KR100438944B1 - Surface treatment apparatus of metal using plasma - Google Patents
Surface treatment apparatus of metal using plasma Download PDFInfo
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- KR100438944B1 KR100438944B1 KR10-2001-0063135A KR20010063135A KR100438944B1 KR 100438944 B1 KR100438944 B1 KR 100438944B1 KR 20010063135 A KR20010063135 A KR 20010063135A KR 100438944 B1 KR100438944 B1 KR 100438944B1
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- process chamber
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- reaction promoting
- plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45576—Coaxial inlets for each gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
Abstract
본 발명은 플라즈마를 이용한 금속의 표면처리장치는 공정 챔버(101)의 일측에 언 와인더 챔버(102)가 설치되어 있고, 타측에는 와인더 챔버(103)가 설치되어 있으며, 언 와인더 챔버(102)의 내부에는 시트상태의 소재(106)를 공급하기 위한 언 와인더(107)가 설치되어 있으며, 상기 와인더 챔버(103)의 내부에는 공정 챔버(101)를 지나며 증착된 소재(106)를 감기위한 와인더(108)가 설치되어 있는 금속의 표면처리장치에서, 상기 공정 챔버(101)의 하측에 내부식성물질공급수단(110)을 설치하고, 그와는 별도로 반응촉진가스를 공정 챔버(101)의 내부로 공급하기 위한 반응촉진가스공급수단(120)을 설치하여, 반응촉진가스공급수단(120)을 통하여 플라즈마가 발생되는 공정 챔버(101)의 내측으로 적정비의 반응촉진가스를 균일하게 공급함으로써, 공정 챔버(101)의 내부를 지나며 소재에 증착되는 내부식성 물질의 두께 유니퍼머티를 개선할 수 있다.In the present invention, the surface treatment apparatus of a metal using plasma is provided with an unwinder chamber 102 on one side of the process chamber 101, a winder chamber 103 on the other side, and an unwinder chamber ( An unwinder 107 is provided in the interior of the 102 to supply a sheet material 106, and a material 106 deposited through the process chamber 101 inside the winder chamber 103. In the surface treatment apparatus of the metal is provided with a winder (108) for winding the anticorrosive material supply means 110 is installed on the lower side of the process chamber 101, and separately from the reaction promoting gas process chamber By installing the reaction promoting gas supply means 120 for supplying the inside of the 101, the appropriate amount of reaction promoting gas to the inside of the process chamber 101 where the plasma is generated through the reaction promoting gas supply means 120 By supplying uniformly, the inside of the process chamber 101 is supported. It said it is possible to improve the thickness of the Ti Uni permanent corrosion-resistant material is deposited on the material.
Description
본 발명은 플라즈마를 이용한 금속의 표면처리장치에 관한 것으로, 특히 액체 상태의 도금물질을 공정 챔버의 내부로 주입하기 위하여 설치된 버블링가스 주입관의 내벽에 도금물질이 응축되는 것을 방지할 수 있도록 한 플라즈마를 이용한 금속의 표면처리장치에 관한 것이다.The present invention relates to a surface treatment apparatus for metal using plasma, and in particular, to prevent the plating material from condensing on the inner wall of a bubbling gas injection tube installed to inject a liquid plating material into the process chamber. A surface treatment apparatus for metal using plasma.
통상적으로 에어컨의 실외기는 케이스의 내부에 열교환기가 설치되어 있고, 그 열교환기는 스테인레스 재질의 지지대와 알루미늄 재질의 방열핀 및 동 파이프로 구성되어 있다.Typically, the outdoor unit of the air conditioner is provided with a heat exchanger inside the case, the heat exchanger is composed of a stainless steel support, aluminum radiating fins and copper pipes.
상기와 같이 구성되는 에어컨 실외기는 옥외에 주로 설치되기 때문에 빗물이나 바람에 많이 노출되므로 부식에 잘 견디며 열교환능력이 우수한 재질을 선택하여 제작되어 진다.Since the outdoor unit of the air conditioner configured as described above is mainly installed outdoors, it is exposed to rainwater or wind, so it is manufactured by selecting a material that resists corrosion well and has excellent heat exchange ability.
그러나, 상기와 같은 통상적인 에어컨이 부식에 잘 견디는 재질로 되어 있음에도 불구하고, 서남아시아나 동남아시아의 해안가와 같이 고온다습하고 염분이 많은 지역의 외부에 설치되는 경우에 실외기용 열교환기의 방열핀들이 쉽게 부식되는 문제점이 있었다.However, even though the conventional air conditioner is made of a material that resists corrosion well, the heat radiation fins of the outdoor unit heat exchanger are easily corroded when installed outside the high temperature, high humidity and salty areas, such as the coasts of Southwest Asia and Southeast Asia. There was a problem.
이러한 점을 개선하고자 기후가 악조건인 곳에 설치되는 에어컨의 실외기들은 열교환기의 방열핀들을 제작할때에 표면에 Cr도금을 하여 내부식처리를 하게 되는데, 그와 같이 도금처리를 하는 경우에 어느정도 사용수명이 증가되어 개선이 되었다고 볼 수 있으나, 사용자들이 만족할 만큼 충분한 내부식성을 갖지 못하여 일정 기간이 지나면 부식에 의한 소손이 발생되는 문제점이 있었다.In order to improve this point, outdoor units of air conditioners installed in bad weather conditions are subjected to corrosion treatment by plating Cr on the surface when heat sinks of heat exchanger are manufactured. It can be seen that the improvement has been improved, but the user does not have enough corrosion resistance to satisfy the problem that the burnout caused by corrosion after a certain period of time.
상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 소재의 표면에 절연성의 내부식물질을 균일하게 증착시켜서 내부식성을 증대시키도록 하는데 적합한 플라즈마를 이용한 금속의 표면처리장치를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention devised in view of the above problems is to provide a metal surface treatment apparatus using plasma suitable for uniformly depositing an insulating corrosion resistant material on a surface of a material to increase corrosion resistance.
도 1은 본 발명의 플라즈마를 이용한 금속의 표면처리장치를 보인 개략구성도.1 is a schematic configuration diagram showing a surface treatment apparatus of a metal using a plasma of the present invention.
도 2는 본 발명에 따른 가스분사관의 설치상태를 보인 사시도.Figure 2 is a perspective view showing an installation state of the gas injection pipe according to the present invention.
** 도면의 주요 부분에 대한 부호의 설명 **** Description of symbols for the main parts of the drawing **
101 : 공정 챔버 104 : 상부 전극101: process chamber 104: upper electrode
105 : 하부 전극 106 : 소재105: lower electrode 106: material
107 : 언 와인더 108 : 와인더107: unwinder 108: winder
110 : 내부식물질공급수단 111 : 가스저장용기110: corrosion resistance material supply means 111: gas storage container
120 : 반응촉진가스공급수단 121 : 가스공급라인120: reaction promoting gas supply means 121: gas supply line
122 : 반응촉진가스분사관 122a : 가스분사홀122: reaction promoting gas injection pipe 122a: gas injection hole
123 : 유량조절기 124 : 밸브123: flow regulator 124: valve
상기와 같은 본 발명의 목적을 달성하기 위하여내부에 소재가 진행할 수 있는 일정공간부를 가지는 공정 챔버와,그 공정 챔버의 내부 상,하측에 일정간격을 두고 고정되며 공급되는 전원에 의하여 플라즈마를 발생시키기 위한 상,하부 전극과,상기 공정 챔버의 일측에 배치되어 공정 챔버의 입구부를 통하여 내측의 상,하부 전극 사이로 시트상태의 소재를 공급하기 위한 언 와인더와,상기 공정 챔버의 타측에 배치되어 공정 챔버의 배출구를 통하여 배출되는 시트상태의 시료를 감기 위한 와인더와,상기 소재에 내부식물질이 플라즈마증착될 수 있도록 공정 챔버의 내부로 내부식성 물질을 버블링시켜서 공급하기 위한 내부식물질공급수단 및그 내부식물질공급수단과 별도로 설치되어 공정 챔버의 내부에서 내부식성물질이 소재에 활발하게 부착될 수 있도록 반응을 촉진시키기 위한 반응촉진가스를 공정 챔버의 내부로 공급하기 위한 반응촉진가스공급수단으로 구성되고,In order to achieve the object of the present invention as described above, the process chamber having a predetermined space portion through which the material can proceed, and the plasma is generated by the power supplied and fixed at regular intervals above and below the inside of the process chamber. Upper and lower electrodes, and an unwinder disposed on one side of the process chamber to supply sheet material between upper and lower electrodes inside through an inlet of the process chamber, and disposed on the other side of the process chamber to process Winder for winding the sheet-like sample discharged through the discharge port of the chamber, Corrosion-resistant material supply means for supplying by bubbling the corrosion-resistant material into the process chamber so that the corrosion-resistant material is plasma-deposited on the material And it is installed separately from the corrosion resistance material supply means can be actively attached to the material corrosion resistant material in the process chamber And a reaction promoting gas supply means for supplying a reaction promoting gas to the inside of the process chamber to promote the reaction,
그 반응촉진가스공급수단은 상기 가스저장용기에 가스공급라인으로 연결되며 챔버의 내부로 반응촉진가스인 He가스를 적정비로 공급하기 위해 다수개의 가스분사홀들이 등간격으로 형성되며 소재를 감싸도록 사각 틀체상으로된 반응촉진가스분사관과, 상기 가스공급라인 상에 장착되어 가스공급라인으로 흐르는 He가스의 양을 조절하기 위한 유량조절기 및 가스공급라인으로 흐르는 가스의 개폐를 조절하기 위한 밸브로 구성된 것을 특징으로 하는 플라즈마를 이용한 금속의 표면처리장치가 제공된다.The reaction promoting gas supply means is connected to the gas storage line by a gas supply line, and a plurality of gas injection holes are formed at equal intervals to supply He gas, which is the reaction promoting gas, to the inside of the chamber at an appropriate ratio, and surround the material. It is composed of a reaction promoting gas injection pipe formed of a frame, a flow regulator for adjusting the amount of He gas flowing in the gas supply line and a valve for controlling the opening and closing of the gas flowing in the gas supply line Provided is a surface treatment apparatus for metal using plasma.
이하, 상기와 같이 구성되는 본 발명 플라즈마를 이용한 금속의 표면처리장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings, the surface treatment apparatus of the metal using the present invention plasma configured as described above in more detail as follows.
도 1은 본 발명의 플라즈마를 이용한 금속의 표면처리장치를 보인 개략구성도이고, 도 2는 본 발명에 따른 가스분사관의 설치상태를 보인 사시도이다.1 is a schematic configuration diagram showing a metal surface treatment apparatus using a plasma of the present invention, Figure 2 is a perspective view showing the installation state of the gas injection pipe according to the present invention.
도시된 바와 같이, 본 발명 플라즈마를 이용한 금속의 표면처리장치는 박스체인 공정 챔버(101)의 일측에 언 와인더 챔버(102)가 연통되도록 설치되어 있고, 타측에는 와인더 챔버(103)가 연통되도록 설치되어 있다.As shown, the surface treatment apparatus of the metal using the plasma of the present invention is installed so that the unwinder chamber 102 communicates with one side of the box chain process chamber 101, and the winder chamber 103 communicates with the other side. It is installed if possible.
그리고, 상기 공정 챔버(101)의 내부 상측에는 상부 전극(104)이 고정되어 있고, 그 상부 전극(104)의 하측에는 하부 전극(105)이 고정되어 있으며, 상기 언와인더 챔버(102)의 내측에는 시트 상태의 소재(106)가 감겨있는 언 와인더(107)가 설치되어 있고, 와인더 챔버(103)의 내부에는 언 와인더(107)에서 공급된 소재(106)가 플라즈마가 발생되는 상부 전극(104)과 하부 전극(105) 사이를 지나며 증착되어 감겨질 수 있도록 와인더(108)가 설치되어 있다.In addition, an upper electrode 104 is fixed to an upper side of the inside of the process chamber 101, and a lower electrode 105 is fixed to a lower side of the upper electrode 104. An unwinder 107 is formed on the inside of which is wound the raw material 106, and inside the winder chamber 103, a plasma is generated from the raw material 106 supplied from the unwinder 107. The winder 108 is installed to be deposited and wound between the upper electrode 104 and the lower electrode 105.
또한, 상기 공정 챔버(101)의 하부 일측에는 공정 챔버(101)의 내부를 지나는 소재(106)에 HMDSO(Hexamethyldisiloxane, (CH3)3SiOSi(CH3)3)가 플라즈마 증착될 수 있도록 공정 챔버(101)의 내부로 액체상태의 HMDSO를 버블링시켜서 공급하기 위한 내부식물질공급수단(110)이 설치되어 있고, 타측에는 그 내부식물질공급수단(110)과 별도로 설치되어 공정 챔버(101)의 내부에서 HMDSO가 소재(106)에 활발하게 부착될 수 있도록 반응을 촉진시키기 위한 He가스를 공정 챔버(103)의 내부로 공급하기 위한 반응촉진가스공급수단(120)이 설치되어 있다.In addition, the lower side of the process chamber 101, the process chamber so that HMDSO (Hexamethyldisiloxane, (CH 3 ) 3 SiOSi (CH 3 ) 3 ) can be plasma deposited on the material 106 passing through the interior of the process chamber 101 Corrosion-resistant material supply means 110 for bubbling and supplying the liquid HMDSO into the interior of the 101 is provided, the other side is provided separately from the corrosion-resistant material supply means 110 is the process chamber 101 The reaction promoting gas supply means 120 for supplying the He gas for promoting the reaction to the interior of the process chamber 103 so that the HMDSO can be actively attached to the material 106 in the interior thereof.
상기 내부식물질공급수단(110)은 He가스가 저장되어 있는 가스저장용기(111)와, 그 가스저장용기(111)에 가스공급라인(112)으로 연결되며 액체상태의 HMDSO(113)가 저장되어 있는 스토리지 베셀(Storage Vessel)(114)과, 그 스토리지 베셀(114)에 버블링가스 주입라인(115)으로 연결되며 챔버(101)의 내부로 버블링된 HMDSO를 분사할 수 있도록 챔버(101)의 입구측에 설치되는 버블링가스분사관(116)과, 상기 가스공급라인(112) 상에 장착되어 가스의 흐르는 양을 조절하기 위한 유량조절기(117) 및 가스공급라인(112)으로 공급되는 가스의 개폐를 조절하기 위한 밸브(118)로 구성되어 있다.The corrosion resistant material supply means 110 is connected to the gas storage container 111 in which the He gas is stored, the gas storage container 111 is connected to the gas supply line 112 and the liquid HMDSO 113 is stored. The storage vessel 114, which is connected to the storage vessel 114, and a bubbling gas injection line 115 to the storage vessel 114, allows the chamber 101 to spray the bubbled HMDSO into the chamber 101. Bubbling gas injection pipe 116 is installed on the inlet side of the) and is supplied to the flow regulator 117 and the gas supply line 112 mounted on the gas supply line 112 to adjust the flow amount of gas It consists of a valve 118 for controlling the opening and closing of the gas.
상기 가스분사관(116)은 중앙으로 소재(106)가 통과됨과 아울러 챔버(101)의 내부로 균일하게 분사될 수 있도록 사각틀형상으로 이루어지고, 그 가스분사관(116)의 측면에는 다수개의 가스분사홀(116a)들이 등간격으로 형성되어 있다.The gas injection pipe 116 is formed in a rectangular frame shape so that the material 106 is passed through the center and uniformly injected into the chamber 101, and a plurality of gases are provided on the side of the gas injection pipe 116. The injection holes 116a are formed at equal intervals.
상기 반응촉진가스공급수단(120)은 상기 가스저장용기(111)에 가스공급라인(121)으로 연결되며 챔버(101)의 내부로 반응촉진가스인 He가스를 적정비로 공급하기 위한 반응촉진가스분사관(122)과, 상기 가스공급라인(121) 상에 장착되어 가스공급라인(121)으로 흐르는 He가스의 양을 조절하기 위한 유량조절기(123) 및 가스공급라인(121)으로 흐르는 가스의 개폐를 조절하기 위한 밸브(124)로 구성되어 있다.The reaction promoting gas supply means 120 is connected to the gas storage container 111 by the gas supply line 121 and the reaction promoting gas powder for supplying the He gas which is the reaction promoting gas into the chamber 101 at an appropriate ratio. Opening and closing of the gas flowing through the pipe 122 and the flow rate regulator 123 and the gas supply line 121 for controlling the amount of He gas flowing on the gas supply line 121 is mounted on the gas supply line 121 It consists of a valve 124 for adjusting.
상기 반응촉진가스분사관(122)은 중앙으로 소재(106)가 통과됨과 아울러 챔버(103)의 내부로 가스가 균일하게 분사될 수 있도록 사각틀형상으로 이루어지고, 그 가스분사관(122)의 측면에는 다수개의 가스분사홀(122a)들이 등간격으로 형성되어 있다.The reaction promoting gas injection pipe 122 is made of a rectangular frame shape so that the material 106 is passed through the center and the gas is uniformly injected into the chamber 103, the side of the gas injection pipe 122 The plurality of gas injection holes 122a are formed at equal intervals.
한편, 도면에는 도시되지 않았으나 상부 전극(104)과 하부 전극(105)에 직류전원을 공급하기 위한 직류전원공급기(미도시)와, 언 와인더(107)와 와인더(108)을 회전시키기 위한 모터(미도시)가 구비되어 있다.Although not shown in the drawings, a DC power supply (not shown) for supplying DC power to the upper electrode 104 and the lower electrode 105, and an unwinder 107 and a winder 108 for rotating the DC power supply. A motor (not shown) is provided.
상기와 같이 구성되어 있는 본 발명에서 전원이 인가되어 언 와인더(107)가 시계반대방향으로 회전을 하고, 와인더(108)가 시계방향으로 회전을 하면 언 와인더(107)에 감겨있던 시트 상태의 소재(106)가 공정 챔버(101)의 내부에 설치된 상부 전극(104)과 하부 전극(105)의 사이를 통과하여 와인더(108)에 연속적으로 감기게 된다.In the present invention configured as described above, when the power is applied to the unwinder 107 rotates counterclockwise, when the winder 108 rotates clockwise, the sheet wound on the unwinder 107 The material 106 in a state passes between the upper electrode 104 and the lower electrode 105 installed in the process chamber 101 and is continuously wound on the winder 108.
그와 같은 상태에서 가스공급라인(112) 상에 설치된 밸브(118)를 열면 가스저장용기(111)에서 저장되어 있던 캐리어가스인 He가스가 스토리지 베셀(114)로 공급이 되고, 그와 같이 공급되는 캐리어 가스에 의하여 스토리지 베셀(114)에 저장되어 있는 HMDSO(113)가 버블링되면서 버블링가스주입라인(115)을 통하여 버블링가스분사관(116)으로 공급이되어 가스분사홀(116a)들을 통하여 공정 챔버(101)의 내측을 이동하는 소재(106)의 상,하측에 균일하게 분사되어 진다.In such a state, when the valve 118 installed on the gas supply line 112 is opened, the He gas, which is the carrier gas stored in the gas storage container 111, is supplied to the storage vessel 114, and thus supplied. The HMDSO 113 stored in the storage vessel 114 is bubbled by the carrier gas, and is supplied to the bubbling gas injection pipe 116 through the bubbling gas injection line 115 to supply the gas injection hole 116a. It is uniformly sprayed on the upper and lower sides of the material 106 to move the inside of the process chamber 101 through the.
또한, 반응촉진가스분사관(122)에 연결된 가스공급라인(121) 상에 설치된 밸브(124)도 열어서 반응촉진가스인 He가스가 반응촉진가스분사관(122)으로 공급되도록 하고, 그와 같이 공급된 He가스는 분사홀(122a)을 통하여 공정 챔버(101)의 내부로 이동하는 소재(106)의 상,하측에 균일하게 분사되어 진다.In addition, the valve 124 installed on the gas supply line 121 connected to the reaction promoting gas injection pipe 122 is also opened so that He gas, which is the reaction promoting gas, is supplied to the reaction promoting gas injection pipe 122. The supplied He gas is uniformly sprayed on the upper and lower sides of the material 106 moving into the process chamber 101 through the injection hole 122a.
그리고, 상기와 같이 버블링된 HMDSO(113)와 반응촉진가스가 1:1~1:5 정도의 적정비로 공정 챔버(101)의 내측으로 공급이 되는 상태에서 직류전원공급기에서 상부 전극(104)과 하부 전극(105)에 직류전원을 인가하면 상부 전극(104)과 하부 전극(105)의 사이에서 플라즈마가 발생이 되고, 그와 같이 발생되는 플라즈마에 의하여 가스가 여기되면서 연속적으로 이송하는 소재(106)의 표면에 내식성 박막의 증착이 이루어진다.In addition, the upper electrode 104 in the DC power supply in a state in which the bubbled HMDSO 113 and the reaction promoting gas are supplied into the process chamber 101 at an appropriate ratio of 1: 1 to 1: 5 as described above. When a direct current power source is applied to the lower electrode 105, a plasma is generated between the upper electrode 104 and the lower electrode 105, and gas is excited by the plasma generated as described above. The deposition of a corrosion resistant thin film on the surface of 106).
이상에서 상세히 설명한 바와 같이, 본 발명 플라즈마를 이용한 금속의 표면처리장치는 공정 챔버의 내부로 액체상태의 HMDSO를 버블링하여 주입함과 아울러 반응촉진가스를 별도의 라인을 통하여 공급함으로써, 버블링가스주입관의 내측에 버블링가스가 응축되지 않는 상태로 공정 챔버에 버블링가스가 균일하게 주입되고, 반응촉진가스도 적정비로 공정 챔버의 내부에 균일하게 공급되어짐에 따라 균일하고 재현성있는 증착작업이 이루어지는 효과가 있다.As described in detail above, the metal surface treatment apparatus using the plasma of the present invention bubbling and injecting liquid HMDSO into the process chamber and supplying the reaction promoting gas through a separate line, the bubbling gas As the bubbling gas is uniformly injected into the process chamber while the bubbling gas is not condensed inside the injection tube, and the reaction promoting gas is uniformly supplied to the inside of the process chamber at an appropriate ratio, a uniform and reproducible deposition operation is performed. It has an effect.
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| JPH03143930A (en) * | 1989-10-30 | 1991-06-19 | Bridgestone Corp | Method and apparatus for continuous surface treatment of sheet |
| JPH03264676A (en) * | 1990-03-13 | 1991-11-25 | Canon Inc | Continuous deposited film forming device |
| KR20010018714A (en) * | 1999-08-21 | 2001-03-15 | 구자홍 | An apparatus for forming polymer continuously on the surface of metal by dc plasma polymerization |
| KR20010088068A (en) * | 2000-03-10 | 2001-09-26 | 구자홍 | Plasma polymerizing apparatus having gas injection line |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH03143930A (en) * | 1989-10-30 | 1991-06-19 | Bridgestone Corp | Method and apparatus for continuous surface treatment of sheet |
| JPH03264676A (en) * | 1990-03-13 | 1991-11-25 | Canon Inc | Continuous deposited film forming device |
| KR20010018714A (en) * | 1999-08-21 | 2001-03-15 | 구자홍 | An apparatus for forming polymer continuously on the surface of metal by dc plasma polymerization |
| KR20010088068A (en) * | 2000-03-10 | 2001-09-26 | 구자홍 | Plasma polymerizing apparatus having gas injection line |
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