CN1249805C - 镜头内藏型图象传感器的制造方法 - Google Patents

镜头内藏型图象传感器的制造方法 Download PDF

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Publication number
CN1249805C
CN1249805C CNB031026389A CN03102638A CN1249805C CN 1249805 C CN1249805 C CN 1249805C CN B031026389 A CNB031026389 A CN B031026389A CN 03102638 A CN03102638 A CN 03102638A CN 1249805 C CN1249805 C CN 1249805C
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CN
China
Prior art keywords
lens
metal
film
metal layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031026389A
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English (en)
Chinese (zh)
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CN1484296A (zh
Inventor
卞圣喆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MagnaChip Semiconductor Ltd
Original Assignee
Hynix Semiconductor Inc
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Publication date
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Publication of CN1484296A publication Critical patent/CN1484296A/zh
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Publication of CN1249805C publication Critical patent/CN1249805C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
CNB031026389A 2002-09-18 2003-02-14 镜头内藏型图象传感器的制造方法 Expired - Fee Related CN1249805C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR200257071 2002-09-18
KR10-2002-0057071A KR100486113B1 (ko) 2002-09-18 2002-09-18 렌즈 내장형 이미지 센서의 제조 방법

Publications (2)

Publication Number Publication Date
CN1484296A CN1484296A (zh) 2004-03-24
CN1249805C true CN1249805C (zh) 2006-04-05

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Family Applications (1)

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CNB031026389A Expired - Fee Related CN1249805C (zh) 2002-09-18 2003-02-14 镜头内藏型图象传感器的制造方法

Country Status (5)

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US (1) US6670205B1 (enExample)
JP (1) JP4384417B2 (enExample)
KR (1) KR100486113B1 (enExample)
CN (1) CN1249805C (enExample)
TW (1) TWI226080B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505894B1 (ko) * 2003-10-24 2005-08-01 매그나칩 반도체 유한회사 저온산화막의 박리현상을 개선한 시모스 이미지센서의제조방법
US7102159B2 (en) * 2004-06-12 2006-09-05 Macronix International Co., Ltd. Ultra thin image sensor package structure and method for fabrication
KR100821476B1 (ko) 2006-12-26 2008-04-11 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
CA2685080A1 (en) 2007-04-24 2008-11-06 Flextronics Ap Llc Small form factor modules using wafer level optics with bottom cavity and flip-chip assembly
US7825985B2 (en) * 2007-07-19 2010-11-02 Flextronics Ap, Llc Camera module back-focal length adjustment method and ultra compact components packaging
US9118825B2 (en) * 2008-02-22 2015-08-25 Nan Chang O-Film Optoelectronics Technology Ltd. Attachment of wafer level optics
US7916396B2 (en) * 2008-06-27 2011-03-29 Micron Technology, Inc. Lens master devices, lens structures, imaging devices, and methods and apparatuses of making the same
US9419032B2 (en) 2009-08-14 2016-08-16 Nanchang O-Film Optoelectronics Technology Ltd Wafer level camera module with molded housing and method of manufacturing
US10009528B2 (en) 2011-02-24 2018-06-26 Nan Chang O-Film Optoelectronics Technology Ltd Autofocus camera module packaging with circuitry-integrated actuator system
US8545114B2 (en) 2011-03-11 2013-10-01 Digitaloptics Corporation Auto focus-zoom actuator or camera module contamination reduction feature with integrated protective membrane
JP5893287B2 (ja) 2011-08-10 2016-03-23 ルネサスエレクトロニクス株式会社 半導体装置および基板
JP6076123B2 (ja) * 2013-02-14 2017-02-08 オリンパス株式会社 半導体基板、撮像素子、および撮像装置
JP6270339B2 (ja) * 2013-05-22 2018-01-31 オリンパス株式会社 撮像装置、撮像装置の製造方法、及び内視鏡システム
CN114422658A (zh) * 2020-10-28 2022-04-29 北京小米移动软件有限公司 摄像头模组的组装方法、装置、摄像头模组及电子设备

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US4321628A (en) * 1980-04-02 1982-03-23 Xerox Corporation Scanning apparatus
JPH0642126B2 (ja) * 1988-10-26 1994-06-01 シャープ株式会社 投影型画像表示装置
US5719706A (en) * 1995-03-15 1998-02-17 Matsushita Electric Industrial Co., Ltd. Illuminating apparatus, projection lens, and display apparatus including the illumination apparatus and the projection lens
US5751387A (en) * 1995-07-28 1998-05-12 Fujitsu Limited Fresnel lens and liquid crystal display device
JPH09181287A (ja) * 1995-10-24 1997-07-11 Sony Corp 受光装置とその製造方法
JPH09187991A (ja) * 1996-01-08 1997-07-22 Canon Inc 露光装置およびこれを用いた画像形成装置
US5986297A (en) 1996-05-22 1999-11-16 Eastman Kodak Company Color active pixel sensor with electronic shuttering, anti-blooming and low cross-talk
GB9618720D0 (en) * 1996-09-07 1996-10-16 Philips Electronics Nv Electrical device comprising an array of pixels
NL1011381C2 (nl) 1998-02-28 2000-02-15 Hyundai Electronics Ind Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan.
JP3651577B2 (ja) * 2000-02-23 2005-05-25 三菱電機株式会社 撮像装置
JP3607160B2 (ja) * 2000-04-07 2005-01-05 三菱電機株式会社 撮像装置
KR100533166B1 (ko) 2000-08-18 2005-12-02 매그나칩 반도체 유한회사 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법

Also Published As

Publication number Publication date
JP2004111896A (ja) 2004-04-08
US6670205B1 (en) 2003-12-30
JP4384417B2 (ja) 2009-12-16
TWI226080B (en) 2005-01-01
TW200405430A (en) 2004-04-01
CN1484296A (zh) 2004-03-24
KR100486113B1 (ko) 2005-04-29
KR20040025218A (ko) 2004-03-24

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Owner name: MAGNACHIP CO., LTD.

Free format text: FORMER OWNER: HYNIX SEMICONDUCTOR INC.

Effective date: 20070525

C41 Transfer of patent application or patent right or utility model
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Effective date of registration: 20070525

Address after: North Chungcheong Province

Patentee after: Magnachip Semiconductor Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Hairyoksa Semiconductor Co., Ltd.

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Owner name: KONO SCIENCE CO., LTD.

Free format text: FORMER OWNER: MAGNACHIP CO., LTD.

Effective date: 20090807

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Address before: North Chungcheong Province

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Termination date: 20160214

CF01 Termination of patent right due to non-payment of annual fee