KR100296564B1 - 비등방적티타네이트에칭방법 - Google Patents

비등방적티타네이트에칭방법 Download PDF

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Publication number
KR100296564B1
KR100296564B1 KR1019930006544A KR930006544A KR100296564B1 KR 100296564 B1 KR100296564 B1 KR 100296564B1 KR 1019930006544 A KR1019930006544 A KR 1019930006544A KR 930006544 A KR930006544 A KR 930006544A KR 100296564 B1 KR100296564 B1 KR 100296564B1
Authority
KR
South Korea
Prior art keywords
etching
radiation
titanate
irradiated
substrate
Prior art date
Application number
KR1019930006544A
Other languages
English (en)
Korean (ko)
Inventor
몬트에이.더글라스
하워드알.베라탄
스코트알.서머펠트
Original Assignee
윌리엄 비. 켐플러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 비. 켐플러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 비. 켐플러
Application granted granted Critical
Publication of KR100296564B1 publication Critical patent/KR100296564B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
KR1019930006544A 1992-04-20 1993-04-19 비등방적티타네이트에칭방법 KR100296564B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/871,863 1992-04-20
US07/871,863 US5238530A (en) 1992-04-20 1992-04-20 Anisotropic titanate etch

Publications (1)

Publication Number Publication Date
KR100296564B1 true KR100296564B1 (ko) 2001-10-24

Family

ID=25358327

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930006544A KR100296564B1 (ko) 1992-04-20 1993-04-19 비등방적티타네이트에칭방법

Country Status (3)

Country Link
US (1) US5238530A (US06235095-20010522-C00021.png)
KR (1) KR100296564B1 (US06235095-20010522-C00021.png)
TW (1) TW243465B (US06235095-20010522-C00021.png)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
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US5486698A (en) * 1994-04-19 1996-01-23 Texas Instruments Incorporated Thermal imaging system with integrated thermal chopper
US5478242A (en) * 1994-04-29 1995-12-26 Texas Instruments Incorporated Thermal isolation of hybrid thermal detectors through an anisotropic etch
US5424544A (en) * 1994-04-29 1995-06-13 Texas Instruments Incorporated Inter-pixel thermal isolation for hybrid thermal detectors
US5426303A (en) * 1994-04-29 1995-06-20 Texas Instruments Incorporated Thermal isolation structure for hybrid thermal detectors
US5457318A (en) * 1994-04-29 1995-10-10 Texas Instruments Incorporated Thermal detector apparatus and method using reduced thermal capacity
US5574282A (en) * 1994-06-30 1996-11-12 Texas Instruments Incorporated Thermal isolation for hybrid thermal detectors
US5653851A (en) * 1994-07-05 1997-08-05 Texas Instruments Incorporated Method and apparatus for etching titanate with organic acid reagents
US6280662B1 (en) 1994-07-22 2001-08-28 Raytheon Company Methods of fabrication of ceramic wafers
US5512748A (en) * 1994-07-26 1996-04-30 Texas Instruments Incorporated Thermal imaging system with a monolithic focal plane array and method
US5532484A (en) * 1994-09-09 1996-07-02 Texas Instruments Incorporated Defective pixel signal substitution in thermal imaging systems
US5559332A (en) * 1994-11-04 1996-09-24 Texas Instruments Incorporated Thermal detector and method
US5746930A (en) * 1995-01-03 1998-05-05 Texas Instruments Incorporated Method and structure for forming an array of thermal sensors
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US5626773A (en) * 1995-01-03 1997-05-06 Texas Instruments Incorporated Structure and method including dry etching techniques for forming an array of thermal sensitive elements
US5644838A (en) * 1995-01-03 1997-07-08 Texas Instruments Incorporated Method of fabricating a focal plane array for hybrid thermal imaging system
US5602043A (en) * 1995-01-03 1997-02-11 Texas Instruments Incorporated Monolithic thermal detector with pyroelectric film and method
US5705443A (en) * 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
US5708269A (en) * 1995-08-15 1998-01-13 Raytheon Ti Systems, Inc. Thermal detector and method
US6018414A (en) * 1996-03-04 2000-01-25 Raytheon Company Dual band infrared lens assembly using diffractive optics
US5852516A (en) * 1996-03-04 1998-12-22 Raytheon Ti Systems, Inc. Dual purpose infrared lens assembly using diffractive optics
US5796514A (en) * 1996-03-04 1998-08-18 Raytheon Ti Systems, Inc. Infrared zoom lens assembly having a variable F/number
US6249374B1 (en) 1996-03-04 2001-06-19 Raytheon Company Wide field of view infrared zoom lens assembly having a constant F/number
US5763911A (en) * 1996-06-05 1998-06-09 Pacesetter, Inc. Micro-cellular capacitor for use in implantable medical devices
US6054328A (en) * 1996-12-06 2000-04-25 International Business Machines Corporation Method for cleaning the surface of a dielectric
US6136210A (en) * 1998-11-02 2000-10-24 Xerox Corporation Photoetching of acoustic lenses for acoustic ink printing
US6358430B1 (en) * 1999-07-28 2002-03-19 Motorola, Inc. Technique for etching oxides and/or insulators
EP1321448A1 (en) * 2001-12-21 2003-06-25 "VLAAMSE INSTELLING VOOR TECHNOLOGISCH ONDERZOEK", afgekort "V.I.T.O." Method for reversibly changing the hydrophilic properties of a ceramic oxide or an oxidic ceramic
JP5750951B2 (ja) * 2011-03-14 2015-07-22 富士通株式会社 エッチングする方法及びエッチング装置
CN104759753B (zh) * 2015-03-30 2016-08-31 江苏大学 多系统自动化协调工作提高激光诱导空化强化的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661201A (en) * 1985-09-09 1987-04-28 Cts Corporation Preferential etching of a piezoelectric material

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414066A (en) * 1982-09-10 1983-11-08 Bell Telephone Laboratories, Incorporated Electrochemical photoetching of compound semiconductors
US4391683A (en) * 1982-09-10 1983-07-05 Bell Telephone Laboratories, Incorporated Mask structures for photoetching procedures
US4415414A (en) * 1982-09-10 1983-11-15 Bell Telephone Laboratories, Incorporated Etching of optical surfaces
US5157000A (en) * 1989-07-10 1992-10-20 Texas Instruments Incorporated Method for dry etching openings in integrated circuit layers
US5057184A (en) * 1990-04-06 1991-10-15 International Business Machines Corporation Laser etching of materials in liquids
US5165283A (en) * 1991-05-02 1992-11-24 Kulite Semiconductor Products, Inc. High temperature transducers and methods of fabricating the same employing silicon carbide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661201A (en) * 1985-09-09 1987-04-28 Cts Corporation Preferential etching of a piezoelectric material

Also Published As

Publication number Publication date
US5238530A (en) 1993-08-24
TW243465B (US06235095-20010522-C00021.png) 1995-03-21

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