JP3939456B2

JP3939456B2 - Substrate plating method and apparatus

Info

Publication number: JP3939456B2
Application number: JP05852799A
Authority: JP
Inventors: 明久本郷; 憲一鈴木; 篤丁野
Original assignee: Ebara Corp
Current assignee: Ebara Corp
Priority date: 1998-03-05
Filing date: 1999-03-05
Publication date: 2007-07-04
Anticipated expiration: 2019-03-05
Also published as: JPH11335895A

Description

【０００１】
【発明の属する技術分野】
本発明は半導体ウエハ等の被めっき基板のめっき面にめっき膜を形成する基板のめっき方法及び装置に関するものである。
【０００２】
【従来の技術】
従来、この種のめっき装置として図１１に示す構成のものがある。このめっき装置はめっき槽１０１の外側に外槽１０２を配置した構成である。該めっき装置において、治具１０３に装着された被めっき基板１０４のめっき面を下向きにし、めっき槽１０１の下側から被めっき基板１０４のめっき面に向かって、めっき液１０５を流しめっきを行う。めっき槽１０１をオーバーフローしためっき液１０５はポンプ１０６により、恒温ユニット１０７、フィルタ１０８を通って、めっき槽１０１に送られ、循環するようになっている。
【０００３】
【発明が解決しようとする課題】
上記構成のめっき装置では、被めっき基板１０４のめっき面が下向きであるため、該めっき面の微細な穴や溝にめっき液を入れるには不利であり、特に穴径や溝幅が超微細になればなる程穴や溝中の気泡が逃げにくくなり、めっき液１０５が入り込みにくいという問題がある。更に、めっき液１０５の流れが被めっき基板１０４のめっき面に対して垂直方向の流れであるため、被めっき基板１０４の中央と外周ではめっき膜の厚さが異なり、めっき膜の膜厚が均一にならないという問題がある。この傾向が被めっき基板の径が大きくなれば大きくなる程顕著になるという問題があった。
【０００４】
被めっき基板１０４のめっき面の穴の気泡が逃げ易くするため、図１２に示すように、被めっき基板１０４のめっき面を上向きにしためっき装置もあるが、この方式では、めっき槽１１０の壁面等に堆積するパーティクルが被めっき基板１０４のめっき面に付着しやすいという問題がある。なお、図１２において、１１１は被めっき基板１０４を装着する治具、１１２はシール部である。
【０００５】
本発明は上述の点に鑑みてなされたもので、ウエハのめっき面の微細穴の気泡が逃げやすく、被めっき基板のめっき面に均一な膜厚のめっき膜が形成でき、且つめっき槽内にパーティクル等が堆積しにくい基板のめっき方法及び装置を提供することを目的とする。
【０００６】
【課題を解決するための手段】
上記課題を解決するため請求項１に記載の発明は、めっき槽本体と該めっき槽本体の開口部を開閉する側板とを具備し、該側板に被めっき基板を保持した状態で、めっき槽本体の開口を閉じ、該めっき槽本体と該側板の間に形成された空間にめっき液を導入し、被めっき基板のめっき面上にめっきを施す基板のめっき方法であって、めっき液を被めっき基板のめっき面に平行に流すと共に、該めっき液の流れ方向を逆転させることを特徴とする。
【０００７】
上記のようにめっき液の流れを被めっき基板のめっき面に対して平行な流れとなるから、被めっき基板の大きさに左右されることなく、膜厚の均一なめっき膜を被めっき基板のめっき面に形成できる。また、めっき槽本体内のめっき液の流れ方向を逆転させることにより、被めっき基板のめっき面に形成されるめっき膜の膜厚が更に均一となる。また、これにより被めっき基板のめっき面の微細穴へのめっき液の出入りが促進され、微細穴の壁面にも膜厚の均一なめっき膜を形成することが可能となる。
【０００８】
また、請求項２に記載の発明は、請求項１に記載の基板のめっき方法において、被めっき基板のめっき終了後、めっき槽本体と側板の間に形成された空間からめっき液を排出し、排出後の該空間に洗浄液を導入して洗浄することを特徴とする。
【０００９】
上記のようにめっき槽本体と側板の間に形成された空間を洗浄するので、例えばめっき液としてＣｕＳＯ ₄ 液を用いた場合でも、めっき液が乾くことにより硫酸銅の結晶の生成されることなく、これがパーティクルとして悪影響を除去できる。
【００１０】
また、請求項３に記載の発明は、請求項２に記載の基板のめっき方法において、洗浄後、洗浄液が排出されためっき槽本体と側板の間に形成された空間に乾燥気体を導入して乾燥させることを特徴とする。
【００１１】
上記のようにめっき槽本体と側板の間に形成された空間を洗浄後に乾燥気体を導入して乾燥させるので、装置内の汚染が軽減され、且つ被めっき基板の表面が乾燥されるため、パーティクルが付着しにくくなる。
【００１２】
また、請求項４に記載の発明は、密閉されためっき槽の中に被めっき基板を収容し、該めっき槽内にめっき液を導入して前記被めっき基板のめっき面上にめっきを施す基板のめっき装置であって、めっき槽はめっき槽本体と該めっき槽本体の開口部を開閉する側板とを具備し、側板には基板を保持する保持機構が設けられると共に、該めっき槽本体の開閉部にはパッキンを設け、めっき槽本体の開口部を側板で閉じた状態で該側板に装着された被めっき基板の周縁面がパッキンに当接し、該めっき槽本体と該被めっき基板の間にめっき液を被めっき基板のめっき面に対して平行に流すめっき液流路を形成し、めっき液流路を流れる被めっき基板のめっき面に対する平行なめっき液の流方向を逆転させるめっき液流制御手段を設けたことを特徴とする。
【００１３】
上記のようにめっき槽本体と該被めっき基板の間にめっき液を被めっき基板のめっき面に対して平行に流すめっき液流路を形成することにより、被めっき基板のめっき面にその大きさに左右されることなく、膜厚の均一なめっき膜を形成することが可能となる。また、めっき液流制御手段を設け、めっき液流路を流れる被めっき基板のめっき面に対する平行なめっき液の流方向を逆転させることにより、被めっき基板のめっき面に形成されるめっき膜の膜厚が更に均一となる。また、これにより被めっき基板のめっき面の微細穴へのめっき液の出入りが促進され、微細穴の壁面にも膜厚の均一なめっき膜を形成することが可能となる。
【００１４】
また、請求項５に記載の発明は、請求項４に記載の基板のめっき装置において、
前記被めっき基板のめっき面が、鉛直面に対して傾いた姿勢で保持されるように構成されていることを特徴とする。
【００１５】
上記のように被めっき基板のめっき面が、鉛直面に対して傾いた姿勢で保持されるので、パーティクルがめっき面に付着することがない。
【００１６】
また、請求項６に記載の発明は、請求項４に記載の基板のめっき装置において、
前記被めっき基板のめっき面を鉛直から３０°の範囲で上を向くように傾斜させる手段を設け、該被めっき基板をこの範囲で傾斜させた状態でめっきを行うことを特徴とする。
【００１７】
上記のように被めっき基板面を鉛直から３０°の範囲で上を向くように傾斜させる手段を設け、被めっき基板をこの範囲で傾斜させた状態でめっきを行うことにより、被めっき基板のめっき面の微細穴の気泡が容易に抜け、微細な穴や溝の内部までめっき液が流れ込み、その内壁面にもめっき膜が形成できる。また、パーティクルの被めっき基板のめっき面への付着もない。
【００１８】
また、請求項７に記載の発明は、請求項４乃至６のいずれか１項に記載の基板のめっき装置において、
前記めっき槽には被めっき基板の装着を検出するセンサを設けたことを特徴とする。
【００１９】
上記のように被めっき基板の装着を検出するセンサを設けることにより、センサは被めっき基板が装着しないとき、めっき槽にめっき液を供給しないようにすることにより、被めっき基板が装着されていない状態でめっき液が供給されることにより発生するめっき液漏れ等の事故を防止することができる。
【００２０】
また、請求項４乃至７のいずれか１項に記載の基板のめっき装置において、めっき槽本体には被めっき基板と対向し略中央部に電場調整用穴が形成された遮蔽板と陽極電極とが配置されており、該陽極電極を該遮蔽板の電場調整用穴に嵌合挿入し、該遮蔽板の面と該陽極電極の面が略同一の面で連続するように構成されたことを特徴とする。これにより、遮蔽板の面と陽極電極の面とウエハ面の間を流れるめっき液の流れに乱れが少なく、より均一なめっきが可能となる。
【００２１】
【発明の実施の形態】
以下、本発明の実施の形態例を図面に基づいて説明する。図３は本発明の概念を説明するための図である。図３（ａ）に示すように、密閉されためっき槽（図示せず）内にめっき治具１に装着された半導体ウエハ等のめっきを施す被めっき基板２のめっき面を鉛直に設置し、めっき液３を下方から上方へ向かって、該めっき面に対して平行に流す。このように、密閉されためっき槽内でめっき液３が被めっき基板２のめっき面に平行に流れることで、めっきムラがなく、均一なめっき膜を形成できる。そして被めっき基板２を略鉛直方向に立てた状態とすることで、被めっき基板２のめっき面にめっき中にパーティクルが付着するという問題が防止される。
【００２２】
なお、パーティクル付着の防止は、図３（ｂ）に示すように被めっき基板２を鉛直方向から傾けた状態としても達成できる。この効果は図３（ｂ）においては被めっき基板２のめっき面が上向きの場合を示しているが、被めっき基板２のめっき面が下向きとなるように傾けた場合でも同様であることは勿論である。
【００２３】
更に、図３（ｂ）に示すように被めっき基板２を鉛直面から傾斜させ、めっき面が上を向くようにすることにより、図３（ｃ）に示すように、被めっき基板２の穴２ａの気泡４が抜け易くなる。従って、図３（ｃ）に示すように、被めっき基板２のめっき面を鉛直面から上向きに傾けることで、パーティクルが被めっき基板のめっき面に付着せず、更に、めっき液３を被めっき基板２のめっき面に平行に流すことで、被めっき基板２の大きさに左右されることなく、被めっき基板２のめっき面に均一な膜厚のめっき膜を形成することができる。
【００２４】
また、このめっき槽の特徴としては、密閉した空間内で、被めっき基板２のめっき面に平行にめっき液を流すものであるので、めっき液の圧力、流れ方向及び流速度を任意に調整することが可能となる。これにより、微細な被めっき基板のめっき面に形成された溝や孔に、緻密にめっき膜を形成することができる。
【００２５】
図１は本発明のめっき装置の構成例を示す図である。図２はめっき槽の正断面（図１のＢ−Ｂ断面）を示す。本めっき装置１０はめっき槽１１と、上下に上部ヘッダ１２、下部ヘッダ１３と、ポンプ１４、恒温ユニット１５、フィルタ１６を具備する構成である。めっき槽１１は開口部を有する断面コ字状のめっき槽本体１７と平板状の側板１８からなり、該側板１８には被めっき基板１９を装着し、該側板１８をめっき槽本体１７の開部口に密着させて固定することにより、パッキン２０が被めっき基板１９の周縁部に密着して固定される。また、めっき槽本体１７は平板状の陽極電極２１が設けられている。被めっき基板１９と陽極電極２１は平行に配置されている。なお、図１において、めっき槽１１は図２のＡ−Ａ断面を示す。
【００２６】
陽極電極２１と被めっき基板１９の間には誘電体板からなる遮蔽板２２が配置され、該遮蔽板２２の中央部には被めっき基板１９のめっき面に対向して、穴２２ａが設けられている。なお、この穴２２ａは被めっき基板１９のめっき面の電場を調整する作用を奏する電場調整用の穴である。また、被めっき基板１９と遮蔽板２２の間は平行な隙間が形成され、該隙間をめっき液２３が流れることにより、めっき液２３の流れが被めっき基板１９のめっき面に対し平行に流れるようになっている。また、めっき液２３の流路の幅ｂと長さｃは被めっき基板１９の径ａより大きくなっている。また、めっき槽本体１７の上下部にはめっき液が通る多数の穴１７ａ及び穴１７ｂが設けられる。また、陽極電極２１と被めっき基板１９の間にはめっき電源（直流電源）２４から所定の電圧が印加されるようになっている。
【００２７】
上記構成のめっき装置１０において、めっき槽１１内にめっき液２３を正方向に流す時は、弁Ｖ₁及び弁Ｖ₄を「開」にすると共に、弁Ｖ₂、弁Ｖ₃、弁Ｖ₅及びＶ₆を「閉」にする。めっき循環槽２５内のめっき液２３はポンプ１４により、恒温ユニット１５、フィルタ１６、流量調整弁２６及び弁Ｖ₁を経由して上部ヘッダ１２に送られ、めっき槽１１内を通過し、下部ヘッダ１３及び弁Ｖ₄を経て再びめっき循環槽２５に戻る。めっき槽１１内ではめっき槽本体１７の上部の穴１７ａを通って、被めっき基板１９と遮蔽板２２の間の隙間を流れ、更にめっき槽本体１７の下部の穴１７ｂを通って流れる。また、めっき電源２４から所定の電圧を陽極電極２１と被めっき基板１９の間に印加する。
【００２８】
上記構成のめっき装置において、被めっき基板１９はめっき槽１１の側板１８に固定されているから、めっき槽１１を垂直又は傾斜させることにより、被めっき基板１９は傾斜することになる。傾斜させる角度としては、０〜３０°の範囲が好適であるが、これに限定されるものではない。従って、めっき面の微細な穴の気泡は容易に抜け、且つパーティクルの付着も無くなる。更に、めっき液２３が被めっき基板１９と遮蔽板２２の間の隙間を流れると、めっき液２３の流れは上記のように被めっき基板１９のめっき面に対して平行な流れとなるから、被めっき基板１９の大きさに左右されることなく、膜厚の均一なめっき膜を被めっき基板１９のめっき面に形成できる。また、めっき液の流路の幅ｂ及び長さｃは被めっき基板１９の径ａより大きく形成されているので、めっき液の流れも被めっき基板１９の全面で均一となり、膜厚の均一なめっき膜を被めっき基板１９のめっき面に形成できる。
【００２９】
また、上記構成のめっき装置において、めっき槽１１内のめっき液２３の流れを所定のタイミングで逆転させる。即ち、弁Ｖ₂及び弁Ｖ₃を「開」にすると共に、弁Ｖ₁、弁Ｖ₄、弁Ｖ₅及び弁Ｖ₆を「閉」にすることにより、めっき循環槽２５内のめっき液２３はポンプ１４により、恒温ユニット１５、フィルタ１６、流量調整弁２６及び弁Ｖ₂を経由して下部ヘッダ１３に送られ、めっき槽１１内を通過し、上部ヘッダ１２及び弁Ｖ₃を経て再びめっき循環槽２５に戻る。
【００３０】
上記のように、所定のタイミングでめっき槽１１内のめっき液２３の流れを逆転させることにより、被めっき基板１９のめっき面に形成されるめっき膜の膜厚は更に均一となる。また、これにより被めっき基板１９のめっき面の微細穴へのめっき液２３の出入りが促進され、微細穴の壁面にも膜厚の均一なめっき膜が形成できる。
【００３１】
また、上記構成のめっき装置１０において、めっき槽１１内の圧力を所定のタイミングで上下させる。即ち、めっき槽１１内のめっき液２３の流れが正方向に流れる時、「開」となっているめっき槽１１の出口側の弁Ｖ₄をあるタイミングで「閉」とし、同時に「閉」となっている弁Ｖ₆を「開」とする。弁Ｖ₆のラインには流量調整弁２７があり、該流量調整弁２７は弁Ｖ₄のラインよりも少流量に調整されている。このため弁Ｖ₆のラインに切り換えると同時にラインの圧力が上昇する。
【００３２】
このように、弁Ｖ₄とＶ₆を所定のタイミングで開閉することにより、めっき液２３が正方向に流れている場合、めっき槽１１内の圧力を上下させることができる。また、弁Ｖ₅のラインには流量調整弁２８があり、該流量調整弁２８は弁Ｖ₃のラインよりも少流量に調整されているから、弁Ｖ₃と弁Ｖ₅を所定のタイミングで開閉することにより、めっき液２３が逆方向に流れている場合、めっき槽１１内の圧力を上下させることができる。このようにめっき槽１１内の圧力を上下させることにより、被めっき基板１９のめっき面の微細穴内の気泡が容易に抜けると共に、該微細穴へのめっき液の入り込みが良く、めっき面全面に均一な膜厚のめっき膜が形成できる。
【００３３】
めっき液２３としてＣｕＳＯ₄液を用いた場合、めっき液２３が乾くと硫酸銅の結晶の生成が著しく、これがパーティクルとして悪影響を及ぼすという問題がある。そこで、上記構成のめっき装置に、めっき工程後にめっき槽１１からめっき液２３を排出し、代わりにめっき槽１１及び上下ヘッダ１２、１３の内部に水洗水を導入する手段を設け、めっき工程後、これらめっき槽１１及び上下ヘッダ１２、１３内に水洗水を流し込んで水洗するようにする。これにより、パーティクルの生成は防止され、パーティクルによる悪影響を除去できる。
【００３４】
更に、水洗水を排出後、Ｎ₂ガスやドライ空気等の水切りのための気体をめっき槽１１に導入し、被めっき基板１９及びめっき槽１１内を乾燥させることで、装置内の汚染が軽減され、且つ被めっき基板１９の表面が乾燥されるため、パーティクルが付着しにくくなる。
【００３５】
なお、図１は本発明のめっき装置の一構成例であり、本発明はこれに限定されるものではなく、要は被めっき基板面を垂直又は傾斜させる構成であればよい。また、めっき液を前記被めっき基板表面に対して平行に流すことができ、且つめっき液流路の幅及び長さが被めっき基板の径より大きい構造とすればよい。
【００３６】
以下、本発明に係るめっき装置の具体的構成例を説明する。図４はめっき槽の具体的構成例を示す図で、図４（ａ）はめっき槽１１の側断面図、図４（ｂ）は図４（ａ）のＢ部分の拡大図である。また、図５は側板１８の具体的構成例を示す平面図である。めっき槽１１の内部は省略するが、図１と略同様の構成であり、断面コ字状のめっき槽本体１７と平板状の側板１８からなる。該側板１８の上面には後に詳述する被めっき基板装着機構により、被めっき基板１９を装着できるようになっている。また、めっき槽本体１７の側板１８と対向する開口部にはブラケット３２を介在させて環状のパッキン２０がリング（座金）２９及びビス３１で固定されており、更に該リング２９の上面には等間隔で電極（接点板）３０がビス３１でリング２９と共締で固定されている。
【００３７】
側板１８に被めっき基板１９を装着し、ヒンジ機構（後に詳述）を介して該側板１８をめっき槽本体１７の開口部に当接させると、環状のパッキン２０の内縁部は被めっき基板１９の周縁面上に密着し、図１に示すような、遮蔽板２２、被めっき基板１９及びパッキン２０で囲まれためっき液２３が流れる空間が形成される。それと同時に陰極となる電極３０の先端が被めっき基板１９の導電部に当接する。なお、この状態で側板１８に装着された被めっき基板１９の面は垂直又は傾斜できるようになっている。傾斜の角度は０〜３０°の範囲で上を向くようにするのが好ましいが、これに限定されるものではない。また、側板１８の所定の位置には被めっき基板１９が側板１８に装着されたか否かを検出するセンサ３３が設けられている。
【００３８】
また、環状のパッキン２０は図４（ｂ）の点線で示すように、内周縁部がめっき槽本体１７の外側に漏斗状に突出（外側に傾斜して突出）しており、被めっき基板１９の周縁面がこの内周縁部先端に当接し押され実線の位置に変形するように構成されている。ここで、めっき槽１１内の内圧をＰ、ブラケット３２の内径をＤ₁、パッキン２０の内径をＤ₂とすると、Ｐ×（Ｄ₁ ²-D₂ ²）π／４の力が発生し、該力でパッキン２０を被めっき基板１９側に押し付け、パッキン２０のシール性が向上する。従って、めっき槽１１の内圧を外部圧（大気圧）より高くすることにより、パッキン２０に図４（ｂ）の矢印Ｆに示すような上記力が加わり、パッキン２０の内周縁部先端が被めっき基板１９の周縁面に強く押し付けられ、シール性が向上する。
【００３９】
また、図４及び図５に示すようにパッキン２０の外側（めっき液が接しない側）に電極３０があり、電極３０は被めっき基板１９の周縁面のパッキン２０の内周縁部先端が当接するシール個所より更に外側で被めっき基板１９と接触しているから、めっき液と接触することがなく、めっきが施されることがない。従って、電極３０からパーティクルの発生を防ぐことができる。また、同時に電極３０は安定した状態の導通を維持できる。
【００４０】
図６及び図７はめっき槽１１の槽開閉機構の構成を示す図である。図において、３５は槽開閉部材であり、該槽開閉部材３５に側板１８がブラケット４２及びピン４３を介して支枢されている。また、槽開閉部材３５の下端はヒンジ機構３７でめっき槽１１のめっき槽本体１７の下端に支枢されている。３８は槽開閉用シリンダで、該槽開閉用シリンダ３８のピストン３８ａの先端が前記ピン４３に支枢されて、該槽開閉用シリンダ３８を作動させ、ピストン３８ａを前進後退させることにより、槽開閉部材３５はヒンジ機構３７を中心に回動し、該槽開閉部材３５に支枢された側板１８が回動し、めっき槽１１を開閉する。
【００４１】
めっき槽１１のめっき槽本体１７の上部には支持部材４１を介してロック用シリンダ３４が設けられ、該ロック用シリンダ３４のピストン３４ａにはロック部材３６が連結されている。槽開閉用シリンダ３８を作動させピストン３８ａを前進させると、槽開閉部材３５及び側板１８は回動し、側板１８がめっき槽本体１７に当接する位置に達したら、ロック用シリンダ３４を作動させることにより、図７に示すように、ロック部材３６が突出し、槽開閉部材３５の上端部に設けられたロック用突起部３９に係合し、槽開閉部材３５及び側板１８はロックされる。
【００４２】
４０は側板１８と槽開閉部材３５の間の遊びを調整するための調整用のヒンジ機構であり、該ヒンジ機構４０を介して側板１８と槽開閉部材３５は所定寸法の遊びを介して互いに結合されており、この遊びの間隔はナット４０ａで調整され、側板１８に装着された被めっき基板１９がパッキン２０に当接してからロックされるまでの間隔を調整している。
【００４３】
上記槽開閉部材３５を開いた状態、即ち側板１８を図６のＣの位置で、側板１８に被めっき基板１９を装着する。図８及び図９は被めっき基板装着機構の構成を示す図である。図示するように、被めっき基板装着機構は側板１８に固定された爪駆動用シリンダ４４を具備し、該爪駆動用シリンダ４４のピストン４４ａの先端には先端が側板１８の上部表面に突出する被めっき基板保持用爪４５が固定されている。また、側板１８の下部には被めっき基板保持用爪４６がその先端が該側板１８の下部表面にバネ等（図示せず）を介して突出自在に設けられている。
【００４４】
また、爪駆動用シリンダ４４の下端に固定したロッド５０にはバネ５１を介して部材４９が摺動自在に設けられ、該部材４９の一端にはローラー４７が回転自在に設けられ、他端には連結部材５２を介して前記被めっき基板保持用爪４６を押圧する爪押圧部材４８が連結されている。なお、爪押圧部材４８はピン５３を支点に回動自在に支枢されている。また、５４は前記ローラー４７が当接する当接部材である。
【００４５】
上記構成の被めっき基板装着機構において、図６の槽開閉用シリンダ３８を動作させて、側板１８を図９に示すように開くと、ローラー４７が当接部材５４に当接し、部材４９を押し上げる。これにより、爪押圧部材４８の端部が連結部材５２を介して引っ張られピン５３を中心に時計方向に回動する。これにより該爪押圧部材４８で、被めっき基板保持用爪４６を押す。これにより、該被めっき基板保持用爪４６が所定寸法だけ側板１８の表面に突出する。また、爪駆動用シリンダ４４を作動させることにより、被めっき基板保持用爪４５が所定寸法上方に移動する。この状態で被めっき基板保持用爪４６と被めっき基板保持用爪４５の間隔は被めっき基板１９の径より、所定量大きくなっている。
【００４６】
この状態で、図示しない、ロボットアーム先端に把持された被めっき基板１９を被めっき基板保持用爪４６と被めっき基板保持用爪４５の間の側板１８の上面に載置する。この被めっき基板１９が載置されたことは、センサ３３（図４参照）で検出する。爪駆動用シリンダ４４を作動させ、被めっき基板保持用爪４５を被めっき基板１９の側縁に当接するまで移動させ、被めっき基板１９を被めっき基板保持用爪４６と被めっき基板保持用爪４５で挟持する。これにより、被めっき基板１９は側板１８の上に装着される。
【００４７】
続いて、図６の槽開閉用シリンダ３８を作動させピストン３８ａを伸ばすことにより、槽開閉部材３５はヒンジ機構３７を中心に反時計方向に回動し、それに連動して側板１８も反時計方向に回動する。これによりローラー４７は当接部材５４から外れ、部材４９及び連結部材５２はバネ５１に押されて所定寸法下降する。これにより、爪押圧部材４８がピン５３を中心に反時計方向に回動し、被めっき基板保持用爪４６を開放する。これにより被めっき基板保持用爪４６は後退するが、その先端は被めっき基板１９の外縁部を支持できるだけ側板１８の上面より突出し、被めっき基板１９を支持する。
【００４８】
上記のように側板１８がめっき槽本体１７の開口部を閉じ、環状のパッキン２０の内縁部が被めっき基板１９の周縁面部に密着し、遮蔽板２２、被めっき基板１９及びパッキン２０で囲まれためっき液２３が流れる空間が形成されると、図１のポンプ１４を起動し、めっき液２３を該空間に流してめっきを行うのであるが、被めっき基板１９が側板１８に装着されていないと、このめっき液２３を流す閉じられた空間が形成されないから、ポンプ１４を起動するとめっき液２３が外部に流出することになる。そこで、本実施形態例では、上記センサ３３の出力により、被めっき基板１９が装着されているか否を検出し、もし被めっき基板１９が装着されていない時は、警報を発する等を行い、少なくともポンプ１４に起動電源が投入されてもポンプ１４を起動しないようにする。これにより、被めっき基板１９が装着されていない状態でめっき槽１１内にめっき液２３が供給されてめっき槽１１の外に流れるという心配はなく、安全となる。
【００４９】
図１０は本発明のめっき装置のめっき槽の他の構成例を示す図である。同図において、図１と同一符号を付した部分は同一又は相当部分を示す。図示するように、本めっき槽１１はめっき槽本体１７に遮蔽板２２を嵌合挿入した構成とし、めっき槽本体１７の面と遮蔽板２２の面を同一面で連続させ、且つ遮蔽板２２の中央部に設けられた電場調整用の穴２２ａに陽極電極２１を嵌合挿入し遮蔽板２２の面と陽極電極２１の面を同一面で連続させた構成としている。そして側板１８、遮蔽板２２及び陽極電極２１と被めっき基板１９の間にめっき液を流す空間５６を形成するように構成している。なお、５５は遮蔽板２２の穴２２ａの内周面と陽極電極の外周面の間に介装されるＯリングである。
【００５０】
なお、図１０に示す構成のめっき槽１１において、図示は省略するがめっき槽本体１７の上下部に設けるめっき液が通る多数の穴１７ａ及び１７ｂは図１及び図２と同一である。また、めっき槽１１へめっき循環槽２５からめっき液を供給するめっき液の流路構成も図１に示す構成と同じである。
【００５１】
上記のように、めっき槽本体１７の面と遮蔽板２２の面及び陽極電極２１の面を同一面で連続した構成とすることにより、この面と被めっき基板１９の間の空間を流れるめっき液の流れの乱れが抑制され、被めっき基板１９の面により均一なめっき膜が形成できる。
【００５２】
また、本発明に係る基板のめっき方法及び装置でめっき処理を施す被めっき基板としては、半導体ウエハに限らず、めっき処理を施す必要のある種々の基板が考えられる。
【００５３】
【発明の効果】
以上説明したように、各請求項によれば下記のような優れた効果が得られる。
【００５４】
請求項１に記載の発明によれば、めっき液の流れを被めっき基板のめっき面に対して平行な流れとなるから、被めっき基板の大きさに左右されることなく、膜厚の均一なめっき膜を被めっき基板のめっき面に形成できる。また、めっき槽本体内のめっき液の流れ方向を逆転させることにより、被めっき基板のめっき面に形成されるめっき膜の膜厚が更に均一となる。また、これにより被めっき基板のめっき面の微細穴へのめっき液の出入りが促進され、微細穴の壁面にも膜厚の均一なめっき膜が形成することが可能となる。
【００５５】
また、請求項２に記載の発明によれば、めっき槽本体と側板の間に形成された空間を洗浄するので、例えばめっき液としてＣｕＳＯ ₄ 液を用いた場合でも、めっき液が乾くことにより硫酸銅の結晶の生成されることなく、これがパーティクルとして悪影響を除去できる。
【００５６】
また、請求項３に記載の発明によれば、めっき槽本体と側板の間に形成された空間を洗浄後に乾燥気体を導入して乾燥させるので、装置内の汚染が軽減され、且つ被めっき基板の表面が乾燥されるため、パーティクルが付着しにくくなる。
【００５７】
また、請求項４に記載の発明によれば、めっき槽本体と該被めっき基板の間にめっき液を被めっき基板のめっき面に対して平行に流すめっき液流路を形成することにより、被めっき基板のめっき面にその大きさに左右されることなく、膜厚の均一なめっき膜を形成することが可能となる。また、めっき液流制御手段を設け、めっき液流路を流れる被めっき基板のめっき面に対する平行なめっき液の流方向を逆転させることにより、被めっき基板のめっき面に形成されるめっき膜の膜厚が更に均一となる。また、これにより被めっき基板のめっき面の微細穴へのめっき液の出入りが促進され、微細穴の壁面にも膜厚の均一なめっき膜が形成することが可能となる。
【００５８】
また、請求項５に記載の発明によれば、被めっき基板のめっき面が、鉛直面に対して傾いた姿勢で保持されるので、パーティクルがめっき面に付着することがない。
【００５９】
また、請求項６に記載の発明によれば、被めっき基板面を鉛直から３０°の範囲で上を向くように傾斜させる手段を設け、被めっき基板をこの範囲で傾斜させた状態でめっきを行うことにより、被めっき基板のめっき面の微細穴の気泡が容易に抜け、微細な穴や溝の内部までめっき液が流れ込み、その内壁面にもめっき膜が形成できる。また、パーティクルの被めっき基板のめっき面への付着もない。
【００６０】
また、請求項７に記載の発明によれば、被めっき基板の装着を検出するセンサを設けることにより、センサは被めっき基板が装着しないとき、めっき槽にめっき液を供給しないようにすることにより、被めっき基板が装着されていない状態でめっき液が供給されることにより発生するめっき液漏れ等の事故を防止することができる。
【図面の簡単な説明】
【図１】本発明のめっき装置の構成例を示す図である。
【図２】本発明のめっき装置のめっき槽の正断面（図１のＢ−Ｂ断面）を示す図である。
【図３】図３（ａ）、（ｂ）、（ｃ）は本発明の概念を説明するための図である。
【図４】本発明のめっき装置のめっき槽の構成例を示す図で、図４（ａ）はめっき槽の側断面図、図４（ｂ）は図４（ａ）のＢ部分の拡大図である。
【図５】本発明のめっき装置のめっき槽の側板の構成例を示す平面図である。
【図６】本発明のめっき装置のめっき槽の槽開閉機構の構成を示す図である。
【図７】本発明のめっき装置のめっき槽の槽開閉機構の構成を示す図である。
【図８】本発明のめっき装置の被めっき基板装着機構の構成を示す図である。
【図９】本発明のめっき装置の被めっき基板装着機構の構成を示す図である。
【図１０】本発明のめっき装置のめっき槽の他の構成例を示す図である。
【図１１】従来のめっき装置の構成例を示す図である。
【図１２】従来のめっき装置の構成例を示す図である。
【符号の説明】
１めっき治具
２被めっき基板
３めっき液
４気泡
１０めっき装置
１１めっき槽
１２上部ヘッダ
１３下部ヘッダ
１４ポンプ
１５恒温ユニット
１６フィルタ
１７めっき槽本体
１８側板
１９被めっき基板
２０パッキン
２１陽極電極
２２遮蔽板
２３めっき液
２４めっき電源
２５めっき循環槽
２６流量調整弁
２７流量調整弁
２８流量調整弁
２９リング（座金）
３０電極（接点板）
３１ビス
３２ブラケット
３３センサ
３４ロック用シリンダ
３５槽開閉部材
３６ロック部材
３７ヒンジ機構
３８槽開閉用シリンダ
３９ロック用突起部
４０ヒンジ機構
４１支持部材
４２ブラケット
４３ピン
４４爪駆動用シリンダ
４５被めっき基板保持用爪
４６被めっき基板保持用爪
４７ローラー
４８爪押圧部材
４９部材
５０ロッド
５１バネ
５２連結部材
５３ピン
５４当接部材
５５Ｏリング
５６空間[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a substrate plating method and apparatus for forming a plating film on a plating surface of a substrate to be plated such as a semiconductor wafer.
[0002]
[Prior art]
  Conventionally, there exists a thing of the structure shown in FIG. 11 as this kind of plating apparatus. This plating apparatus has a configuration in which an outer tank 102 is disposed outside the plating tank 101. In the plating apparatus, the plating surface of the substrate 104 mounted on the jig 103 is turned downward, and plating is performed by flowing the plating solution 105 from the lower side of the plating tank 101 toward the plating surface of the substrate 104 to be plated. The plating solution 105 overflowing the plating tank 101 is sent to the plating tank 101 by the pump 106 through the constant temperature unit 107 and the filter 108 and circulates.
[0003]
[Problems to be solved by the invention]
  In the plating apparatus having the above configuration, since the plating surface of the substrate 104 to be plated is facing downward, it is disadvantageous for putting the plating solution into the fine holes and grooves on the plating surface, and particularly the hole diameter and groove width are extremely fine. There is a problem that the air bubbles in the holes and grooves are more difficult to escape and the plating solution 105 is less likely to enter. Further, since the flow of the plating solution 105 is perpendicular to the plating surface of the substrate 104 to be plated, the thickness of the plating film is different between the center and the outer periphery of the substrate 104 to be plated, and the film thickness of the plating film is uniform. There is a problem of not becoming. There is a problem that this tendency becomes more prominent as the diameter of the substrate to be plated increases.
[0004]
  In order to make it easier for air bubbles in the plating surface of the substrate to be plated 104 to escape, there is a plating apparatus in which the plating surface of the substrate to be plated 104 faces upward, as shown in FIG. There is a problem that particles deposited on the surface of the substrate 104 easily adhere to the plated surface of the substrate 104 to be plated. In FIG. 12, 111 is a jig for mounting the substrate 104 to be plated, and 112 is a seal portion.
[0005]
  The present invention has been made in view of the above-mentioned points. Air bubbles in fine holes on the plating surface of the wafer can easily escape, and a plating film with a uniform film thickness can be formed on the plating surface of the substrate to be plated. Particles are hard to accumulateSubstrate plating method andAn object is to provide an apparatus.
[0006]
[Means for Solving the Problems]
  In order to solve the above problem, the invention according to claim 1A plating tank main body and a side plate that opens and closes the opening of the plating tank main body, and with the side plate holding a substrate to be plated, the plating tank main body is closed and formed between the plating tank main body and the side plate. In the spaceIntroducing plating solutionAndA plating method for a substrate that performs plating on a plating surface of a substrate to be plated,While flowing the plating solution parallel to the plating surface of the substrate to be plated, the flow direction of the plating solution is reversed.It is characterized by that.
[0007]
  as mentioned aboveSince the flow of the plating solution is parallel to the plating surface of the substrate to be plated, a plating film with a uniform thickness is formed on the plating surface of the substrate to be plated, regardless of the size of the substrate to be plated. it can. Moreover, the film thickness of the plating film formed on the plating surface of the substrate to be plated is further uniformed by reversing the flow direction of the plating solution in the plating tank body. This also facilitates the entry and exit of the plating solution into and from the fine holes on the plating surface of the substrate to be plated.It is possible to form a plating film having a uniform thickness.
[0008]
  The invention according to claim 22. The substrate plating method according to claim 1, wherein after the plating of the substrate to be plated is finished, the plating solution is discharged from the space formed between the plating tank main body and the side plate, and the cleaning solution is introduced into the discharged space for cleaning. DoIt is characterized by that.
[0009]
  as mentioned aboveSince the space formed between the plating tank body and the side plate is washed, for example, CuSO as a plating solution _Four Even when the solution is used, it is possible to remove adverse effects as particles without generating copper sulfate crystals by drying the plating solution.
[0010]
  The invention according to claim 33. The method for plating a substrate according to claim 2, wherein after the cleaning, the drying gas is introduced into a space formed between the plating tank main body and the side plate from which the cleaning liquid has been discharged, and is dried.It is characterized by that.
[0011]
  as mentioned aboveSince the space formed between the plating tank body and the side plate is cleaned and dried by introducing a dry gas, contamination in the apparatus is reduced and the surface of the substrate to be plated is dried, so that particles are less likely to adhere. .
[0012]
  The invention according to claim 4A substrate plating apparatus that accommodates a substrate to be plated in a sealed plating tank, introduces a plating solution into the plating tank, and performs plating on the plating surface of the substrate to be plated. A tank body and a side plate that opens and closes the opening of the plating tank body, the side plate is provided with a holding mechanism for holding the substrate, a packing is provided at the opening and closing part of the plating tank body, With the opening closed with the side plate, the peripheral surface of the substrate to be plated mounted on the side plate contacts the packing, and the plating solution is applied to the plating surface of the substrate to be plated between the plating tank body and the substrate to be plated. And a plating solution flow control means for reversing the flow direction of the plating solution parallel to the plating surface of the substrate to be plated flowing through the plating solution passage.It is characterized by that.
[0013]
  as mentioned aboveBy forming a plating solution flow path that allows the plating solution to flow parallel to the plating surface of the substrate to be plated between the plating tank body and the substrate to be plated, the size depends on the size of the plating surface of the substrate to be plated. Therefore, it is possible to form a plating film having a uniform thickness.Also,By providing a plating solution flow control means and reversing the flow direction of the plating solution parallel to the plating surface of the substrate to be plated flowing through the plating solution flow path, the thickness of the plating film formed on the plating surface of the substrate to be plated can be reduced. It becomes even more uniform. This also facilitates the entry and exit of the plating solution into and from the fine holes on the plating surface of the substrate to be plated, and it is possible to form a plating film with a uniform film thickness on the wall surfaces of the fine holes.
[0014]
  Further, the invention according to claim 5 is a claim.4In the substrate plating apparatus according to claim 1,
  The plating surface of the substrate to be plated is configured to be held in a posture inclined with respect to a vertical surface.It is characterized by that.
[0015]
  as mentioned aboveSince the plating surface of the substrate to be plated is held in a posture inclined with respect to the vertical surface, particles do not adhere to the plating surface.
[0016]
  Further, the invention according to claim 6 is the claim.4In the substrate plating apparatus according to claim 1,
  Means for inclining the plating surface of the substrate to be plated so as to face upward in a range of 30 ° from the vertical is provided, and plating is performed in a state where the substrate to be plated is inclined in this range.It is characterized by that.
[0017]
  as mentioned aboveBy providing means for inclining the surface of the substrate to be plated so as to face upward within a range of 30 ° from the vertical, by performing plating in a state in which the substrate to be plated is inclined within this range, fine holes on the surface of the substrate to be plated The bubbles easily escape, the plating solution flows into the fine holes and grooves, and a plating film can be formed on the inner wall surface. Further, there is no adhesion of particles to the plating surface of the substrate to be plated.
[0018]
  The invention according to claim 7Claim4 to 6Of any one ofSubstrateIn plating equipment,
  The plating tank is provided with a sensor for detecting the mounting of the substrate to be plated.It is characterized by that.
[0019]
  By providing a sensor for detecting the mounting of the substrate to be plated as described above, when the substrate to be plated is not mounted, the substrate is not mounted by preventing the plating solution from being supplied to the plating tank. It is possible to prevent an accident such as leakage of the plating solution that occurs when the plating solution is supplied in the state.
[0020]
  Claims4Thru7Of any one ofSubstrateIn plating equipment,The main body of the plating tank has a shielding plate and an anode electrode facing the substrate to be plated and having an electric field adjustment hole formed in the substantially central portion. The anode electrode is fitted into the electric field adjustment hole of the shielding plate. Inserted and configured such that the surface of the shielding plate and the surface of the anode electrode are continuous on substantially the same surfaceIt is characterized by that. ThisThere is little disturbance in the flow of the plating solution flowing between the surface of the shielding plate, the surface of the anode electrode, and the wafer surface,More uniform plating is possible.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
  Embodiments of the present invention will be described below with reference to the drawings. FIG. 3 is a diagram for explaining the concept of the present invention. As shown in FIG. 3 (a), the plating surface of the substrate to be plated 2 for plating a semiconductor wafer or the like mounted on the plating jig 1 is placed vertically in a sealed plating tank (not shown), The plating solution 3 is allowed to flow parallel to the plating surface from below to above. As described above, the plating solution 3 flows in parallel to the plating surface of the substrate 2 to be plated in the sealed plating tank, so that a uniform plating film can be formed without uneven plating. And the problem that a particle adheres to the plating surface of the to-be-plated board | substrate 2 during plating by making the to-be-plated board | substrate 2 stand in the substantially vertical direction is prevented.
[0022]
  In addition, prevention of particle adhesion can be achieved even when the substrate to be plated 2 is tilted from the vertical direction as shown in FIG. This effect is shown in FIG. 3B in the case where the plating surface of the substrate 2 to be plated is upward, but the same is true even when the plating surface of the substrate 2 to be plated is tilted downward. It is.
[0023]
  Further, as shown in FIG. 3 (b), the substrate 2 to be plated is inclined from the vertical surface so that the plating surface faces upward, so that the holes in the substrate 2 to be plated are shown in FIG. 3 (c). The bubbles 4a of 2a are easily removed. Therefore, as shown in FIG. 3C, the plating surface of the substrate 2 to be plated is tilted upward from the vertical surface so that particles do not adhere to the plating surface of the substrate to be plated, and the plating solution 3 is plated. By flowing in parallel to the plating surface of the substrate 2, a plating film having a uniform film thickness can be formed on the plating surface of the substrate 2 to be plated without depending on the size of the substrate 2 to be plated.
[0024]
  Further, as a feature of this plating tank, since the plating solution is made to flow in parallel with the plating surface of the substrate 2 to be plated in a sealed space, the pressure, flow direction and flow velocity of the plating solution are arbitrarily adjusted. It becomes possible. Thereby, a plating film can be densely formed in a groove or a hole formed on a plating surface of a fine substrate to be plated.
[0025]
  FIG. 1 is a diagram showing a configuration example of a plating apparatus of the present invention. FIG. 2 shows a front cross section (BB cross section of FIG. 1) of the plating tank. The plating apparatus 10 includes a plating tank 11, and an upper header 12, a lower header 13, a pump 14, a constant temperature unit 15, and a filter 16. The plating tank 11 includes a plating tank body 17 having a U-shaped cross section having an opening and a flat side plate 18. A substrate 19 is mounted on the side plate 18, and the side plate 18 is an opening of the plating tank body 17. The packing 20 is fixed in close contact with the periphery of the substrate 19 to be plated by fixing it in close contact with the mouth. The plating tank body 17 is provided with a flat plate-like anode electrode 21. The substrate 19 to be plated and the anode electrode 21 are arranged in parallel. In FIG. 1, the plating tank 11 shows an AA cross section of FIG. 2.
[0026]
  A shielding plate 22 made of a dielectric plate is disposed between the anode electrode 21 and the substrate to be plated 19, and a hole 22 a is provided at the center of the shielding plate 22 so as to face the plating surface of the substrate to be plated 19. ing. The hole 22a is an electric field adjusting hole that acts to adjust the electric field of the plating surface of the substrate 19 to be plated. Further, a parallel gap is formed between the substrate 19 to be plated and the shielding plate 22, and the plating solution 23 flows through the gap so that the flow of the plating solution 23 flows in parallel to the plating surface of the substrate 19 to be plated. It has become. Further, the width b and the length c of the flow path of the plating solution 23 are larger than the diameter a of the substrate 19 to be plated. In addition, a large number of holes 17 a and holes 17 b through which the plating solution passes are provided at the upper and lower portions of the plating tank body 17. Further, a predetermined voltage is applied between the anode electrode 21 and the substrate 19 to be plated from a plating power source (DC power source) 24.
[0027]
  In the plating apparatus 10 having the above configuration, when the plating solution 23 is allowed to flow in the positive direction into the plating tank 11, the valve V₁And valve V_FourIs opened and the valve V₂, Valve V_Three, Valve V_FiveAnd V₆Set to “Closed”. The plating solution 23 in the plating circulation tank 25 is pumped by a constant temperature unit 15, a filter 16, a flow rate adjusting valve 26 and a valve V.₁To the upper header 12 and pass through the plating tank 11, and the lower header 13 and the valve V_FourAfter that, it returns to the plating circulation tank 25 again. In the plating tank 11, it passes through a hole 17 a in the upper part of the plating tank body 17, flows through a gap between the substrate 19 to be plated and the shielding plate 22, and further flows through a hole 17 b in the lower part of the plating tank body 17. A predetermined voltage is applied between the anode electrode 21 and the substrate 19 to be plated from the plating power source 24.
[0028]
  In the plating apparatus having the above configuration, since the substrate 19 to be plated is fixed to the side plate 18 of the plating tank 11, the substrate 19 to be plated is inclined when the plating tank 11 is vertically or inclined. The angle of inclination is preferably in the range of 0 to 30 °, but is not limited thereto. Therefore, bubbles in fine holes on the plating surface can be easily removed and no particles can be attached. Further, when the plating solution 23 flows through the gap between the substrate 19 to be plated and the shielding plate 22, the flow of the plating solution 23 becomes a flow parallel to the plating surface of the substrate 19 to be plated as described above. A plating film having a uniform film thickness can be formed on the plating surface of the substrate 19 without depending on the size of the plating substrate 19. Further, since the width b and the length c of the flow path of the plating solution are formed larger than the diameter a of the substrate 19 to be plated, the flow of the plating solution is uniform over the entire surface of the substrate 19 and the film thickness is uniform. A plating film can be formed on the plating surface of the substrate 19 to be plated.
[0029]
  In the plating apparatus having the above configuration, the flow of the plating solution 23 in the plating tank 11 is reversed at a predetermined timing. That is, the valve V₂And valve V_ThreeIs opened and the valve V₁, Valve V_Four, Valve V_FiveAnd valve V₆Is closed, the plating solution 23 in the plating circulation bath 25 is pumped by the constant temperature unit 15, filter 16, flow control valve 26 and valve V by the pump 14.₂Is sent to the lower header 13 through the plating tank 11, passes through the plating tank 11, the upper header 12 and the valve V_ThreeAfter that, it returns to the plating circulation tank 25 again.
[0030]
  As described above, by reversing the flow of the plating solution 23 in the plating tank 11 at a predetermined timing, the film thickness of the plating film formed on the plating surface of the substrate 19 to be plated becomes more uniform. This also facilitates the entry and exit of the plating solution 23 into and from the fine holes on the plating surface of the substrate 19 to be plated, and a plating film having a uniform film thickness can be formed on the wall surfaces of the fine holes.
[0031]
  Moreover, in the plating apparatus 10 having the above-described configuration, the pressure in the plating tank 11 is raised and lowered at a predetermined timing. That is, when the flow of the plating solution 23 in the plating tank 11 flows in the forward direction, the valve V on the outlet side of the plating tank 11 which is “open”._FourIs closed at a certain timing, and at the same time the valve V is closed₆Is “open”. Valve V₆Is provided with a flow rate adjusting valve 27, which is a valve V._FourThe flow rate is adjusted to be smaller than that of the line. For this reason, the valve V₆At the same time as switching to the line, the line pressure rises.
[0032]
  Thus, the valve V_FourAnd V₆When the plating solution 23 is flowing in the forward direction, the pressure in the plating tank 11 can be increased or decreased. Valve V_FiveIs provided with a flow rate adjusting valve 28, which is a valve V._ThreeSince the flow rate is adjusted to be smaller than that of_ThreeAnd valve V_FiveWhen the plating solution 23 is flowing in the opposite direction, the pressure in the plating tank 11 can be increased or decreased. By raising and lowering the pressure in the plating tank 11 in this way, air bubbles in the fine holes on the plating surface of the substrate 19 to be plated can be easily removed, and the plating solution can enter the fine holes uniformly, so that the entire plating surface is uniform. A plating film with a sufficient thickness can be formed.
[0033]
  CuSO as plating solution 23_FourWhen the solution is used, when the plating solution 23 dries, copper sulfate crystals are remarkably generated, which has a problem of adversely affecting particles. Therefore, the plating apparatus having the above configuration is provided with a means for discharging the plating solution 23 from the plating tank 11 after the plating process, and instead introducing washing water into the plating tank 11 and the upper and lower headers 12 and 13. Washing water is poured into the plating tank 11 and the upper and lower headers 12 and 13 for washing. Thereby, the generation of particles is prevented, and the adverse effects due to the particles can be removed.
[0034]
  Furthermore, after draining flush water, N₂By introducing a gas for draining water such as gas or dry air into the plating tank 11 and drying the substrate 19 and the plating tank 11, the contamination in the apparatus is reduced and the surface of the substrate 19 is plated. Since it is dried, particles are less likely to adhere.
[0035]
  FIG. 1 shows an example of the configuration of the plating apparatus according to the present invention, and the present invention is not limited to this. The point is that the substrate surface to be plated may be vertically or inclined. In addition, the plating solution may flow parallel to the surface of the substrate to be plated, and the width and length of the plating solution flow path may be larger than the diameter of the substrate to be plated.
[0036]
  Hereinafter, a specific configuration example of the plating apparatus according to the present invention will be described. FIG. 4 is a diagram showing a specific configuration example of the plating tank, FIG. 4 (a) is a side sectional view of the plating tank 11, and FIG. 4 (b) is an enlarged view of a portion B of FIG. 4 (a). FIG. 5 is a plan view showing a specific configuration example of the side plate 18. Although the inside of the plating tank 11 is omitted, the configuration is substantially the same as that of FIG. 1, and it includes a plating tank body 17 having a U-shaped cross section and a flat side plate 18. A substrate to be plated 19 can be mounted on the upper surface of the side plate 18 by a substrate mounting mechanism to be described in detail later. An annular packing 20 is fixed with a ring (washer) 29 and a screw 31 with a bracket 32 interposed in an opening facing the side plate 18 of the plating tank main body 17. Electrodes (contact plates) 30 are fixed to the ring 29 with screws 31 at intervals.
[0037]
  When the substrate 19 to be plated is mounted on the side plate 18 and the side plate 18 is brought into contact with the opening of the plating tank body 17 via a hinge mechanism (detailed later), the inner edge of the annular packing 20 is the substrate 19 to be plated. As shown in FIG. 1, a space in which the plating solution 23 surrounded by the shielding plate 22, the substrate to be plated 19 and the packing 20 flows is formed. At the same time, the tip of the electrode 30 serving as a cathode contacts the conductive portion of the substrate 19 to be plated. In this state, the surface of the substrate 19 to be plated mounted on the side plate 18 can be vertical or inclined. Although it is preferable that the inclination angle is upward in the range of 0 to 30 °, it is not limited to this. A sensor 33 is provided at a predetermined position of the side plate 18 to detect whether or not the substrate 19 to be plated is mounted on the side plate 18.
[0038]
  Further, as shown by a dotted line in FIG. 4B, the annular packing 20 has an inner peripheral edge protruding in a funnel shape on the outside of the plating tank body 17 (inclined outwardly protruding), and the substrate 19 to be plated. The peripheral surface of this is in contact with and pushed against the tip of the inner peripheral edge and is deformed to the position of the solid line. Here, the internal pressure in the plating tank 11 is P, and the inner diameter of the bracket 32 is D.₁, D is the inner diameter of the packing 20₂Then P × (D₁ ²-D₂ ²) A force of π / 4 is generated, and the packing 20 is pressed against the substrate 19 side by the force, and the sealing performance of the packing 20 is improved. Therefore, by making the internal pressure of the plating tank 11 higher than the external pressure (atmospheric pressure), the force as shown by the arrow F in FIG. 4B is applied to the packing 20, and the tip of the inner peripheral edge of the packing 20 is plated. It is strongly pressed against the peripheral surface of the substrate 19 to improve the sealing performance.
[0039]
  As shown in FIGS. 4 and 5, the electrode 30 is on the outer side of the packing 20 (the side where the plating solution does not contact), and the tip of the inner peripheral edge of the packing 20 on the peripheral surface of the substrate 19 is in contact with the electrode 30. Since it is in contact with the substrate 19 to be plated further outside the seal portion, it is not in contact with the plating solution and plating is not performed. Accordingly, generation of particles from the electrode 30 can be prevented. At the same time, the electrode 30 can maintain stable conduction.
[0040]
  6 and 7 are diagrams showing the configuration of the tank opening / closing mechanism of the plating tank 11. In the figure, reference numeral 35 denotes a tank opening / closing member, and the side plate 18 is pivoted to the tank opening / closing member 35 via a bracket 42 and a pin 43. The lower end of the tank opening / closing member 35 is pivoted to the lower end of the plating tank body 17 of the plating tank 11 by a hinge mechanism 37. Reference numeral 38 denotes a tank opening / closing cylinder. The tip of the piston 38a of the tank opening / closing cylinder 38 is supported by the pin 43, and the tank opening / closing cylinder 38 is operated to move the piston 38a forward and backward. The member 35 rotates about the hinge mechanism 37, and the side plate 18 pivoted on the tank opening / closing member 35 rotates to open and close the plating tank 11.
[0041]
  A locking cylinder 34 is provided on the upper part of the plating tank body 17 of the plating tank 11 via a support member 41, and a lock member 36 is connected to a piston 34 a of the locking cylinder 34. When the tank opening / closing cylinder 38 is operated to move the piston 38a forward, the tank opening / closing member 35 and the side plate 18 rotate, and when the side plate 18 reaches a position where it abuts against the plating tank body 17, the locking cylinder 34 is operated. Accordingly, as shown in FIG. 7, the lock member 36 protrudes and engages with a locking projection 39 provided at the upper end of the tank opening / closing member 35, and the tank opening / closing member 35 and the side plate 18 are locked.
[0042]
  Reference numeral 40 denotes an adjustment hinge mechanism for adjusting the play between the side plate 18 and the tank opening / closing member 35, and the side plate 18 and the tank opening / closing member 35 are coupled to each other through play of a predetermined size via the hinge mechanism 40. The play interval is adjusted by the nut 40a, and the interval from when the substrate 19 mounted on the side plate 18 contacts the packing 20 until it is locked is adjusted.
[0043]
  The substrate opening / closing member 35 is opened, that is, the side plate 18 is mounted at the position C in FIG. 8 and 9 are diagrams showing the configuration of the substrate mounting mechanism. As shown in the figure, the substrate to be plated mounting mechanism includes a claw driving cylinder 44 fixed to the side plate 18, and the tip of the piston 44 a of the claw driving cylinder 44 has a tip protruding to the upper surface of the side plate 18. The plating substrate holding claws 45 are fixed. Further, a to-be-plated substrate holding claw 46 is provided at the lower portion of the side plate 18 so that the tip thereof can protrude from the lower surface of the side plate 18 via a spring or the like (not shown).
[0044]
  A member 49 is slidably provided on a rod 50 fixed to the lower end of the claw driving cylinder 44 via a spring 51. A roller 47 is rotatably provided at one end of the member 49, and at the other end. A claw pressing member 48 that presses the substrate holding claw 46 is connected through a connecting member 52. The claw pressing member 48 is pivotally supported by the pin 53 as a fulcrum. Reference numeral 54 denotes an abutting member with which the roller 47 abuts.
[0045]
  When the tank opening / closing cylinder 38 of FIG. 6 is operated and the side plate 18 is opened as shown in FIG. 9 in the substrate mounting mechanism having the above configuration, the roller 47 contacts the contact member 54 and pushes up the member 49. . As a result, the end of the claw pressing member 48 is pulled via the connecting member 52 and rotates clockwise around the pin 53. Thereby, the nail | claw 46 for to-be-plated board | substrate holding is pushed with this nail | claw press member 48. FIG. Thereby, the to-be-plated substrate holding claw 46 protrudes from the surface of the side plate 18 by a predetermined dimension. Further, by operating the claw driving cylinder 44, the to-be-plated substrate holding claw 45 moves upward by a predetermined dimension. In this state, the distance between the substrate holding nail 46 and the substrate holding nail 45 is larger than the diameter of the substrate 19 by a predetermined amount.
[0046]
  In this state, the substrate 19 to be plated held at the tip of the robot arm (not shown) is placed on the upper surface of the side plate 18 between the substrate holding claw 46 and the substrate holding claw 45. The placement of the substrate 19 to be plated is detected by a sensor 33 (see FIG. 4). The claw driving cylinder 44 is actuated to move the substrate to be plated holding claw 45 until it contacts the side edge of the substrate 19 to be plated. Hold at 45. As a result, the substrate 19 to be plated is mounted on the side plate 18.
[0047]
  Subsequently, by operating the tank opening / closing cylinder 38 of FIG. 6 and extending the piston 38a, the tank opening / closing member 35 rotates counterclockwise around the hinge mechanism 37, and the side plate 18 also rotates counterclockwise in conjunction therewith. To turn. As a result, the roller 47 is disengaged from the contact member 54, and the member 49 and the connecting member 52 are pushed by the spring 51 and lowered by a predetermined dimension. As a result, the claw pressing member 48 rotates counterclockwise about the pin 53 and opens the to-be-plated substrate holding claw 46. As a result, the to-be-plated substrate holding claws 46 retreat, but their tips protrude from the upper surface of the side plate 18 to support the outer edge of the to-be-plated substrate 19 and support the to-be-plated substrate 19.
[0048]
  As described above, the side plate 18 closes the opening of the plating tank body 17, the inner edge portion of the annular packing 20 is in close contact with the peripheral surface portion of the substrate to be plated 19, and is surrounded by the shielding plate 22, the substrate to be plated 19 and the packing 20. When the space in which the plating solution 23 flows is formed, the pump 14 shown in FIG. 1 is activated to perform plating by flowing the plating solution 23 into the space, but the substrate 19 to be plated is not mounted on the side plate 18. Then, since the closed space for flowing the plating solution 23 is not formed, the plating solution 23 flows out to the outside when the pump 14 is started. Therefore, in the present embodiment example, it is detected from the output of the sensor 33 whether or not the substrate 19 is mounted. If the substrate 19 is not mounted, an alarm is issued, etc. The pump 14 is not activated even when the activation power is supplied to the pump 14. Thereby, there is no fear that the plating solution 23 is supplied into the plating tank 11 and flows out of the plating tank 11 in a state where the substrate 19 to be plated is not mounted, and it is safe.
[0049]
  FIG. 10 is a view showing another configuration example of the plating tank of the plating apparatus of the present invention. In the same figure, the part which attached | subjected the same code | symbol as FIG. 1 shows the same or equivalent part. As shown in the figure, the main plating tank 11 has a structure in which a shielding plate 22 is fitted and inserted into the plating tank main body 17, the surface of the plating tank main body 17 and the surface of the shielding plate 22 are continuous on the same surface, The anode electrode 21 is fitted and inserted into the electric field adjusting hole 22a provided in the central portion, and the surface of the shielding plate 22 and the surface of the anode electrode 21 are made continuous on the same surface. A space 56 through which the plating solution flows is formed between the side plate 18, the shielding plate 22, the anode electrode 21, and the substrate 19 to be plated. Reference numeral 55 denotes an O-ring interposed between the inner peripheral surface of the hole 22a of the shielding plate 22 and the outer peripheral surface of the anode electrode.
[0050]
  In the plating tank 11 having the configuration shown in FIG. 10, although not shown, a large number of holes 17a and 17b through which a plating solution provided on the upper and lower portions of the plating tank body 17 passes are the same as those in FIGS. Further, the flow path configuration of the plating solution for supplying the plating solution from the plating circulation bath 25 to the plating bath 11 is the same as the configuration shown in FIG.
[0051]
  As described above, the plating solution flowing in the space between this surface and the substrate to be plated 19 is formed by continuously configuring the surface of the plating tank body 17, the surface of the shielding plate 22, and the surface of the anode electrode 21 on the same surface. The flow disturbance is suppressed, and a uniform plating film can be formed on the surface of the substrate 19 to be plated.
[0052]
  Further, the substrate to be plated by the substrate plating method and apparatus according to the present invention is not limited to a semiconductor wafer, and various substrates that need to be plated can be considered.
[0053]
【The invention's effect】
  As described above, according to each claim, the following excellent effects can be obtained.
[0054]
  According to the invention described in claim 1, since the flow of the plating solution is parallel to the plating surface of the substrate to be plated, the film thickness is uniform without being influenced by the size of the substrate to be plated. A plating film can be formed on the plating surface of the substrate to be plated. Moreover, the film thickness of the plating film formed on the plating surface of the substrate to be plated is further uniformed by reversing the flow direction of the plating solution in the plating tank body. This also facilitates the entry and exit of the plating solution into and from the fine holes on the plating surface of the substrate to be plated, and a plating film having a uniform film thickness can be formed on the wall surfaces of the fine holes.
[0055]
  Further, according to the invention described in claim 2, since the space formed between the plating tank main body and the side plate is washed, for example, CuSO as a plating solution. _Four Even when the solution is used, it is possible to remove adverse effects as particles without generating copper sulfate crystals by drying the plating solution.
[0056]
  Claims3According to the invention described inSince the space formed between the plating tank body and the side plate is cleaned and dried by introducing a dry gas, contamination in the apparatus is reduced and the surface of the substrate to be plated is dried, so that particles are less likely to adhere. .
[0057]
  Claims4According to the invention described inA plating solution flow path is provided between the plating tank body and the substrate to be plated to allow the plating solution to flow parallel to the plating surface of the substrate to be plated.By forming, a plated film having a uniform film thickness can be formed on the plating surface of the substrate to be plated without being influenced by the size. Also,By providing a plating solution flow control means and reversing the flow direction of the plating solution parallel to the plating surface of the substrate to be plated flowing through the plating solution flow path, the thickness of the plating film formed on the plating surface of the substrate to be plated can be reduced. It becomes even more uniform. This also facilitates the entry and exit of the plating solution into and from the fine holes on the plating surface of the substrate to be plated, and a plating film having a uniform film thickness can be formed on the wall surfaces of the fine holes.
[0058]
  Claims5According to the invention described inSince the plating surface of the substrate to be plated is held in a posture inclined with respect to the vertical surface, particles do not adhere to the plating surface.
[0059]
  Claims6According to the invention, the means for inclining the surface of the substrate to be plated is provided so as to face upward in a range of 30 ° from the vertical, and plating is performed in a state where the substrate to be plated is inclined in this range.ByAir bubbles in the fine holes on the plating surface of the substrate to be plated easily escape,Of fine holes and groovesThe plating solution flows into the interior, and a plating film can be formed on the inner wall surface. Further, there is no adhesion of particles to the plating surface of the substrate to be plated.
[0060]
  Claims7According to the invention described inBy providing a sensor for detecting the mounting of the substrate to be plated, the sensor prevents the plating solution from being supplied to the plating tank when the substrate to be plated is not mounted, so that the plating solution is not mounted on the plating substrate. It is possible to prevent accidents such as leakage of the plating solution, which are caused by the supply of.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration example of a plating apparatus of the present invention.
FIG. 2 is a view showing a front section (BB section of FIG. 1) of a plating tank of the plating apparatus of the present invention.
FIGS. 3A, 3B and 3C are diagrams for explaining the concept of the present invention. FIG.
4A and 4B are diagrams showing a configuration example of a plating tank of the plating apparatus of the present invention, in which FIG. 4A is a side sectional view of the plating tank, and FIG. 4B is an enlarged view of a portion B in FIG. It is.
FIG. 5 is a plan view showing a configuration example of a side plate of a plating tank of the plating apparatus of the present invention.
FIG. 6 is a view showing a configuration of a tank opening / closing mechanism of a plating tank of the plating apparatus of the present invention.
FIG. 7 is a view showing a configuration of a tank opening / closing mechanism of a plating tank of the plating apparatus of the present invention.
FIG. 8 is a diagram showing a configuration of a to-be-plated substrate mounting mechanism of the plating apparatus of the present invention.
FIG. 9 is a diagram showing a configuration of a to-be-plated substrate mounting mechanism of the plating apparatus of the present invention.
FIG. 10 is a view showing another configuration example of the plating tank of the plating apparatus of the present invention.
FIG. 11 is a diagram showing a configuration example of a conventional plating apparatus.
FIG. 12 is a diagram showing a configuration example of a conventional plating apparatus.
[Explanation of symbols]
    1 Plating jig
    2 Substrate to be plated
    3 Plating solution
    4 bubbles
    10 Plating equipment
    11 Plating tank
    12 Upper header
    13 Lower header
    14 Pump
    15 Constant temperature unit
    16 filters
    17 Plating tank body
    18 Side plate
    19 Substrate to be plated
    20 Packing
    21 Anode electrode
    22 Shield plate
    23 Plating solution
    24 Plating power supply
    25 plating circulation tank
    26 Flow control valve
    27 Flow control valve
    28 Flow control valve
    29 Ring (washer)
    30 electrodes (contact plate)
    31 screws
    32 Bracket
    33 sensors
    34 Cylinder for locking
    35 Tank open / close member
    36 Locking member
    37 Hinge mechanism
    38 Cylinder for opening and closing the tank
    39 Locking protrusion
    40 Hinge mechanism
    41 Support member
    42 Bracket
    43 pins
    44 Claw drive cylinder
    45 Nail for holding substrate to be plated
    46 Nail for holding substrate to be plated
    47 Roller
    48 Claw pressing member
    49 members
    50 rods
    51 Spring
    52 Connecting member
    53 pins
    54 Contact member
    55 O-ring
    56 spaces

Claims

A plating tank main body and a side plate that opens and closes the opening of the plating tank main body, with the substrate to be plated held on the side plate, the opening of the plating tank main body is closed, and the plating tank main body and the side plate are Introducing a plating solution into the formed space, a plating method for a substrate for plating on the plating surface of the substrate to be plated,
A plating method for a substrate, comprising flowing the plating solution in parallel to a plating surface of the substrate to be plated and reversing the flow direction of the plating solution .

In the plating method of the board | substrate of Claim 1,
After the plating of the substrate to be plated, the plating solution is discharged from the space formed between the plating tank main body and the side plate, and the substrate is cleaned by introducing a cleaning solution into the space after discharging. Method.

In the plating method of the board | substrate of Claim 2,
A substrate plating method, wherein after the cleaning, a drying gas is introduced into a space formed between the plating tank main body from which the cleaning liquid has been discharged and the side plate and dried.

A substrate plating apparatus that accommodates a substrate to be plated in a sealed plating tank, introduces a plating solution into the plating tank, and performs plating on the plating surface of the substrate to be plated,
The plating tank comprises a plating tank body and a side plate that opens and closes an opening of the plating tank body,
The side plate is provided with a holding mechanism for holding the substrate, and a packing is provided at the opening / closing part of the plating tank body,
With the opening of the plating tank body closed by the side plate, the peripheral surface of the substrate to be plated mounted on the side plate is in contact with the packing, and the plating solution is placed between the plating tank body and the substrate to be plated. Forming a plating solution flow path that flows parallel to the plating surface of the substrate to be plated;
An apparatus for plating a substrate, comprising plating solution flow control means for reversing the flow direction of a plating solution parallel to the plating surface of the substrate to be plated flowing through the plating solution flow path .

In the board | substrate plating apparatus of Claim 4 ,
A plating apparatus for a substrate, wherein the plating surface of the substrate to be plated is configured to be held in a posture inclined with respect to a vertical surface.

In the board | substrate plating apparatus of Claim 4 ,
A substrate plating apparatus comprising: means for inclining the plating surface of the substrate to be plated so as to face upward in a range of 30 ° from the vertical; and performing plating in a state in which the substrate to be plated is inclined in this range .

In the board | substrate plating apparatus of any one of Claims 4 thru | or 6 ,
A substrate plating apparatus, wherein a sensor for detecting mounting of a substrate to be plated is provided in the plating tank.