JP2001262353A - Method and system for chemical vapor deposition(cvd) - Google Patents
Method and system for chemical vapor deposition(cvd)Info
- Publication number
- JP2001262353A JP2001262353A JP2000071187A JP2000071187A JP2001262353A JP 2001262353 A JP2001262353 A JP 2001262353A JP 2000071187 A JP2000071187 A JP 2000071187A JP 2000071187 A JP2000071187 A JP 2000071187A JP 2001262353 A JP2001262353 A JP 2001262353A
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- Prior art keywords
- gas
- substrate
- chemical vapor
- vapor deposition
- source gas
- Prior art date
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- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板の上に所望の
材料物質を堆積させ、板状の材料を形成する化学気相成
長（ＣＶＤ）方法及びその実施に使用する化学気相成長
装置に関し、特に高純度カーボン等の基板の上にＳｉＣ
を堆積させ、板状の自立性ＳｉＣ材を形成する化学気相
成長方法及びその実施に使用する化学気相成長装置に関
する。[0001] 1. Field of the Invention [0002] The present invention relates to a chemical vapor deposition (CVD) method for depositing a desired material on a substrate to form a plate-like material, and a chemical vapor deposition apparatus used for carrying out the method. , Especially on a substrate of high purity carbon etc.
And a chemical vapor deposition apparatus used to carry out the method.
【０００２】[0002]
【従来の技術】従来、化学気相成長方法により成長させ
たＳｉＣ材は半導体製造装置の部材に、耐食性及び高純
度性を付加するために、高純度カーボン等の基板表面の
被覆材として使用されてきた（特開昭６２−１４５７２
６号、特開平８−３１９１８６号、特開平１０−０９７
９６０号公報）。これらは、高温腐食性雰囲気で使用さ
れることが多く、ＳｉＣ材にピンホールが形成された場
合、これを被覆した部材は使用不能となる。即ち、被覆
材におけるピンホールの発生が、被覆された部材の寿命
を決定する。近年、化学気相成長方法によるＳｉＣの自
立体であって、ピンホールの発生が起こり得ないものを
製造する技術が提案されている。これは、基板を所定の
形状に成形し、その基板上に自立可能な厚さの層を形成
した後、基板を除去することによってＣＶＤ−ＳｉＣ構
造体を製造するものである（特開平６−２０６７１８
号、特開平５−０９０１８４号、特開平１０−１２５６
３号、特許第２５９３２８７号公報）。これらは、ピン
ホールの発生による基板の露出がないので、ピンホール
の発生により部材の寿命が影響を受けることがない。2. Description of the Related Art Conventionally, a SiC material grown by a chemical vapor deposition method has been used as a coating material on a substrate surface such as high-purity carbon in order to add corrosion resistance and high purity to a member of a semiconductor manufacturing apparatus. (Japanese Patent Application Laid-Open No. Sho 62-14572)
6, JP-A-8-319186, JP-A-10-097
960). These are often used in a high-temperature corrosive atmosphere, and when a pinhole is formed in the SiC material, the member covering the pinhole becomes unusable. That is, the occurrence of pinholes in the coating material determines the life of the coated member. In recent years, there has been proposed a technique for manufacturing a self-solid of SiC by a chemical vapor deposition method, in which pinholes cannot occur. This is to manufacture a CVD-SiC structure by forming a substrate into a predetermined shape, forming a self-supporting layer on the substrate, and then removing the substrate (Japanese Unexamined Patent Publication No. Hei 6-1994). 206718
JP-A-5-090184, JP-A-10-1256
No. 3, Japanese Patent No. 2593287). In these, since the substrate is not exposed due to the generation of the pinhole, the life of the member is not affected by the generation of the pinhole.
【０００３】[0003]
【発明が解決しようとする課題】上述のＣＶＤ−ＳｉＣ
自立体の製造においては、ＳｉＣ層の堆積速度が遅く、
生産性が低かった。従って、製造コストが高く、高価格
であっても用いられ得る特定の用途にのみ適用されてい
た。特許第２５９３２８７号公報に開示された発明は、
正三角柱状の化学蒸着用セルを備えており、同じ容積の
蒸着域に対してより高い原料ガス利用効率を与えるもの
であるが、生産性の向上は不十分であり、ＣＶＤ−Ｓｉ
Ｃ構造体の製造コストが依然として高いという問題があ
った。The above-mentioned CVD-SiC
In the production of self-solids, the deposition rate of the SiC layer is low,
Productivity was low. Therefore, it has been applied only to a specific application that can be used even if the production cost is high and the price is high. The invention disclosed in Japanese Patent No. 2593287,
It has a cell for chemical vapor deposition in the form of a regular triangular prism and gives higher source gas utilization efficiency to the vapor deposition region of the same volume, but the productivity is insufficiently improved and the CVD-Si
There was a problem that the manufacturing cost of the C structure was still high.
【０００４】化学気相成長方法による堆積層の堆積速度
を決定する因子には、原料ガスの分解反応又は成長面へ
の固相の堆積反応等の反応速度、及び成長面への原料ガ
スの拡散速度等がある。上述の反応速度は、化学気相成
長の成長温度を上昇させることによって高くなることが
知られている。しかし、反応温度の上昇は、堆積層の組
成及び組織等の条件により制限される。また、反応温度
の上昇は、化学気相成長装置の機構上の限界によっても
制限される。原料ガスの拡散速度は、反応チャンバ内の
ガスの流速を高めることによって高めることができる
が、大量の原料ガス又はキャリアガスを消費する必要が
あり、製造コスト的に不利である。Factors that determine the deposition rate of a deposited layer by the chemical vapor deposition method include a reaction rate such as a decomposition reaction of a source gas or a deposition reaction of a solid phase on a growth surface, and a diffusion of a source gas to a growth surface. There is speed etc. It is known that the above reaction rate is increased by increasing the growth temperature of chemical vapor deposition. However, the rise in reaction temperature is limited by conditions such as the composition and structure of the deposited layer. The rise in reaction temperature is also limited by the mechanical limitations of the chemical vapor deposition apparatus. The diffusion rate of the source gas can be increased by increasing the flow rate of the gas in the reaction chamber. However, a large amount of the source gas or the carrier gas needs to be consumed, which is disadvantageous in manufacturing cost.
【０００５】そのため、反応温度及びガス流速が制限さ
れた状態で、堆積速度を高めて材料を形成することがで
きる化学気相成長装置が望まれている。このような化学
気相成長装置として、水平式気相成長装置が提案されて
いる（McDonald Robinson and Lamonte H.Lawrence;Sem
iconductor Fabrication:Technology and Metrology,p3
0 （1989 ASTM ））。この気相成長装置においては、堆
積面が原料ガスの流れる方向と平行になるように基板を
配置してある。[0005] Therefore, there is a demand for a chemical vapor deposition apparatus capable of forming a material by increasing the deposition rate while limiting the reaction temperature and the gas flow rate. As such a chemical vapor deposition apparatus, a horizontal vapor deposition apparatus has been proposed (McDonald Robinson and Lamonte H. Lawrence; Sem
iconductor Fabrication: Technology and Metrology, p3
0 (1989 ASTM)). In this vapor phase growth apparatus, the substrate is arranged so that the deposition surface is parallel to the direction in which the source gas flows.
【０００６】本発明者は、上述の水平式気相成長装置に
種々の改良を加えることにより、以下の作用が生じるこ
とを見い出した。本発明は斯かる事情に鑑みてなされた
ものであり、本願の第１及び第５発明は、反応チャンバ
内に、原料ガスの流路を挟んで、平面を相対させて２枚
の基板を配置することにより、基板に材料層が堆積する
速度を向上させるとともに、生産性が向上する化学気相
成長方法及びその実施に使用する化学気相成長装置を提
供することを目的とする。The inventor of the present invention has found that the following effects occur by making various improvements to the above-mentioned horizontal vapor phase epitaxy apparatus. The present invention has been made in view of such circumstances, and the first and fifth inventions of the present application dispose two substrates in a reaction chamber with their planes opposed to each other across a flow path of a source gas. Accordingly, an object of the present invention is to provide a chemical vapor deposition method capable of improving the rate at which a material layer is deposited on a substrate and improving productivity, and a chemical vapor deposition apparatus used for carrying out the method.
【０００７】また、本願の第２発明は、２枚の基板の間
隔を、材料を形成させる部位の原料ガスの流れ方向長さ
の長い方の１〜１５％とすることにより、堆積効率が良
好であり、堆積速度が速い化学気相成長方法を提供する
ことを目的とする。そして、本願の第３発明は、平面を
鉛直方向と略一致させて基板を相対させることにより、
重力により熱対流が発生し、原料ガスの流れに乱れが生
じた場合においても２枚の材料の層厚を均一にすること
ができる化学気相成長方法を提供することを目的とす
る。本願の第４発明は、基板をその平面を通る軸を中心
に回転させることにより、原料ガスが基板の周方向に均
一に供給され、材料の層厚の均一性が向上する化学気相
成長方法を提供することを目的とする。In the second aspect of the present invention, the deposition efficiency is improved by setting the distance between the two substrates to be 1 to 15% of the longer length of the material gas in the direction of flow of the source gas. And an object of the present invention is to provide a chemical vapor deposition method having a high deposition rate. And the 3rd invention of this application makes a board | substrate oppose, making a plane substantially correspond with a perpendicular direction,
It is an object of the present invention to provide a chemical vapor deposition method capable of making the thicknesses of two materials uniform even when the convection occurs due to gravity and the flow of the source gas is disturbed. According to a fourth aspect of the present invention, there is provided a chemical vapor deposition method wherein a source gas is uniformly supplied in a circumferential direction of a substrate by rotating the substrate about an axis passing through the plane, thereby improving the uniformity of a material layer thickness. The purpose is to provide.
【０００８】さらに、本願の第６発明は、配置する２枚
の基板の間隔を調整可能にすることにより、形成する材
料の厚みに適した間隔を設定することができ、堆積した
材料層の厚みに対応させて基板の間隔を変え、原料ガス
の流路の幅を一定に保持することができる化学気相成長
装置を提供することを目的とする。そして、本願の第７
発明は、基板の周囲に、原料ガスがヒータに拡散するの
を防ぐための仕切り板を原料ガスの流路に対向させて配
置することにより、ヒータに材料層が堆積して加熱不良
が生じるのを防止することができる化学気相成長装置を
提供することを目的とする。Further, according to the sixth aspect of the present invention, the distance between the two substrates can be adjusted so that the distance suitable for the thickness of the material to be formed can be set, and the thickness of the deposited material layer can be adjusted. It is an object of the present invention to provide a chemical vapor deposition apparatus capable of changing the distance between substrates in accordance with the above-described method and keeping the width of the flow path of the source gas constant. And the seventh of the present application
According to the invention, a partition plate for preventing the source gas from diffusing into the heater is disposed around the substrate so as to face the flow path of the source gas, so that a material layer is deposited on the heater and heating failure occurs. It is an object of the present invention to provide a chemical vapor deposition apparatus that can prevent the occurrence of the chemical vapor deposition.
【０００９】また、本願の第８発明は、反応チャンバに
原料ガスを導入する複数のガス導入部を備え、各ガス導
入部から原料ガスの流量を互いに独立して制御すること
により、材料の層厚をさらに均一化することができる化
学気相成長装置を提供することを目的とする。本願の第
９発明は、反応チャンバに原料ガスを導入するノズルを
有したガス導入部を備え、ノズルの角度を変えることが
できるようにすることにより、２枚の材料の層厚をより
均一化することができる化学気相成長装置を提供するこ
とを目的とする。According to an eighth aspect of the present invention, a material layer is provided by providing a plurality of gas inlets for introducing a source gas into a reaction chamber and controlling the flow rate of the source gas from each gas inlet independently of each other. It is an object of the present invention to provide a chemical vapor deposition apparatus capable of further making the thickness uniform. The ninth invention of the present application provides a gas introduction section having a nozzle for introducing a source gas into the reaction chamber, and the angle of the nozzle can be changed to thereby make the layer thickness of the two materials more uniform. It is an object of the present invention to provide a chemical vapor deposition apparatus that can perform the chemical vapor deposition.
【００１０】[0010]
【課題を解決するための手段】第１発明に係る化学気相
成長方法は、反応チャンバ内に流される原料ガスの流路
に、平面を臨ませて基板を配置し、前記平面上に前記原
料ガスの反応生成物からなる材料を形成する化学気相成
長方法において、前記原料ガスの流路を挟んで、２枚の
基板を相対させて配置することを特徴とする。According to a first aspect of the present invention, there is provided a chemical vapor deposition method comprising: arranging a substrate with a flat surface facing a flow path of a raw material gas flowing into a reaction chamber; In a chemical vapor deposition method for forming a material composed of a reaction product of a gas, two substrates are arranged so as to face each other with the flow path of the source gas interposed therebetween.
【００１１】第２発明に係る化学気相成長方法は、第１
発明において、前記基板の間隔を、原料ガスの反応生成
物からなる材料を形成させる部位の前記原料ガスの流れ
方向長さの１〜１５％とすることを特徴とする。ここ
で、「原料ガスの反応生成物からなる材料を形成させる
部位の原料ガスの流れ方向長さ」とは、基板上のみに限
定されず、例えば、第７発明の仕切り板にも「材料形
成」される場合は、その部分も含めての長さを意味す
る。また、相対する部位の前記長さが異なる場合は、そ
れらのうちの長い方の長さを意味する。[0011] The chemical vapor deposition method according to the second aspect of the present invention is directed to the first method.
The invention is characterized in that the distance between the substrates is 1 to 15% of the length in the flow direction of the source gas at a portion where a material made of a reaction product of the source gas is formed. Here, the “length in the flow direction of the raw material gas at the portion where the material formed of the reaction product of the raw material gas is formed” is not limited to only on the substrate. "" Means the length including that part. Further, when the lengths of the opposing portions are different, it means the longer one of them.
【００１２】第３発明に係る化学気相成長方法は、第１
又は第２発明において、平面を鉛直方向と略一致させて
前記基板を相対させることを特徴とする。According to a third aspect of the present invention, there is provided a chemical vapor deposition method comprising:
Alternatively, in the second invention, the substrate is made to face the plane so that the plane substantially coincides with the vertical direction.
【００１３】第４発明に係る化学気相成長方法は、第１
乃至第３のいずれかの発明において、前記基板をその平
面を通る軸を中心に回転させることを特徴とする。A chemical vapor deposition method according to a fourth aspect of the present invention is characterized in that
In any one of the third to third inventions, the substrate is rotated about an axis passing through the plane.
【００１４】第５発明に係る化学気相成長装置は、反応
チャンバ内に流される原料ガスの流路に、平面を臨ませ
て基板を配置して、前記平面上に前記原料ガスの反応生
成物からなる材料を形成すべくなしてある化学気相成長
装置において、前記原料ガスの流路を挟んで、２枚の基
板を相対させて配置すべくなしてあり、２枚の基板を加
熱するヒータを設けたことを特徴とする。According to a fifth aspect of the present invention, there is provided a chemical vapor deposition apparatus wherein a substrate is disposed with a flat surface facing a flow path of a raw material gas flowing into a reaction chamber, and a reaction product of the raw material gas is formed on the flat surface. And a heater for heating the two substrates, wherein the two substrates are arranged to face each other with the flow path of the source gas therebetween. Is provided.
【００１５】第６発明に係る化学気相成長装置は、第５
発明において、配置する２枚の基板の間隔を調整可能に
なしてあることを特徴とする。According to a sixth aspect of the present invention, there is provided a chemical vapor deposition apparatus comprising:
In the invention, the distance between the two substrates to be arranged can be adjusted.
【００１６】第７発明に係る化学気相成長装置は、第５
又は第６発明において、配置する基板の周囲に、前記原
料ガスが前記ヒータに拡散するのを防ぐための仕切り板
を前記原料ガスの流路に対向させて配置してあることを
特徴とする。According to a seventh aspect of the present invention, there is provided a chemical vapor deposition apparatus comprising:
Alternatively, in the sixth invention, a partition plate for preventing the source gas from diffusing into the heater is disposed around the substrate to be disposed, facing the flow path of the source gas.
【００１７】第８発明に係る化学気相成長装置は、第５
乃至第７発明のいずれかにおいて、前記反応チャンバに
前記原料ガスを導入する複数のガス導入部を備え、各ガ
ス導入部から原料ガスの流量を互いに独立して制御すべ
くなしてあることを特徴とする。[0017] The chemical vapor deposition apparatus according to the eighth invention has a fifth aspect.
In any one of the seventh to seventh inventions, a plurality of gas inlets for introducing the source gas into the reaction chamber are provided, and the flow rates of the source gas from each gas inlet are controlled independently of each other. And
【００１８】第９発明に係る化学気相成長装置は、第５
乃至第８発明のいずれかにおいて、前記反応チャンバに
前記原料ガスを導入するノズルを有したガス導入部を備
え、前記ノズルの角度を変更可能になしてあることを特
徴とする。The ninth aspect of the present invention is directed to a chemical vapor deposition apparatus according to the ninth aspect.
In any one of the eighth to eighth inventions, a gas introduction unit having a nozzle for introducing the source gas into the reaction chamber is provided, and the angle of the nozzle can be changed.
【００１９】第１及び第５発明においては、反応チャン
バ内に、原料ガスの流路を挟んで、平面を相対させて基
板を配置しており、材料層の堆積速度が効果的に高くな
る原料ガス流れ空間を実現するとともに、一度に２枚の
材料を形成するので生産性が向上する。According to the first and fifth aspects of the present invention, the substrates are arranged in the reaction chamber so that the substrates face each other with the flow path of the source gas therebetween, and the deposition rate of the material layer is effectively increased. A gas flow space is realized, and productivity is improved because two materials are formed at a time.
【００２０】第２発明においては、２枚の基板の間隔
を、材料を形成させる部位の原料ガスの流れ方向長さの
１〜１５％にしているので、堆積効率が良好であり、堆
積速度が速い。この２枚の基板の間隔が上記長さの１％
未満である場合には、原料ガスの流路の上流における堆
積が促進され過ぎ、原料ガスが上流で枯渇するので、全
体的な堆積効率が下がる。そして、２枚の基板の間隔が
上記長さの１５％より大きい場合には、堆積速度が遅く
なるので、２枚の基板の間隔は上記長さの１〜１５％で
あるのが好ましい。材料の堆積の進行に伴い、ガス流路
が狭まって層厚の均一性が低下したり、ガスが十分に流
れなくなるので、２枚の基板の間隔は、形成する材料の
層厚を考慮して設定する。In the second invention, the interval between the two substrates is set to 1 to 15% of the length of the material gas in the flow direction of the material gas, so that the deposition efficiency is good and the deposition rate is high. fast. The distance between these two substrates is 1% of the above length
If it is less than 1, the deposition of the source gas upstream of the flow path is excessively promoted, and the source gas is depleted upstream, thereby lowering the overall deposition efficiency. If the distance between the two substrates is larger than 15% of the above length, the deposition rate becomes slow. Therefore, the distance between the two substrates is preferably 1 to 15% of the above length. As the deposition of the material progresses, the gas flow path narrows, the uniformity of the layer thickness decreases, and the gas does not flow sufficiently. Therefore, the interval between the two substrates is determined in consideration of the layer thickness of the material to be formed. Set.
【００２１】第３発明においては、平面を鉛直方向と略
一致させて基板を相対させるので、重力により熱対流が
発生し、原料ガスの流れに乱れが生じた場合においても
２枚の材料の層厚を均一にすることができる。第４発明
においては、基板をその平面を通る軸を中心に回転させ
るので、原料ガスが基板の周方向に均一に供給され、材
料の層厚の均一性が向上する。In the third aspect of the invention, the substrates are opposed to each other with the plane substantially coincident with the vertical direction. Therefore, even when the convection is generated due to gravity and the flow of the raw material gas is disturbed, the two layers of the material are used. The thickness can be made uniform. In the fourth aspect, since the substrate is rotated about an axis passing through the plane, the source gas is supplied uniformly in the circumferential direction of the substrate, and the uniformity of the layer thickness of the material is improved.
【００２２】第６発明においては、配置する２枚の基板
の間隔を調整可能になしてあるので、形成する材料の厚
みに適した間隔を設定することができ、また、堆積した
材料層の厚みに対応させて基板の間隔を変えることによ
り、原料ガスの流路の幅を一定に保持することができ
る。第７発明においては、基板の周囲に、原料ガスがヒ
ータに拡散するのを防ぐための仕切り板を原料ガスの流
路に対向させて配置しているので、ヒータに材料層が堆
積して加熱不良が生じるのを防止することができる。In the sixth aspect, the distance between the two substrates to be arranged can be adjusted, so that the distance suitable for the thickness of the material to be formed can be set, and the thickness of the deposited material layer can be adjusted. The width of the flow path of the source gas can be kept constant by changing the distance between the substrates according to the above. In the seventh aspect, since the partition plate for preventing the source gas from diffusing to the heater is disposed around the substrate so as to face the flow path of the source gas, the material layer is deposited on the heater and heated. The occurrence of defects can be prevented.
【００２３】第８発明においては、反応チャンバに原料
ガスを導入する複数のガス導入部を備え、各ガス導入部
から原料ガスの流量を互いに独立して制御すべくなして
あるので、材料層の径方向の層厚に対応させて原料ガス
の供給量を変えることができ、材料の層厚をさらに均一
化することができる。第９発明においては、反応チャン
バに原料ガスを導入するノズルを有したガス導入部を備
え、ノズルの角度を変えることができるので、材料層の
層厚が薄い方の基板により多く原料ガスを供給し、２枚
の材料の層厚を均一化することができる。According to the eighth aspect of the present invention, the reaction chamber is provided with a plurality of gas introduction sections for introducing a source gas, and the flow rates of the source gases from the respective gas introduction sections are controlled independently of each other. The supply amount of the raw material gas can be changed according to the radial thickness, and the material thickness can be made more uniform. According to the ninth aspect, the gas supply section having the nozzle for introducing the source gas into the reaction chamber is provided, and the angle of the nozzle can be changed, so that the source gas is supplied more to the substrate having the thinner material layer. In addition, the thickness of the two materials can be made uniform.
【００２４】[0024]
【発明の実施の形態】以下、本発明をその実施の形態を
示す図面に基づいて具体的に説明する。 実施の形態１．図１は、本発明の実施の形態１に係る化
学気相成長装置を示す模式的断面図であり、図２は、図
１のII−II線による断面図である。図中５は反応管であ
る。ステンレス鋼製の反応管５は、長手方向を鉛直方向
に一致させて配置されており、水冷機構（図示せず）を
備えている。反応管５の下端にはガス導入部３が、上端
にはガス排出部４が設けられている。原料ガスはガス導
入部３から矢印の方向に流れ、ガス排出部４から排出さ
れる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments. Embodiment 1 FIG. FIG. 1 is a schematic sectional view showing a chemical vapor deposition apparatus according to Embodiment 1 of the present invention, and FIG. 2 is a sectional view taken along line II-II in FIG. In the figure, reference numeral 5 denotes a reaction tube. The reaction tube 5 made of stainless steel is arranged so that its longitudinal direction coincides with the vertical direction, and has a water cooling mechanism (not shown). A gas inlet 3 is provided at a lower end of the reaction tube 5, and a gas outlet 4 is provided at an upper end of the reaction tube 5. The source gas flows from the gas inlet 3 in the direction of the arrow, and is discharged from the gas outlet 4.
【００２５】この原料ガスの流路を挟み、円板状で同一
寸法を有した２枚の基板１が対向配置されている。基板
１には回転軸１１が取り付けられており、回転軸１１は
回転機構１２に固定されている。この回転機構１２によ
り基板１は回転し、原料ガスが基板１の周方向に均一に
供給されて、材料が周方向に均一に積層する。回転機構
１２は図示しない移動機構に接続されており、基板１，
１の間隔を調整することができるようになしてある。基
板１及び回転軸１１は高純度カーボン製であり、この実
施の形態においては一体物として成形されている。Two disk-shaped substrates 1 having the same dimensions are arranged to face each other with the flow path of the raw material gas therebetween. A rotating shaft 11 is attached to the substrate 1, and the rotating shaft 11 is fixed to a rotating mechanism 12. The substrate 1 is rotated by the rotation mechanism 12, the source gas is uniformly supplied in the circumferential direction of the substrate 1, and the materials are uniformly stacked in the circumferential direction. The rotating mechanism 12 is connected to a moving mechanism (not shown),
1 can be adjusted. The substrate 1 and the rotating shaft 11 are made of high-purity carbon, and are formed as a single body in this embodiment.
【００２６】反応管５の内壁と基板１との間には、基板
１を加熱するためのカーボン製のヒータ２が配置されて
おり、反応管５の内壁には、このヒータ２を包囲するよ
うに、断熱材７が設けられている。断熱材７は、ヒータ
２の背後に設けられた背後断熱材７１と、ヒータ２の側
方に設けられた側方断熱材７２と、ガス導入部３側に設
けられたガス導入部側断熱材７３と、ガス排出部４側に
設けられたガス排出部側断熱材７４とからなる。そし
て、ヒータ２の前方には、仕切り板６が設けられてい
る。仕切り板６の中央部には基板１より少し大径の穴６
ａが設けられており、この穴６ａに基板１が遊嵌されて
いる。A heater 2 made of carbon for heating the substrate 1 is arranged between the inner wall of the reaction tube 5 and the substrate 1. The inner wall of the reaction tube 5 surrounds the heater 2. , A heat insulating material 7 is provided. The heat insulating material 7 includes a rear heat insulating material 71 provided behind the heater 2, a side heat insulating material 72 provided on the side of the heater 2, and a gas inlet side heat insulating material provided on the gas inlet 3 side. 73 and a gas discharge portion side heat insulating material 74 provided on the gas discharge portion 4 side. Further, a partition plate 6 is provided in front of the heater 2. A hole 6 having a diameter slightly larger than that of the substrate 1 is provided at the center of the partition plate 6.
The substrate 1 is loosely fitted in the hole 6a.
【００２７】図３は、本発明の実施の形態１に係る化学
気相成長装置の一部拡大断面図である。ガス導入部側断
熱材７３及びガス排出部側断熱材７４は、ネジ１３によ
り反応管５の内壁に取り付けられている。仕切り板６及
び背後断熱材７１の端部間には連結部材１４が介在させ
られており、仕切り板６、連結部材１４及び背後断熱材
７１に設けられたネジ挿通孔を通されたネジ１５が、反
応管５の内壁に設けられた固定部１６にネジ止めされる
ことにより、仕切り板６及び背後断熱材７１は反応管５
の内壁に固定されている。FIG. 3 is a partially enlarged cross-sectional view of the chemical vapor deposition apparatus according to Embodiment 1 of the present invention. The gas inlet side heat insulator 73 and the gas outlet side heat insulator 74 are attached to the inner wall of the reaction tube 5 by screws 13. The connecting member 14 is interposed between the end portions of the partition plate 6 and the rear heat insulating material 71, and the screw 15 passed through the screw insertion hole provided in the partition plate 6, the connecting member 14 and the rear heat insulating material 71 is provided. The partition plate 6 and the rear heat insulating material 71 are screwed to the fixing portion 16 provided on the inner wall of the reaction tube 5 so that the reaction tube 5
Is fixed to the inner wall.
【００２８】反応管５と回転機構１２との間にはステン
レス管１０が設けられており、ステンレス管１０の中を
回転軸１１が通されている。ステンレス管１０は図示し
ない水冷機構により冷却される。ステンレス管１０の端
部にはパージガス配管９１が取り付けられており、パー
ジガスがパージガス配管９１からステンレス管１０を介
し反応管５内に導入される。これにより回転機構１２へ
原料ガスが拡散するのが防止される。また、反応管５の
側面には、これを貫通させてステンレス鋼製のパージガ
ス配管９２，９２が設けられており、背後断熱材７１に
はパージガス配管９２に連設した石英製のパージガス配
管９３，９３が貫通されている。これにより、断熱材７
及び仕切り板６により形成されるヒータ２収納空間にパ
ージガスが導入され、このヒータ２収納空間内に原料ガ
スが拡散するのが防止される。A stainless tube 10 is provided between the reaction tube 5 and the rotating mechanism 12, and a rotating shaft 11 is passed through the stainless tube 10. The stainless tube 10 is cooled by a water cooling mechanism (not shown). A purge gas pipe 91 is attached to an end of the stainless pipe 10, and a purge gas is introduced from the purge gas pipe 91 into the reaction tube 5 via the stainless pipe 10. This prevents the source gas from diffusing into the rotation mechanism 12. Purge gas pipes 92, 92 made of stainless steel are provided on the side surface of the reaction tube 5 so as to penetrate the same, and a quartz purge gas pipe 93, 93 is penetrated. Thereby, the heat insulating material 7
In addition, a purge gas is introduced into the heater 2 storage space formed by the partition plate 6 to prevent the source gas from diffusing into the heater 2 storage space.
【００２９】ヒータ２の両端部には電極２０が取り付け
られている。電極２０は、反応管５及び背後断熱材７１
を貫通させて取り付けられた石英絶縁管１７の中を通さ
れており、電極２０、反応管５及び背後断熱材７１は石
英絶縁管１７により絶縁される。電極２０の反応管５外
部側には図示しない水冷された銅電極が設けられてお
り、電流を電極２０に供給する。電極２０は、図示しな
いシール機構により外界と遮断されている。Electrodes 20 are attached to both ends of the heater 2. The electrode 20 includes the reaction tube 5 and the rear heat insulating material 71.
The electrode 20, the reaction tube 5 and the rear heat insulating material 71 are insulated by the quartz insulating tube 17. A water-cooled copper electrode (not shown) is provided outside the reaction tube 5 of the electrode 20, and supplies a current to the electrode 20. The electrode 20 is isolated from the outside world by a sealing mechanism (not shown).
【００３０】基板１にＳｉＣからなる材料を形成するの
に使用可能である原料ガスを表１に示す。これらのガス
は通常キャリアガスで希釈されて反応管５に導入され
る。キャリアガスとしてはＨ2 が最も一般的であるが、
Ａｒ及びＨｅも使用可能である。ＳｉＣの場合、原料コ
ストの点からメチルトリクロロシラン（ＣＨ3 ＳｉＣｌ
3 、以下ＭＴＳという）をＨ2 希釈したものがよく用い
られる。The formation of a material made of SiC on the substrate 1
Table 1 shows source gases that can be used for the above. These gases
Is usually diluted with a carrier gas and introduced into the reaction tube 5.
You. H as carrier gasTwoIs the most common, but
Ar and He can also be used. In the case of SiC,
In terms of strike, methyltrichlorosilane (CHThreeSiCl
Three, Hereinafter referred to as MTS)TwoDiluted ones are often used
Can be
【００３１】[0031]
【表１】 [Table 1]
【００３２】ＳｉＣ以外の材料の構成成分と、これを形
成するための原料ガスを表２に示す。これらのガスも一
般的にＨ2 で希釈されて反応管５に導入される。Table 2 shows constituent components of materials other than SiC and source gases for forming the same. These gases are also generally diluted with H 2 and introduced into the reaction tube 5.
【００３３】[0033]
【表２】 [Table 2]
【００３４】これらの他にも酸化物系セラミックス等の
合成も可能である。In addition to these, it is also possible to synthesize oxide ceramics and the like.
【００３５】［実施例１］上述の化学気相成長装置を用
い、直径ｄが３２５ｍｍである基板１にＳｉＣを堆積さ
せた。反応管５の鉛直方向の断面長を一定にし、水平方
向の断面長を変え、基板１，１の間隔ｈを変えて堆積試
験を行った。反応温度１２３０℃で、ＭＴＳ濃度１０％
のＨ2 希釈ガスを流量５００ＳＬＭで流し、基板１を回
転させながら堆積を行った。堆積を行った後、基板１の
中央部に形成されたＳｉＣ層の厚みを光学顕微鏡の断面
観察により測定し、測定した厚み及び堆積時間からＳｉ
Ｃ層の堆積速度（成長速度）を算出した。図４は、基板
１，１の間隔ｈを１、２、３、４、６、８、１０ｃｍに
変え、この間隔ｈの基板１の直径ｄに対する比ｈ／ｄ
と、ＳｉＣ層の堆積速度との関係を示したグラフであ
る。図４よりｈ／ｄが小さい程、ＳｉＣ層の堆積速度が
大きく、特にｈ／ｄが１５％以下である場合には、ｈ／
ｄを小さくすることによる堆積速度の増加効果が大きく
なることが判る。Example 1 Using the above-described chemical vapor deposition apparatus, SiC was deposited on a substrate 1 having a diameter d of 325 mm. The deposition test was performed with the vertical cross-section length of the reaction tube 5 constant, the horizontal cross-section length changed, and the distance h between the substrates 1 and 1 changed. Reaction temperature 1230 ° C, MTS concentration 10%
Flowing the diluted with H 2 gas at a flow rate 500 slm, it was deposited while rotating the substrate 1. After the deposition, the thickness of the SiC layer formed at the center of the substrate 1 was measured by cross-sectional observation with an optical microscope, and the SiC layer was measured based on the measured thickness and deposition time.
The deposition rate (growth rate) of the C layer was calculated. FIG. 4 shows the ratio h / d of the distance h to the diameter d of the substrate 1 when the distance h between the substrates 1, 1 is changed to 1, 2, 3, 4, 6, 8, 10 cm.
6 is a graph showing the relationship between the deposition rate of the SiC layer and the deposition rate of the SiC layer. As shown in FIG. 4, the smaller the h / d, the higher the deposition rate of the SiC layer. In particular, when the h / d is 15% or less, the h / d
It can be seen that the effect of increasing the deposition rate by reducing d is increased.
【００３６】上述したように基板１，１の間隔ｈが狭い
程、堆積速度が大きくなるが、最初に間隔ｈを狭く設定
した場合にはＳｉＣ層の形成に供なって原料ガスの流路
がより狭くなり、原料ガスを流すのが困難になる。従っ
て、厚いＳｉＣ層を形成する場合には、形成する層の厚
みを考慮して間隔ｈを設定する必要がある。また、堆積
したＳｉＣ層の厚みに対応させて間隔ｈを変え、原料ガ
スの流路の幅を一定に保持することにしてもよい。As described above, as the distance h between the substrates 1 and 1 is smaller, the deposition rate is higher. However, when the distance h is initially set to be smaller, the SiC layer is formed and the flow path of the source gas is reduced. It becomes narrower and it becomes difficult to flow the source gas. Therefore, when forming a thick SiC layer, it is necessary to set the interval h in consideration of the thickness of the layer to be formed. The width h of the flow path of the source gas may be kept constant by changing the interval h in accordance with the thickness of the deposited SiC layer.
【００３７】［実施例２］仕切り板６の設置の有無によ
る差異を調べた。仕切り板６を設置していない場合に
は、ヒータ２の表面にもＳｉＣ層が堆積する。ヒータ２
にＳｉＣ層が厚く堆積すると、加熱不良が生じる。この
場合、ヒータ２を交換する必要があるので、ヒータ２へ
の堆積を減少させることが望まれる。このＳｉＣ層の堆
積は、特にガス導入部３側で著しく、基板１上に所定量
ＳｉＣ層が堆積する前にヒータ２の加熱不良が生じたこ
ともあった。仕切り板６を設け、原料ガスがヒータ２側
に流れ込まないようにすることにより、ＳｉＣ層の堆積
が抑制され、加熱不良が防止されることが確認された。[Example 2] The difference depending on the presence or absence of the partition plate 6 was examined. When the partition plate 6 is not provided, the SiC layer is also deposited on the surface of the heater 2. Heater 2
When a thick SiC layer is deposited on the substrate, poor heating occurs. In this case, since the heater 2 needs to be replaced, it is desired to reduce the deposition on the heater 2. The deposition of the SiC layer was particularly remarkable on the gas introduction section 3 side, and the heating failure of the heater 2 occurred before the predetermined amount of the SiC layer was deposited on the substrate 1. It was confirmed that by providing the partition plate 6 and preventing the raw material gas from flowing into the heater 2 side, the deposition of the SiC layer was suppressed, and the heating failure was prevented.
【００３８】上記仕切り板６を設置した場合において
も、ＳｉＣ層を厚く堆積させるとき、及び基板１に複数
回堆積を行うときには、ヒータ２表面にＳｉＣ層が堆積
して加熱不良が生じる。これは、仕切り板６と基板１と
の隙間から入った原料ガスが徐々に堆積したものと考え
られる。Even when the partition plate 6 is provided, when the SiC layer is deposited thickly or when the deposition is performed on the substrate 1 a plurality of times, the SiC layer is deposited on the surface of the heater 2 to cause poor heating. This is considered to be due to the fact that the raw material gas entering from the gap between the partition plate 6 and the substrate 1 was gradually deposited.
【００３９】［実施例３］断熱材７及び仕切り板６によ
り形成されるヒータ２収納空間に、パージガス配管９
１、９２及び９３からＨ2 を流量１０ＳＬＭで導入し
た。これにより、ヒータ２へのＳｉＣの堆積が著しく減
少し、ヒータ２の交換頻度をパージを行わない場合の１
／４まで低減させることができた。Ｈ2 のパージ量をさ
らに増加させると、基板１の端部におけるＳｉＣの堆積
速度が減少して、層の厚みが不均一になるので、流量は
１０ＳＬＭ前後が好ましいことが確認された。[Embodiment 3] A purge gas pipe 9 is provided in the heater 2 storage space formed by the heat insulating material 7 and the partition plate 6.
From 1,92 and 93 were introduced and H 2 at a flow rate of 10 SLM. Thereby, the deposition of SiC on the heater 2 is significantly reduced, and the replacement frequency of the heater 2 is reduced to 1
/ 4. If the purge amount of H 2 is further increased, the deposition rate of SiC at the edge of the substrate 1 decreases, and the thickness of the layer becomes non-uniform. Therefore, it was confirmed that the flow rate was preferably around 10 SLM.
【００４０】［実施例４］反応管５及び基板１の配置の
向きを変えて堆積試験を行った。図５（ａ）に示したよ
うに、反応管５をガス流れ方向を水平方向に一致させて
配置し、基板１，１の平面を水平方向に一致させた場合
には、上方の基板１上に形成されるＳｉＣ層の厚みが、
下方の基板１上に形成されるＳｉＣ層の厚みより厚くな
る。特に、基板１の端部でその傾向が著しく、上方の基
板１の厚みは下方の基板１の厚みより１０％以上厚くな
った。この配置では２枚の材料の層厚が不揃いになり、
厚みが同一であるＳｉＣ板を多数製造することができな
いことが判った。Example 4 A deposition test was performed with the orientation of the reaction tube 5 and the substrate 1 changed. As shown in FIG. 5 (a), when the reaction tube 5 is arranged so that the gas flow direction is aligned in the horizontal direction, and when the planes of the substrates 1 and 1 are aligned in the horizontal direction, the reaction tube 5 is placed on the upper substrate 1. The thickness of the SiC layer formed in
It becomes thicker than the thickness of the SiC layer formed on the substrate 1 below. In particular, the tendency was remarkable at the end of the substrate 1, and the thickness of the upper substrate 1 was 10% or more thicker than that of the lower substrate 1. In this arrangement, the layer thickness of the two materials is uneven,
It turned out that many SiC plates having the same thickness cannot be manufactured.
【００４１】図５（ｂ）に示したように、反応管５をガ
ス流れ方向を鉛直方向に一致させて配置しており、基板
１，１の平面を鉛直方向に一致させた場合には、２枚の
基板１の厚みの差は１０％以下まで改善された。図５
（ｃ）に示したように、（ａ）と同様に反応管５をガス
流れ方向を水平方向に一致させて配置するが、基板１，
１の平面を鉛直方向に一致させた場合には、２枚の基板
１の厚みの差は１０％以下であった。As shown in FIG. 5 (b), the reaction tube 5 is arranged so that the gas flow direction coincides with the vertical direction. When the planes of the substrates 1 and 1 coincide with the vertical direction, The difference between the thicknesses of the two substrates 1 was improved to 10% or less. FIG.
As shown in (c), as in (a), the reaction tube 5 is arranged with the gas flow direction in the horizontal direction.
In the case where the planes 1 were aligned in the vertical direction, the difference between the thicknesses of the two substrates 1 was 10% or less.
【００４２】図５（ａ）の配置では、重力により熱対流
が発生し、これが反応管５内の原料ガスの主流の対称性
を乱し、上下に配置された基板１の成長面への原料ガス
の供給量に差異が生じたと考えられる。図５（ｂ）及び
（ｃ）の配置では基板１の平面が鉛直方向に一致してお
り、２枚の基板１の成長面への原料ガスの供給量に差異
が生じないために、上述の改善効果が見られたものと考
えられる。但し、図５（ｃ）の場合は、側方断熱材７２
のうち、反応管５の上部に配置されるものへのＳｉＣの
付着が増加するため、炉材コストの点から（ｂ）の配置
の方が好ましい。In the arrangement shown in FIG. 5 (a), thermal convection is generated due to gravity, which disturbs the symmetry of the main flow of the raw material gas in the reaction tube 5 and causes the raw material to flow to the growth surfaces of the vertically arranged substrates 1. It is considered that there was a difference in the gas supply amount. In the arrangements of FIGS. 5B and 5C, the plane of the substrate 1 coincides with the vertical direction, and there is no difference in the supply amount of the raw material gas to the growth surfaces of the two substrates 1. It is considered that the improvement effect was observed. However, in the case of FIG.
Among them, the arrangement of (b) is more preferable from the viewpoint of the cost of the furnace material because the adhesion of SiC to the one disposed above the reaction tube 5 increases.
【００４３】実施の形態２．図６は、本発明の実施の形
態２に係る化学気相成長装置を示す模式図である。反応
管５の内部構造は図１と同様であり、ガス流れ方向を水
平方向に一致させて反応管５を配置している。反応管５
の端部には、３つのガス導入部３１，３２，３３が設け
られている。原料ガスは図中右方から供給され、途中で
分岐してガス導入部３１，３２，３３から反応管５内に
供給される。分岐点と各ガス導入部３１，３２，３３と
の間には、ガス流量制御機３４，３４，３４が配置され
ている。ガス流量制御器３４，３４，３４はそれぞれコ
ンダクタンス調整バルブ及び流量計を備えている。Embodiment 2 FIG. 6 is a schematic diagram showing a chemical vapor deposition apparatus according to Embodiment 2 of the present invention. The internal structure of the reaction tube 5 is the same as that of FIG. 1, and the reaction tube 5 is arranged with the gas flow direction aligned in the horizontal direction. Reaction tube 5
Are provided with three gas introduction portions 31, 32, and 33. The raw material gas is supplied from the right side in the figure, branches off on the way, and is supplied into the reaction tube 5 from the gas introduction sections 31, 32, and 33. Gas flow controllers 34, 34, 34 are arranged between the branch point and each of the gas introduction sections 31, 32, 33. Each of the gas flow controllers 34, 34, 34 includes a conductance adjusting valve and a flow meter.
【００４４】［実施例５］この化学気相成長装置を用
い、実施例１と同様の条件でＳｉＣの堆積を行った。こ
のとき、各流量制御機３４，３４，３４により各ガス導
入部３１，３２，３３から反応管５に供給される原料ガ
スの流量を制御して、ガス導入部３１とガス導入部３３
とから供給される原料ガスの流量は常に等しくし、この
流量に対する、ガス導入部３２から供給される原料ガス
の流量の比を変え、各条件において、基板１に堆積され
たＳｉＣ層の厚みの分布を調べた。表３に、各条件にお
けるガス導入部３１，３２，３３のガス流量及び流量比
を示し、図７に、ＳｉＣ層の厚みの分布を調べた結果を
示す。図７中の記号は、表３の条件名に対応させてい
る。Example 5 Using this chemical vapor deposition apparatus, SiC was deposited under the same conditions as in Example 1. At this time, the flow rate of the raw material gas supplied to the reaction tube 5 from each of the gas introduction units 31, 32, 33 is controlled by each of the flow controllers 34, 34, 34, and the gas introduction unit 31 and the gas introduction unit 33 are controlled.
The flow rate of the source gas supplied from the gas inlet 32 is always equal to the flow rate of the source gas supplied from the gas introduction unit 32, and the thickness of the SiC layer deposited on the substrate 1 is changed under each condition. The distribution was examined. Table 3 shows a gas flow rate and a flow rate ratio of the gas introduction sections 31, 32, and 33 under each condition, and FIG. 7 shows a result of examining a thickness distribution of the SiC layer. The symbols in FIG. 7 correspond to the condition names in Table 3.
【００４５】[0045]
【表３】 [Table 3]
【００４６】基板１は堆積中に回転させており、堆積し
たＳｉＣ層の厚みは周方向には均一化されているので、
ＳｉＣ層の厚みは基板１の中心からの距離により変わ
る。図７は基板１の中心部から端部にかけてＳｉＣ層の
厚みがどのように変化するかを示している。ＳｉＣ層の
厚みは、各サンプルにつき基板１の中央部の層厚で正規
化して表示している。各ガス導入部３１，３２，３３か
らの流量が全て等しい場合（条件（ａ））は、ＳｉＣ層
の厚みは基板１の端部で厚くなり、全体的に均一でな
い。The substrate 1 is rotated during the deposition, and the thickness of the deposited SiC layer is uniform in the circumferential direction.
The thickness of the SiC layer changes depending on the distance from the center of the substrate 1. FIG. 7 shows how the thickness of the SiC layer changes from the center to the end of the substrate 1. The thickness of the SiC layer is normalized by the layer thickness at the central portion of the substrate 1 for each sample. When the flow rates from the gas introduction sections 31, 32, and 33 are all equal (condition (a)), the thickness of the SiC layer increases at the end of the substrate 1 and is not entirely uniform.
【００４７】基板１の中央部に原料ガスを供給するガス
導入部３２の流量を増加させた（ｂ）、（ｃ）及び
（ｄ）の条件で堆積を行った場合、基板１の端部の厚み
は相対的に減少し、層厚の均一性が向上する。流量比を
さらに大きくすると、中央部が端部より層が厚くなって
層厚の均一性が悪くなり、上述の堆積条件では、流量比
が１．６４の場合、最も層圧の均一性が優れていた。上
述のガス流量制御機３４としてマスフローコントローラ
を用いれば、ガス流量の分配を自動で制御することがで
きるので、好ましい。なお、この実施の形態において
は、ガス流れ方向を水平方向に一致させて反応管５を配
置した場合につき説明しているが、ガス流れ方向を鉛直
方向に一致させて反応管５を配置することにしてもよ
い。When the deposition is performed under the conditions (b), (c) and (d) in which the flow rate of the gas introduction part 32 for supplying the raw material gas to the central portion of the substrate 1 is increased, The thickness is relatively reduced and the uniformity of the layer thickness is improved. If the flow rate ratio is further increased, the layer becomes thicker at the central portion than at the end portions, resulting in poor uniformity of the layer thickness. Under the above deposition conditions, the uniformity of the layer pressure is most excellent when the flow rate ratio is 1.64. I was It is preferable to use a mass flow controller as the gas flow controller 34 because the distribution of the gas flow can be automatically controlled. In this embodiment, the case where the reaction tube 5 is arranged with the gas flow direction aligned in the horizontal direction is described, but the reaction tube 5 is arranged with the gas flow direction aligned in the vertical direction. It may be.
【００４８】実施の形態３．図８は、本発明の実施の形
態３に係る化学気相成長装置のガス導入部を示す模式的
断面図である。図中、矢印は一方の基板１の成長面の法
線方向を示す。反応管５のガス導入部以外の部分は、図
１と同様である。反応管５の端部中央部には突設部５ａ
が設けられており、この突設部５ａにガス供給管４０が
連設されている。突設部５ａの端面内周側には突起部５
ｂが設けられており、突設部５ａの端面内側にはノズル
挿通管４３が連設されている。ノズル挿通管４３にはベ
ローズ４４が設けられている。ノズル挿通管４３内に
は、突起部５ｂに遊嵌された状態で、ノズル４２が導入
されている。ノズル４２の外側端部の側面には、ガス供
給管４０を貫通した角度制御棒４１，４１が一直線上に
設けられており、角度制御棒４１，４１は、図示しない
直線位置制御機構により精密にその長手方向のスライド
が制御される。ノズル４２は、角度制御棒４１，４１の
スライドにより突起部５ｂを支点としてその先端を成長
面の法線方向に微小量変化させることが可能であり、ベ
ローズ４４によりノズル挿通管４３のシール性を維持し
つつ、ノズル４２の角度が変えられる。Embodiment 3 FIG. 8 is a schematic cross-sectional view showing a gas introduction part of the chemical vapor deposition apparatus according to Embodiment 3 of the present invention. In the figure, the arrow indicates the normal direction of the growth surface of one substrate 1. Portions of the reaction tube 5 other than the gas inlet are the same as those in FIG. A protruding portion 5a is provided at the center of the end of the reaction tube 5.
Is provided, and a gas supply pipe 40 is connected to the protruding portion 5a. A protrusion 5 is provided on the inner peripheral side of the end face of the protrusion 5a.
b is provided, and a nozzle insertion tube 43 is continuously provided inside the end face of the protruding portion 5a. A bellows 44 is provided in the nozzle insertion tube 43. The nozzle 42 is introduced into the nozzle insertion tube 43 while being loosely fitted to the protrusion 5b. Angle control rods 41, 41 penetrating the gas supply pipe 40 are provided in a straight line on the side surface of the outer end portion of the nozzle 42. The angle control rods 41, 41 are precisely formed by a linear position control mechanism (not shown). The longitudinal slide is controlled. The tip of the nozzle 42 can be changed by a small amount in the normal direction of the growth surface with the projection 5b as a fulcrum by sliding the angle control rods 41, 41, and the bellows 44 improves the sealing performance of the nozzle insertion tube 43. While maintaining, the angle of the nozzle 42 is changed.
【００４９】突設部５ａにはパージガス配管９４が設け
られており、このパージガス配管９４からＨ2 ガスを供
給することにより、ガス導入部内にＳｉＣが堆積するの
が抑制される。また、反応管５の端部中央側には、冷水
循環部４５が内設されており、冷水を循環させることに
よりガス導入部が低温に維持されるので、ＳｉＣが堆積
するのが抑制される。さらに、この冷却により、熱に弱
いベローズ４４の温度上昇が防止される効果もある。The projecting portion 5a is provided with a purge gas pipe 94. By supplying H 2 gas from the purge gas pipe 94, the deposition of SiC in the gas inlet is suppressed. Further, a cold water circulating portion 45 is provided in the center of the end portion of the reaction tube 5, and the gas introduction portion is maintained at a low temperature by circulating the cold water, so that the deposition of SiC is suppressed. . Further, the cooling also has an effect of preventing a temperature rise of the bellows 44 which is weak against heat.
【００５０】２枚の基板１の層厚に差が生じた場合に
は、角度制御棒４１，４１をスライドさせ、ノズル４２
の角度を層厚が薄い基板１の方に傾ける。その結果、前
記基板１の層厚が増加し、他方の基板１のＳｉＣの堆積
量が減少する。層厚の差が十分に改善されない場合はノ
ズル４２の角度をさらに傾け、厚みの大小関係が逆転し
た場合はノズル４２の角度を逆方向に戻す。この化学気
相成長装置を使用して２枚の基板１の層厚を調整した結
果、基板１間の層厚の差異を５％以下に低減させること
ができた。なお、この実施の形態においては、ガス流れ
方向を鉛直方向に一致させて反応管５を配置した場合に
つき説明しているが、ガス流れ方向を水平方向に一致さ
せて反応管５を配置することにしてもよい。但し、ガス
流れ方向を鉛直方向に一致させた方が、２枚の基板１の
層厚の差異を小さくすることができる。When there is a difference in the layer thickness between the two substrates 1, the angle control rods 41
Is inclined toward the substrate 1 having a smaller layer thickness. As a result, the layer thickness of the substrate 1 increases, and the amount of SiC deposited on the other substrate 1 decreases. If the difference between the layer thicknesses is not sufficiently improved, the angle of the nozzle 42 is further inclined, and if the thickness relationship is reversed, the angle of the nozzle 42 is returned to the opposite direction. As a result of adjusting the layer thickness of the two substrates 1 using this chemical vapor deposition apparatus, the difference in the layer thickness between the substrates 1 could be reduced to 5% or less. Note that, in this embodiment, the case where the reaction tube 5 is arranged with the gas flow direction coincident with the vertical direction is described, but the reaction tube 5 is arranged with the gas flow direction coincident with the horizontal direction. It may be. However, by making the gas flow directions coincide with the vertical direction, the difference in the layer thickness between the two substrates 1 can be reduced.
【００５１】以上のように、本発明においては、反応チ
ャンバ内に、原料ガスの流路を挟み、平面を相対させて
２枚の基板を配置しており、原料ガスが流れる空間が狭
まるので基板に材料層が堆積する速度が向上するととも
に、一度に２枚の材料を形成するので生産性が向上す
る。なお、前記実施の形態においては、基板１が円板形
状である場合につき説明しているがこれに限定されるも
のではない。但し、基板１の形状が円板形状でない場合
にこれを回転させるためは、仕切り板６と基板１との間
に大きく隙間を採る必要があり、ヒータ２への原料ガス
の拡散の低減が図れないので、基板１の形状は円板であ
るのが好ましい。As described above, in the present invention, two substrates are arranged in a reaction chamber with the flow path of the source gas therebetween and the planes opposed to each other. The speed at which the material layer is deposited is improved, and productivity is improved because two materials are formed at a time. In the above embodiment, the case where the substrate 1 has a disk shape is described, but the present invention is not limited to this. However, in order to rotate the substrate 1 when the substrate 1 is not a disk, it is necessary to provide a large gap between the partition plate 6 and the substrate 1, and it is possible to reduce the diffusion of the source gas to the heater 2. Therefore, the shape of the substrate 1 is preferably a disk.
【００５２】また、前記実施の形態においては、２枚の
基板１が同一形状及び同一寸法である場合につき説明し
ているがこれに限定されない。この場合、２枚の基板１
の間隔は、ガス流れ方向長さが長い方の基板１の前記長
さの１〜１５％にするのが好ましい。但し、２枚の基板
１の形状及び寸法が異なる場合、各堆積面における堆積
速度分布が異なるので、原料ガスの流路空間における原
料ガスの輸送の対称性が低下する。原料ガスの流れ（拡
散）に偏りが生じるので、２枚の材料の堆積速度が均一
でなくなり、２枚の材料の層厚が均一でなくなるので、
厚みが等しい２枚の材料を得るには、２枚の基板１，１
を同一形状、同一寸法とするのが好ましい。そして、基
板１の間隔は、仕切り板６にも材料層が形成される場合
においては、その部分も含めた長さの長い方の１〜１５
％にする。In the above embodiment, the case where the two substrates 1 have the same shape and the same size has been described, but the present invention is not limited to this. In this case, two substrates 1
Is preferably 1 to 15% of the length of the substrate 1 having the longer length in the gas flow direction. However, if the shapes and dimensions of the two substrates 1 are different, the deposition rate distribution on each deposition surface is different, and the symmetry of transport of the source gas in the source gas flow path space is reduced. Since the flow (diffusion) of the source gas is biased, the deposition rates of the two materials are not uniform, and the layer thicknesses of the two materials are not uniform.
In order to obtain two materials having the same thickness, two substrates 1, 1
Preferably have the same shape and the same dimensions. When the material layer is also formed on the partition plate 6, the interval between the substrates 1 is 1 to 15 of the longer length including that portion.
%.
【００５３】そして、前記実施の形態においては、基板
１と回転軸１１とを一体化させた場合につき説明してい
るがこれに限定されるものではなく、基板１の交換を容
易にするために、基板１を回転軸１１に取り付ける構
成、又は基板１を回転軸１１上に取り付けた載置板に載
置する構成にしてもよい。In the above embodiment, the case where the substrate 1 and the rotary shaft 11 are integrated is described. However, the present invention is not limited to this case. The configuration may be such that the substrate 1 is mounted on the rotating shaft 11 or the substrate 1 is mounted on a mounting plate mounted on the rotating shaft 11.
【００５４】[0054]
【発明の効果】以上、詳述したように、第１及び第５発
明による場合は、反応チャンバ内に、原料ガスの流路を
挟み、平面を相対させて２枚の基板を配置しており、材
料層の堆積速度が効果的に高くなる原料ガス流れ空間を
実現するとともに、一度に２枚の材料を形成するので生
産性が向上する。As described above in detail, in the first and fifth aspects of the present invention, two substrates are arranged in a reaction chamber with the flow path of the source gas therebetween and the planes opposed to each other. In addition, a raw material gas flow space in which the deposition rate of the material layer is effectively increased is realized, and productivity is improved because two materials are formed at a time.
【００５５】第２発明による場合は、２枚の基板の間隔
を、材料を形成させる部位の原料ガスの流れ方向長さの
前記長さの１〜１５％にしているので、堆積効率が良好
であり、堆積速度が速い。In the case of the second invention, the interval between the two substrates is set to 1 to 15% of the length in the flow direction of the source gas at the portion where the material is formed, so that the deposition efficiency is good. Yes, high deposition rate.
【００５６】第３発明による場合は、平面を鉛直方向と
略一致させて基板を相対させるので、重力により熱対流
が発生し、原料ガスの流れに乱れが生じた場合において
も２枚の材料の層厚を均一にすることができる。第４発
明による場合は、基板をその平面を通る軸を中心に回転
させるので、原料ガスが基板の周方向に均一に供給さ
れ、材料の層厚の均一性が向上する。According to the third aspect of the present invention, since the substrates are opposed to each other with the plane substantially aligned with the vertical direction, thermal convection is generated due to gravity, and even if the flow of the raw material gas is disturbed, the two materials can be used. The layer thickness can be made uniform. In the case of the fourth aspect, since the substrate is rotated about an axis passing through the plane, the source gas is supplied uniformly in the circumferential direction of the substrate, and the uniformity of the layer thickness of the material is improved.
【００５７】第６発明による場合は、配置する２枚の基
板の間隔を調整可能になしてあるので、形成する材料の
厚みに適した間隔を設定することができ、また、堆積し
た材料層の厚みに対応させて基板の間隔を変え、原料ガ
スの流路の幅を一定に保持することができる。第７発明
による場合は、基板の周囲に、原料ガスがヒータに拡散
するのを防ぐための仕切り板を原料ガスの流路に対向さ
せて配置しているので、ヒータに材料層が堆積して加熱
不良が生じるのを防止することができる。In the case of the sixth aspect, since the distance between the two substrates to be arranged can be adjusted, the distance suitable for the thickness of the material to be formed can be set. The width of the flow path of the source gas can be kept constant by changing the distance between the substrates according to the thickness. In the case of the seventh aspect, since the partition plate for preventing the source gas from diffusing to the heater is disposed around the substrate so as to face the flow path of the source gas, the material layer is deposited on the heater. The occurrence of poor heating can be prevented.
【００５８】第８発明による場合は、反応チャンバに原
料ガスを導入する複数のガス導入部を備え、各ガス導入
部から原料ガスの流量を互いに独立して制御するので、
材料の層厚をさらに均一化することができる。第９発明
による場合は、反応チャンバに原料ガスを導入するノズ
ルを有したガス導入部を備え、ノズルの角度を変えるこ
とができるので、２枚の材料の層厚を均一化することが
できる。According to the eighth aspect of the present invention, a plurality of gas inlets for introducing the source gas into the reaction chamber are provided, and the flow rates of the source gas from each gas inlet are controlled independently of each other.
The layer thickness of the material can be made more uniform. In the case of the ninth invention, a gas introduction unit having a nozzle for introducing a source gas into the reaction chamber is provided, and the angle of the nozzle can be changed, so that the thickness of the two materials can be made uniform.
【図１】本発明の実施の形態１に係る化学気相成長装置
を示す模式的断面図である。FIG. 1 is a schematic sectional view showing a chemical vapor deposition apparatus according to Embodiment 1 of the present invention.
【図２】図１のII−II線による断面図である。FIG. 2 is a sectional view taken along line II-II of FIG.
【図３】本発明の実施の形態１に係る化学気相成長装置
の一部拡大断面図である。FIG. 3 is a partially enlarged cross-sectional view of the chemical vapor deposition apparatus according to Embodiment 1 of the present invention.
【図４】基板の間隔ｈの基板の直径ｄに対する比ｈ／ｄ
と、ＳｉＣ層の堆積速度との関係を示したグラフであ
る。FIG. 4 shows the ratio h / d of the substrate spacing h to the substrate diameter d.
6 is a graph showing the relationship between the deposition rate of the SiC layer and the deposition rate of the SiC layer.
【図５】（ａ）はガス流れ方向を水平方向に一致させて
反応管を配置し、基板の平面を水平方向に一致させた場
合を示す模式図、（ｂ）はガス流れ方向を鉛直方向に一
致させて反応管を配置し、基板の平面を鉛直方向に一致
させた場合を示す模式図、（ｃ）はガス流れ方向を水平
方向に一致させて反応管を配置し、基板の平面を鉛直方
向に一致させた場合を示す模式図である。FIG. 5A is a schematic diagram showing a case where a reaction tube is arranged with a gas flow direction aligned in a horizontal direction and a plane of a substrate is aligned in a horizontal direction, and FIG. 5B is a schematic diagram showing a gas flow direction in a vertical direction. (C) is a schematic view showing a case where the reaction tubes are arranged in accordance with the vertical direction and the plane of the substrate is aligned in the vertical direction. It is a schematic diagram which shows the case where it matched in the perpendicular direction.
【図６】本発明の実施の形態２に係る化学気相成長装置
を示す模式図である。FIG. 6 is a schematic diagram showing a chemical vapor deposition apparatus according to Embodiment 2 of the present invention.
【図７】基板の端部に原料ガスを供給するガス導入部の
ガス流量に対する、基板の中央部に原料ガスを供給する
ガス導入部のガス流量の比を変え、基板に堆積されたＳ
ｉＣ層の厚みの分布を調べた結果を示すグラフである。FIG. 7 is a graph showing the relationship between the gas flow rate of the gas inlet for supplying the source gas to the center of the substrate and the gas flow rate of the gas inlet for supplying the source gas to the end of the substrate, and
It is a graph which shows the result of having investigated distribution of the thickness of iC layer.
【図８】本発明の実施の形態３に係る化学気相成長装置
のガス導入部を示す模式的断面図である。FIG. 8 is a schematic sectional view showing a gas introduction part of a chemical vapor deposition apparatus according to Embodiment 3 of the present invention.
１ 基板 ２ ヒータ ３ ガス導入部 ４ ガス排出部 ５ 反応管 ６ 仕切り板 ７ 断熱材 １２ 回転機構 ３４ ガス流量制御機 ４１ 角度制御棒 ４２ ノズル ９１ パージガス配管 ９２ パージガス配管 ９３ パージガス配管 ９４ パージガス配管 DESCRIPTION OF SYMBOLS 1 Substrate 2 Heater 3 Gas introduction part 4 Gas discharge part 5 Reaction tube 6 Partition plate 7 Insulation material 12 Rotation mechanism 34 Gas flow controller 41 Angle control rod 42 Nozzle 91 Purge gas pipe 92 Purge gas pipe 93 Purge gas pipe 94 Purge gas pipe
Claims (9)
路に、平面を臨ませて基板を配置し、前記平面上に前記
原料ガスの反応生成物からなる材料を形成する化学気相
成長方法において、 前記原料ガスの流路を挟んで、２枚の基板を相対させて
配置することを特徴とする化学気相成長方法。1. A chemical vapor deposition method in which a substrate is arranged with a flat surface facing a flow path of a source gas flowing into a reaction chamber, and a material comprising a reaction product of the source gas is formed on the flat surface. The method according to claim 1, wherein the two substrates are disposed so as to face each other with the flow path of the source gas interposed therebetween.
物からなる材料を形成させる部位の前記原料ガスの流れ
方向長さの１〜１５％とする請求項１記載の化学気相成
長方法。2. The chemical vapor deposition method according to claim 1, wherein an interval between the substrates is 1 to 15% of a length in a flow direction of the source gas at a portion where a material made of a reaction product of the source gas is formed. .
を相対させる請求項１又は２記載の化学気相成長方法。3. The chemical vapor deposition method according to claim 1, wherein the substrates are opposed to each other with a plane substantially coincident with a vertical direction.
転させる請求項１乃至３のいずれかに記載の化学気相成
長方法。4. The chemical vapor deposition method according to claim 1, wherein the substrate is rotated about an axis passing through a plane thereof.
路に、平面を臨ませて基板を配置して、前記平面上に前
記原料ガスの反応生成物からなる材料を形成すべくなし
てある化学気相成長装置において、 前記原料ガスの流路を挟んで、２枚の基板を相対させて
配置すべくなしてあり、２枚の基板を加熱するヒータを
設けたことを特徴とする化学気相成長装置。5. A substrate is disposed with a flat surface facing a flow path of a raw material gas flowing into a reaction chamber, and a material composed of a reaction product of the raw material gas is formed on the flat surface. In the chemical vapor deposition apparatus, the two substrates are arranged so as to face each other across the flow path of the source gas, and a heater for heating the two substrates is provided. Phase growth equipment.
なしてある請求項５記載の化学気相成長装置。6. The chemical vapor deposition apparatus according to claim 5, wherein the distance between the two substrates to be arranged can be adjusted.
前記ヒータに拡散するのを防ぐための仕切り板を前記原
料ガスの流路に対向させて配置してある請求項５又は６
記載の化学気相成長装置。7. A partition plate for preventing the source gas from diffusing to the heater is disposed around the substrate to be disposed, facing the flow path of the source gas.
A chemical vapor deposition apparatus as described.
する複数のガス導入部を備え、各ガス導入部から原料ガ
スの流量を互いに独立して制御すべくなしてある請求項
５乃至７のいずれかに記載の化学気相成長装置。8. The reaction chamber according to claim 5, further comprising a plurality of gas introduction sections for introducing the source gas into the reaction chamber, wherein the flow rates of the source gases from the respective gas introduction sections are controlled independently of each other. A chemical vapor deposition apparatus according to any one of the above.
するノズルを有したガス導入部を備え、前記ノズルの角
度を変更可能になしてある請求項５乃至８のいずれかに
記載の化学気相成長装置。9. The chemical vapor phase according to claim 5, further comprising a gas introduction unit having a nozzle for introducing the source gas into the reaction chamber, wherein an angle of the nozzle is changeable. Growth equipment.
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| JP2000071187A JP2001262353A (en) | 2000-03-14 | 2000-03-14 | Method and system for chemical vapor deposition(cvd) |
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|---|---|---|---|
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Family
ID=18589809
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|---|---|---|---|
| JP2000071187A Pending JP2001262353A (en) | 2000-03-14 | 2000-03-14 | Method and system for chemical vapor deposition(cvd) |
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