KR100403543B1 - ＧａＡｓ단결정웨이퍼 및 ＧａＡｓ액정에피택셜웨이퍼 - Google Patents
ＧａＡｓ단결정웨이퍼 및 ＧａＡｓ액정에피택셜웨이퍼 Download PDFInfo
- Publication number
- KR100403543B1 KR100403543B1 KR10-2000-0042997A KR20000042997A KR100403543B1 KR 100403543 B1 KR100403543 B1 KR 100403543B1 KR 20000042997 A KR20000042997 A KR 20000042997A KR 100403543 B1 KR100403543 B1 KR 100403543B1
- Authority
- KR
- South Korea
- Prior art keywords
- gaas
- type
- epitaxial
- wafer
- growth
- Prior art date
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 114
- 239000007791 liquid phase Substances 0.000 title claims abstract description 16
- 239000013078 crystal Substances 0.000 title claims description 20
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 69
- 239000007788 liquid Substances 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 abstract description 68
- 238000000034 method Methods 0.000 abstract description 21
- 239000012535 impurity Substances 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 40
- 239000000243 solution Substances 0.000 description 17
- 230000005856 abnormality Effects 0.000 description 12
- 239000011247 coating layer Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 231100000518 lethal Toxicity 0.000 description 1
- 230000001665 lethal effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000002020 sage Nutrition 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11218257A JP2001048694A (ja) | 1999-08-02 | 1999-08-02 | ＧａＡｓ単結晶ウエハ及びＧａＡｓ液相エピタキシャルウエハ |
| JP1999-218257 | 1999-08-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010021132A KR20010021132A (ko) | 2001-03-15 |
| KR100403543B1 true KR100403543B1 (ko) | 2003-11-01 |
Family
ID=16717053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2000-0042997A KR100403543B1 (ko) | 1999-08-02 | 2000-07-26 | ＧａＡｓ단결정웨이퍼 및 ＧａＡｓ액정에피택셜웨이퍼 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2001048694A (ja) |
| KR (1) | KR100403543B1 (ja) |
| DE (1) | DE10036672B4 (ja) |
| TW (1) | TW451308B (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270516A (ja) | 2001-03-07 | 2002-09-20 | Nec Corp | Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子 |
| CN101591811B (zh) * | 2009-07-03 | 2011-11-09 | 中国科学院上海微系统与信息技术研究所 | Gsmbe制备ⅲ-ⅴ化合物半导体纳米管结构材料的方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970067547A (ko) * | 1995-03-20 | 1997-10-13 | 후지이 아키히로 | 경사표면 실리콘 웨이퍼, 그 형성방법 및 반도체소자 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS571221A (en) * | 1980-06-03 | 1982-01-06 | Fujitsu Ltd | Monolithic composite semiconductor device and its manufacture |
| JPS59117111A (ja) * | 1982-12-23 | 1984-07-06 | Mitsubishi Electric Corp | 化合物半導体の液相成長法 |
| JP3316083B2 (ja) * | 1994-04-28 | 2002-08-19 | 住友電気工業株式会社 | 液相エピタキシャル成長用ＧａＡｓ単結晶基板及び液相エピタキシャル成長法 |
| JPH0918052A (ja) * | 1995-06-29 | 1997-01-17 | Hitachi Cable Ltd | エピタキシャルウェハ及び発光ダイオード |
| JP2914246B2 (ja) * | 1995-10-12 | 1999-06-28 | 昭和電工株式会社 | エピタキシャルウエハおよび半導体発光素子 |
-
1999
- 1999-08-02 JP JP11218257A patent/JP2001048694A/ja active Pending
-
2000
- 2000-07-19 TW TW089114450A patent/TW451308B/zh not_active IP Right Cessation
- 2000-07-26 KR KR10-2000-0042997A patent/KR100403543B1/ko active IP Right Grant
- 2000-07-27 DE DE10036672A patent/DE10036672B4/de not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970067547A (ko) * | 1995-03-20 | 1997-10-13 | 후지이 아키히로 | 경사표면 실리콘 웨이퍼, 그 형성방법 및 반도체소자 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW451308B (en) | 2001-08-21 |
| DE10036672B4 (de) | 2006-01-19 |
| DE10036672A1 (de) | 2001-02-15 |
| KR20010021132A (ko) | 2001-03-15 |
| JP2001048694A (ja) | 2001-02-20 |
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