KR100477960B1 - 노광장치의제조방법 - Google Patents

노광장치의제조방법 Download PDF

Info

Publication number
KR100477960B1
KR100477960B1 KR1019970010872A KR19970010872A KR100477960B1 KR 100477960 B1 KR100477960 B1 KR 100477960B1 KR 1019970010872 A KR1019970010872 A KR 1019970010872A KR 19970010872 A KR19970010872 A KR 19970010872A KR 100477960 B1 KR100477960 B1 KR 100477960B1
Authority
KR
South Korea
Prior art keywords
heat
heat generating
chamber
air
main body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970010872A
Other languages
English (en)
Korean (ko)
Other versions
KR970067657A (ko
Inventor
요시또모 나가하시
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR970067657A publication Critical patent/KR970067657A/ko
Application granted granted Critical
Publication of KR100477960B1 publication Critical patent/KR100477960B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
KR1019970010872A 1996-03-28 1997-03-27 노광장치의제조방법 Expired - Fee Related KR100477960B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP99320/1996 1996-03-28
JP8099320A JPH09266167A (ja) 1996-03-28 1996-03-28 環境制御チヤンバ

Publications (2)

Publication Number Publication Date
KR970067657A KR970067657A (ko) 1997-10-13
KR100477960B1 true KR100477960B1 (ko) 2005-08-09

Family

ID=14244353

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970010872A Expired - Fee Related KR100477960B1 (ko) 1996-03-28 1997-03-27 노광장치의제조방법

Country Status (3)

Country Link
US (2) US20010048513A1 (enExample)
JP (1) JPH09266167A (enExample)
KR (1) KR100477960B1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284210A (ja) * 2000-03-30 2001-10-12 Canon Inc 露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
US6621554B1 (en) * 2000-05-01 2003-09-16 Xerox Corporation Method and apparatus for controlling humidity in a copying device
JP2004158510A (ja) * 2002-11-01 2004-06-03 Canon Inc デバイス製造装置
US7253383B2 (en) * 2002-12-03 2007-08-07 Samsung Electronics Co., Ltd. Transformer assembly for microwave oven, method for manufacturing the same, and microwave oven having the same
US7329308B2 (en) * 2003-07-09 2008-02-12 Entegris, Inc. Air handling and chemical filtration system and method
US7150964B2 (en) * 2004-06-07 2006-12-19 Konica Minolta Medical & Graphic, Inc. Process for treating photothermographic dry imaging material
JP4689308B2 (ja) * 2005-03-18 2011-05-25 キヤノン株式会社 露光装置およびデバイス製造方法
US8170225B2 (en) * 2007-02-14 2012-05-01 Integrated Dynamics Engineering Gmbh Method for adapting a vibration isolation system
US7817262B2 (en) * 2007-06-27 2010-10-19 Vistec Semiconductor Systems Gmbh Device for measuring positions of structures on a substrate
US7572976B1 (en) * 2008-02-06 2009-08-11 Victor Merrill Quick connect electrical box
DE102010030260A1 (de) 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Prüfung der Haftfestigkeit einer Beschichtung auf einem Substrat
TW201346205A (zh) * 2012-01-13 2013-11-16 尼康股份有限公司 箱室裝置及隔熱板
KR20140105239A (ko) * 2013-02-22 2014-09-01 삼성디스플레이 주식회사 레이저 빔을 이용한 마스크 제조 방법 및 마스크 제조 장치
CN109427635B (zh) * 2017-08-29 2020-09-11 创意电子股份有限公司 半导体元件的测试设备及其搬运装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960002518A (ko) * 1994-06-17 1996-01-26 가네꼬 히사시 전자빔 노광 장치 및 전자빔 노광 장치의 교정 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4690528A (en) * 1983-10-05 1987-09-01 Nippon Kogaku K. K. Projection exposure apparatus
JPS61160934A (ja) * 1985-01-10 1986-07-21 Canon Inc 投影光学装置
DE3888876T2 (de) * 1987-06-15 1994-10-27 Canon Kk Belichtungsvorrichtung.
US4989031A (en) * 1990-01-29 1991-01-29 Nikon Corporation Projection exposure apparatus
US5326316A (en) * 1991-04-17 1994-07-05 Matsushita Electric Industrial Co., Ltd. Coupling type clean space apparatus
US6002987A (en) * 1996-03-26 1999-12-14 Nikon Corporation Methods to control the environment and exposure apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960002518A (ko) * 1994-06-17 1996-01-26 가네꼬 히사시 전자빔 노광 장치 및 전자빔 노광 장치의 교정 방법

Also Published As

Publication number Publication date
KR970067657A (ko) 1997-10-13
US6753942B2 (en) 2004-06-22
JPH09266167A (ja) 1997-10-07
US20010048513A1 (en) 2001-12-06
US20030058417A1 (en) 2003-03-27

Similar Documents

Publication Publication Date Title
KR100477960B1 (ko) 노광장치의제조방법
KR100443452B1 (ko) 주사형노광장치
JP3365571B2 (ja) 光学式計測装置及び露光装置
JP3913976B2 (ja) リソグラフ投影装置に用いる洗浄ガスシステム
KR100695988B1 (ko) 리소그래피 투영 장치에 사용되는 정화 가스 시스템
US9874823B2 (en) Exposure apparatus, exposure method, and device manufacturing method
KR100665750B1 (ko) 리소그래피 장치 및 디바이스 제조방법
TW200403543A (en) Reflection mirror apparatus, exposure apparatus and device manufacturing method
EP0844532A2 (en) Exposure apparatus
JP4065528B2 (ja) 恒温真空容器及びそれを用いた露光装置
JP4474871B2 (ja) 露光装置
JPWO2002101804A1 (ja) 露光装置及びデバイス製造方法、並びに温度安定化流路装置
WO2002054460A1 (fr) Dispositif d'exposition
JP2000091192A (ja) 露光装置
JP2794587B2 (ja) 投影露光装置
JP2005315707A (ja) 温度計測装置、露光装置、およびデバイス製造方法
JP4835970B2 (ja) 調整方法
US7460213B2 (en) Alignment apparatus, exposure apparatus, and device manufacturing method using exposure apparatus
US6903799B2 (en) Exposure method and exposure apparatus
JP3291832B2 (ja) 基板保持部材、および、露光装置
JP2002124451A (ja) 温度制御方法、温調チャンバ及び露光装置
JP2010021549A (ja) ステージ装置、露光装置、及びデバイス製造方法
JP2006134944A (ja) 露光装置
US6617555B1 (en) Imaging stabilization apparatus and method for high-performance optical systems
JPH09320927A (ja) 投影露光装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20080225

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20090311

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20090311

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000