジスタの製造方法
US6888096B1 (en) * 1999-09-28 2005-05-03 Sumitomo Heavy Industries, Ltd. Laser drilling method and laser drilling device
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7749818B2 (en) * 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW200302511A (en) * 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
CN1757093A (zh) 2002-08-19 2006-04-05 纽约市哥伦比亚大学托管会 具有多种照射图形的单步半导体处理系统和方法
JP4873858B2 (ja) 2002-08-19 2012-02-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エッジ領域を最小にするために基板のフィルム領域のレーザ結晶化処理方法及び装置並びにそのようなフィルム領域の構造
US7605023B2 (en) * 2002-08-29 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for a semiconductor device and heat treatment method therefor
JP4627961B2 (ja) * 2002-09-20 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6709910B1 (en) * 2002-10-18 2004-03-23 Sharp Laboratories Of America, Inc. Method for reducing surface protrusions in the fabrication of lilac films
US20040195222A1 (en) * 2002-12-25 2004-10-07 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
US7763828B2 (en) * 2003-09-02 2010-07-27 Ultratech, Inc. Laser thermal processing with laser diode radiation
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US20050236564A1 (en) * 2004-04-26 2005-10-27 Ciphergen Biosystems, Inc. Laser desorption mass spectrometer with uniform illumination of the sample
US7078323B2 (en) * 2004-09-29 2006-07-18 Sharp Laboratories Of America, Inc. Digital light valve semiconductor processing
KR100863581B1 (ko) * 2006-07-31 2008-10-15 (주)쓰리나인 콘트라스트 향상을 위한 구조물 형성방법
US8148663B2 (en) 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
TWI459444B (zh) 2009-11-30 2014-11-01 Applied Materials Inc 在半導體應用上的結晶處理
DE102012206125A1 (de) * 2012-04-13 2013-10-17 MTU Aero Engines AG Verfahren zur Herstellung von Niederdruckturbinenschaufeln aus TiAl
JP5980043B2 (ja) * 2012-08-22 2016-08-31 住友重機械工業株式会社 レーザ照射装置

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JPS63239843A (ja) * 1986-11-20 1988-10-05 Nec Corp レーザ利用配線形成方法
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JPH06124890A (ja) * 1992-08-27 1994-05-06 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置の作製方法。
JPH06295859A (ja) * 1992-11-06 1994-10-21 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5530040A (en) * 1995-04-14 1996-06-25 Ross; Donald B. Traction composition for rubber

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Publication number Priority date Publication date Assignee Title
KR100831881B1 (ko) * 2000-08-10 2008-05-23 소니 가부시끼 가이샤 박막 반도체 장치

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US6835675B2 (en) 2004-12-28
US20030119287A1 (en) 2003-06-26
US6599790B1 (en) 2003-07-29

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