CN110714222A - Controllable side exhaust apparatus of flow and have device's crystal pulling stove - Google Patents
Controllable side exhaust apparatus of flow and have device's crystal pulling stove Download PDFInfo
- Publication number
- CN110714222A CN110714222A CN201911076441.9A CN201911076441A CN110714222A CN 110714222 A CN110714222 A CN 110714222A CN 201911076441 A CN201911076441 A CN 201911076441A CN 110714222 A CN110714222 A CN 110714222A
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- outlet
- furnace body
- side exhaust
- crucible
- cavity
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention provides a flow-controllable side exhaust device and a crystal pulling furnace with the same, wherein the device comprises: the furnace body is internally limited with a cavity, and the top of the furnace body is provided with a crystal pulling opening communicated with the cavity; a base disposed within the chamber; the crucible is arranged on the base; and a first outlet communicated with the cavity is arranged on the side wall of the furnace body to discharge gas in the cavity, and the first outlet is positioned above the crucible. The oxide generated in the melting process of the polycrystalline silicon can be discharged through the first outlet, so that the gas containing the oxide is prevented from flowing towards the heat insulating material and other structural members at the lower part of the side exhaust device, the oxide is prevented from being attached to the heat insulating material and other structural members, the heat insulating material and other structural members are prevented from being etched, the service lives of the heat insulating material and other structural members are prolonged, and the heat insulating effect of the heat insulating material is ensured.
Description
Technical Field
The invention relates to the field of crystal pulling furnaces, in particular to a flow-controllable side exhaust device and a crystal pulling furnace with the same.
Background
When the monocrystalline crystal bar is produced, a quartz crucible is placed on a base of a crystal pulling furnace, the quartz crucible is filled with polycrystalline silicon, then the polycrystalline silicon is melted, and then a crystal pulling process is carried out to grow the crystal bar.
Disclosure of Invention
The invention provides a flow-controllable side exhaust device and a crystal pulling furnace with the same.
In a first aspect, a controllable flow side exhaust apparatus according to an embodiment of the present invention includes:
the furnace body is internally limited with a cavity, and the top of the furnace body is provided with a crystal pulling opening communicated with the cavity;
a base disposed within the chamber;
the crucible is arranged on the base;
and a first outlet communicated with the cavity is arranged on the side wall of the furnace body to discharge gas in the cavity, and the first outlet is positioned above the crucible.
The side wall of the furnace body is provided with a plurality of first outlets distributed at intervals.
The side wall of the furnace body is provided with a plurality of first outlets which are uniformly distributed along the circumferential direction of the furnace body at intervals.
And a second outlet communicated with the cavity is formed in the bottom of the furnace body.
The bottom of the furnace body is provided with a plurality of second outlets which are distributed at the bottom of the furnace body at intervals.
Wherein the second outlet is arranged adjacent to the side wall of the furnace body.
The furnace body is characterized in that a first pipeline and a second pipeline are respectively arranged outside the furnace body, one end of the first pipeline is communicated with the first outlet, one end of the second pipeline is communicated with the second outlet, and the other end of the first pipeline is communicated with the other end of the second pipeline.
The first outlet or the first pipeline is provided with a first regulating valve for regulating the gas flow flowing out of the first outlet, and the second outlet or the second pipeline is provided with a second regulating valve for regulating the gas flow flowing out of the second outlet.
The crucible is provided with a heater on the outer side, a heat insulating material is arranged between the heater and the inner wall of the furnace body, and/or a heat insulating material is arranged on the outer side wall of the base.
And heat insulating materials are respectively arranged on the inner wall of the furnace body and the outer side wall of the base.
And the axis of the furnace body, the axis of the base and the axis of the crystal pulling opening are collinear.
In a second aspect, a crystal pulling furnace according to an embodiment of the invention includes a flow-controllable side exhaust in the above-described embodiment.
The technical scheme of the invention has the following beneficial effects:
according to the side exhaust device with the controllable flow, the top of the furnace body is provided with the crystal pulling opening communicated with the cavity, the crucible is arranged on the base, the side wall of the furnace body is provided with the first outlet communicated with the cavity to exhaust gas in the cavity, the first outlet is positioned above the crucible, oxide generated in the polycrystalline silicon melting process can be exhausted through the first outlet, the gas containing the oxide is prevented from flowing towards the heat insulation materials and other structural members at the lower part of the side exhaust device, the oxide is prevented from being attached to the heat insulation materials and other structural members, the heat insulation materials and other structural members are prevented from being etched, the service lives of the heat insulation materials and other structural members are prolonged, and the heat insulation effect.
Drawings
FIG. 1 is a schematic structural view of a side exhaust apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of the direction of gas flow in a side exhaust according to an embodiment of the present invention;
FIG. 3 is a schematic view of the connection of the first pipe and the second pipe in the side exhaust apparatus according to the embodiment of the present invention;
fig. 4 is a schematic view of the heating lamp fitting to the mounting case.
Reference numerals
A furnace body 10; a chamber 11; a pull opening 12; a first outlet 13; a second outlet 14;
a first duct 15; a second duct 16; a first regulating valve 17; a second regulating valve 18; a side wall 19;
a base 20;
a crucible 30;
an insulating material 40; a heater 50; a mounting case 51; a mounting cavity 52; a breather pipe 53;
pulling the crystal tube 60; a lumen 61.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
When a single crystal ingot is produced, a quartz crucible is filled with polycrystalline silicon, then the polycrystalline silicon is melted, oxides are generated in the melting process of the polycrystalline silicon, gas containing the oxides flows to a heat insulation material and other structural members at the lower part of a crystal pulling furnace, the oxides are attached to the heat insulation material and other structural members, the oxides change thermal expansion coefficients after being attached to the heat insulation material and other structural members to cause damage, the gas containing the oxides can etch the heat insulation material and other structural members, the thickness of the heat insulation material is easily reduced, the service life of the heat insulation material is shortened, and the heat.
In order to solve the technical problem, an embodiment of the present invention provides a side exhaust apparatus with a controllable flow rate.
First, a flow-controllable side exhaust apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1 to 3, the side exhaust apparatus according to the embodiment of the present invention includes a furnace body 10, a susceptor 20, and a crucible 30.
Specifically, a chamber 11 is defined in the furnace body 10, a pull opening 12 communicating with the chamber 11 is provided at the top of the furnace body 10, a susceptor 20 is provided in the chamber 11, a crucible 30 is provided on the susceptor 20, a first outlet 13 communicating with the chamber 11 is provided on a side wall 19 of the furnace body 10 to discharge gas in the chamber 11, and the first outlet 13 is located above the crucible 30.
That is, a chamber 11 may be defined in the furnace body 10, and a pull port 12 may be provided at the top of the furnace body 10, the pull port 12 communicating with the chamber 11. A cylindrical crystal pulling tube 60 can be arranged at the position of the crystal pulling opening 12, a cylindrical cavity 61 is defined in the crystal pulling tube 60, the lower end of the cavity 61 of the crystal pulling tube 60 is communicated with the crystal pulling opening 12, and the axis of the crystal pulling opening 12 and the axis of the crystal pulling tube 60 can be collinear so as to grow crystal bars through the crystal pulling tube 60 and the crystal pulling opening 12. The susceptor 20 may be provided in the chamber 11, the susceptor 20 may be rotated, the crucible 30 may be provided on the susceptor 20, the susceptor 20 rotates with the crucible 30 so that the polycrystalline silicon solution in the crucible 30 is uniformly heated, and the gas may be exhausted from the chamber 11 through the first outlet 13 provided on the sidewall 19 of the furnace body 10 to communicate with the chamber 11. The first outlet 13 is located above the crucible 30 and may be provided with gas extraction means by which gas in the chamber 11 is extracted from the location of the first outlet 13. The first outlet 13 may be located at a position of the sidewall 19 between the crucible 30 and the pulling port 12, and oxide generated in the crucible 30 during melting of polycrystalline silicon directly flows toward the first outlet 13 and is discharged upward, thereby preventing gas containing oxide from flowing toward the heat insulating material 40 and other structural members at the outer periphery or below the crucible 30, preventing oxide from adhering to the heat insulating material 40 and other structural members, preventing the heat insulating material 40 and other structural members from being etched, prolonging the life of the heat insulating material and other structural members, and ensuring the heat insulating effect of the heat insulating material.
In some embodiments of the present invention, as shown in fig. 1 and 2, the sidewall 19 of the furnace body 10 may be provided with a plurality of first outlets 13 spaced apart, and the number of the first outlets 13 may be two. Alternatively, the plurality of first outlets 13 may be uniformly distributed at intervals along the circumferential direction of the furnace body 10, so that the oxide-containing gas generated in the crucible 30 can be discharged in time, and the oxide-containing gas is prevented from flowing to the heat insulating material 40 and other structural members at the outer periphery or below the crucible 30.
In the embodiment of the present invention, as shown in fig. 1 and 2, a second outlet 14 communicating with the chamber 11 may be further provided at the bottom of the furnace body 10, and the second outlet 14 may also discharge the gas in the chamber 11, for example, the oxide-containing gas generated in the crucible 30 is substantially completely discharged through the first outlet 13, and some gas may remain at the bottom of the chamber 11, and at this time, the gas may be discharged through the second outlet 14.
In an embodiment of the present invention, the bottom of the furnace body 10 may be provided with a plurality of second outlets 14, such as two, and the plurality of second outlets 14 may be spaced apart from each other at the bottom of the furnace body 10, so as to facilitate rapid gas discharge or gas introduction. Alternatively, the second outlet 14 may be provided adjacent to the side wall 19 of the furnace body 10, avoiding obstruction of the gas flow by the susceptor 20.
In some embodiments of the present invention, as shown in fig. 1 to 3, the furnace body 10 may be provided at the outside thereof with a first duct 15 and a second duct 16, respectively, one end of the first duct 15 may communicate with the first outlet 13, the gas flowing out of the first outlet 13 may flow out through the first duct 15, one end of the second duct 16 may communicate with the second outlet 14, the gas flowing out of the second outlet 14 may flow out through the second duct 16, the other end of the first duct 15 may communicate with the other end of the second duct 16, the gases in the first duct 15 and the second duct 16 may be merged, and the other ends of the first duct 15 and the second duct 16 may communicate with one merging pipe, respectively, through which the gas is discharged.
In other embodiments of the invention, the first outlet 13 or the first conduit 15 is provided with a first regulating valve 17 to regulate the flow of gas out of the first outlet 13, and the second outlet 14 or the second conduit 16 is provided with a second regulating valve 18 to regulate the flow of gas out of the second outlet 14. The first regulating valve 17 and the second regulating valve 18 can be adjusted according to actual needs to regulate the gas flow, and the gas flow of the first regulating valve 17 and the second regulating valve 18 can be adjusted according to the required proportion. During use, the second regulating valve 18 can be closed, so that the gas only flows out from the first outlet 13, the gas is prevented from flowing to the lower part of the crucible 20, and after the oxide generated in the crucible 20 flows out from the first outlet 13, the second regulating valve 18 can be opened again, so that the gas remained below the crucible 20 flows out from the second outlet 14. In the melting process of the polycrystalline silicon, when a large amount of oxide is generated in the melting process, the second regulating valve 18 is closed, the first regulating valve 17 is opened, and the oxide is discharged from the direction of the first outlet 13; in a process where a small amount of oxides are generated, the second regulating valve 18 may be opened and the first regulating valve 17 may be closed to allow gas to flow out of the second outlet 14, reducing damage to insulation and other structural components. If it is desired to vent other gases (e.g., inert gases) during the crystal pulling process, the first and second regulator valves 17, 18 can be opened simultaneously to facilitate rapid venting.
In the embodiment of the present invention, the heater 50 may be provided on the outer side of the crucible 30, the heat insulating material 40 may be provided between the heater 50 and the inner wall of the furnace body 10, and/or the heat insulating material may be provided on the outer side wall of the susceptor 20. For example, a heat insulating material 40 may be disposed on the inner wall of the furnace body 10 to reduce the dissipation of heat in the furnace body; the outer side wall of the base 20 may also be provided with a heat insulating material 40, so that the base 20 can be prevented from being damaged by high temperature through the heat insulating material 40, the base 20 can be prevented from being deformed due to high temperature, the base 20 can be ensured to stably rotate, and the corrosion of the gas in the chamber to the outer side wall of the base 20 can be avoided.
As shown in fig. 4, in practical application, a heater 50 may be disposed at an outer periphery of the crucible 30 to heat the polysilicon in the crucible, oxide generated from the polysilicon in the crucible 30 may be deposited on the heater 50, the deposited oxide may corrode the heater 50, and radiation of heat from the heater 50 may be reduced, in order to solve the above problem, a mounting case 51 for mounting the heater 50 may be disposed in the chamber 11, the mounting case 51 may define a mounting cavity 52 with a side opening, an opening of the mounting case 51 faces the crucible 30, the heater 50 may be disposed in the mounting cavity 52, heat may be radiated to the crucible 30 through the side opening of the mounting case 51 to heat the polysilicon, a vent pipe 53 may be disposed on the mounting case 51, one end of the vent pipe 53 may be disposed at a bottom of the mounting cavity 52, and the other end of the vent pipe 53 may be communicated with an inert gas supply device (such as nitrogen gas may be supplied), inert gas (such as nitrogen) can be introduced into the mounting cavity 52, so that the gas pressure in the mounting cavity 52 is greater than that in the cavity, gas containing oxide and other corrosive gas in the cavity 11 are prevented from entering the mounting cavity 52, oxide deposition on the heater 50 generated by polycrystalline silicon in the crucible 30 can be prevented, corrosion of the oxide on the heater 50 is avoided, meanwhile, direct radiation heating of the heater 50 on the heat insulation material 40 on the inner wall of the furnace body 10 can be reduced, the service life of the heat insulation material is prolonged, in addition, a reflecting layer can be coated on the inner side wall of the mounting shell 51 to reflect heat radiated to the reflecting layer, the heat reflected by the reflecting layer is radiated to the crucible, and the heat utilization rate of the heater is improved.
In some embodiments of the invention, the axis of the furnace 10, the axis of the susceptor 20, and the axis of the crystal pulling opening 12 are collinear, and the axis of the crucible 30 and the axis of the crystal pulling opening 12 are collinear to facilitate crystal pulling from the crystal pulling opening 12.
The embodiment of the invention also provides a crystal pulling furnace. The crystal pulling furnace according to an embodiment of the invention comprises the flow-controllable side exhaust device in the above-described embodiment. When the crystal pulling furnace provided by the embodiment of the invention is used for growing crystal bars, oxides generated in the polycrystalline silicon melting process can be discharged through the first outlet, gas containing the oxides is prevented from flowing to heat insulation materials and other structural members at the lower part of the side exhaust device, the oxides are prevented from being attached to the heat insulation materials and the other structural members, the heat insulation materials and the other structural members are prevented from being etched, the service lives of the heat insulation materials and the other structural members are prolonged, and the heat insulation effect of the heat insulation materials is ensured.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships are changed accordingly.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A controllable flow side exhaust, comprising:
the furnace body is internally limited with a cavity, and the top of the furnace body is provided with a crystal pulling opening communicated with the cavity;
a base disposed within the chamber;
the crucible is arranged on the base;
and a first outlet communicated with the cavity is arranged on the side wall of the furnace body to discharge gas in the cavity, and the first outlet is positioned above the crucible.
2. The side exhaust device according to claim 1, wherein a plurality of the first outlets are arranged on the side wall of the furnace body, and the plurality of the first outlets are uniformly distributed at intervals along the circumferential direction of the furnace body.
3. The side exhaust apparatus according to claim 1, wherein the bottom of the furnace body is provided with a second outlet communicating with the chamber.
4. The side exhaust device according to claim 3, wherein the bottom of the furnace body is provided with a plurality of second outlets which are distributed at intervals on the bottom of the furnace body.
5. The side exhaust of claim 4, wherein the second outlet is disposed adjacent a sidewall of the furnace body.
6. The side exhaust device according to claim 3, wherein a first pipeline and a second pipeline are respectively arranged outside the furnace body, one end of the first pipeline is communicated with the first outlet, one end of the second pipeline is communicated with the second outlet, and the other end of the first pipeline is communicated with the other end of the second pipeline.
7. The side exhaust of claim 6, wherein a first regulating valve is provided on the first outlet or the first conduit to regulate the flow of gas out of the first outlet.
8. The side exhaust of claim 6 or 7, wherein a second regulating valve is provided on the second outlet or the second conduit to regulate the flow of gas out of the second outlet.
9. The side exhaust device according to claim 1, wherein a heater is arranged on the outer side of the crucible, a heat insulating material is arranged between the heater and the inner wall of the furnace body, and/or a heat insulating material is arranged on the outer side wall of the base.
10. A crystal pulling furnace comprising a side exhaust as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911076441.9A CN110714222B (en) | 2019-11-06 | 2019-11-06 | Controllable side exhaust apparatus of flow and have device's crystal pulling stove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911076441.9A CN110714222B (en) | 2019-11-06 | 2019-11-06 | Controllable side exhaust apparatus of flow and have device's crystal pulling stove |
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| Publication Number | Publication Date |
|---|---|
| CN110714222A true CN110714222A (en) | 2020-01-21 |
| CN110714222B CN110714222B (en) | 2022-04-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911076441.9A Active CN110714222B (en) | 2019-11-06 | 2019-11-06 | Controllable side exhaust apparatus of flow and have device's crystal pulling stove |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112481693A (en) * | 2020-12-01 | 2021-03-12 | 西安奕斯伟硅片技术有限公司 | Crystal pulling furnace |
| CN115506017A (en) * | 2022-10-27 | 2022-12-23 | 徐州鑫晶半导体科技有限公司 | Monocrystalline silicon growth furnace and control method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1990917A (en) * | 2005-12-26 | 2007-07-04 | 北京有色金属研究总院 | Method and apparatus of clearing SiO in straight pulling silicon single crystal furnace |
| CN103255469A (en) * | 2013-06-03 | 2013-08-21 | 英利能源（中国）有限公司 | Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer |
| CN109554756A (en) * | 2018-12-27 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | The preparation method and monocrystalline silicon of a kind of single crystal pulling apparatus, monocrystalline silicon |
| CN208899038U (en) * | 2018-08-28 | 2019-05-24 | 武陟县虹桥碳素有限责任公司 | A kind of photovoltaic exhaust graphite crucible device |
-
2019
- 2019-11-06 CN CN201911076441.9A patent/CN110714222B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1990917A (en) * | 2005-12-26 | 2007-07-04 | 北京有色金属研究总院 | Method and apparatus of clearing SiO in straight pulling silicon single crystal furnace |
| CN103255469A (en) * | 2013-06-03 | 2013-08-21 | 英利能源（中国）有限公司 | Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer |
| CN208899038U (en) * | 2018-08-28 | 2019-05-24 | 武陟县虹桥碳素有限责任公司 | A kind of photovoltaic exhaust graphite crucible device |
| CN109554756A (en) * | 2018-12-27 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | The preparation method and monocrystalline silicon of a kind of single crystal pulling apparatus, monocrystalline silicon |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112481693A (en) * | 2020-12-01 | 2021-03-12 | 西安奕斯伟硅片技术有限公司 | Crystal pulling furnace |
| CN115506017A (en) * | 2022-10-27 | 2022-12-23 | 徐州鑫晶半导体科技有限公司 | Monocrystalline silicon growth furnace and control method thereof |
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| Publication number | Publication date |
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| CN110714222B (en) | 2022-04-08 |
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Effective date of registration: 20211026 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |