KR100300653B1 - Liquid Crystal Display Device, Liquid Crystal Display Apparatus of Parallel Electric Field Type and Liquid Crystal Display Apparatus of Reflective Type - Google Patents

Abstract

An object of the present invention is to provide a liquid crystal display device and a liquid crystal display device which are free from deterioration of liquid crystals by a third conductor and have no display defect or a decrease in reliability. In the liquid crystal display device according to one embodiment of the present invention, the gate terminal and the gate wiring are connected by a material having better corrosion resistance among the first conductor and the second conductor used as the material of the source wiring. In addition, when the source terminal and the source wiring are connected, the conversion unit formed by connecting the first conductor and the second conductor through a third conductor at a connection portion of the first conductor and the second conductor In the liquid crystal display element provided, the conversion part is covered with the said sealing material in the area | region in which the said sealing material is formed, It is characterized by the structure.

Description

Liquid Crystal Display Device, Liquid Crystal Display Apparatus of Parallel Electric Field Type and Liquid Crystal Display Apparatus of Reflective Type

The present invention relates to an active matrix liquid crystal display device.

In recent years, the liquid crystal display device has attracted attention as a display instead of the CRT, and improvements have been made toward higher image quality and larger screens. For this reason, a new material is used, and the manufacturing process and structure which match this are examined.

Hereinafter, an example of the above-mentioned conventional liquid crystal display device will be described with reference to the accompanying drawings.

Fig. 10 is an explanatory cross-sectional view of a main portion of a TFT array substrate of a liquid crystal display element used in a conventional liquid crystal display device. In the figure, 201 is a TFT portion, 202 is a gate source crossing portion, 203 is a storage capacitor portion, 17 is a conversion portion, 27 is a pixel electrode, 60 is a first conductor, and 61 is a second conductivity. Sieve and 54 is the third conductor.

A conventional liquid crystal display element is composed of a TFT array substrate, an opposing substrate disposed to face the TFT array substrate, and a liquid crystal sandwiched between the two substrates, and the periphery of the two substrates is bonded by a sealing material. On this TFT array substrate, a plurality of mutually parallel gate wirings and a plurality of mutually parallel source wirings intersecting each of the gate wirings are provided through gate insulating films provided on the gate wirings. The partitioned area is a pixel. Each pixel is provided with a pixel electrode and a thin film transistor (hereinafter, TFT) in an array form. An alignment film is provided to cover these gate wirings, source wirings, pixel electrodes and TFTs (channel etch type in this conventional example). On the other hand, on the opposing substrate, a color filter, a black matrix and an alignment film are provided corresponding to the pixels. As the liquid crystal, a known liquid crystal material is used.

In order to drive such liquid crystal, a driving circuit is provided around the liquid crystal display element. In addition, a backlight may be provided behind the liquid crystal display device.

In order to connect the pixel electrode or TFT provided on the TFT array substrate and the driving circuit, various conductors and contact holes are provided on the TFT array substrate so as to be connected to the gate wiring and the source wiring.

Fig. 11 is a plan explanatory diagram showing the arrangement of wirings, terminals, and the like on the TFT array substrate. In the drawing, 12 is a gate wiring, 13 is a source wiring, 72 is a gate terminal, 73 is a source terminal, 60 is a first conductor, 61 is a second conductor, 53 is a third conductor, and 17 is a converter. It is shown. The right and lower sides of the dashed-dotted line L are display areas.

As shown in FIG. 11, the gate wiring 12 and the gate terminal 72 are connected to the first conductor 60, while the source wiring 13 and the source terminal 73 are the third conductor 54. The first conductor 60 and the second conductor 61 are connected to each other through the first conductor 60 and the second conductor 61. This connection system is because the material for connection with the terminal is made of a material having excellent corrosion resistance or a material having low wiring resistance. In the example shown in the figure, the gate wiring is made of the material of the first conductor, the source wiring is made of the material of the second conductor, and the material of the gate wiring is excellent in corrosion resistance. In this case, the conversion section 17 to which the first conductor and the second conductor are connected via the third conductor is provided on the source wiring side.

FIG. 12 is a cross-sectional explanatory diagram showing a connection between such a conductor and a contact hole, and FIG. 13 is a cross-sectional explanatory diagram showing an example in which the connection is provided in contact with a liquid crystal.

12 and 13, 21 is an insulating substrate (hereinafter simply referred to as a substrate) using an insulating material such as glass, and 60 is a first conductor formed on the substrate 21 using a conductor such as Cr, 61 A second conductor formed on the substrate 21 using a conductor such as silver Cr, 23 a first insulating film formed of silicon nitride, etc., 102 a second insulating film formed of silicon nitride, etc., 103c a first conductor ( 60 is a contact hole formed on the second conductor 103d is a contact hole formed on the second conductor 61, and 54 is a first conductor 60 and a second conductor 61 via the contact hole 103c and the contact hole 103d. A third conductor using a conductor such as Cr to connect a third conductor, 17 is a conversion unit for connecting the first conductor 60 and the second conductor 61 by converting the material by the third conductor 54 Denotes a liquid crystal, 51 denotes a sealing material, and 53 denotes an opposing substrate.

The conversion unit 17 shown in FIG. 12 does not have a passivation film such as silicon nitride on the third conductor 54. For this reason, in the liquid crystal display apparatus which has the said conversion part 17, the problem as described below arises.

It demonstrates using FIG. The first conductor 60 is a wiring formed from a source wiring material and connected to an external terminal, and the second conductor 61 is a wiring formed from a gate wiring material and connected to an external terminal, and the third conductor 54 has a function of connecting the first conductor and the second conductor. The reason for adopting such a structure is that (1) when the source wiring material is more corrosive than the gate wiring material, as described above, the wiring connected to the external terminal needs to be formed of the gate wiring material, and (2) the source wiring material. And a step of forming a contact hole for directly connecting an external terminal formed of the gate wiring material with the gate wiring material. The third conductor 54 is formed of the same material as the pixel electrode for applying a voltage to the liquid crystal in the display area, and an insulating film is provided on the pixel electrode to reduce the loss of the voltage applied to the liquid crystal. not. Therefore, in order to cover the third conductor with an insulating film, a new process occurs and an increase in cost occurs, so that the third conductor is provided and exposed as the uppermost layer. In the liquid crystal display device in which the conversion unit 17 is placed in direct contact with the liquid crystal 50 as shown in FIG. 13, the third conductor 54 of the conversion unit 17 is in contact with the liquid crystal 50. The signal applied to the first conductor 60 or the second conductor 61 is applied to the liquid crystal 50 using the third conductor 54 as an electrode. For this reason, the liquid crystal in the vicinity of the third conductor 54 deteriorates, resulting in poor display and lower reliability.

In addition, when the gate wiring material is made of a material which is more likely to corrode than the source wiring material, it is necessary to convert the gate wiring into a wiring formed of the source wiring material and connect it with an external terminal. In this case, the gate wiring needs to be converted using a third conductor in the wiring subsequent to the external terminal formed of the source wiring material. For this reason, similarly to the structure shown in Fig. 13, since the third conductor is in direct contact with the liquid crystal, the liquid crystal near the third conductor 54 is deteriorated, resulting in poor display and lower reliability.

In the conventional liquid crystal display device, as described above, since the third conductor 54 of the converter 17 contacts the liquid crystal, the reliability is lowered. SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and to provide a highly reliable liquid crystal display device and a liquid crystal display device.

1 is a partial cross-sectional view of a liquid crystal display device according to an embodiment of the present invention;

2 is a partial cross-sectional view of a liquid crystal display device according to still another embodiment of the present invention;

3 is a partial cross-sectional view of a liquid crystal display device according to still another embodiment of the present invention;

4 is a partial cross-sectional view showing a liquid crystal display device according to still another embodiment of the present invention in the order of manufacturing process;

5 is a partial cross-sectional view showing a liquid crystal display device according to still another embodiment of the present invention in the manufacturing process sequence;

6 is a cross-sectional explanatory diagram of a thin film transistor according to still another embodiment of the present invention;

7 is a cross-sectional explanatory diagram of a thin film transistor according to still another embodiment of the present invention;

8 is a cross-sectional explanatory diagram of a thin film transistor according to still another embodiment of the present invention;

9 is a cross-sectional explanatory diagram of a thin film transistor according to still another embodiment of the present invention;

10 is a cross-sectional explanatory diagram of a conventional liquid crystal display device;

11 is a plan explanatory diagram of a conventional liquid crystal display device;

12 is a cross-sectional explanatory diagram of a conventional liquid crystal display device;

13 is a cross-sectional explanatory diagram of a conventional liquid crystal display element.

Explanation of symbols on the main parts of the drawings

17 conversion portion 21 insulating substrate

23: first insulating film 50: liquid crystal

51: sealing material 53: opposing substrate

54: third conductor 60: first conductor

61: second conductor 103a, 103b, 103c, 103d: contact hole

The liquid crystal display device according to the first embodiment of the present invention is composed of a TFT array substrate, a counter substrate facing the TFT array substrate, and a liquid crystal interposed between the TFT array substrate and the counter substrate, and (a) the TFT. The periphery of the array substrate and the opposing substrate is joined with a sealing material, and (b) a pixel electrode and a channel etched TFT are disposed in each pixel disposed on the TFT array substrate and partitioned by the gate wiring and the source wiring crossing each other. (C) an alignment layer is formed to cover the display area in which the gate wiring, the source wiring, the pixel electrode, and the channel-etched TFT are arranged in a matrix form, and (d) a gate terminal and a source terminal in the periphery of the display region. Is provided, and (e) among the first conductor used as the material of the gate wiring and the second conductor used as the material of the source wiring, more When an extension line to the gate terminal is formed by a material having excellent corrosion resistance, the gate terminal and the gate wiring are connected, and an extension line to the source terminal is formed so that the source terminal and the source wiring are connected. A liquid crystal display device comprising a converting portion formed by connecting the first conductor and the second conductor through a third conductor at a connecting portion of the first conductor and the second conductor, wherein the converting portion is the sealing material. The sealing material is provided in the area | region where it is formed.

A parallel field type liquid crystal display device according to a second embodiment of the present invention comprises an electrode substrate, a counter substrate facing the electrode substrate, and a liquid crystal interposed between the electrode substrate and the counter substrate, wherein the electrode substrate and the counter substrate are provided. Has a liquid crystal display element formed by bonding a sealing material around it, a driving circuit for driving the liquid crystal, and a backlight at least, and (a) a pair of electrodes composed of at least a first electrode and a second electrode on the electrode substrate are constant (B) the liquid crystal is driven by an electric field formed between the first electrode and the second electrode, and (c) an alignment layer covering the display area where the first electrode and the second electrode are disposed. And (d) a first terminal and a second terminal are provided around the display area, and (e) a first conductor and a second electric field used as a material of the first electrode. Of the second conductors used as the pole material, an extension line to the first terminal is formed by a material having better corrosion resistance, so that the first terminal and the first electrode are connected to the second terminal. When the extension line is formed so that the second terminal and the second electrode are connected, the first conductor and the second conductor form a third conductor at the connection portion of the first conductor and the second conductor. In the parallel field type liquid crystal display device provided with a conversion unit connected via a connection, the conversion unit is provided covered with the sealing material.

A reflective liquid crystal display device according to a third embodiment of the present invention is composed of a TFT array substrate, an opposing substrate facing the TFT array substrate, and a liquid crystal interposed between the TFT array substrate and the opposing substrate, wherein the TFT array At least one liquid crystal display element formed by joining a substrate and a counter substrate with a sealing material and a driving circuit for driving the liquid crystal, and (a) partitioned by a gate wiring and a source wiring disposed on the TFT array substrate and crossing each other. A pixel electrode and a TFT made of a metal film are disposed on each pixel, and (b) an alignment film is provided to cover the display area formed by forming the gate wiring, the source wiring, the pixel electrode and the TFT in a matrix form, and (c A gate terminal and a source terminal are provided in the periphery of the display area, and (d) a first conductive material used as a material of the gate wiring. And from the second conductor used as the material of the source wiring, an extension line to the gate terminal is formed by a material having better corrosion resistance, so that the gate terminal and the gate wiring are connected to the source terminal. When an extension line of is formed and the source terminal and the source wiring are connected, at the connection portion of the first conductor and the second conductor, the first conductor and the second conductor pass through a third conductor. In the reflection type liquid crystal display device provided with the conversion part connected, the said conversion part is provided in the area | region where the said sealing material is formed, and is covered by the said sealing material.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

(Example 1)

In the present embodiment, an example of a liquid crystal display element in which the above-described converting portion is formed by covering the sealing material in a region where the sealing material is formed by using a sealing material for bonding the TFT array substrate and the counter substrate will be described.

1 is a partial cross-sectional view of a liquid crystal display device according to the present embodiment.

In Fig. 1, 21 is an insulating substrate using an insulating material such as glass, 60 is a first conductor formed on the substrate 21 using a conductor such as Cr, and 61 is a substrate using a conductor such as Cr. A second conductor formed on 21, 23 is a first insulating film formed of silicon nitride or the like, 102 is a second insulating film formed of silicon nitride or the like, 103c is a contact hole formed on the first conductor 60, 103d is The contact hole 54 formed on the second conductor 61 uses a conductor such as Cr for connecting the first conductor 60 and the second conductor 61 via the contact hole 103c and the contact hole 103d. 3rd conductor, 17 is a conversion part which converts and connects the 1st conductor 60 and the 2nd conductor 61 by the 3rd conductor 54, 50 is a liquid crystal, 51 is a sealing material, 53 Is the opposing substrate.

Except for the configuration of the liquid crystal display element as described above, the description thereof is the same as in the conventional liquid crystal display element, and the description thereof is omitted. In addition, about the element shown in drawing, the same description is abbreviate | omitted about the same thing as before.

Describe the process flow. First, any one metal such as Cr, Al, Ti, Ta, Mo, W, Ni, Cu, Au, or Ag on the insulating substrate 21, or an alloy or ITO having at least one of them as a main component A conductive film using a transparent conductive film material or a multilayer film using these conductive materials is formed into a film by sputtering, vapor deposition, or the like, and then the first conductor 60 having a desired shape is formed by photolithography and etching. Subsequently, the first insulating film 23 made of an insulating film using silicon nitride or silicon oxide or a multilayer film using the same is formed by, for example, plasma CVD, atmospheric pressure CVD, and reduced pressure CVD. Subsequently, any one metal such as Cr, A1, Ti, Ta, Mo, W, Ni, Cu, Au, or Ag, or an electrically conductive film using a material for transparent conductive film such as an alloy containing at least one of them or ITO Or the multilayer film using these electroconductive materials is formed into a film by sputtering method, vapor deposition method, etc., and then the 2nd conductor 61 of a desired shape is formed by photolithography and processing. Subsequently, a second insulating film 102 made of silicon nitride, silicon oxide, an inorganic insulating film or an organic resin, or a multilayer film using these films is formed by, for example, plasma CVD, atmospheric pressure CVD, or reduced pressure CVD to form a film. The contact holes 103c and 103d are formed by a process. Next, a conductive film made of any one metal such as Cr, Al, Ti, Ta, Mo, W, Ni, Cu, Au or Ag, or an alloy containing at least one of these as a main component or a transparent conductive film material such as ITO Alternatively, a multilayer film using these conductive materials is formed into a film by sputtering, vapor deposition, or the like, and then the third conductor 54 having a desired shape is formed by photolithography and etching. In the converter 17, the first conductor 60 and the second conductor 61 are connected to the third conductor 54 via the contact hole 103c and the contact hole 103d. Furthermore, the liquid crystal display device is manufactured by bonding the liquid crystal 51 between the substrate 21 and the counter substrate 53 with the sealing material 51 therebetween. At this time, the third conductor 54 of the converter 17 is covered with a sealing material.

As a sealing material, thermosetting resin or photocurable resin can be used, for example, as an example of a thermosetting sealing material, XN31 by Mitsui Totsuka Chemical Co., Ltd. or Kyoritsuka as an example of a photocuring sealing material And XNR 5612 manufactured by Kakusankyo Co., Ltd., X-765A1 or Nagase Chiba Co., Ltd. Spacers, such as glass rods, are mixed with this sealing material so as to obtain a desired substrate spacing, and are formed on the conversion section by screen printing or the like.

In the liquid crystal display device according to the present embodiment, since the third conductor 54 of the converter 17 is covered with a sealing material, the portion where the liquid crystal 50 is present and the third conductor 54 are present. The parts to be separated. For this reason, the signal applied to the first conductor 60 or the second conductor 61 is not applied to the liquid crystal 50 using the third conductor 54 as an electrode and the third conductor 54. The liquid crystal near) does not deteriorate.

In addition, since the third conductor 54 is covered with the sealing portion, corrosion of the converter 17, physical damage, or short-circuit with the outside of the display device do not occur.

Therefore, a highly reliable liquid crystal display element can be obtained.

In addition, although the third conductor can be formed as a separate layer and the uppermost layer through the first conductor, the second conductor and the insulating film, the same effect can be obtained even if the first insulating film 23 is omitted. 1B, the same effect is acquired also in the structure which converts the 1st conductor 60 which is wiring inside a panel into the 2nd conductor 61 which is wiring outside a panel.

In the description of the following embodiments, only differences from the first embodiment will be described, and the description thereof will be omitted for the same or common matters.

(Example 2)

2 is a partial cross-sectional view of a liquid crystal display device according to the present embodiment. The same elements as those shown in Fig. 1 are denoted by the same reference numerals. In addition, 52 is an oriented film.

In the present embodiment, as shown in FIG. 2, the second conductor 54 of the conversion unit 17 has a specific resistance of 10 ⁹ Ωcm or more instead of the sealing material 51 in the first embodiment. It is covered by the alignment film 52, etc.

An alignment film can be formed on a conversion part by a well-known film formation method. Since the structure and manufacturing method other than these points are the same as that of Example 1, description thereof is abbreviate | omitted.

In the present embodiment, since the third conductor 54 of the conversion unit 17 is covered by the alignment film 52, the portion where the liquid crystal 50 is present and the portion where the third conductor 54 is present. Is separated. For this reason, the signal applied to the first conductor 60 or the second conductor 61 is not applied to the liquid crystal 50 using the third conductor 54 as an electrode, and the third conductor ( 54) The liquid crystal in the vicinity does not deteriorate.

In addition, since the third conductor 54 is covered by the alignment layer 52, the conversion unit 17 is corroded, and physical damage or short-circuit with the outside of the display device does not occur.

Therefore, a highly reliable liquid crystal display element can be obtained.

The same effect can be obtained even if the first insulating film 23 is omitted. In addition, the same effect is obtained also in the structure which converts the 1st conductor 60 which is wiring inside a panel into the 2nd conductor 61 which is wiring outside a panel.

(Example 3)

FIG. 3 is a partial cross-sectional explanatory view of liquid crystal display elements according to Examples 3 to 5 of the present invention, in which the same elements as those shown in FIGS. 1 and 2 are denoted by the same reference numerals.

In this embodiment, as shown in FIG. 3A, the third conductor 54 of the converter 17 is made to be outside the sealing material. Since the structure and manufacturing method other than this point are the same as Example 1, the description is abbreviate | omitted.

In the present embodiment, since the third conductor 54 of the conversion unit 17 is outside the region where the sealant of the alignment film 55 is formed, the portion where the liquid crystal 50 is present and the third conductor 54 are present. ) Are separated. For this reason, the signal applied to the first conductor 60 or the second conductor 61 is never applied to the liquid crystal 50 using the third conductor 54 as an electrode, and the liquid crystal deteriorates. none.

Therefore, a highly reliable liquid crystal display element can be obtained. In addition, the same effect is obtained also in the structure which converts the 1st conductor 60 which is wiring inside a panel into the 2nd conductor 61 which is wiring outside a panel.

(Example 4)

In the present embodiment, in addition to the third embodiment, the third conductor 54 is covered by the opposing substrate 53 as shown in FIG. 3B. Since the structure and manufacturing method other than this point are the same as that of Example 1, the description is abbreviate | omitted.

In this embodiment, the third conductor 54 is covered by the opposing substrate 53, whereby physical damage due to contact or short circuit to the outside of the display device can be prevented.

Therefore, a highly reliable liquid crystal display element can be obtained. In addition, the same effect is obtained also in the structure which converts the 1st conductor 60 which is wiring inside a panel into the 2nd conductor 61 which is wiring outside a panel.

(Example 5)

In the present embodiment, in addition to the fourth embodiment, as shown in Fig. 3C, the same material as the alignment film made of any one of an insulating material 55 having a specific resistance of 10 ⁹ Ωcm or more, for example, polyimide, polyvinyl alcohol, or the like, is based on silicon. The third conductor 54 is covered with resin, acrylic resin, or the like.

The film | membrane using these insulating materials can be formed on a conversion part by a well-known formation method. Since the structure and manufacturing method other than this point are the same as Example 1, the description is abbreviate | omitted.

In this embodiment, by covering the third conductor 54 with the insulating material 55, it is possible to prevent corrosion of the converter 17, physical damage, or short circuit to the outside of the liquid crystal display device.

Therefore, a highly reliable liquid crystal display element can be obtained. In addition, the same effect is obtained also in the structure which converts the 1st conductor 60 which is wiring inside a panel into the 2nd conductor 61 which is wiring outside a panel.

(Example 6)

In this embodiment, Embodiments 4 and 5 are combined. That is, the material is made of the same material as that of the counter substrate 53 and the insulating material 55 having a specific resistance of 10 ⁹ Ωcm or more, for example, an alignment film made of any one of polyimide or polyvinyl alcohol, or a silicone resin, an acrylic resin, or the like. 3 Conductor 54 is covered. Since the structure and manufacturing method other than this point are the same as that of Example 1, the description is abbreviate | omitted.

In the present embodiment, the third conductor 54 is covered by the insulating material 55, thereby preventing corrosion of the converter 17, physical damage, or leakage of the external device.

Therefore, a highly reliable liquid crystal display element can be obtained.

(Example 7)

In this embodiment, a liquid crystal display device using the liquid crystal display element according to any one of Examples 1 to 6 will be described.

4 and 5 are cross-sectional explanatory views showing the manufacturing method of the liquid crystal display device according to Examples 1 to 6 in the order of the steps.

In the figure, 201 is a TFT portion (channel etch type TFT), 202 is a gate source intersection portion, 17 is a conversion portion, 203 is a holding capacitor portion, and the same elements as those shown in Figs. The sign is shown.

4 and 5, 21 is a substrate using an insulating material such as glass, 22 is a gate electrode connected to the gate wiring 12 formed on the substrate 21 using a metal such as Cr, and 16 is Cr or the like. The storage capacitor common wiring formed on the substrate 21 by using a metal of the same, 23 is a gate insulating film made of silicon nitride or the like formed to cover the gate wiring 12, the gate electrode 22, and the storage capacitance common wiring 16, 24 is a semiconductor film using a semiconductor such as non-doped amorphous silicon formed to be in contact with the upper portion of the gate insulating film 23, 25 is formed in connection with the semiconductor film 24 and is an active part that is part of the film. A contact film doped with a semiconductor film such as silicon (Si) with an impurity such as phosphorus (P) having a region 26 in which the upper portion of the region is removed by etching, etc., 27 is a transparent conductive film such as indium tin oxide (ITO) Formed and applied voltage to the liquid crystal A pixel electrode used for the purpose, 28 is a contact electrode 25 and a source electrode connected to the source wiring 13, 29 a drain electrode formed to be in contact with the contact film 25, 102 covers the entire device An interlayer insulating film formed of a silicon nitride film or the like, 103a is a contact hole formed in the interlayer insulating film 102 to connect the drain electrode 29 and the pixel electrode 27, and 103b is a pixel electrode 27 and a storage capacitor electrode 101. The contact hole 103c formed in the interlayer insulating film 102 to connect the first electrode 60 formed of the same material as the gate line and the second conductor 61 formed of the same material as the source line include the pixel electrode 27. Is a contact hole formed in the interlayer insulating film 102 on the gate wiring 12 to connect with the third conductor formed of the same material, and 103d is a source wiring 12 for connecting the source wiring 13 and the gate wiring 12. Is a contact hole formed in the interlayer insulating film 102.

In addition, 60 is a first conductor formed on the substrate 21 using the same material as the gate wiring, 61 is a second conductor formed on the substrate 21 using the same material as the source wiring, and 103c is a first conductor. A contact hole formed on the conductor 60, 103d is a contact hole formed on the second conductor 61, 54 is the first conductor 60 and the second conductor (through the contact hole 103c and the contact hole 103d) The third conductor formed using the same material as the pixel electrode connecting 61, and the gate insulating film 23 and the interlayer insulating film 102 correspond to the first insulating film and the second insulating film shown in Embodiments 1-3. .

Describe the process flow. First, as shown in FIG. 4A, any one metal such as Cr, Al, Ti, Ta, Mo, W, Ni, Cu, Au, or Ag or an alloy containing at least one of them as a main component on the insulating substrate 21 is shown. Alternatively, a conductive film using a transparent conductive film material such as ITO or a multilayer film using these conductive materials is formed by sputtering, vapor deposition, or the like, and then the gate wiring 12, the gate electrode 22, and the common storage capacitor are common by photolithography and processing. The wiring 16 is formed. Subsequently, as shown in FIG. 4B, a gate insulating film 23 such as silicon nitride, a semiconductor film 24 such as amorphous silicon or polycrystalline polysilicon, and n ⁺ having doped with impurities such as P in a high concentration in the case of n-type TFT A contact film 25 such as amorphous silicon or n ⁺ polycrystalline polysilicon is continuously formed into a film by, for example, plasma CVD, atmospheric pressure CVD, or reduced pressure CVD. Next, the contact film 25 and the semiconductor film 24 are processed into island shapes. A conductive film using any one metal such as Cr, A1, Ti, Ta, Mo, W, Ni, Cu, Au, or Ag, or a transparent conductive film material such as an alloy or ITO containing at least one of them as a main component, or these conductivity After forming a multilayer film using a material by sputtering or vapor deposition, a source electrode 28, a drain electrode 29, and a storage capacitor 101 are formed by photolithography and microfabrication techniques (FIG. 4C). The source wiring and the drain wiring formed of the same material as the source electrode and the drain electrode are also formed at the same time at this time. The contact layer 25 was etched using the source electrode 28 and the drain electrode 29 or the photoresist formed thereon as a mask and removed from the channel region to form the region 26. Subsequently, an interlayer insulating film 102 made of silicon nitride, silicon oxide, an inorganic insulating film, or an organic resin is formed to form a film, and contact holes 103a, 103b, 103c, and 103d are formed by the photolithography and subsequent etching (FIG. 5A). ). Finally, a conductive film using a transparent conductive film material such as Cr, A1, Ti, Ta, Mo, W, Ni, Cu, Au or Ag, or an alloy containing at least one of them as a main component or ITO Alternatively, the pixel electrode 27 is formed by forming and processing these multilayer film conductive materials (FIG. 5B). The pixel electrode is connected to the drain electrode 29 through the contact hole 103a. In addition, the pixel electrode is connected to the storage capacitor electrode 101 through the contact hole 103b. The transparent conductive film used for the pixel electrode 27 is a wiring 12 formed of a material (hereinafter, referred to as a gate material) for the gate electrode and a material used for the source electrode through the contact hole 103c and the contact hole 103d (hereinafter, The wiring 13 formed of the source material) is short-circuited. The thin film transistor integrated device can be manufactured by the above. The TFT array substrate and the opposing substrate on which the thin film transistor integrated device is formed are bonded with a sealing material so as to sandwich the liquid crystal. The counter substrate is formed by forming a known color filter, black matrix, alignment film, or the like on the substrate. In addition, a liquid crystal display device is manufactured by connecting a gate line driver circuit, a source line driver circuit, and a power supply for the storage capacitor common wiring to the gate wiring, the source wiring, and the common capacitance of the common wiring, respectively, and providing a backlight or the like.

In the liquid crystal display device having the above-described configuration, a wiring or an electrode formed of a gate material as the first conductor in the first to sixth embodiments, a wiring or an electrode formed of a source material of the second conductor, and a third conductor The wiring and the electrode formed from the electrode material were used.

Alternatively, in the liquid crystal display device having the above-described configuration, a wiring or an electrode in which the first conductor is used as the source material in the first to sixth embodiments, a wiring or an electrode in which the second conductor is made of the gate material, and a second conductor The wiring and the electrode formed of the pixel electrode material are used.

In the liquid crystal display device of the present invention, in addition to the effects shown in Examples 1 to 6, the following effects are obtained.

For example, when the gate material is deteriorated in corrosion resistance, mechanical strength, or contact resistance with respect to the source material (e.g. gate material = any one metal such as Al or Cu, or at least one of them) A conductive film using an alloy or a multilayer film of these, a source material = any one metal such as Cr or Ti, or a conductive film using an alloy containing at least one of them as a main component, or a multilayer film of these, or the conductive film and ITO By using the present embodiment, by converting the gate wiring into a wiring formed from a source material, reliability can be improved, and a low cost and high reliability liquid crystal display device can be provided.

Conversely, when the source material is inferior in corrosion resistance, mechanical strength, or contact resistance to the gate material, the same effect can be obtained by converting the source wiring into a wiring formed of the gate material.

(Example 8)

It is the structure containing the at least 1 of the said Examples 1-7, and is an example of the parallel field type liquid crystal display device of the system which makes the direction of the electric field applied to a liquid crystal parallel to a board | substrate. 6 is a cross-sectional explanatory diagram showing the configuration of a parallel field type liquid crystal display device according to the present embodiment. In Fig. 6, 81 is a comb-shaped electrode, 83 is a liquid crystal molecule, 84a is an electrode substrate on which a comb-shaped electrode is formed, 84b is an opposing substrate facing the electrode substrate 84a, and 86 is an AC voltage power source.

In the parallel field type liquid crystal display device according to the present embodiment, a liquid crystal comprising an electrode substrate, an opposing substrate facing the electrode substrate, and a gap between the electrode substrate and the opposing substrate, wherein the periphery of the electrode substrate and the opposing substrate is bonded with a sealing material. And at least a driving circuit for driving the liquid crystal, and a backlight. On the electrode substrate, a pair of electrodes composed of at least a first electrode and a second electrode are arranged at a predetermined distance, and an alignment film is provided to cover the first electrode and the second electrode. In addition, a first terminal and a second terminal are provided around the display area in which the first electrode and the second electrode are arranged to connect to the outside. In order to connect a 1st terminal and a 1st electrode, or to connect a 2nd terminal and a 2nd electrode, it connected with the 1st conductor connected to the said 1st electrode, and 2nd electrode like Example 1-7. The conversion part which consists of 3rd conductors which connect a 2nd conductor is provided. Here, as in Examples 1 to 7, the converter is disposed covered with the sealing material or the alignment film, or disposed outside the region where the sealing material is formed.

(Example 9)

The present embodiment has a structure including at least one of the above embodiments 1 to 7, and a conductive film using a pixel electrode of any one metal such as Al, Cr or Ta, or an alloy containing at least one of them as a main component, or It is an example of the reflection type liquid crystal display device which consists of a multilayer film using these. 7 is a cross-sectional explanatory diagram of a TFT array substrate used in the reflective liquid crystal display device according to the present embodiment. In the figure, 32 is an etching stopper, and the same code | symbol is attached | subjected to the element similar to the element shown in FIGS. In this TFT array substrate, pixel electrodes are also provided on the TFT.

In the reflective liquid crystal display device according to the present embodiment, a TFT array substrate, an opposing substrate opposing the TFT array substrate, and the TFT array substrate and the opposing substrate are sandwiched between the TFT array substrate and the opposing substrate and bonded together with a sealing material. And at least a driving circuit for driving the liquid crystal. A pixel electrode and a TFT made of a metal film are disposed on each pixel disposed on the TFT array substrate and partitioned by gate lines and source wiring crossing each other, so that an alignment layer is formed to cover the gate wiring, the source wiring, the pixel electrode, and the TFT. It is installed. In the same manner as in the first to seventh embodiments, a conversion section including a third conductor connecting the first conductor connected to the gate wiring and the second conductor connected to the source wiring is provided. Here, similarly to Examples 1-7, the said conversion part is arrange | positioned covered with the said sealing material or the orientation film, or is arrange | positioned outside the area | region where the said sealing material is formed. Therefore, the same effect as in Example 1 can be obtained, and a highly reliable liquid crystal display device can be obtained.

(Example 10)

It is the structure containing the at least 1 of the said Examples 1-7, and is an example of the liquid crystal display device which has TFT of an etching stopper system. In the liquid crystal display device according to the present embodiment, TFTs used in Examples 1 to 7 are replaced with TFTs of an etching stopper method, and are the same as Examples 1 to 7 except this point. Fig. 8 is an explanatory cross-sectional view of a TFT of an etching stopper method according to the present embodiment, in which, 32 is a protective film and the same elements as those shown in Figs. 1 to 5 are denoted by the same reference numerals. The characteristic feature of this TFT is that the protective film 32 is provided on the semiconductor film 24 to form an etching stopper. Therefore, the same effect as in Example 1 can be obtained, and a highly reliable liquid crystal display device can be obtained.

(Example 11)

It is a structure containing at least one of the said Embodiments 1-7, and is an example of the liquid crystal display device which has a thin film transistor of a positive stagger system. In the liquid crystal display device according to the present embodiment, the TFTs used in Examples 1 to 7 are replaced with the TFTs of the regular staggering method, and are the same as those of Examples 1 to 7 except this point. Fig. 9 is an explanatory cross-sectional view of a TFT of a regular staggered system according to the present embodiment, where 33 is a light shielding film, 34 is an insulating film, and the same elements as those shown in Figs. The characteristic feature of the configuration of the positive staggered TFT is that the vertical relationship between the source electrode, the drain electrode, and the gate electrode is almost opposite to that of the TFTs used in Examples 1-7. Therefore, the same effect as in Example 1 can be obtained, and a highly reliable liquid crystal display device can be obtained.

(Example 12)

The liquid crystal display device including the eighth embodiment described above and an electrode for applying a voltage to the liquid crystal are formed of conductors of the same layer. The same effect as in Example 8 can be obtained except that the electrode for applying a voltage to the liquid crystal is formed of a conductor of the same layer, and a highly reliable liquid crystal display device can be obtained.

According to the liquid crystal display device according to the first embodiment of the present invention, a TFT array substrate, a counter substrate opposing the TFT array substrate, and a liquid crystal interposed between the TFT array substrate and the opposing substrate, are (a) the The periphery of the TFT array substrate and the opposing substrate is bonded with a sealing material, and (b) a pixel electrode and a channel etch type TFT are provided in each pixel disposed on the TFT array substrate and partitioned by the gate wiring and the source wiring crossing each other. And (c) an alignment layer is formed to cover the display area in which the gate wiring, the source wiring, the pixel electrode and the channel etch type TFT are arranged in a matrix form, and (d) a gate terminal and a peripheral portion of the display region. (E) of the first conductor used as the material of the gate wiring and the second conductor used as the material of the source wiring, provided with a source terminal. Further, an extension line to the gate terminal is formed by a material having better corrosion resistance, and the gate terminal and the gate wiring are connected, and an extension line to the source terminal is formed so that the source terminal and the source wiring are formed. In the liquid crystal display element which is provided with the conversion part which the said 1st conductor and the said 2nd conductor connected through the 3rd conductor in the connection part of the said 1st conductor and the said 2nd conductor when it is connected, The said Since the converter is disposed covered with the seal in the area where the seal is formed, it does not cause corrosion or physical damage to the converter or short-circuit with the outside of the display device. This provides an effect of obtaining a highly reliable liquid crystal display device.

According to a parallel field type liquid crystal display device according to a second embodiment of the present invention, an electrode substrate, an opposing substrate opposing the electrode substrate, and a liquid crystal interposed between the electrode substrate and the opposing substrate, are provided. At least a liquid crystal display device having a periphery of the opposing substrate bonded with a sealing material, a driving circuit for driving the liquid crystal, and a backlight is provided, and a pair of electrodes composed of at least a first electrode and a second electrode on the electrode substrate provides a predetermined distance. The liquid crystal is driven by an electric field formed between the first electrode and the second electrode, an alignment layer is formed to cover the display area formed by the first electrode and the second electrode, and the periphery of the display area. The first terminal and the second terminal are provided in the upper part of the first conductor and the second electrode used as the material of the first electrode. An extension line to the first terminal is formed by a material having better corrosion resistance among the second conductors used, so that the first terminal and the first electrode are connected, and an extension line to the second terminal is formed. When the second terminal is connected to the second electrode, the first conductor and the second conductor are connected via a third conductor at a connection portion of the first conductor and the second conductor. A parallel field type liquid crystal display device provided with a conversion unit comprising a conversion unit, wherein the liquid crystal display device is highly reliable because the conversion unit is covered with the sealing material and does not cause corrosion or physical damage to the conversion unit or short circuit to the outside of the display device. It has the effect of getting.

According to the reflection type liquid crystal display device according to the third embodiment of the present invention, it is composed of a TFT array substrate, a counter substrate facing the TFT array substrate, and a liquid crystal interposed between the TFT array substrate and the counter substrate, The TFT array substrate and the opposing substrate have a liquid crystal display element formed by bonding a sealing material and at least a driving circuit for driving the liquid crystal, and are partitioned by a gate wiring and a source wiring disposed on the TFT array substrate and crossing each other. A pixel electrode and a TFT made of a metal film are disposed in each pixel, and an alignment layer is formed to cover a display area formed by forming the gate wiring, the source wiring, the pixel electrode, and the TFT in a matrix form, and a gate is formed around the display area. A first conductor provided with a terminal and a source terminal and used as a material of the gate wiring; and Among the second conductors used as the material for the switching wiring, an extension line to the gate terminal is formed by a material having better corrosion resistance, the gate terminal and the gate wiring are connected, and the source terminal is connected to the source terminal. An extension line is formed, and when the source terminal and the source wiring are connected, the first conductor and the second conductor are connected to each other through the third conductor in the connecting portion of the first conductor and the second conductor. A reflective liquid crystal display device comprising a connected converter unit, which is connected to the seal member in a region where the seal member is formed, and thus does not cause corrosion or physical damage to the converter unit or short circuit to the outside of the display unit. This has the effect of obtaining a highly reliable liquid crystal display device.

Claims (3)

A TFT array substrate, a counter substrate facing the TFT array substrate, and a liquid crystal interposed between the TFT array substrate and the counter substrate, wherein the periphery of the TFT array substrate and the counter substrate are bonded with a sealing material, and the TFT array A pixel electrode and a channel etch type TFT are disposed in each pixel disposed on a substrate and divided by gate lines and source lines crossing each other, and the gate line, source line, pixel electrode, and channel etch type TFTs are arranged in a matrix form. An alignment film is provided to cover the display area formed, and a gate terminal and a source terminal are provided around the display area, and used as a material of the first conductor and the source wiring used as the material of the gate wiring. Among the second conductors, the connection to the gate terminal is made of a material having better corrosion resistance. When a line is formed to connect the gate terminal and the gate wiring and an extension line to the source terminal is formed so that the source terminal and the source wiring are connected, a connection portion of the first conductor and the second conductor is connected. The liquid crystal display device comprising a converting portion formed by connecting the first conductor and the second conductor through a third conductor, wherein the converting portion is formed by covering the sealing material in a region where the sealing material is formed. A liquid crystal display device characterized by the above-mentioned. A liquid crystal display device comprising an electrode substrate, an opposing substrate facing the electrode substrate, a liquid crystal interposed between the electrode substrate and the opposing substrate, wherein the periphery of the electrode substrate and the opposing substrate is bonded with a sealing material, and the liquid crystal An electric field formed between the first electrode and the second electrode, having a driving circuit for driving and at least a backlight, and a pair of electrodes composed of at least a first electrode and a second electrode on the electrode substrate at a predetermined distance; The liquid crystal is driven, and an alignment layer is formed to cover the display area where the first electrode and the second electrode are disposed, and a first terminal and a second terminal are provided around the display area. The one which is more excellent in corrosion resistance among the 1st conductor used as a material of a 1st electrode, and the 2nd conductor used as a material of a 2nd electrode. When an extension line to the first terminal is formed by a material so that the first terminal and the first electrode are connected and an extension line to the second terminal is formed so that the second terminal and the second electrode are connected, A parallel field type liquid crystal display device comprising: a converting portion formed by connecting the first conductor and the second conductor through a third conductor at a connection portion of the first conductor and the second conductor; And an additional portion covered with the sealing material. A liquid crystal display device comprising a TFT array substrate, an opposing substrate facing the TFT array substrate, a liquid crystal interposed between the TFT array substrate and the opposing substrate, and wherein the periphery of the TFT array substrate and the opposing substrate is bonded with a sealing material; A pixel electrode and a TFT made of a metal film are disposed in each pixel which has at least a driving circuit for driving the liquid crystal, and is partitioned by a gate wiring and a source wiring arranged on the TFT array substrate and intersecting with each other. An alignment film is provided to cover a display area in which wirings, source wirings, pixel electrodes, and TFTs are arranged in a matrix form, and gate terminals and source terminals are provided around the display area, and used as a material for the gate wirings. Among the second conductors used as the material of the first conductor and the source wiring, the beam When an extension line to the gate terminal is formed by a material having excellent corrosion resistance, the gate terminal and the gate wiring are connected, and an extension line to the source terminal is formed, and the source terminal and the source wiring are connected. A reflection type liquid crystal display device comprising: a converting portion formed by connecting the first conductor and the second conductor through a third conductor at a connection portion of the first conductor and the second conductor; And the conversion unit is provided to cover the sealing material in a region where the sealing material is formed.