KR100294566B1 - 텅스텐또는텅스텐화합물필름을패턴화된웨이퍼기판위에화학증착시키는방법 - Google Patents

텅스텐또는텅스텐화합물필름을패턴화된웨이퍼기판위에화학증착시키는방법 Download PDF

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Publication number
KR100294566B1
KR100294566B1 KR1019940704611A KR19940704611A KR100294566B1 KR 100294566 B1 KR100294566 B1 KR 100294566B1 KR 1019940704611 A KR1019940704611 A KR 1019940704611A KR 19940704611 A KR19940704611 A KR 19940704611A KR 100294566 B1 KR100294566 B1 KR 100294566B1
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South Korea
Prior art keywords
patterned wafer
wafer substrate
wafer
tungsten
cvd
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KR1019940704611A
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English (en)
Korean (ko)
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로버트에프.포스터
헬렌엘리스레벤느
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히가시 데츠로
도쿄 엘렉트론 가부시키가이샤
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019940704611A 1992-06-15 1993-06-09 텅스텐또는텅스텐화합물필름을패턴화된웨이퍼기판위에화학증착시키는방법 Expired - Fee Related KR100294566B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/898492 1992-06-15
US07/898,492 US5434110A (en) 1992-06-15 1992-06-15 Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates
PCT/US1993/005517 WO1993025722A1 (en) 1992-06-15 1993-06-09 Methods of chemical vapor deposition (cvd) of films on patterned wafer substrates

Publications (1)

Publication Number Publication Date
KR100294566B1 true KR100294566B1 (ko) 2001-09-17

Family

ID=25409541

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940704611A Expired - Fee Related KR100294566B1 (ko) 1992-06-15 1993-06-09 텅스텐또는텅스텐화합물필름을패턴화된웨이퍼기판위에화학증착시키는방법

Country Status (9)

Country Link
US (1) US5434110A (https=)
EP (1) EP0644952B1 (https=)
JP (1) JP3282813B2 (https=)
KR (1) KR100294566B1 (https=)
AU (1) AU4531693A (https=)
CA (1) CA2137567A1 (https=)
DE (1) DE69301031T2 (https=)
TW (1) TW253064B (https=)
WO (1) WO1993025722A1 (https=)

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JPH0758036A (ja) * 1993-08-16 1995-03-03 Ebara Corp 薄膜形成装置
WO1995034092A1 (en) 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5975912A (en) 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5610106A (en) * 1995-03-10 1997-03-11 Sony Corporation Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
US5567483A (en) * 1995-06-05 1996-10-22 Sony Corporation Process for plasma enhanced anneal of titanium nitride
US5811762A (en) * 1996-09-25 1998-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Heater assembly with dual temperature control for use in PVD/CVD system
US5963836A (en) * 1996-12-03 1999-10-05 Genus, Inc. Methods for minimizing as-deposited stress in tungsten silicide films
US6335280B1 (en) * 1997-01-13 2002-01-01 Asm America, Inc. Tungsten silicide deposition process
US5989652A (en) * 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
US5834371A (en) * 1997-01-31 1998-11-10 Tokyo Electron Limited Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
US6271121B1 (en) 1997-02-10 2001-08-07 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US5906866A (en) * 1997-02-10 1999-05-25 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US5926737A (en) * 1997-08-19 1999-07-20 Tokyo Electron Limited Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US5976990A (en) * 1998-01-09 1999-11-02 Micron Technology, Inc. Method for optimization of thin film deposition
US6289842B1 (en) 1998-06-22 2001-09-18 Structured Materials Industries Inc. Plasma enhanced chemical vapor deposition system
US6302057B1 (en) 1998-09-15 2001-10-16 Tokyo Electron Limited Apparatus and method for electrically isolating an electrode in a PECVD process chamber
US6245668B1 (en) * 1998-09-18 2001-06-12 International Business Machines Corporation Sputtered tungsten diffusion barrier for improved interconnect robustness
JP3069336B2 (ja) * 1998-12-04 2000-07-24 キヤノン販売株式会社 成膜装置
US6173673B1 (en) 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
JP2001060564A (ja) * 1999-08-23 2001-03-06 Nec Corp 半導体装置の製造方法
CN100358098C (zh) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
US8859417B2 (en) 2013-01-03 2014-10-14 Globalfoundries Inc. Gate electrode(s) and contact structure(s), and methods of fabrication thereof

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JPH0394061A (ja) * 1989-09-07 1991-04-18 Nisshin Steel Co Ltd タングステンルツボの製造方法

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Also Published As

Publication number Publication date
DE69301031T2 (de) 1996-09-05
DE69301031D1 (de) 1996-01-25
CA2137567A1 (en) 1993-12-23
EP0644952B1 (en) 1995-12-13
AU4531693A (en) 1994-01-04
EP0644952A1 (en) 1995-03-29
JPH07507842A (ja) 1995-08-31
US5434110A (en) 1995-07-18
WO1993025722A1 (en) 1993-12-23
TW253064B (https=) 1995-08-01
JP3282813B2 (ja) 2002-05-20

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