KR100486113B1 - 렌즈 내장형 이미지 센서의 제조 방법 - Google Patents

렌즈 내장형 이미지 센서의 제조 방법 Download PDF

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Publication number
KR100486113B1
KR100486113B1 KR10-2002-0057071A KR20020057071A KR100486113B1 KR 100486113 B1 KR100486113 B1 KR 100486113B1 KR 20020057071 A KR20020057071 A KR 20020057071A KR 100486113 B1 KR100486113 B1 KR 100486113B1
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KR
South Korea
Prior art keywords
metal
lens
image sensor
film
iron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0057071A
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English (en)
Korean (ko)
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KR20040025218A (ko
Inventor
변성철
Original Assignee
매그나칩 반도체 유한회사
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Publication date
Application filed by 매그나칩 반도체 유한회사 filed Critical 매그나칩 반도체 유한회사
Priority to KR10-2002-0057071A priority Critical patent/KR100486113B1/ko
Priority to TW091138127A priority patent/TWI226080B/zh
Priority to JP2003005199A priority patent/JP4384417B2/ja
Priority to US10/365,987 priority patent/US6670205B1/en
Priority to CNB031026389A priority patent/CN1249805C/zh
Publication of KR20040025218A publication Critical patent/KR20040025218A/ko
Application granted granted Critical
Publication of KR100486113B1 publication Critical patent/KR100486113B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
KR10-2002-0057071A 2002-09-18 2002-09-18 렌즈 내장형 이미지 센서의 제조 방법 Expired - Fee Related KR100486113B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR10-2002-0057071A KR100486113B1 (ko) 2002-09-18 2002-09-18 렌즈 내장형 이미지 센서의 제조 방법
TW091138127A TWI226080B (en) 2002-09-18 2002-12-31 Manufacturing method of image detector with built-in lens
JP2003005199A JP4384417B2 (ja) 2002-09-18 2003-01-14 レンズ内蔵型イメージセンサーの製造方法
US10/365,987 US6670205B1 (en) 2002-09-18 2003-02-13 Method of fabricating image sensor equipped with lens
CNB031026389A CN1249805C (zh) 2002-09-18 2003-02-14 镜头内藏型图象传感器的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0057071A KR100486113B1 (ko) 2002-09-18 2002-09-18 렌즈 내장형 이미지 센서의 제조 방법

Publications (2)

Publication Number Publication Date
KR20040025218A KR20040025218A (ko) 2004-03-24
KR100486113B1 true KR100486113B1 (ko) 2005-04-29

Family

ID=29728798

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0057071A Expired - Fee Related KR100486113B1 (ko) 2002-09-18 2002-09-18 렌즈 내장형 이미지 센서의 제조 방법

Country Status (5)

Country Link
US (1) US6670205B1 (enExample)
JP (1) JP4384417B2 (enExample)
KR (1) KR100486113B1 (enExample)
CN (1) CN1249805C (enExample)
TW (1) TWI226080B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505894B1 (ko) * 2003-10-24 2005-08-01 매그나칩 반도체 유한회사 저온산화막의 박리현상을 개선한 시모스 이미지센서의제조방법
US7102159B2 (en) * 2004-06-12 2006-09-05 Macronix International Co., Ltd. Ultra thin image sensor package structure and method for fabrication
KR100821476B1 (ko) 2006-12-26 2008-04-11 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
CA2685080A1 (en) 2007-04-24 2008-11-06 Flextronics Ap Llc Small form factor modules using wafer level optics with bottom cavity and flip-chip assembly
US7825985B2 (en) * 2007-07-19 2010-11-02 Flextronics Ap, Llc Camera module back-focal length adjustment method and ultra compact components packaging
US9118825B2 (en) * 2008-02-22 2015-08-25 Nan Chang O-Film Optoelectronics Technology Ltd. Attachment of wafer level optics
US7916396B2 (en) * 2008-06-27 2011-03-29 Micron Technology, Inc. Lens master devices, lens structures, imaging devices, and methods and apparatuses of making the same
US9419032B2 (en) 2009-08-14 2016-08-16 Nanchang O-Film Optoelectronics Technology Ltd Wafer level camera module with molded housing and method of manufacturing
US10009528B2 (en) 2011-02-24 2018-06-26 Nan Chang O-Film Optoelectronics Technology Ltd Autofocus camera module packaging with circuitry-integrated actuator system
US8545114B2 (en) 2011-03-11 2013-10-01 Digitaloptics Corporation Auto focus-zoom actuator or camera module contamination reduction feature with integrated protective membrane
JP5893287B2 (ja) 2011-08-10 2016-03-23 ルネサスエレクトロニクス株式会社 半導体装置および基板
JP6076123B2 (ja) * 2013-02-14 2017-02-08 オリンパス株式会社 半導体基板、撮像素子、および撮像装置
JP6270339B2 (ja) * 2013-05-22 2018-01-31 オリンパス株式会社 撮像装置、撮像装置の製造方法、及び内視鏡システム
CN114422658A (zh) * 2020-10-28 2022-04-29 北京小米移动软件有限公司 摄像头模组的组装方法、装置、摄像头模组及电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970024249A (ko) * 1995-10-24 1997-05-30 이데이 노부유끼 수광 장치와 그 제조 방법(Micro Camera and Manufacturing Thereof)
JPH09187991A (ja) * 1996-01-08 1997-07-22 Canon Inc 露光装置およびこれを用いた画像形成装置
KR20010085459A (ko) * 2000-02-23 2001-09-07 다니구찌 이찌로오, 기타오카 다카시 촬상 장치
JP2001292354A (ja) * 2000-04-07 2001-10-19 Mitsubishi Electric Corp 撮像装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321628A (en) * 1980-04-02 1982-03-23 Xerox Corporation Scanning apparatus
JPH0642126B2 (ja) * 1988-10-26 1994-06-01 シャープ株式会社 投影型画像表示装置
US5719706A (en) * 1995-03-15 1998-02-17 Matsushita Electric Industrial Co., Ltd. Illuminating apparatus, projection lens, and display apparatus including the illumination apparatus and the projection lens
US5751387A (en) * 1995-07-28 1998-05-12 Fujitsu Limited Fresnel lens and liquid crystal display device
US5986297A (en) 1996-05-22 1999-11-16 Eastman Kodak Company Color active pixel sensor with electronic shuttering, anti-blooming and low cross-talk
GB9618720D0 (en) * 1996-09-07 1996-10-16 Philips Electronics Nv Electrical device comprising an array of pixels
NL1011381C2 (nl) 1998-02-28 2000-02-15 Hyundai Electronics Ind Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan.
KR100533166B1 (ko) 2000-08-18 2005-12-02 매그나칩 반도체 유한회사 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970024249A (ko) * 1995-10-24 1997-05-30 이데이 노부유끼 수광 장치와 그 제조 방법(Micro Camera and Manufacturing Thereof)
JPH09187991A (ja) * 1996-01-08 1997-07-22 Canon Inc 露光装置およびこれを用いた画像形成装置
KR20010085459A (ko) * 2000-02-23 2001-09-07 다니구찌 이찌로오, 기타오카 다카시 촬상 장치
JP2001292354A (ja) * 2000-04-07 2001-10-19 Mitsubishi Electric Corp 撮像装置

Also Published As

Publication number Publication date
JP2004111896A (ja) 2004-04-08
US6670205B1 (en) 2003-12-30
JP4384417B2 (ja) 2009-12-16
TWI226080B (en) 2005-01-01
TW200405430A (en) 2004-04-01
CN1484296A (zh) 2004-03-24
CN1249805C (zh) 2006-04-05
KR20040025218A (ko) 2004-03-24

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