KR100398704B1 - 실리콘 웨이퍼 제조 방법 - Google Patents
실리콘 웨이퍼 제조 방법 Download PDFInfo
- Publication number
- KR100398704B1 KR100398704B1 KR10-2001-0086932A KR20010086932A KR100398704B1 KR 100398704 B1 KR100398704 B1 KR 100398704B1 KR 20010086932 A KR20010086932 A KR 20010086932A KR 100398704 B1 KR100398704 B1 KR 100398704B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- polishing
- lapping
- flatness
- manufacturing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (3)
- 소정의 실리콘 잉곳으로부터 웨이퍼를 제조하는 방법에 있어서,(a) 상기 실리콘 잉곳을 웨이퍼 형태로 얇게 절단하는 슬라이싱 공정;(b) 육각판상형의 연마 분말이 혼합된 연마액에 의하여 상기 절단된 웨이퍼의 양면을 연마하는 래핑공정;(c) 상기 래핑 된 웨이퍼 내부의 손상층을 제거하는 식각 공정; 및(d) 상기 식각 된 웨이퍼 표면을 경면 연마하는 폴리싱 공정을 포함하는 실리콘 웨이퍼 제조 방법.
- 제 1항에 있어서,상기 (b) 공정은, 웨이퍼의 롤오프값이 음의 값을 가지며, 그 범위가 -0.2㎛내지 -0.5㎛ 되도록 하는 것을 특징으로 하는 실리콘 웨이퍼 제조 방법.
- 제 1항에 있어서,상기 (b) 공정은, 웨이퍼의 평탄도를 나타내는 TTV가 1㎛ 이하이고, SBIR이 0.5㎛ 이하가 되도록 하는 것을 특징으로 하는 실리콘 웨이퍼 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0086932A KR100398704B1 (ko) | 2001-12-28 | 2001-12-28 | 실리콘 웨이퍼 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0086932A KR100398704B1 (ko) | 2001-12-28 | 2001-12-28 | 실리콘 웨이퍼 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030056658A KR20030056658A (ko) | 2003-07-04 |
KR100398704B1 true KR100398704B1 (ko) | 2003-09-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0086932A KR100398704B1 (ko) | 2001-12-28 | 2001-12-28 | 실리콘 웨이퍼 제조 방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100398704B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100914605B1 (ko) * | 2007-12-27 | 2009-08-31 | 주식회사 실트론 | 나노토포그라피가 개선된 웨이퍼 제조 방법 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100927306B1 (ko) * | 2008-04-11 | 2009-11-18 | 주식회사 실트론 | 나노토포그라피가 개선된 웨이퍼 제조 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065611A (ja) * | 1992-06-16 | 1994-01-14 | Mitsubishi Materials Corp | シリコンウェーハの製造方法 |
JPH10112450A (ja) * | 1996-10-04 | 1998-04-28 | Komatsu Electron Metals Co Ltd | 半導体ウェハの製造方法 |
US6162730A (en) * | 1995-02-28 | 2000-12-19 | Komatsu Electronic Metals Co., Ltd. | Method for fabricating semiconductor wafers |
-
2001
- 2001-12-28 KR KR10-2001-0086932A patent/KR100398704B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065611A (ja) * | 1992-06-16 | 1994-01-14 | Mitsubishi Materials Corp | シリコンウェーハの製造方法 |
US6162730A (en) * | 1995-02-28 | 2000-12-19 | Komatsu Electronic Metals Co., Ltd. | Method for fabricating semiconductor wafers |
JPH10112450A (ja) * | 1996-10-04 | 1998-04-28 | Komatsu Electron Metals Co Ltd | 半導体ウェハの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100914605B1 (ko) * | 2007-12-27 | 2009-08-31 | 주식회사 실트론 | 나노토포그라피가 개선된 웨이퍼 제조 방법 |
Also Published As
Publication number | Publication date |
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KR20030056658A (ko) | 2003-07-04 |
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