KR100372810B1 - 시료의분리장치및그분리방법과기판의제조방법 - Google Patents

시료의분리장치및그분리방법과기판의제조방법 Download PDF

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Publication number
KR100372810B1
KR100372810B1 KR10-1998-0022476A KR19980022476A KR100372810B1 KR 100372810 B1 KR100372810 B1 KR 100372810B1 KR 19980022476 A KR19980022476 A KR 19980022476A KR 100372810 B1 KR100372810 B1 KR 100372810B1
Authority
KR
South Korea
Prior art keywords
sample
substrate
liquid
jet
separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1998-0022476A
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English (en)
Korean (ko)
Other versions
KR19990007019A (ko
Inventor
카즈아키 오오미
타카오 요네하라
키요후미 사카구치
카즈타카 야나기타
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR19990007019A publication Critical patent/KR19990007019A/ko
Application granted granted Critical
Publication of KR100372810B1 publication Critical patent/KR100372810B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0428Apparatus for mechanical treatment or grinding or cutting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19Delaminating means
    • Y10T156/1928Differential fluid pressure delaminating means
    • Y10T156/1933Spraying delaminating means [e.g., atomizer, etc.
    • Y10T156/1939Air blasting delaminating means]

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Centrifugal Separators (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Combined Means For Separation Of Solids (AREA)
  • Weting (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
KR10-1998-0022476A 1997-06-16 1998-06-16 시료의분리장치및그분리방법과기판의제조방법 Expired - Fee Related KR100372810B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP97-159038 1997-06-16
JP1997-159038 1997-06-16
JP9159038A JPH115064A (ja) 1997-06-16 1997-06-16 試料の分離装置及びその方法並びに基板の製造方法

Publications (2)

Publication Number Publication Date
KR19990007019A KR19990007019A (ko) 1999-01-25
KR100372810B1 true KR100372810B1 (ko) 2003-04-21

Family

ID=15684894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0022476A Expired - Fee Related KR100372810B1 (ko) 1997-06-16 1998-06-16 시료의분리장치및그분리방법과기판의제조방법

Country Status (9)

Country Link
US (1) US6427747B1 (https=)
EP (1) EP0886300A3 (https=)
JP (1) JPH115064A (https=)
KR (1) KR100372810B1 (https=)
CN (1) CN1208672A (https=)
AU (1) AU724851B2 (https=)
CA (1) CA2240701C (https=)
SG (1) SG67512A1 (https=)
TW (1) TW398039B (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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US6382292B1 (en) * 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
US6418999B1 (en) * 1997-12-26 2002-07-16 Cannon Kabushiki Kaisha Sample separating apparatus and method, and substrate manufacturing method
US6383890B2 (en) 1997-12-26 2002-05-07 Canon Kabushiki Kaisha Wafer bonding method, apparatus and vacuum chuck
JPH11243050A (ja) 1998-02-24 1999-09-07 Canon Inc 露光装置
US6540861B2 (en) 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
JP2000150611A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
JP4343295B2 (ja) * 1998-11-06 2009-10-14 キヤノン株式会社 試料の処理システム
US6672358B2 (en) 1998-11-06 2004-01-06 Canon Kabushiki Kaisha Sample processing system
TW484184B (en) 1998-11-06 2002-04-21 Canon Kk Sample separating apparatus and method, and substrate manufacturing method
JP4365920B2 (ja) * 1999-02-02 2009-11-18 キヤノン株式会社 分離方法及び半導体基板の製造方法
JP2000223683A (ja) * 1999-02-02 2000-08-11 Canon Inc 複合部材及びその分離方法、貼り合わせ基板及びその分離方法、移設層の移設方法、並びにsoi基板の製造方法
FR2796491B1 (fr) * 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
US6221740B1 (en) * 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
JP2002075917A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
JP4708577B2 (ja) 2001-01-31 2011-06-22 キヤノン株式会社 薄膜半導体装置の製造方法
JP2002229473A (ja) 2001-01-31 2002-08-14 Canon Inc 表示装置の製造方法
JP4803884B2 (ja) 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
DE10108369A1 (de) * 2001-02-21 2002-08-29 B L E Lab Equipment Gmbh Verfahren und Vorrichtung zum Ablösen eines Halbleiterwafers von einem Träger
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
JP2002353423A (ja) * 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び処理方法
JP2003017668A (ja) * 2001-06-29 2003-01-17 Canon Inc 部材の分離方法及び分離装置
JP2005311199A (ja) * 2004-04-23 2005-11-04 Canon Inc 基板の製造方法
JP2008135690A (ja) * 2006-10-30 2008-06-12 Denso Corp 半導体力学量センサおよびその製造方法
CN104025277A (zh) 2011-10-31 2014-09-03 Memc电子材料有限公司 用于劈裂键合晶片结构的夹持装置和劈裂方法
KR102082271B1 (ko) * 2013-05-24 2020-04-16 엘지디스플레이 주식회사 캐리어기판 분리 시스템 및 분리 방법
KR101898121B1 (ko) * 2015-10-22 2018-09-12 저지앙 마이크로테크 머테리얼 컴퍼니 리미티드 워크피스 처리 방법 및 그러한 방법을 위해 설계된 장치
US11538698B2 (en) * 2019-09-27 2022-12-27 Globalwafers Co., Ltd. Cleave systems having spring members for cleaving a semiconductor structure and methods for cleaving such structures
JP7309191B2 (ja) * 2019-11-06 2023-07-18 中村留精密工業株式会社 ウェハー分割装置
CN121890306A (zh) 2023-09-29 2026-04-17 芝浦机械电子株式会社 基板分离装置
CN121157118A (zh) * 2025-11-12 2025-12-19 江苏无锡经纬天地半导体科技有限公司 一种机械手的检测方法、使用方法、检测装置和半导体设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2699852A1 (fr) * 1992-12-29 1994-07-01 Gaz De France Procédé et dispositif d'usinage à jet de fluide haute pression asservi.
KR970023665A (ko) * 1995-10-31 1997-05-30 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법

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US3147142A (en) * 1961-01-25 1964-09-01 Frank S Rudo Precision coating devices
US3583634A (en) * 1968-12-02 1971-06-08 Fmc Corp Spray nozzle
US3664586A (en) * 1970-07-06 1972-05-23 Charles R Harris Sr Sprinkler head
US4326553A (en) * 1980-08-28 1982-04-27 Rca Corporation Megasonic jet cleaner apparatus
DE4100526A1 (de) * 1991-01-10 1992-07-16 Wacker Chemitronic Vorrichtung und verfahren zum automatischen vereinzeln von gestapelten scheiben
US5255853A (en) * 1991-04-02 1993-10-26 Ingersoll-Rand Company Adjustable fluid jet cleaner
US5232155A (en) * 1991-05-17 1993-08-03 Ingersoll-Rand Company Integrity sensor for fluid jet nozzle
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JPH098095A (ja) * 1995-06-22 1997-01-10 Fuji Electric Co Ltd 積層半導体ウエハの分離装置およびその分離方法
JPH1022238A (ja) * 1996-06-29 1998-01-23 Komatsu Electron Metals Co Ltd 半導体ウェハのエアーブロー装置
US6382292B1 (en) 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2699852A1 (fr) * 1992-12-29 1994-07-01 Gaz De France Procédé et dispositif d'usinage à jet de fluide haute pression asservi.
KR970023665A (ko) * 1995-10-31 1997-05-30 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법

Also Published As

Publication number Publication date
JPH115064A (ja) 1999-01-12
AU724851B2 (en) 2000-10-05
US6427747B1 (en) 2002-08-06
CA2240701C (en) 2003-02-04
CN1208672A (zh) 1999-02-24
CA2240701A1 (en) 1998-12-16
TW398039B (en) 2000-07-11
KR19990007019A (ko) 1999-01-25
SG67512A1 (en) 1999-09-21
AU7186998A (en) 1998-12-17
EP0886300A3 (en) 2000-01-26
EP0886300A2 (en) 1998-12-23

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