KR100438945B1 - Surface treatment apparatus of metal using plasma - Google Patents
Surface treatment apparatus of metal using plasma Download PDFInfo
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- KR100438945B1 KR100438945B1 KR10-2001-0063129A KR20010063129A KR100438945B1 KR 100438945 B1 KR100438945 B1 KR 100438945B1 KR 20010063129 A KR20010063129 A KR 20010063129A KR 100438945 B1 KR100438945 B1 KR 100438945B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
Abstract
본 발명은 플라즈마를 이용한 금속의 표면처리장치는 공정 챔버(101)의 하부 일측에 HMDSO(110)가 저장되어 있는 스토리지 베셀(111)과 캐리어 가스가 저장되어 있는 가스저장용기(113)가 설치되어 있고, 상기 스토리지 베셀(111)과 공정 챔버(101)를 연결하는 연결라인(112) 상에 히터(115)가 설치되어 있어서, 가스저장용기(113)에서 공급되는 캐리어 가스에 의하여 스토리지 베셀(111)에 저장되어 있는 HMDSO(110)가 버블링되어 공정 챔버(101)로 공급될때에 코일 히터(115)를 가열하여 연결라인(112)의 내부를 30~100℃가 되도록 유지함으로써, 연결라인(112)의 내측면에 HMDSO(110)가 증착되는 것을 방지하고, 따라서 일정하게 HMDSO(110)가 공급되어지게 되어 시료(104)에 증착막이 균일하게 증착되어 진다.In the present invention, the surface treatment apparatus for metal using plasma includes a storage vessel 111 in which the HMDSO 110 is stored and a gas storage container 113 in which a carrier gas is stored at one lower side of the process chamber 101. The heater 115 is installed on the connection line 112 connecting the storage vessel 111 and the process chamber 101 to the storage vessel 111 by a carrier gas supplied from the gas storage container 113. When the HMDSO 110 stored in the bubbling is supplied to the process chamber 101 by heating the coil heater 115 to maintain the inside of the connection line 112 to 30 ~ 100 ℃, connection line ( The HMDSO 110 is prevented from being deposited on the inner side of the 112, so that the HMDSO 110 is constantly supplied so that the deposition film is uniformly deposited on the sample 104.
Description
본 발명은 플라즈마를 이용한 금속의 표면처리장치에 관한 것으로, 특히 액체 상태의 도금물질을 공정 챔버의 내부로 주입하기 위하여 설치된 주입관의 내벽에 도금물질이 부착되는 것을 방지할 수 있도록 한 플라즈마를 이용한 금속의 표면처리장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for treating a metal surface using plasma, and in particular, using a plasma to prevent the plating material from adhering to an inner wall of an injection tube provided for injecting a liquid plating material into the process chamber. A surface treatment apparatus for metals.
통상적으로 에어컨의 실외기는 케이스의 내부에 열교환기가 설치되어 있고, 그 열교환기는 스테인레스 재질의 지지대와 알루미늄 재질의 방열핀 및 동 파이프로 구성되어 있다.Typically, the outdoor unit of the air conditioner is provided with a heat exchanger inside the case, the heat exchanger is composed of a stainless steel support, aluminum radiating fins and copper pipes.
상기와 같이 구성되는 에어컨 실외기는 옥외에 주로 설치되기 때문에 빗물이나 바람에 많이 노출되므로 부식에 잘 견디며 열교환능력이 우수한 재질을 선택하여 제작되어 진다.Since the outdoor unit of the air conditioner configured as described above is mainly installed outdoors, it is exposed to rainwater or wind, so it is manufactured by selecting a material that resists corrosion well and has excellent heat exchange ability.
그러나, 상기와 같은 통상적인 에어컨이 부식에 잘 견디는 재질로 되어 있음에도 불구하고, 서남아시아나 동남아시아의 해안가와 같이 고온다습하고 염분이 많은 지역의 외부에 설치되는 경우에 실외기용 열교환기의 방열핀들이 쉽게 부식되는 문제점이 있었다.However, even though the conventional air conditioner is made of a material that resists corrosion well, the heat radiation fins of the outdoor unit heat exchanger are easily corroded when installed outside the high temperature, high humidity and salty areas, such as the coasts of Southwest Asia and Southeast Asia. There was a problem.
이러한 점을 개선하고자 기후가 악조건인 곳에 설치되는 에어컨의 실외기들은 열교환기의 방열핀들을 제작할때에 표면에 Cr도금을 하여 내부식처리를 하게 되는데, 그와 같이 도금처리를 하는 경우에 어느정도 사용수명이 증가되어 개선이 되었다고 볼 수 있으나, 사용자들이 만족할 만큼 충분한 내부식성을 갖지 못하여 일정 기간이 지나면 부식에 의한 소손이 발생되는 문제점이 있었다.In order to improve this point, outdoor units of air conditioners installed in bad weather conditions are subjected to corrosion treatment by plating Cr on the surface when heat sinks of heat exchanger are manufactured. It can be seen that the improvement has been improved, but the user does not have enough corrosion resistance to satisfy the problem that the burnout caused by corrosion after a certain period of time.
상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 소재의 표면에 절연성의 내부식물질을 균일하게 증착시켜서 내부식성을 증대시키도록 하는데 적합한 플라즈마를 이용한 금속의 표면처리장치를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention devised in view of the above problems is to provide a metal surface treatment apparatus using plasma suitable for uniformly depositing an insulating corrosion resistant material on a surface of a material to increase corrosion resistance.
도 1은 본 발명의 플라즈마를 이용한 금속의 표면처리장치를 보인 개략구성도.1 is a schematic configuration diagram showing a surface treatment apparatus of a metal using a plasma of the present invention.
도 2는 본 발명의 요부구성을 보인 사시도.Figure 2 is a perspective view showing the main portion of the present invention.
** 도면의 주요 부분에 대한 부호의 설명 **** Description of symbols for the main parts of the drawing **
101 : 공정 챔버 102 : 상부 전극101: process chamber 102: upper electrode
103 : 하부 전극 104 : 시료103: lower electrode 104: sample
105 : 언 와인더 107 : 와인더105: unwinder 107: winder
110 : HMDSO 111 : 스토리지 베셀110: HMDSO 111: storage vessel
112 : 연결라인 113 : 가스저장용기112: connection line 113: gas storage container
114 : 가스공급라인 115 : 코일 히터114: gas supply line 115: coil heater
130 : 파워 서플라이130: power supply
상기와 같은 본 발명의 목적을 달성하기 위하여내부에 일정공간부를 가지는 공정 챔버와,그 공정 챔버의 내부 상,하측에 일정간격을 두고 고정되며 공급되는 전원에 의하여 플라즈마를 발생시키기 위한 상,하부 전극과,상기 공정 챔버의 일측에 배치되어 공정 챔버의 입구부를 통하여 내측의 상,하부 전극 사이로 시트상태의 시료를 공급하기 위한 언와인더와,상기 공정 챔버의 타측에 배치되어 공정 챔버의 배출구를 통하여 배출되는 시트상태의 시료를 감기 위한 와인더와,상기 공정 챔버의 하부 일측에 설치되어 연결라인을 통하여 공정 챔버의 내부로 공급되는 HMDSO를 저장하기 위한 스토리지 베셀과,그 스토리지 베셀에 가스공급라인을 통하여 HMDSO를 버블링시키기 위한 캐리어 가스를 공급하기 위한 가스저장용기와,상기 공정 챔버의 하부 타측에 설치되어 배기라인을 통하여 배기가스를 배출함과 아울러 공정 챔버의 내부 압력을 일정 압력으로 조절하기 위한 펌프 및In order to achieve the object of the present invention as described above, a process chamber having a predetermined space therein, and the upper and lower electrodes for generating a plasma by the power supplied and fixed at a predetermined interval inside and below the process chamber And an unwinder disposed at one side of the process chamber and configured to supply a sample in a sheet state between upper and lower electrodes inside the process chamber through an inlet of the process chamber, and disposed at the other side of the process chamber through an outlet of the process chamber. A winder for winding the discharged sheet state sample, a storage vessel for storing HMDSO which is installed at a lower side of the process chamber and supplied into the process chamber through a connection line, and a gas supply line for the storage vessel A gas storage container for supplying a carrier gas for bubbling the HMDSO through, To the other bottom of the process chamber Value is also discharge the exhaust gas through the exhaust line and a well pump and for adjusting the internal pressure of the process chamber to a predetermined pressure
상기 스토리지 베셀과 공정 챔버를 연결하는 연결라인을 감싸도록 설치되어 버블링되어 공급되는 HMDSO가 연결라인의 내측에 응축되어 부착되지 않도록 가열하기 위한 코일 히터를 포함하여서 구성되는 것을 특징으로 하는 플라즈마를 이용한 금속의 표면처리장치가 제공된다.It is installed to surround the connection line connecting the storage vessel and the process chamber bubbling HMDSO is supplied by the plasma heater, characterized in that it comprises a coil heater for heating so as not to be condensed and attached to the inside of the connection line A metal surface treatment apparatus is provided.
이하, 상기와 같이 구성되는 본 발명 플라즈마를 이용한 금속의 표면처리장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings, the surface treatment apparatus of the metal using the present invention plasma configured as described above in more detail as follows.
도 1은 본 발명의 플라즈마를 이용한 금속의 표면처리장치를 보인 개략구성도이고, 도 2는 본 발명의 요부구성을 보인 사시도이다.1 is a schematic configuration diagram showing a metal surface treatment apparatus using a plasma of the present invention, Figure 2 is a perspective view showing the main configuration of the present invention.
도시된 바와 같이, 본 발명 플라즈마를 이용한 금속의 표면처리장치는 박스체인 공정 챔버(101)의 내측 상부에 상부 전극(102)이 고정되어 있고, 그 상부 전극(102)의 하측에 하부 전극(103)이 고정되어 있다.As shown, in the surface treatment apparatus of the metal using the plasma of the present invention, the upper electrode 102 is fixed to the upper inside of the process chamber 101 of the box chain, and the lower electrode 103 is disposed below the upper electrode 102. ) Is fixed.
그리고, 상기 공정 챔버(101)의 일측에는 공정 챔버(101)의 내부로 공급하기 위한 시트 상태의 시료(104)가 감겨져 있는 언 와인더(105)가 언 와인더 챔버(106)의 내부에 배치되어 있고, 타측에는 공정 챔버(101)에서 배출되는 시료(104)를 감기 위한 와인더(107)가 언 와인더 챔버(108)의 내부에 배치되어 있으며, 상기 언 와인더 챔버(105)의 출구부와 와인더 챔버(108)의 입구부에는 시료(104)의 이동을 안내하는 한쌍의 가이드 롤러(109)가 설치되어 있다.In addition, on one side of the process chamber 101, an unwinder 105, on which a sample 104 in a sheet state for supplying the inside of the process chamber 101, is wound, is disposed inside the unwinder chamber 106. On the other side, a winder 107 for winding the sample 104 discharged from the process chamber 101 is disposed inside the unwinder chamber 108, and an outlet of the unwinder chamber 105 is provided. A pair of guide rollers 109 for guiding the movement of the sample 104 are provided at the portion and the inlet of the winder chamber 108.
또한, 상기 공정 챔버(101)의 하부 일측에는 액체상태의 HMDSO(Hexamethyldisiloxane, (CH3)3SiOSi(CH3)3)(110)가 저장되어 있는 스토리지 베셀(Storage Vessel)(111)이 공정 챔버(101)에 연결라인(112)으로 연결되도록 설치되어 있고, 그 스토리지 베셀(111)은 HMDSO(110)를 버블링하기 위한 캐리어 가스(Carrier Gas)가 저장되는 가스저장용기(113)에 가스공급라인(114)으로 연결되어 있으며, 상기 연결라인(112)에는 연결라인(112)으로 흐르는 HMDSO(110)가 내측면에 부착되지 않도록 가열하기 위한 코일 히터(115)가 감겨져 있다.In addition, a storage vessel 111 in which a liquid hexamethyldisiloxane (CH 3 ) 3 SiOSi (CH 3 ) 3 ) 110 is stored at a lower side of the process chamber 101 is a process chamber. It is installed to be connected to the connection line 112 to the 101, the storage vessel 111 is supplied gas to the gas storage container 113 is stored a carrier gas (Carrier Gas) for bubbling the HMDSO (110) It is connected to the line 114, the coil heater 115 is wound around the connection line 112 for heating so that the HMDSO 110 flowing through the connection line 112 is not attached to the inner side.
상기 캐리어 가스로는 Ar, O2, N2와 같은 비반응가스가 사용되며, 스토리지 베셀(111)에 공급되어 저장되어 있는 HMDSO(110)을 버블링하여 공정 챔버(101)로 공급하게 된다.As the carrier gas, non-reactive gases such as Ar, O 2 , and N 2 are used, and the HMDSO 110, which is supplied to and stored in the storage vessel 111, is bubbled and supplied to the process chamber 101.
상기 가스공급라인(114) 상에는 가스의 흐르는 양을 조절하기 위한 유량조절기(116)와, 가스공급라인(114)의 개,폐를 위한 밸브(117)가 설치되어 있다.On the gas supply line 114, a flow controller 116 for adjusting the flow amount of gas and a valve 117 for opening and closing the gas supply line 114 are provided.
그리고, 상기 공정 챔버(101)의 하부 타측에는 배기가스를 배출하기 위한 배기라인(121)이 설치되어 있고, 그 배기라인(121) 상에는 공정 챔버(101)의 내부 압력을 조절하기 위한 펌프(Pump)(122)가 설치되어 있다.In addition, an exhaust line 121 for discharging the exhaust gas is installed at the lower side of the process chamber 101, and a pump for adjusting the internal pressure of the process chamber 101 is disposed on the exhaust line 121. (122) is installed.
한편, 도면에는 도시되지 않았으나 상부 전극(102)과 하부 전극(103)에 직류전원을 공급하기 위한 직류전원공급기(미도시)와, 언 와인더(105)와 와인더(107)을 회전시키기 위한 모터(미도시)가 구비되어 있다.Although not shown in the drawings, a DC power supply (not shown) for supplying DC power to the upper electrode 102 and the lower electrode 103, and an unwinder 105 and a winder 107 for rotating the DC power supply. A motor (not shown) is provided.
그리고, 도 2에 도시된 바와 같이, 상기 연결라인(112)에 감겨져 있는 히터(115)는 파워 서플라이(Power Supply)(130)에서 전원이 공급되도록 되어 있다.As shown in FIG. 2, the heater 115 wound around the connection line 112 is configured to supply power from the power supply 130.
상기와 같이 구성되어 있는 본 발명 플라즈마를 이용한 금속의 표면처리장치에서 시트 상태의 시료(104)에 내부식막을 증착하는 동작을 설명하면 다음과 같다.Referring to the operation of depositing a corrosion resistant film on the sample 104 in the sheet state in the surface treatment apparatus of the metal using the plasma of the present invention configured as described above are as follows.
전원이 인가되어 언 와인더(105)가 시계반대방향으로 회전을 하고, 와인더(107)가 시계방향으로 회전을 하면 언 와인더(105)에 감겨있던 시트 상태의 시료(104)가 공정 챔버(101)의 내부에 설치된 상부 전극(102)과 하부 전극(103)의 사이를 통과하여 와인더(107)에 연속적으로 감기게 된다.When the power is applied, the unwinder 105 rotates in the counterclockwise direction, and when the winder 107 rotates in the clockwise direction, the sample 104 in the sheet state wound on the unwinder 105 is processed in the process chamber. Passed between the upper electrode 102 and the lower electrode 103 provided inside the 101 is wound on the winder 107 continuously.
그와 같은 상태에서 가스공급라인(114) 상에 설치된 밸브(117)를 열면 가스저장용기(113)에서 저장되어 있던 캐리어 가스가 스토리지 베셀(111)로 공급이 되고, 그와 같이 공급되는 캐리어 가스에 의하여 스토리지 베셀(111)에 저장되어 있는 HMDSO(110)가 버블링되면서 연결라인(112)을 통하여 공정 챔버(101)의 내부로 공급되어 진다.In such a state, when the valve 117 installed on the gas supply line 114 is opened, the carrier gas stored in the gas storage container 113 is supplied to the storage vessel 111, and the carrier gas supplied as such is supplied. The HMDSO 110 stored in the storage vessel 111 is bubbling and is supplied into the process chamber 101 through the connection line 112.
그리고, 상기와 같이 HMDSO(110)가 공정 챔버(101)로 공급이 되면 직류전원공급기에서 상부 전극(102)과 하부 전극(103)에 직류전원을 인가하면 상부 전극(102)과 하부 전극(103)의 사이에서 플라즈마가 발생이 되고, 그와 같이 발생되는 플라즈마에 의하여 공정 가스가 여기되면서 연속적으로 이송하는 시료(104)의 표면에 증착이 이루어진다.When the HMDSO 110 is supplied to the process chamber 101 as described above, when the DC power is applied to the upper electrode 102 and the lower electrode 103 by the DC power supply, the upper electrode 102 and the lower electrode 103 are applied. Plasma is generated between and, and vapor deposition is performed on the surface of the sample 104 continuously transported while the process gas is excited by the generated plasma.
또한, 배기라인(121)에 설치되어 있는 펌프(122)는 펌핑을 하여 공정 챔버(101)의 내부에서 반응을 하고난 후의 배기가스를 외부로 배출함과 아울러 공정 챔버(101)의 내부를 일정압력으로 유지하게 된다.In addition, the pump 122 installed in the exhaust line 121 pumps the exhaust gas after the reaction in the interior of the process chamber 101 to the outside, and the inside of the process chamber 101 is fixed. To maintain pressure.
그리고, 상기와 같이 증착작업이 이루어지는 동안 버블링된 HMDSO(110)는 연결라인(112)을 통하여 공정 챔버(101)의 내측으로 계속 공급되어 지는데, 연결라인(112)에 감겨진 코일 히터(115)는 파워 서플라이(130)에서 공급되는 전원에 의하여 가열되어 연결라인(112)의 내측이 30~100℃가 되도록 유지함으로써 연결라인(112)의 내측에 HMDSO(110)가 증착되는 것을 방지하게 된다.In addition, the bubbled HMDSO 110 is continuously supplied into the process chamber 101 through the connection line 112 while the deposition operation is performed as described above, and the coil heater 115 wound on the connection line 112. ) Is heated by the power supplied from the power supply 130 to maintain the inside of the connection line 112 to 30 ~ 100 ℃ to prevent the HMDSO 110 is deposited on the inside of the connection line 112. .
이상에서 상세히 설명한 바와 같이, 본 발명 플라즈마를 이용한 금속의 표면처리장치는 가스저장용기에서 공급되는 캐리어 가스에 의하여 스토리지 베셀에 저장되어 있는 HMDSO가 버블링되어 공정 챔버로 공급이되도록 하고, 그 버블링된 가스가 공급되는 연결라인에 코일 히터를 설치하여 공급되는 HMDSO가 연결라인의 내측면에 증착되지 않도록 가열함으로써, 공정 챔버의 내부로 HMDSO가 균일하게 공급되어 지게 되어 균일한 증착작업이 이루어지게 된다.As described in detail above, in the surface treatment apparatus of the metal using the plasma of the present invention, the HMDSO stored in the storage vessel is bubbled by the carrier gas supplied from the gas storage container to be supplied to the process chamber, and the bubbling is performed. By installing a coil heater on the connection line to which the supplied gas is supplied, the HMDSO supplied is heated so as not to be deposited on the inner side of the connection line, so that the HMDSO is uniformly supplied into the process chamber, thereby achieving uniform deposition. .
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6328439A (en) * | 1986-07-18 | 1988-02-06 | Nippon Kokan Kk <Nkk> | Gas feeder |
| KR20010018714A (en) * | 1999-08-21 | 2001-03-15 | 구자홍 | An apparatus for forming polymer continuously on the surface of metal by dc plasma polymerization |
| KR100827575B1 (en) * | 2002-04-15 | 2008-05-07 | 미쓰비시덴키 가부시키가이샤 | Liquid crystal display device and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6328439A (en) * | 1986-07-18 | 1988-02-06 | Nippon Kokan Kk <Nkk> | Gas feeder |
| KR20010018714A (en) * | 1999-08-21 | 2001-03-15 | 구자홍 | An apparatus for forming polymer continuously on the surface of metal by dc plasma polymerization |
| KR100827575B1 (en) * | 2002-04-15 | 2008-05-07 | 미쓰비시덴키 가부시키가이샤 | Liquid crystal display device and method for manufacturing the same |
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