KR100325974B1 - The equipment and pluting system nickel water a semiconductor - Google Patents

The equipment and pluting system nickel water a semiconductor Download PDF

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Publication number
KR100325974B1
KR100325974B1 KR1019990023901A KR19990023901A KR100325974B1 KR 100325974 B1 KR100325974 B1 KR 100325974B1 KR 1019990023901 A KR1019990023901 A KR 1019990023901A KR 19990023901 A KR19990023901 A KR 19990023901A KR 100325974 B1 KR100325974 B1 KR 100325974B1
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wafer
plating
flow
plate
nickel
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KR1019990023901A
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Korean (ko)
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KR19990078598A (en
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이동호
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한수철
주식회사 이넥트론
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE: A nickel plating apparatus is provided to allow uniform thickness of the nickel which is plated on a semiconductor wafer. CONSTITUTION: The plating bath(1) includes a high pressure injection nozzle(3) and a movable jig(11) for holding a semiconductor wafer so that a nickel plating solution is injected to the wafer. An electrode(2) is provided at both sides of the plating bath(1) and a discharge pipe is provided at the bottom portion of the bath. The nickel plating solution circulates by operation of a pump(6) through a filter. At the top portion of the bath, a movable plate(8) is provided to mount a fly bar(7) rocking by a motor. The movable jig(11) is installed on the fly bar(7).

Description

반도체용 웨이퍼의 니켈 도금장치{THE EQUIPMENT AND PLUTING SYSTEM NICKEL WATER A SEMICONDUCTOR}Nickel Plating Equipment for Semiconductor Wafers {THE EQUIPMENT AND PLUTING SYSTEM NICKEL WATER A SEMICONDUCTOR}

본 발명은 반도체용 웨이퍼(WAFER)의 표면에 니켈(NI)을 도금하는 장치에 관한 것으로서, 웨이퍼에 형성되어 있는 홀에 니켈을 도금할 경우 니켈을 에어분사방식으로 분사시켜 도금하므로서 웨이퍼에 도금되는 홀의 모양이 한쪽으로 기울어지는 것을 방지하고 또한 도금되는 니켈의 두께를 일정하게 할 수 있도록 하는데 그 목적이 있는 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for plating nickel (NI) on the surface of a wafer for semiconductors (WAFER). When nickel is plated in holes formed in the wafer, the nickel is sprayed by an air spray method and plated on the wafer. The purpose is to prevent the shape of the hole from tilting to one side and to make the thickness of nickel plated constant.

일반적으로 반도체용 기판을 도금하는 방법이 도금조의 상부에서 플라이바를 이용하여 제품을 내부로 삽입시킨 후 에어분사방식을 이용하여 도금을 하여왔다.In general, a method of plating a substrate for a semiconductor has been plated using an air spray method after inserting a product into the inside using a fly bar at the top of the plating bath.

즉 상기의 방법은 도금조의 하단에 에어분사관을 설치하고 도금조의 상부에는 제품을 고정하고 있는 플라이바를 설치하여 플라이바가 제품을 물고 도금조의 내부로 삽입되면 에어관이 에어를 분사시킴으로서 도금을 하는 방식이였다.That is, the above method is to install the air spray pipe at the bottom of the plating tank and to install the fly bar fixing the product at the upper part of the plating bath, when the flybar bites the product and is inserted into the plating bath, the air pipe sprays the air by plating This was.

그러나 상기와 같은 방법은 일반적인 기판을 도금할 때에는 사용이 용이하였으나 원형으로 형성된 반도체용 웨이퍼를 도금할 때에는 에어가 도금조의 하단에서 상단으로 분사됨으로서 에어가 상단으로 상승하는 힘과 에어가 도금조에서 지그재그로 흔들리면서 상승하게 되므로서 도금 후 홀의 모양이 변형이 발생하게 되는 큰 문제점이 있었다.However, the method described above was easy to use when plating a general substrate. However, when plating a semiconductor wafer formed in a circular shape, air is injected from the bottom of the plating bath to the top so that the air rises to the top and the air is zigzag in the plating bath. There was a big problem that the deformation of the hole occurs after plating as it is rising while shaking.

즉 상기의 방법을 이용하여 도금을 할 경우 에어가 하단에서 상단으로 분사되므로서 웨이퍼에 형성되어 있는 홀이 정확한 원형이 아니라 상하부가 좌우 측보다 적은 타원형으로 도금되므로서 불량이 발생하게 되는 단점이 있으며, 이로 인하여 고가의 웨이퍼를 폐기하게 되는 문제점이 있었다.In other words, when plating using the above method, air is injected from the bottom to the top, so that holes formed in the wafer are not precisely circular, but the upper and lower parts are plated in an elliptical shape smaller than the left and right sides, thereby causing a defect. As a result, there is a problem in that expensive wafers are discarded.

상기와 같이 종래의 도금방법으로 웨이퍼를 도금할 경우 도금두께가 29±1㎛이고, 또한 웨이퍼의 표면에는 표면거침이 있어서는 아니되며, 도금 후 홀의 모양이 정확한 원형이 유지되어야 하였으나, 종래의 에어 토출 방식을 이용하여 도금을 할 경우 도금 두께편차가 29±10㎛의 오차가 발생하게 되므로 웨이퍼를 기존의 니켈도금 방식으로 품질상태 유지가 불가능하게 되므로서 국내에서는 제조가 불가능하여 외국의 수입에 의존하게 되므로서 불필요한 외화의 낭비를 초래하게 되는 문제점이 있었다.When the wafer is plated by the conventional plating method as described above, the plating thickness is 29 ± 1 μm, and the surface of the wafer does not have surface roughness. When plating using this method, the plating thickness deviation is 29 ± 10㎛, so it is impossible to maintain the quality state of the wafer by the conventional nickel plating method. Therefore, there was a problem that causes unnecessary waste of foreign currency.

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출한 것으로서, 도금조의 내부 양측에 양극와 니켈분사파이프를 설치하고 중간부에 제품이 삽입 되게 하여 니켈이 제품을 향하여 고압으로 스프레이방식으로 분사되도록 함과 동시에 제품을 고정하고 있는 프라이바가 전후로 유동되게 하여 니켈이 웨이퍼에 균일하게 도금되도록 하므로서 웨이퍼에 도금되는 니켈의 두께를 일정하게 하고, 또한 홀에 도금되는 니켈의 모양이 원형으로 형성되도록 한 것으로서, 이하 본 발명을 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.The present invention has been made in order to solve the above problems, the anode and nickel spray pipes are installed on both sides of the plating bath and the product is inserted in the middle portion so that the nickel is sprayed at a high pressure toward the product at the same time spraying As the fryer holding the product flows back and forth to allow nickel to be uniformly plated on the wafer, the thickness of nickel plated on the wafer is made constant, and the shape of the nickel plated on the hole is formed in a circular shape. The invention is described in detail by the accompanying drawings as follows.

도 1 은 본 발명의 전체라인을 보인 개략 사시도1 is a schematic perspective view showing the entire line of the present invention;

도 2 는 본 발명의 측 단면도2 is a side cross-sectional view of the present invention.

도 3 은 본 발명의 지그고정판이 유동되는 상태를 보인 개략 정 단면도Figure 3 is a schematic sectional view showing a state in which the jig fixing plate of the present invention flows

도 4는 본 발명의 개략 작동 블록도4 is a schematic operational block diagram of the present invention;

도 5는 본 발명의 웨이퍼고정용 지그의 분리 사시도5 is an exploded perspective view of the jig for fixing a wafer of the present invention.

도 6은 본 발명 지그의 측 단면도6 is a side cross-sectional view of the jig of the present invention.

도 7은 본 발명의 웨이퍼 고정장치의 실시예를 보인 개략 정 단면도7 is a schematic cross-sectional view showing an embodiment of the wafer holding device of the present invention.

** 도면의 주요 부분에 대한 부호의 설명 **** Description of symbols for the main parts of the drawing **

(1) 도금조 (2) 전극 (3) 고압분사관(1) Plating baths (2) Electrodes (3) High pressure jets

(4) 배수관 (5) 여과기 (6) 펌프(4) Drainpipe (5) Filter (6) Pump

(7) 플라이바 (8) 유동판 (9)모우터(7) Fly Bar (8) Fluid Plate (9) Motor

(10) 유동장치 (11) 웨이퍼 고정용 지그 (12) 체결관(10) Flow device (11) Wafer fixing jig (12) Fastening pipe

(13) 고정너트 (14) 가이드레일 (15) 회전판(13) Locking nut (14) Guide rail (15) Swivel plate

(16) 로드 (17) 체결공 (18) 전면판(16) Rod (17) Fastener (18) Front panel

(19) 후면판 (20) 삽입홈 (21) 고정구(19) Backplane (20) Slot (21) Fixture

(22) 손잡이 (23) 압착돌기 (24) 패킹(22) Handle (23) Crimp (24) Packing

(25) 지그고정구(25) Jig Fixture

도금조의 내부 좌우측에 전극과 분사공이 형성되어 있는 분사관을 설치하고, 중앙부에 웨이퍼를 고정한 지그를 설치하여 니켈이 제품을 향하여 고압으로 분사하므로서 도금되도록 하여서 된 것이다.The injection tube is provided with electrodes and injection holes in the left and right sides of the plating bath, and the jig fixing the wafer is installed in the center to allow nickel to be plated by spraying at high pressure toward the product.

즉 도금조(1) 내부의 좌우 양측에 전극(2)을 설치하고 그 내측에는 수개의 분사공이 형성되어 있는 고압분사관(3)을 설치하며, 바닥면에는 배수관(4)을 설치하여 도금조(1)에 있는 도금액의 이물질을 여과하는 여과기(5)를 거친 다음 펌프(6)에 의하여 순환 되도록 하고, 도금조(1)의 상부에는 플라이바(7)가 고정되는 유동판(8)을 설치하여 모우터(9)에 의하여 전후로 유동 되도록 된 유동장치(10)를 설치하며 플라이바(7)에는 웨이퍼 고정용 지그(11)를 설치하여서 된 것이다.That is, the electrode 2 is installed on both left and right sides inside the plating tank 1, and the high pressure injection pipe 3 in which several injection holes are formed is installed inside the plating bath, and the drain pipe 4 is installed on the bottom surface of the plating bath. After passing through the filter (5) for filtering the foreign matter of the plating liquid in (1) and then circulated by the pump (6), the flow plate (8) on which the fly bar (7) is fixed to the upper portion of the plating bath (1) By installing the flow device 10 to be moved back and forth by the motor (9) and the fly bar (7) is to install the wafer fixing jig (11).

한편 상기 고압분사관(3)은 도금조(1)의 상부 양측 전후에 외측에 나사부가 형성되어 있는 체결관(12)을 설치하고, 고압분사관(3)의 상부 양측에는 내측에 나사부가 형성되어 있는 고정너트(13)를 체결하여 분해되거나 조립되도록 하여서 된 것이다.On the other hand, the high-pressure injection pipe (3) is provided with a fastening tube (12) having a threaded portion formed on the outside before and after both upper sides of the plating tank (1), the screw portion is formed on both sides of the upper portion of the high-pressure injection pipe (3) It is intended to be disassembled or assembled by fastening the fixing nut 13.

상기 유동장치(10)는 도금조(1)의 상부 양측에 가이드레일(14)을 설치하고, 그 상부에는 로울러가 설치되어 있는 유동판(8)을 체결하여 좌우로 유동될 수 있게 하며, 도금조(1)의 상부 일측에는 모우터(9)를 설치하되 모우터의 축에는 회전판(15)을 체결하며 유동판(8)의 중앙부에는 상하로 회전될 수 있는 로드(16)를 설치하되 로드(16)의 끝부분을 회전판(15)의 측면에 형성된 체결공(17)에 회전 가능하게 체결하여서 된 것이다.The flow apparatus 10 is provided with guide rails 14 on both sides of the upper part of the plating tank 1, and fastens the flow plate 8 having a roller installed thereon, so that the flow device 10 can flow from side to side, and plating Install a motor (9) on the upper one side of the jaw (1), but fasten the rotating plate 15 to the shaft of the motor and install a rod (16) that can be rotated up and down in the center of the flow plate (8) The end of 16 is to be rotatably fastened to the fastening hole 17 formed on the side of the rotary plate (15).

한편 제품의 전후로 흔들리는 거리를 조절하고자 할 때에는 회전판(15)에 형성되어 있는 체결공(17)을 모우터(9)의 중심 축에는 가깝거나 멀게 수개를 형성하여 필요한 곳에 로드(16)를 체결하여 조절하면 된다.On the other hand, if you want to adjust the distance to shake back and forth of the product to form a number of fastening holes 17 formed in the rotating plate 15 near or far to the central axis of the motor (9) to fasten the rod 16 where necessary You can adjust it.

상기 웨이퍼고정용 지그(11)는 전면판(18)과 후면판(19)을 분해 조립식으로 구성하되 전면판(18)의 상측 중앙부에 삽입홈(20)을 형성하여 고정구(21)의 손잡이(22)가 삽입되게 하고, 후면판(19)의 상부 중앙부에는 압착돌기(23)를 형성하고, 중앙부에는 패킹(24)을 삽입 체결하여서 된 것이다.The wafer fixing jig 11 is configured to disassemble the front plate 18 and the rear plate 19, but the insertion groove 20 in the upper center of the front plate 18 to form a handle (21) 22 is inserted, and the pressing projection 23 is formed in the upper central portion of the rear plate 19, and the packing 24 is inserted into and fastened to the central portion.

한편 상기 웨이퍼고정용 지그(11)를 별도의 지그고정구(25)에 수개를 고정하고, 지그 고정구(25)는 유동판(8)에 설치되어 있는 플라이바(7)에 고정하여 한번에 대량으로 도금을 할 수 있도록 하여도 된다.Meanwhile, the wafer fixing jig 11 is fixed to several jig fixtures 25, and the jig fixture 25 is fixed to the fly bar 7 installed on the flow plate 8 to plate a large amount at a time. You may be able to.

상기와 같이 된 본 발명의 작용을 설명하면 다음과 같다.Referring to the operation of the present invention as described above is as follows.

본 발명을 작동시키고자 할 때에는 도금조(1)의 내부 양측에 고압분사관(3)을 설치한 다음 유동판(8)의 일측 중앙부에 설치되어 있는 로드(16)를 회전판(15)에 체결하여 좌우로 유동되도록 하되 유동판의 전후로 유동되는 길이는 회전판(15)의 측면에 형성되어 있는 체결공(17)을 이용하여 조절한다.In order to operate the present invention, the high pressure injection pipe 3 is installed on both sides of the plating bath 1, and then the rod 16, which is installed at the central portion of one side of the flow plate 8, is fastened to the rotary plate 15. The left and right flows to adjust the length of the flow back and forth by using the fastening hole 17 is formed on the side of the rotating plate (15).

한편 도 5에서와 같이 도금을 하고자 하는 웨이퍼는 웨이퍼고정용 지그(11)를 분리한 다음 패킹(24)과 고정구(21)사이에 웨이퍼를 올려놓고, 이 상태에서 전면판(18)을 대고 압착하여 고정볼트와 너트를 이용하여 압착 고정하면 되는 것이다.Meanwhile, as shown in FIG. 5, the wafer to be plated is separated from the wafer fixing jig 11, and then the wafer is placed between the packing 24 and the fixture 21. In this state, the wafer is pressed against the front plate 18. Press and fasten using fixing bolts and nuts.

이때 전면판(18)의 상부 중앙부에 형성되어 있는 삽입홈(20)에 고정구(21)의손잡이부(22)가 삽입하게 되고, 이 상태에서 후면판(19)의 상측 중앙부에 형성되어 있는 압착돌기(23)가 고정구(21)를 압착하는 상태에서 지그(11)의 가장지리에 위치한 고정부에 볼트와 너트에 의하여 고정하기 때문에 웨이퍼가 패킹(24)과 고정구(21)의 사이에서 압착되어 고정하게 되는 것이다.At this time, the handle portion 22 of the fastener 21 is inserted into the insertion groove 20 formed in the upper center portion of the front plate 18, and in this state the crimp formed in the upper center portion of the rear plate 19 In the state where the protrusion 23 compresses the fixture 21, the wafer is fixed between the packing 24 and the fixture 21 because the bolt and nut are fixed to the fixture located at the edge of the jig 11. It will be fixed.

상기와 같은 상태에서 웨이퍼를 플라이바(7)에 고정한 다음 플라이바(7)를 도금조(1)의 내부에 삽입하면 펌프(6)에 의하여 도금조(1)의 내부 양측에 설치되어 있는 고압 분사관(3)에서 니켈 도금액이 분사하게 되고 이 분사되는 니켈 도금액에 의하여 웨이퍼가 도금되며, 웨이퍼에 도금되는 니켈의 두께는 압력이나 전류 및 시간차를 이용하여 설정하면 된다.After fixing the wafer to the fly bar 7 in the above-described state, and inserting the fly bar 7 into the plating bath 1, the high pressure is provided on both sides of the plating bath 1 by the pump 6. The nickel plating liquid is injected from the injection pipe 3, and the wafer is plated by the nickel plating liquid injected. The thickness of nickel plated on the wafer may be set using pressure, current, and time difference.

즉 도 3 에서와 같이 고압분사관(3)에서 도금액이 분사됨과 동시에 도금조(1)의 일측에 설치되어 있는 모우터(9)가 작동하게 되고, 이로 인하여 모우터(9)의 회전축에 체결되어 있는 회전판(15)에 유동판(8)의 중앙부에 설치되어 있는 로드(16)가 체결되어 있기 때문에 유동판(8)이 전후로 유동하게 되고, 이 상태에서 웨이퍼에 니켈이 도금하게 되는 것이다..That is, as shown in FIG. 3, the plating liquid is injected from the high pressure injection pipe 3 and at the same time, the motor 9 installed on one side of the plating bath 1 is operated, thereby fastening to the rotating shaft of the motor 9. Since the rod 16 provided in the center portion of the flow plate 8 is fastened to the rotating plate 15, the flow plate 8 flows back and forth, and nickel is plated on the wafer in this state. .

한편 도 7 에서와 같이 웨이퍼를 고정하고 있는 지그(11) 수개를 별도의 지그 고정구(25)에 고정하고, 이 상태에서 지그고정구(25)를 도금조(1)의 내부에 삽입시키면 상기의 방식에 의하여 도금하게 되므로 한번에 대량으로 도금을 할 수가 있는 것이다.On the other hand, as shown in Figure 7, the jig 11 holding the wafer is fixed to a separate jig fixture 25, and in this state the jig fixture 25 is inserted into the plating bath 1 in the above manner Since it is plated by a large amount can be plated at a time.

이상과 같이 본 발명은 도금조의 내부 양측에 양극와 니켈분사파이프를 설치하고 중간부에 제품이 삽입 되게 하여 니켈 도금액이 제품을 향하여 고압의 스프레이방식으로 분사되도록 함과 동시에 제품을 고정하고 있는 플라이바가 전후로 유동되게 하여 니켈이 웨이퍼에 균일하게 도금되도록 한 것으로서, 웨이퍼에 도금된 니켈의 두께를 일정하게 하고, 또한 홀에 도금되는 니켈의 모양이 원형으로 형성되어 불량발생을 최소로 하였으며, 도금의 두께를 일정하게 함으로서 도금부를 세척하는 횟수를 줄이므로서 제작시간을 절감하고, 수입에 의존하던 반도체용 웨이퍼를 국산화 하므로서 불필요한 외화의 낭비를 방지하고 역으로 웨이퍼를 수출할 수가 있는 유용한 발명인 것이다.상기에서는 본 발명을 바람직한 실시 예를 참조하여 설명하였지만, 해당 기술 분야의 숙련된 당업자는 하기의 특허 청구의 범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있다.As described above, the present invention installs the anode and the nickel spray pipes on both sides of the plating bath, and the product is inserted in the middle portion so that the nickel plating solution is sprayed by the high pressure spray method toward the product and at the same time, the fly bar fixing the product back and forth. Nickel is uniformly plated on the wafer by the flow, and the thickness of nickel plated on the wafer is constant, and the shape of nickel plated in the hole is formed in a circular shape to minimize defects. It is a useful invention that can reduce the number of times to wash the plated portion by reducing the manufacturing time, localize the semiconductor wafer that was reliant on imports, prevent unnecessary waste of foreign currency and reversely export the wafer. Although the invention has been described with reference to the preferred embodiments, Those skilled in the art can make various modifications and changes to the present invention without departing from the spirit and scope of the invention as set forth in the claims below.

Claims (6)

도금조의 내부 좌우측에 분사관을 설치하고, 도조금의 중앙부에는 웨이퍼를 고정한 유동식 지그를 설치하여 니켈 도금액이 제품을 향하여 고압으로 분사하여 도금되도록 하여서 된 것에 있어서, 도금조(1) 내부의 좌우 양측에 전극(2)을 설치하고 그 내측에는 수개의 분사공이 형성되어 있는 고압분사관(3)을 설치하며, 바닥면에는 배수관(4)을 설치하여 도금조(1)에 있는 도금액의 이물질을 여과하는 여과기(5)를 거친 다음 펌프(6)에 의하여 순환 되도록 하고, 도금조(1)의 상부에는 플라이바(7)가 고정되는 유동판(8)을 설치하여 모우터(9)에 의하여 전후로 유동 되도록 된 유동장치(10)를 설치하며 플라이바(7)에는 웨이퍼 고정용 지그(11)를 설치하여서 된 것을 특징으로 하는 반도체용 웨이퍼의 니켈 도금장치.Injecting pipes are installed on the inner left and right sides of the plating bath, and a floating jig fixing the wafer is installed in the center of the plating bath so that the nickel plating liquid is sprayed at a high pressure toward the product to be plated. An electrode 2 is installed at the inside thereof, and a high-pressure injection pipe 3 having several injection holes formed therein is installed therein, and a drain pipe 4 is installed at the bottom surface to filter foreign substances in the plating solution in the plating bath 1. After passing through the filter (5) to be circulated by the pump (6), the flow plate (8) to which the fly bar (7) is fixed to the upper portion of the plating tank (1) by the motor (9) back and forth Nickel plating apparatus for a semiconductor wafer, characterized in that the flow device 10 is installed to flow and the fly bar (7) is provided with a wafer fixing jig (11). 제 1 항에 있어서, 고압분사관(3)은 도금조(1)의 상부 양측 전후에 체결관(12)을 설치하되 체결관(12)의 외측에 나사부를 형성하고, 고압분사관(3)의 상부 양측에는 내측에 나사부가 형성되어 있는 고정너트(13)를 체결하여 분해되거나 조립되도록 하여서 된 것을 특징으로 하는 반도체용 웨이퍼의 니켈 도금장치.The high-pressure injection pipe (3) according to claim 1, wherein the high-pressure injection pipe (3) is provided with fastening pipes (12) before and after the upper sides of the plating tank (1), and forms a screw portion on the outside of the fastening pipes (12). Nickel plating apparatus for a semiconductor wafer, characterized in that the fastening nut (13) having a screw portion formed on the inner side of the upper both sides thereof to be disassembled or assembled. 제 1 항에 있어서, 유동장치(10)는 도금조(1)의 상부 양측에 가이드레일(14)을 설치하고, 그 상부에는 로울러가 설치되어 있는 유동판(8)을 체결하여 좌우로 유동될 수 있게 하며, 도금조(1)의 상부 일측에는 모우터(9)를 설치하되 모우터의 축에는 회전판(15)을 체결하며 유동판(8)의 중앙부에는 상하로 회전될 수 있는 로드(16)를 설치하되 로드(16)의 끝부분을 회전판(15)의 측면에 형성된 체결공(17)에 회전 가능하게 체결하여서 된 것을 특징으로 하는 반도체용 웨이퍼의 니켈 도금장치.According to claim 1, the flow apparatus 10 is provided with guide rails 14 on both sides of the upper portion of the plating bath 1, the upper side of the flow by fastening the flow plate 8 is provided with a roller is to flow to the left and right The upper side of the plating bath (1) is installed so that the motor (9) is fastened to the rotating plate 15 to the shaft of the motor and the rod 16 which can be rotated up and down in the center of the flow plate (8) The nickel plating apparatus of the wafer for semiconductors, characterized in that the end of the rod 16 is rotatably fastened to the fastening hole (17) formed on the side of the rotating plate (15). 제 1 항에 있어서, 웨이퍼고정용 지그(11)는 전면판(18)과 후면판(19)을 분해 조립식으로 구성하되 전면판(18)의 상측 중앙부에 삽입홈(20)을 형성하여 고정구(21)의 손잡이(22)가 삽입되게 하고, 후면판(19)의 상부 중앙부에는 압착돌기(23)를 형성하고, 중앙부에는 패킹(24)을 삽입 체결하여서 된 것을 특징으로하는 반도체용 웨이퍼의 니켈 도금장치.According to claim 1, the jig for fixing the wafer 11 is configured to disassemble the front plate 18 and the rear plate 19, but the insertion groove 20 in the upper center of the front plate 18 to form a fastener ( The handle 22 of 21 is inserted, and the pressing projection 23 is formed in the upper center part of the back plate 19, and the nickel of the semiconductor wafer characterized by inserting and fastening the packing 24 in the center part. Plating equipment. 제 1 항에 있어서, 웨이퍼고정용 지그(11)를 별도의 지그고정구(25)에 수개를 고정하고, 지그 고정구(25)는 유동판(8)에 설치되어 있는 플라이바(7)에 고정하여서 된 것을 특징으로 하는 반도체용 웨이퍼의 니켈 도금장치.The method of claim 1, wherein the wafer fixing jig 11 is fixed to a separate jig fixture 25, and the jig fixture 25 is fixed to the fly bar 7 provided on the flow plate (8) Nickel plating apparatus for a wafer for semiconductors, characterized in that. 삭제delete
KR1019990023901A 1999-06-24 1999-06-24 The equipment and pluting system nickel water a semiconductor KR100325974B1 (en)

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